ITTO20050139A1 - Metodo di fabbricazione di diamante colorato mediante impiantazione ionica e trattamento termico - Google Patents

Metodo di fabbricazione di diamante colorato mediante impiantazione ionica e trattamento termico

Info

Publication number
ITTO20050139A1
ITTO20050139A1 IT000139A ITTO20050139A ITTO20050139A1 IT TO20050139 A1 ITTO20050139 A1 IT TO20050139A1 IT 000139 A IT000139 A IT 000139A IT TO20050139 A ITTO20050139 A IT TO20050139A IT TO20050139 A1 ITTO20050139 A1 IT TO20050139A1
Authority
IT
Italy
Prior art keywords
manufacture
thermal treatment
colored diamond
ionic systems
ionic
Prior art date
Application number
IT000139A
Other languages
English (en)
Inventor
Byungho Choi
Jaehyung Lee
Jaewon Park
Changwon Sohn
Original Assignee
Korea Atomic Energy Res Instit
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Atomic Energy Res Instit filed Critical Korea Atomic Energy Res Instit
Publication of ITTO20050139A1 publication Critical patent/ITTO20050139A1/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/28—After-treatment, e.g. purification, irradiation, separation or recovery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0015—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterized by the colour of the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Adornments (AREA)
IT000139A 2004-03-04 2005-03-04 Metodo di fabbricazione di diamante colorato mediante impiantazione ionica e trattamento termico ITTO20050139A1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040014557A KR100644929B1 (ko) 2004-03-04 2004-03-04 이온주입과 열처리에 의한 발색된 다이아몬드의 제조방법

Publications (1)

Publication Number Publication Date
ITTO20050139A1 true ITTO20050139A1 (it) 2005-09-05

Family

ID=34910015

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000139A ITTO20050139A1 (it) 2004-03-04 2005-03-04 Metodo di fabbricazione di diamante colorato mediante impiantazione ionica e trattamento termico

Country Status (5)

Country Link
US (1) US7604846B2 (it)
JP (1) JP4413157B2 (it)
KR (1) KR100644929B1 (it)
CN (1) CN100424225C (it)
IT (1) ITTO20050139A1 (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5177472B2 (ja) * 2006-10-05 2013-04-03 地方独立行政法人 東京都立産業技術研究センター カット面を着色したダイヤモンド粒子の製造方法、およびカット面に文様を描画したダイヤモンド粒子の製造方法
US8778463B2 (en) * 2008-06-12 2014-07-15 Jae-Won Park Method for manufacturing the color controlled sapphire
RU2434977C1 (ru) * 2010-04-16 2011-11-27 Государственное образовательное учреждение высшего профессионального образования "Казанский государственный университет им. В.И. Ульянова-Ленина" (ГОУ ВПО КГУ) Способ получения алмазов фантазийного желтого и черного цвета
CN102021525B (zh) * 2010-12-02 2013-01-16 武汉科技大学 一种基于离子注入的彩色不锈钢及其制备方法
US8961920B1 (en) 2011-04-26 2015-02-24 Us Synthetic Corporation Methods of altering the color of a diamond by irradiation and high-pressure/high-temperature processing
CN102208321B (zh) * 2011-05-11 2013-06-19 江苏大学 一种激光诱导等离子体注入基材的方法及装置
CN107840331B (zh) * 2017-11-02 2021-04-06 长沙新材料产业研究院有限公司 一种金刚石改性的方法及改性金刚石
DE112020003569A5 (de) 2019-07-25 2022-04-28 Quantum Technologies UG (haftungsbeschränkt) NV-Zentrum basierender mikrowellenfreier Quantensensor und dessen Anwendungen und Ausprägungen
WO2021030557A1 (en) * 2019-08-13 2021-02-18 Pt Creations Synthetic diamond jewelry and fabrication method thereof
CN110625123B (zh) * 2019-08-26 2021-09-03 中南钻石有限公司 一种高性能聚晶金刚石复合片及其制备方法
WO2023245112A1 (en) * 2022-06-15 2023-12-21 Schlumberger Technology Corporation Heat treatment of nanodiamond particles with controlled powder layer depth
CN116199217B (zh) * 2023-01-10 2025-06-10 武汉大学 金刚石铍-空位量子色心、应用及制备方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1287A (en) * 1839-08-14 galpin
JPS5576060A (en) * 1978-12-04 1980-06-07 Agency Of Ind Science & Technol Metal surface coloring method
JPS56127775A (en) * 1980-03-06 1981-10-06 Agency Of Ind Science & Technol Protection of metallic copper from corrosion
JPS62214173A (ja) * 1986-03-17 1987-09-19 Toyota Central Res & Dev Lab Inc 透光性基板の着色方法
US5075764A (en) * 1989-06-22 1991-12-24 Semiconductor Energy Laboratory Co., Ltd. Diamond electric device and manufacturing method for the same
JPH03115582A (ja) * 1989-09-29 1991-05-16 Tanaka Kikinzoku Kogyo Kk ダイヤモンド上への貴金属コーティング方法
JP2836790B2 (ja) * 1991-01-08 1998-12-14 株式会社神戸製鋼所 ダイヤモンド薄膜へのオーミック電極形成方法
ZA933939B (en) * 1992-06-05 1993-12-30 De Beers Ind Diamond Diamond doping
USH1287H (en) * 1992-06-16 1994-02-01 The United States Of America As Represented By The Secretary Of The Navy Ion implanted diamond metal-insulator-semiconductor field effect transistor
JP3339137B2 (ja) * 1993-10-27 2002-10-28 住友電気工業株式会社 合成ダイヤモンド単結晶およびその製造方法
US5702586A (en) * 1994-06-28 1997-12-30 The United States Of America As Represented By The Secretary Of The Navy Polishing diamond surface
JP3584450B2 (ja) * 1995-03-17 2004-11-04 住友電気工業株式会社 レーザー発振素子及びレーザー発振装置
JPH09106958A (ja) * 1995-06-23 1997-04-22 De Beers Ind Diamond Div Ltd 結晶基体のドーピング
JP2001035804A (ja) * 1999-07-21 2001-02-09 Agency Of Ind Science & Technol ダイヤモンド半導体およびその作製方法
JP3138705B1 (ja) * 1999-08-31 2001-02-26 工業技術院長 ダイヤモンドｐｎ接合ダイオードおよびその作製方法
ATE342767T1 (de) * 2000-08-11 2006-11-15 Bellataire Internat Llc Hochdruck und hochtemperaturherstellung von diamanten
CN1340331A (zh) * 2000-08-30 2002-03-20 顾汉卿 钛表面修饰人工晶体的方法及其产品
US7402835B2 (en) * 2002-07-18 2008-07-22 Chevron U.S.A. Inc. Heteroatom-containing diamondoid transistors
KR20040012090A (ko) * 2002-07-31 2004-02-11 송오성 다이아몬드의 발색방법
KR20040023447A (ko) * 2002-09-11 2004-03-18 송오성 이온주입과 열처리 공정을 이용한 보석발색방법
US8168413B2 (en) * 2006-11-22 2012-05-01 Academia Sinica Luminescent diamond particles

Also Published As

Publication number Publication date
US7604846B2 (en) 2009-10-20
CN1664162A (zh) 2005-09-07
CN100424225C (zh) 2008-10-08
KR100644929B1 (ko) 2006-11-13
US20050196547A1 (en) 2005-09-08
JP2005247686A (ja) 2005-09-15
JP4413157B2 (ja) 2010-02-10
KR20050089239A (ko) 2005-09-08

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