ITTO20030228A1 - Giunzione per celle fotovoltaiche, sensori ottici, o simili. - Google Patents
Giunzione per celle fotovoltaiche, sensori ottici, o simili.Info
- Publication number
- ITTO20030228A1 ITTO20030228A1 IT000228A ITTO20030228A ITTO20030228A1 IT TO20030228 A1 ITTO20030228 A1 IT TO20030228A1 IT 000228 A IT000228 A IT 000228A IT TO20030228 A ITTO20030228 A IT TO20030228A IT TO20030228 A1 ITTO20030228 A1 IT TO20030228A1
- Authority
- IT
- Italy
- Prior art keywords
- junction
- similar
- optical sensors
- photovoltaic cells
- photovoltaic
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/18—Photovoltaic cells having only Schottky potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1228—Active materials comprising only Group IV materials porous silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000228A ITTO20030228A1 (it) | 2003-03-27 | 2003-03-27 | Giunzione per celle fotovoltaiche, sensori ottici, o simili. |
| PCT/IB2003/006283 WO2004086517A2 (en) | 2003-03-27 | 2003-12-23 | Junction for photovoltaic cells, optical sensors or the like |
| AU2003289666A AU2003289666A1 (en) | 2003-03-27 | 2003-12-23 | Junction for photovoltaic cells, optical sensors or the like |
| US10/551,045 US20060096634A1 (en) | 2003-03-27 | 2003-12-23 | Junction for photovoltaic cells, optical sensors or the like |
| EP03780505A EP1627435A2 (en) | 2003-03-27 | 2003-12-23 | Junction for photovoltaic cells, optical sensors or the like |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000228A ITTO20030228A1 (it) | 2003-03-27 | 2003-03-27 | Giunzione per celle fotovoltaiche, sensori ottici, o simili. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ITTO20030228A1 true ITTO20030228A1 (it) | 2004-09-28 |
Family
ID=33042721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT000228A ITTO20030228A1 (it) | 2003-03-27 | 2003-03-27 | Giunzione per celle fotovoltaiche, sensori ottici, o simili. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20060096634A1 (it) |
| EP (1) | EP1627435A2 (it) |
| AU (1) | AU2003289666A1 (it) |
| IT (1) | ITTO20030228A1 (it) |
| WO (1) | WO2004086517A2 (it) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4142195A (en) * | 1976-03-22 | 1979-02-27 | Rca Corporation | Schottky barrier semiconductor device and method of making same |
| US4990988A (en) * | 1989-06-09 | 1991-02-05 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Laterally stacked Schottky diodes for infrared sensor applications |
-
2003
- 2003-03-27 IT IT000228A patent/ITTO20030228A1/it unknown
- 2003-12-23 US US10/551,045 patent/US20060096634A1/en not_active Abandoned
- 2003-12-23 EP EP03780505A patent/EP1627435A2/en not_active Withdrawn
- 2003-12-23 AU AU2003289666A patent/AU2003289666A1/en not_active Abandoned
- 2003-12-23 WO PCT/IB2003/006283 patent/WO2004086517A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004086517A2 (en) | 2004-10-07 |
| AU2003289666A1 (en) | 2004-10-18 |
| US20060096634A1 (en) | 2006-05-11 |
| EP1627435A2 (en) | 2006-02-22 |
| WO2004086517A3 (en) | 2005-04-14 |
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