JP2000077351A - Method of manufacturing multilayer resist structure substrate and T-type dummy gate structure substrate - Google Patents

Abstract

(57) Abstract: A multi-layer resist structure substrate in which the thickness of a coating oxide film layer is uniform, the removal of the resist layer is easy, and the mechanical strength of the substrate does not decrease. Provided is a method of manufacturing a T-type dummy gate structure substrate. After forming the A first resist layer 12 on the substrate 10, implanting phosphorous ions P ⁺ in the first resist layer 12. Next, a coating oxide film layer is formed on the first resist layer 12, and a second resist layer is formed on the coating oxide film to form a multilayer resist structure. Thereafter, a T-type dummy gate structure is further formed by etching or the like.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer resist structure substrate having a multilayer resist structure provided on a substrate and a method of manufacturing a T-type dummy gate structure substrate having a T-type dummy gate structure provided on the substrate.

[0002]

2. Description of the Related Art Conventionally, in a manufacturing process of a semiconductor device requiring fine processing such as a manufacturing of a self-aligned FET, a multilayer resist structure is provided on a substrate and a pattern is formed by etching. I have. In particular,
In a manufacturing process in which a T-type dummy gate structure is formed on a substrate and an n ⁺ layer is injected into the substrate by self-alignment by an ion implantation method, it is necessary to accurately form, for example, an SiO ₂ layer for a mask on the substrate. For this reason, it is essential to use a substrate provided with a multilayer resist structure.

For example, in the case of the self-alignment described above,
Usually, the following manufacturing method is used.

[0004] First, as shown in FIG.
A resist is applied to a substrate 1 made of such a material as described above to form a resist layer 2.

[0005] Next, as shown in FIG. 13, for example, a coating oxide film (Spin on Gl) is formed on the resist layer 2.
ass) A material is applied to form an applied oxide film layer 3.
At this time, it is difficult to form the coating oxide film layer 3 having a uniform thickness when the coating oxide film material and the organic substance in the resist that are mutually reactive are mixed with each other. , The resist layer 2
In the step of forming the resist, the resist layer 2 is heat-treated at a high temperature of 200 ° C. or more, for about 1 minute, for example.

Further, as shown in FIG. 14, a resist is applied to the coating oxide film layer 3 to form a resist layer 4. Thus, a multilayer resist structure substrate is completed.

In the case of manufacturing a T-type dummy gate structure substrate using this multilayer resist structure substrate, the method shown in FIG.
As shown in FIG. 6, the mask 5 is overlaid and exposed and developed to form a residual resist layer 4a.

Next, dry etching is performed using the remaining resist layer 4a as a mask to form a remaining coated oxide film layer 3a as shown in FIG.

Next, in the state of FIG.
By performing dry etching using the residual image resist layer 4a as a mask, as shown in FIG. 17, the residual resist layer 4a is removed, and a portion of the resist layer 2 where the residual applied oxide film layer 3a does not exist is removed. Thus, a remaining resist layer 2a is formed.

Next, the remaining resist layer 2a is dry-side etched using the remaining coating oxide film layer 3a as a mask to form a thinner remaining resist layer 2a under the remaining coating oxide film layer 3a. As shown in FIG. 18, the substrate 1 provided with the T-type dummy gate 7 having a multilayer resist structure is completed.

In the manufacturing process of implanting an n ⁺ layer into a substrate by self-alignment by ion implantation using the substrate 1 manufactured as described above, first, as shown in FIG.
Ions are implanted into the substrate 1 on which the T-type dummy gate 7 is provided to form an n ⁺ layer in the substrate 1.
As shown in FIG. 1, an SiO ₂ layer 8 is formed on the surface of the substrate 1 and the T-type dummy gate 7 by, for example, a sputtering method.

Next, as shown in FIG. 21, ultrasonic cleaning is performed using a resist stripping solution or an organic solvent such as acetone to remove the unnecessary T-type dummy gate 7, and oxygen plasma processing is further performed. The remaining resist layer 2a is removed, leaving only the remaining SiO ₂ layer 8a on the substrate 1.

[0013]

However, in the conventional method described above, since the resist layer 2 is heat-treated at a high temperature, it is difficult to reliably remove the remaining resist layer 2a. Residues will remain.

In order to cope with this, a resist stripping solution having a high resist removal ability is used or ultrasonic cleaning is performed for a long time.
Due to the damage of the substrate 1 generated at the time of removing the resist, inconveniences such as a decrease in mechanical strength of the substrate 1 occur.

On the other hand, if an attempt is made to reduce the heat treatment temperature of the resist layer 2, as described above, since the reactivity between the resist and the coating oxide film is high, the coating oxide film layer 3 having a uniform thickness is formed. It is difficult to form.

The present invention has been made in view of such problems, and has a uniform thickness of a coating oxide film layer, easy removal of a resist layer, and a reduction in mechanical strength of a substrate. It is an object of the present invention to provide a method of manufacturing a multilayer resist structure substrate which does not cause the problem and a method of manufacturing a T-type dummy gate structure substrate using the multilayer resist structure substrate.

[0017]

SUMMARY OF THE INVENTION The present invention is a method of manufacturing a multi-layer resist structure substrate having a multi-layer resist structure provided on a substrate, comprising the steps of: forming a first resist layer on the substrate; Implanting ions into the resist layer, forming a coating oxide film layer on the ion-implanted first resist layer, and forming a second resist layer on the coating oxide film layer. , Is characterized by having.

In this case, since the first resist layer is modified by ion implantation, the reactivity between the resist and the coated oxide film can be reduced without heat-treating the first resist layer at a high temperature. In addition, it is possible to uniformly apply the coating oxide film on the first resist layer. Further, since the first resist layer is easily removed, the amount of the residue on the substrate can be reduced. Further, since a stripper having a high resist ability is not used or ultrasonic cleaning is not performed for a long time, the mechanical strength of the substrate does not decrease. Here, as ions to be implanted into the first resist layer, atomic ions of phosphorus, silicon, arsenic, boron, and the like, and molecular ions thereof can be used.

The present invention also relates to a method for manufacturing a T-type dummy gate structure substrate having a T-type dummy gate structure provided on a substrate, the method comprising: forming a first resist layer on the substrate; Implanting ions into the resist layer of
Forming a coating oxide film layer on the ion-implanted first resist layer, forming a second resist layer on the coating oxide film layer, and removing the second resist layer Forming a second remaining resist layer by removing the coating oxide film layer to form a remaining coating oxide film layer at a position corresponding to the second remaining resist layer; Removing the resist layer and the first resist layer to form a first remaining resist layer narrower than the remaining coated oxide film layer at a position corresponding to the remaining coated oxide film layer. It is characterized by.

Thus, it is possible to obtain a T-type dummy gate structure substrate having no problem such as a decrease in mechanical strength of the substrate, and it can be suitably used, for example, for manufacturing a self-aligned FET.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a method of manufacturing a multilayer resist structure substrate according to the present invention and a method of manufacturing a T-type dummy gate structure substrate using the multilayer resist structure substrate will be described below with reference to FIGS. This will be described with reference to FIG.

In the method for manufacturing a multilayer resist structure substrate according to the first example of the present embodiment, first, as shown in FIG.
For example, a first resist layer 12 is formed by applying a resist to a substrate 10 made of a material such as Si. here,
Pre-baking is performed at a temperature of about 100 ° C. for about 1 minute, and post-baking is performed at a temperature of about 180 ° C. for about 1 minute.

Then, as shown in FIG. 2, ions, for example, phosphorus ions P ⁺ are applied to the surface of the first resist layer 12 at an acceleration voltage of 10 kV and an area density of 2.5 × 10 ¹³ ions by an ion implantation method. / Cm ² uniformly.

Next, as shown in FIG. 3, for example, a coating oxide film material is applied to form a coating oxide film layer 14.
At this time, since the surface layer of the first resist layer 12 has been modified by the phosphorus ions P ⁺ , the coating oxide film layer 14 having a uniform thickness is formed. Here, for example, 80 ° C., 15
A post-bake treatment is sequentially performed for about 1 minute at each of 0 ° C. and 200 ° C.

Next, as shown in FIG. 4, a resist is applied to the coating oxide film layer 14 to form a second resist layer 16. Here, a pre-bake treatment is performed at a temperature of about 100 ° C. for about 1 minute. Thus, the multilayer resist structure substrate according to the first example of the present embodiment is completed.

Next, a method of manufacturing a T-type dummy gate structure substrate according to a second example of the present embodiment will be described below.

Using the above-described multilayer resist structure substrate, as shown in FIG. 5, a mask 18 is overlaid and exposed and developed to form a second residual resist layer 16a.

Next, as shown in FIG. 6, a dry etching process is performed using the second residual resist layer 16a as a mask to form a residual applied oxide film layer 14a.

Next, in the state of FIG. 6, the second remaining resist layer 16a is used as a mask to perform a dry etching process, thereby removing the second remaining resist layer 16a as shown in FIG. , Resist layer 1
In 2, portions other than the remaining resist layer 12 a existing under the remaining coating oxide film layer 14 a are removed.

Next, the remaining resist layer 12a is dry-side etched using the remaining coating oxide film layer 14a as a mask, thereby forming a thinner remaining resist layer 12a. As a result, as shown in FIG. The substrate 10 provided with the T-type dummy gate 22 is completed.

In the manufacturing process of implanting the n ⁺ layer into the substrate 10 by self-alignment by ion implantation using the substrate 10 manufactured as described above, first, the T-type dummy gate 22 shown in FIG. 8 was provided. As shown in FIG. 9, ions are implanted into the substrate 10 to form an n ⁺ region in the substrate 10, and then, as shown in FIG. 10, the substrate 10 and the T-type dummy gate 22 are formed by, for example, sputtering. A SiO ₂ layer 24 is formed on the surface of the substrate.

Then, as shown in FIG. 11, the unnecessary T-type dummy gate 22 is removed by ultrasonic cleaning using a resist stripper or an organic solvent such as acetone, and oxygen plasma processing is further performed. Then, the remaining resist layer 12a is removed to leave only the remaining SiO ₂ layer 24a on the substrate 10.

[0033]

As described above, according to the present invention,
A method of manufacturing a multilayer resist structure substrate having a multilayer resist structure provided on a substrate, comprising: forming a first resist layer on the substrate; implanting ions into the first resist layer; Forming a coating oxide film layer on the obtained first resist layer; and forming a second resist layer on the coating oxide film layer.

For this reason, the thickness of the coating oxide film layer is uniform, the first resist layer is easily removed, and furthermore, the multilayer resist structure does not cause a decrease in the mechanical strength of the substrate. The effect that a substrate can be obtained is achieved.

Further, according to the present invention, there is provided a method of manufacturing a T-type dummy gate structure substrate in which a T-type dummy gate structure is provided on a substrate, wherein a multi-layer resist structure substrate is used.
Removing the second resist layer to form a second residual resist layer, and removing the coating oxide film layer to form a residual coating oxide film layer at a position corresponding to the second residual resist layer Removing the second remaining resist layer and the first resist layer to form a first remaining resist layer narrower than the remaining coated oxide film layer at a position corresponding to the remaining coated oxide film layer. And a process.

Therefore, it is possible to obtain a T-type dummy gate structure substrate having no problem such as a decrease in mechanical strength of the substrate.

[Brief description of the drawings]

FIG. 1 is a view showing a step of forming a first resist layer on a substrate in a method for manufacturing a multilayer resist structure substrate according to a first example of the present embodiment.

FIG. 2 is a view showing a step of implanting phosphorus ions into a first resist layer, following the step of FIG. 1;

FIG. 3 is a view showing a step of forming a coating oxide film layer following the step of FIG. 2;

FIG. 4 is a view showing a step of forming a second resist layer and completing a multilayer resist structure substrate, following the step of FIG. 3;

FIG. 5 is a view showing a step of forming a second residual resist layer following the step of FIG. 4 in the method of manufacturing the T-type dummy gate structure substrate according to the second example of the present embodiment.

FIG. 6 is a view showing a step of forming a residual coating oxide film layer following the step of FIG. 5;

FIG. 7 is a view showing a step of forming a remaining resist layer following the step of FIG. 6;

FIG. 8 is a view showing a step of forming a first residual resist layer and completing a T-type dummy gate structure substrate, following the step of FIG. 7;

FIG. 9 is a view showing an ion implantation step for forming an n ⁺ layer following the step of FIG. 8;

FIG. 10 is a view showing a step of forming an SiO ₂ layer following the step of FIG. 9;

FIG. 11 is a view showing a step following the step of FIG. 10 in which a residual SiO ₂ layer is left as a mask.

FIG. 12 is a view showing a step of forming a resist layer on a substrate in a conventional method of manufacturing a substrate having a multilayer resist structure.

FIG. 13 is a view showing a step of forming a coating oxide film layer, following the step of FIG. 12;

FIG. 14 is a view illustrating a step of forming a resist layer and completing a multilayer resist structure substrate, following the step of FIG. 13;

FIG. 15 is a view showing a step of forming a residual resist layer following the step of FIG. 14 in the conventional method of manufacturing a T-type dummy gate structure substrate.

FIG. 16 is a view showing a step of forming a residual coating oxide film layer following the step of FIG. 15;

FIG. 17 is a view showing a step of forming a remaining resist layer following the step of FIG. 16;

FIG. 18 is a view showing a step of forming a first residual resist layer and completing a T-type dummy gate structure substrate, following the step of FIG. 17;

FIG. 19 is a view showing an ion implantation step for forming an n ⁺ layer following the step of FIG. 18;

FIG. 20 is a view showing a step of forming an SiO ₂ layer subsequent to the step of FIG. 19;

FIG. 21 is a view showing a step of leaving the remaining SiO ₂ layer as a mask, following the step of FIG. 20;

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 ... Substrate 12 ... 1st resist layer 12a ... 1st residual resist layer 14 ... Coating oxide film layer 14a ... Residual coating oxide film layer 16 ... 2nd resist layer 16a ... 2nd residual resist layer 18 ... Mask 24 ... SiO ₂ layer 22 ... T-type dummy gate 24a ... Remaining SiO ₂ layer

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Kenichiro Urayama 5-1-1 Shimorenjaku, Mitaka City, Tokyo Japan Radio Co., Ltd. (72) Inventor Tomokazu Uemura 5-1-1 Shimorenjaku, Mitaka City, Tokyo Japan Radio F term (reference) in the company 5F040 DC01 FA01 FB05 FC11 FC23 5F102 FA00 GB01 GC01 GJ03 GV07 HA05 HC07 HC11 HC15 HC17 HC21

Claims (2)

[Claims] 1. A method for manufacturing a multi-layer resist structure substrate having a multi-layer resist structure provided on a substrate, comprising: forming a first resist layer on the substrate; and implanting ions into the first resist layer. And a step of forming a coating oxide film layer on the first resist layer into which ions are implanted; and a step of forming a second resist layer on the coating oxide film layer. A method for manufacturing a multilayer resist structure substrate. 2. The method according to claim 1, wherein a T-type dummy gate structure is provided on the substrate.
Forming a first resist layer on the substrate, implanting ions into the first resist layer, and implanting ions into the first resist. Forming a coating oxide film layer on the layer; forming a second resist layer on the coating oxide film layer; removing the second resist layer to form a second residual resist layer Removing the applied oxide film layer to form a residual applied oxide film layer at a position corresponding to the second residual resist layer; and removing the second residual resist layer and the first resist layer. Removing and forming a first remaining resist layer narrower in width than the remaining coated oxide film layer at a position corresponding to the remaining coated oxide film layer. Manufacturing method.