JP2000200791A5 - - Google Patents

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Publication number: JP2000200791A5
Authority: JP; Japan
Prior art keywords: voltage; type; region; semiconductor device; driven
Prior art date: 1999-01-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP1999000760A

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Filing date

1999-01-05

Publication date

2005-08-25

1999-01-05 Application filed filed Critical

1999-01-05 Priority to JP00076099A priority Critical patent/JP4700148B2/ja

1999-01-05 Priority claimed from JP00076099A external-priority patent/JP4700148B2/ja

2000-07-18 Publication of JP2000200791A publication Critical patent/JP2000200791A/ja

2005-08-25 Publication of JP2000200791A5 publication Critical patent/JP2000200791A5/ja

2011-06-15 Application granted granted Critical

2011-06-15 Publication of JP4700148B2 publication Critical patent/JP4700148B2/ja

2019-01-05 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

239000004065 semiconductor Substances 0.000 description 11
239000000758 substrate Substances 0.000 description 4
239000012535 impurity Substances 0.000 description 3
230000005669 field effect Effects 0.000 description 2
108091006146 Channels Proteins 0.000 description 1
102000004129 N-Type Calcium Channels Human genes 0.000 description 1
108090000699 N-Type Calcium Channels Proteins 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
238000000034 method Methods 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1

JP00076099A 1999-01-05 1999-01-05 電圧駆動型バイポーラ半導体装置 Expired - Fee Related JP4700148B2 (ja)

Application Number	Priority Date	Filing Date	Title
JP00076099A JP4700148B2 (ja)	1999-01-05	1999-01-05	電圧駆動型バイポーラ半導体装置

Application Number	Priority Date	Filing Date	Title
JP00076099A JP4700148B2 (ja)	1999-01-05	1999-01-05	電圧駆動型バイポーラ半導体装置

Application Number	Title	Priority Date	Filing Date
JP00076099A Expired - Fee Related JP4700148B2 (ja)	1999-01-05	1999-01-05	電圧駆動型バイポーラ半導体装置

Country	Link
JP (1)	JP4700148B2 (de)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4848595B2 (ja) *	2001-05-16	2011-12-28	株式会社デンソー	炭化珪素半導体装置及びその製造方法
US7345310B2 (en) *	2005-12-22	2008-03-18	Cree, Inc.	Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof
JP2010192710A (ja) *	2009-02-18	2010-09-02	Hitachi Cable Ltd	半導体装置及び半導体装置の製造方法
JP6070155B2 (ja) *	2012-12-18	2017-02-01	住友電気工業株式会社	炭化珪素半導体装置

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5858815B2 (ja) *	1976-02-06	1983-12-27	日本電気株式会社	イオン注入法
JPS6062149A (ja) *	1983-09-14	1985-04-10	Nec Kansai Ltd	半導体装置
JPS6325971A (ja) *	1987-04-02	1988-02-03	Nec Corp	半導体装置
JPH06188376A (ja) *	1992-12-21	1994-07-08	Toyota Autom Loom Works Ltd	半導体装置
JPH0738080A (ja) *	1993-06-29	1995-02-07	Meidensha Corp	複合型半導体装置
JP3158973B2 (ja) *	1995-07-20	2001-04-23	富士電機株式会社	炭化けい素縦型ｆｅｔ

1999
- 1999-01-05 JP JP00076099A patent/JP4700148B2/ja not_active Expired - Fee Related

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