ITTO20030425A1 - Dispositivo interruttore elettrico a comando ottico basato su nanotubi di carbonio e sistema interruttore elettrico utilizzante tale dispositivo interruttore. - Google Patents

Dispositivo interruttore elettrico a comando ottico basato su nanotubi di carbonio e sistema interruttore elettrico utilizzante tale dispositivo interruttore.

Info

Publication number
ITTO20030425A1
ITTO20030425A1 IT000425A ITTO20030425A ITTO20030425A1 IT TO20030425 A1 ITTO20030425 A1 IT TO20030425A1 IT 000425 A IT000425 A IT 000425A IT TO20030425 A ITTO20030425 A IT TO20030425A IT TO20030425 A1 ITTO20030425 A1 IT TO20030425A1
Authority
IT
Italy
Prior art keywords
switch device
electric switch
optically
carbon nanotubes
device based
Prior art date
Application number
IT000425A
Other languages
English (en)
Inventor
Maria Fortuna Bevilacqua
Salvatore Castorina
Salvatore Coffa
Maria Grazia Maglione
Luigi Occhipinti
Ambrosio Michele Portico
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT000425A priority Critical patent/ITTO20030425A1/it
Priority to US10/863,635 priority patent/US7582892B2/en
Publication of ITTO20030425A1 publication Critical patent/ITTO20030425A1/it
Priority to US12/551,468 priority patent/US7944011B2/en
Priority to US13/082,805 priority patent/US8143086B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Carbon And Carbon Compounds (AREA)
IT000425A 2003-06-06 2003-06-06 Dispositivo interruttore elettrico a comando ottico basato su nanotubi di carbonio e sistema interruttore elettrico utilizzante tale dispositivo interruttore. ITTO20030425A1 (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT000425A ITTO20030425A1 (it) 2003-06-06 2003-06-06 Dispositivo interruttore elettrico a comando ottico basato su nanotubi di carbonio e sistema interruttore elettrico utilizzante tale dispositivo interruttore.
US10/863,635 US7582892B2 (en) 2003-06-06 2004-06-07 Optically controlled switching methods based upon the polarization of electromagnetic radiation incident upon carbon nanotubes and electrical-switch systems using such switch devices
US12/551,468 US7944011B2 (en) 2003-06-06 2009-08-31 Optically controlled electrical-switch device based upon carbon nanotubes and electrical-switch system using the switch device
US13/082,805 US8143086B2 (en) 2003-06-06 2011-04-08 Optically controlled electrical-switch device based upon carbon nanotubes and electrical-switch system using the switch device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000425A ITTO20030425A1 (it) 2003-06-06 2003-06-06 Dispositivo interruttore elettrico a comando ottico basato su nanotubi di carbonio e sistema interruttore elettrico utilizzante tale dispositivo interruttore.

Publications (1)

Publication Number Publication Date
ITTO20030425A1 true ITTO20030425A1 (it) 2004-12-07

Family

ID=36683591

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000425A ITTO20030425A1 (it) 2003-06-06 2003-06-06 Dispositivo interruttore elettrico a comando ottico basato su nanotubi di carbonio e sistema interruttore elettrico utilizzante tale dispositivo interruttore.

Country Status (2)

Country Link
US (3) US7582892B2 (it)
IT (1) ITTO20030425A1 (it)

Families Citing this family (34)

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JP5025132B2 (ja) * 2002-10-29 2012-09-12 プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ カーボンナノチューブ素子の製造
US7253434B2 (en) * 2002-10-29 2007-08-07 President And Fellows Of Harvard College Suspended carbon nanotube field effect transistor
ITTO20030425A1 (it) * 2003-06-06 2004-12-07 St Microelectronics Srl Dispositivo interruttore elettrico a comando ottico basato su nanotubi di carbonio e sistema interruttore elettrico utilizzante tale dispositivo interruttore.
US7358291B2 (en) * 2004-06-24 2008-04-15 Arrowhead Center, Inc. Nanocomposite for enhanced rectification
DE102004049453A1 (de) * 2004-10-11 2006-04-20 Infineon Technologies Ag Elektrischer Schaltkreis mit einer Nanostruktur und Verfahren zum Herstellen einer Kontaktierung einer Nanostruktur
ATE529734T1 (de) * 2005-04-06 2011-11-15 Harvard College Molekulare charakterisierung mit kohlenstoff- nanoröhrchen-steuerung
US7634162B2 (en) 2005-08-24 2009-12-15 The Trustees Of Boston College Apparatus and methods for nanolithography using nanoscale optics
US7754964B2 (en) 2005-08-24 2010-07-13 The Trustees Of Boston College Apparatus and methods for solar energy conversion using nanocoax structures
US7649665B2 (en) 2005-08-24 2010-01-19 The Trustees Of Boston College Apparatus and methods for optical switching using nanoscale optics
US7589880B2 (en) 2005-08-24 2009-09-15 The Trustees Of Boston College Apparatus and methods for manipulating light using nanoscale cometal structures
US7943847B2 (en) 2005-08-24 2011-05-17 The Trustees Of Boston College Apparatus and methods for solar energy conversion using nanoscale cometal structures
AU2008307486B2 (en) * 2007-10-02 2014-08-14 President And Fellows Of Harvard College Carbon nanotube synthesis for nanopore devices
US8395901B2 (en) * 2007-11-13 2013-03-12 William Marsh Rice University Vertically-stacked electronic devices having conductive carbon films
WO2009137222A2 (en) * 2008-04-11 2009-11-12 Sandisk 3D, Llc Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same
US8467224B2 (en) * 2008-04-11 2013-06-18 Sandisk 3D Llc Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
TW201021161A (en) * 2008-07-18 2010-06-01 Sandisk 3D Llc Carbon-based resistivity-switching materials and methods of forming the same
TWI381990B (zh) * 2009-05-15 2013-01-11 鴻海精密工業股份有限公司 一種奈米碳管膜前驅、奈米碳管膜及其製造方法以及具有該奈米碳管膜之發光器件
US20110136304A1 (en) * 2009-06-11 2011-06-09 Etamota Corporation Techniques to Enhance Selectivity of Electrical Breakdown of Carbon Nanotubes
US8217331B2 (en) * 2010-01-19 2012-07-10 The Boeing Company Electromagnetic interference-resistant control device
KR101688523B1 (ko) * 2010-02-24 2016-12-21 삼성전자주식회사 적층형 이미지 센서
FR2961320B1 (fr) * 2010-06-15 2013-04-26 Univ Paris Sud Composant electro-optique a nanotubes, circuit integre hybride optronique ou a lien optique integrant ce composant, et procede de fabrication.
KR101223475B1 (ko) * 2010-07-30 2013-01-17 포항공과대학교 산학협력단 탄소 나노 튜브 필름의 제조 방법 및 탄소 나노 튜브 필름 기반 센서
US8598593B2 (en) 2011-07-15 2013-12-03 Infineon Technologies Ag Chip comprising an integrated circuit, fabrication method and method for locally rendering a carbonic layer conductive
FR2980918B1 (fr) * 2011-10-04 2014-03-07 Univ Granada Point memoire ram a un transistor
US10224413B1 (en) * 2012-01-30 2019-03-05 Northrop Grumman Systems Corporation Radio-frequency carbon-nanotube field effect transistor devices with local backgates and methods for making same
US11605794B2 (en) * 2014-10-17 2023-03-14 Mark A. Novotny Materials and devices that provide total transmission of electrons without ballistic propagation and methods of devising same
US20170331037A1 (en) * 2014-10-17 2017-11-16 Mark A. Novotny Materials and Devices that Provide Total Transmission of Electrons without Ballistic Propagation and Methods of Devising Same
JP7090400B2 (ja) * 2017-03-08 2022-06-24 浜松ホトニクス株式会社 半導体光検出素子
CN108963078B (zh) 2017-05-17 2020-03-17 清华大学 光电转换装置
CN108963079B (zh) * 2017-05-17 2020-03-17 清华大学 光电探测元件以及光电探测器
CN108946658B (zh) 2017-05-17 2020-03-17 清华大学 碳纳米管结构
CN108946700B (zh) 2017-05-17 2020-03-17 清华大学 碳纳米管的制备方法
CN108963077B (zh) 2017-05-17 2020-03-17 清华大学 薄膜晶体管
US11251374B2 (en) * 2019-10-10 2022-02-15 Government Of The United States Of America, As Represented By The Secretary Of Commerce Nanotube spectrometer array and making a nanotube spectrometer array

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7531136B2 (en) * 2001-11-26 2009-05-12 Sony Deutschland Gmbh Chemical sensor
US7385262B2 (en) * 2001-11-27 2008-06-10 The Board Of Trustees Of The Leland Stanford Junior University Band-structure modulation of nano-structures in an electric field
ITTO20030425A1 (it) 2003-06-06 2004-12-07 St Microelectronics Srl Dispositivo interruttore elettrico a comando ottico basato su nanotubi di carbonio e sistema interruttore elettrico utilizzante tale dispositivo interruttore.
WO2006096123A1 (en) * 2005-03-08 2006-09-14 Optovent Ab Micro and nano structures in an elastomeric material
US7875522B2 (en) * 2007-03-30 2011-01-25 The Board Of Trustees Of The Leland Stanford Junior University Silicon compatible integrated light communicator

Also Published As

Publication number Publication date
US20060158760A1 (en) 2006-07-20
US20110212566A1 (en) 2011-09-01
US7944011B2 (en) 2011-05-17
US8143086B2 (en) 2012-03-27
US7582892B2 (en) 2009-09-01
US20090321619A1 (en) 2009-12-31

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