ITUA20164571A1 - Dispositivo optoelettronico multibanda per applicazioni colorimetriche e relativo metodo di fabbricazione - Google Patents

Dispositivo optoelettronico multibanda per applicazioni colorimetriche e relativo metodo di fabbricazione

Info

Publication number
ITUA20164571A1
ITUA20164571A1 ITUA2016A004571A ITUA20164571A ITUA20164571A1 IT UA20164571 A1 ITUA20164571 A1 IT UA20164571A1 IT UA2016A004571 A ITUA2016A004571 A IT UA2016A004571A IT UA20164571 A ITUA20164571 A IT UA20164571A IT UA20164571 A1 ITUA20164571 A1 IT UA20164571A1
Authority
IT
Italy
Prior art keywords
manufacturing
optoelectronic device
colorimetric
applications
band optoelectronic
Prior art date
Application number
ITUA2016A004571A
Other languages
English (en)
Inventor
Massimo Cataldo Mazzillo
Martino Valeria Cinnera
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITUA2016A004571A priority Critical patent/ITUA20164571A1/it
Priority to US15/346,578 priority patent/US9978802B2/en
Publication of ITUA20164571A1 publication Critical patent/ITUA20164571A1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/251—Colorimeters; Construction thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/959—Circuit arrangements for devices having potential barriers for devices working in avalanche mode

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Light Receiving Elements (AREA)
ITUA2016A004571A 2016-06-21 2016-06-21 Dispositivo optoelettronico multibanda per applicazioni colorimetriche e relativo metodo di fabbricazione ITUA20164571A1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ITUA2016A004571A ITUA20164571A1 (it) 2016-06-21 2016-06-21 Dispositivo optoelettronico multibanda per applicazioni colorimetriche e relativo metodo di fabbricazione
US15/346,578 US9978802B2 (en) 2016-06-21 2016-11-08 Multiband optoelectronic device for colorimetric applications and related manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITUA2016A004571A ITUA20164571A1 (it) 2016-06-21 2016-06-21 Dispositivo optoelettronico multibanda per applicazioni colorimetriche e relativo metodo di fabbricazione

Publications (1)

Publication Number Publication Date
ITUA20164571A1 true ITUA20164571A1 (it) 2017-12-21

Family

ID=57133344

Family Applications (1)

Application Number Title Priority Date Filing Date
ITUA2016A004571A ITUA20164571A1 (it) 2016-06-21 2016-06-21 Dispositivo optoelettronico multibanda per applicazioni colorimetriche e relativo metodo di fabbricazione

Country Status (2)

Country Link
US (1) US9978802B2 (it)
IT (1) ITUA20164571A1 (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11837669B2 (en) 2013-03-15 2023-12-05 ActLight SA Photo detector systems and methods of operating same
US10964837B2 (en) 2013-03-15 2021-03-30 ActLight SA Photo detector systems and methods of operating same
US11114480B2 (en) 2013-03-15 2021-09-07 ActLight SA Photodetector
IT201800004149A1 (it) * 2018-03-30 2019-09-30 St Microelectronics Srl Fotorivelatore di luce ultravioletta di carburo di silicio e suo processo di fabbricazione
US11018168B2 (en) 2018-09-20 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with improved timing resolution and photon detection probability
US11251217B2 (en) 2019-04-17 2022-02-15 ActLight SA Photodetector sensor arrays
EP3748698A1 (en) * 2019-06-03 2020-12-09 Ams Ag Semiconductor body, avalanche photodiode and method for fabricating a semiconductor body
US11322639B2 (en) * 2020-04-09 2022-05-03 Globalfoundries U.S. Inc. Avalanche photodiode
US11611002B2 (en) 2020-07-22 2023-03-21 Globalfoundries U.S. Inc. Photodiode and/or pin diode structures
FR3114440B1 (fr) * 2020-09-21 2022-08-19 Commissariat Energie Atomique Photodiode passivée comportant une portion périphérique ferroélectrique
US11424377B2 (en) 2020-10-08 2022-08-23 Globalfoundries U.S. Inc. Photodiode with integrated, light focusing element
DE102021200828A1 (de) 2021-01-29 2022-08-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Fotodiode mit orthogonalem Schichtaufbau
US12474453B2 (en) 2022-01-20 2025-11-18 ActLight SA Control techniques for photodetector systems
US11949034B2 (en) 2022-06-24 2024-04-02 Globalfoundries U.S. Inc. Photodetector with dual doped semiconductor material
US12598374B2 (en) 2023-09-27 2026-04-07 ActLight SA Techniques for minimizing power consumption in photodetector measurements

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100148040A1 (en) * 2008-12-17 2010-06-17 Stmicroelectronics S.R.L. Geiger-mode photodiode with integrated and adjustable quenching resistor, photodiode array, and manufacturing method thereof
US20100271108A1 (en) * 2009-04-23 2010-10-28 Stmicroelectronics S.R.L. Geiger-mode photodiode with integrated and jfet-effect-adjustable quenching resistor, photodiode array, and corresponding manufacturing method
US20110241149A1 (en) * 2010-03-30 2011-10-06 Stmicroelectronics S.R.L. Geiger-mode avalanche photodiode with high signal-to-noise ratio, and corresponding manufacturing process

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITTO20110689A1 (it) * 2011-07-28 2013-01-29 St Microelectronics Srl Spettrometro includente un fotodiodo a valanga operante in modalita' geiger

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100148040A1 (en) * 2008-12-17 2010-06-17 Stmicroelectronics S.R.L. Geiger-mode photodiode with integrated and adjustable quenching resistor, photodiode array, and manufacturing method thereof
US20100271108A1 (en) * 2009-04-23 2010-10-28 Stmicroelectronics S.R.L. Geiger-mode photodiode with integrated and jfet-effect-adjustable quenching resistor, photodiode array, and corresponding manufacturing method
US20110241149A1 (en) * 2010-03-30 2011-10-06 Stmicroelectronics S.R.L. Geiger-mode avalanche photodiode with high signal-to-noise ratio, and corresponding manufacturing process

Also Published As

Publication number Publication date
US9978802B2 (en) 2018-05-22
US20170365636A1 (en) 2017-12-21

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