JP2000212559A - Fluorescent material and field emission type displaying device by using the same - Google Patents
Fluorescent material and field emission type displaying device by using the sameInfo
- Publication number
- JP2000212559A JP2000212559A JP11014443A JP1444399A JP2000212559A JP 2000212559 A JP2000212559 A JP 2000212559A JP 11014443 A JP11014443 A JP 11014443A JP 1444399 A JP1444399 A JP 1444399A JP 2000212559 A JP2000212559 A JP 2000212559A
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- field emission
- fluorescent material
- anode
- emission type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title abstract description 9
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 9
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 9
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 9
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 50
- 229910052702 rhenium Inorganic materials 0.000 claims description 8
- 229910052684 Cerium Inorganic materials 0.000 abstract description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052693 Europium Inorganic materials 0.000 abstract description 3
- 230000004907 flux Effects 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 238000001035 drying Methods 0.000 abstract description 2
- 238000001354 calcination Methods 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 abstract 1
- 238000005303 weighing Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 239000010410 layer Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 208000016169 Fish-eye disease Diseases 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 101150051106 SWEET11 gene Proteins 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- -1 nS: Ag Chemical compound 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Luminescent Compositions (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、陰極から電界放出
された電子を陽極の蛍光体に射突させて発光を得る蛍光
体及びこの蛍光体を利用した電界放出形表示装置に関す
る。本発明は、特に、輝度と寿命特性に優れたＹＡＧ組
成の蛍光体及びこの蛍光体を有する電界放出形表示装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a phosphor that emits light by causing electrons emitted from a cathode to emit light to a phosphor on an anode, and a field emission display device using the phosphor. The present invention particularly relates to a phosphor having a YAG composition excellent in luminance and life characteristics, and a field emission display device having the phosphor.
【０００２】[0002]
【従来の技術】加速電圧が２ｋＶ以下で使用されるいわ
ゆる低速電子線用蛍光体には、蛍光体自体の抵抗が低い
ことが求められる。現在この要件を満たす材料としてＺ
ｎＳ：Ａｇなどのいわゆる硫化物蛍光体があるが、この
蛍光体は電子線照射により分解飛散し素子内のカソード
の劣化を引き起こし、ひいては発光素子自体の寿命を低
下させるなど信頼性の点で問題を抱えている。特に、電
界放出形表示装置では、前記飛散物質によるエミッタの
汚染が性能低下の大きな原因の一つになっている。2. Description of the Related Art A phosphor for a so-called low-speed electron beam used at an acceleration voltage of 2 kV or less is required to have low resistance of the phosphor itself. Currently, Z
There is a so-called sulfide phosphor such as nS: Ag, which is decomposed and scattered by irradiation with an electron beam to cause deterioration of a cathode in the element, thereby reducing reliability of the light emitting element itself. I have In particular, in the field emission type display device, contamination of the emitter by the scattered substance is one of the major causes of performance degradation.
【０００３】このような問題を解決するために電子線に
より分解し難い組成の材料が求められるが、このような
材料の殆どは絶縁物であることが多い。しかしながら最
近では抵抗が低くて分解し難い蛍光体として、ＺｎＧａ
2 Ｏ4 ：Ｍｎ，ＺｎＧａ2 Ｏ 4 などが提案されているが
十分な輝度が得られていない。また絶縁性の蛍光体にＩ
ｎ2 Ｏ3 などの導電物質を添加して蛍光体膜の抵抗を下
げるという提案もある。しかし、このような材料は確か
に蛍光体の抵抗は低いが輝度も低く、実用にはなりにく
い。また、導電物質を添加する方法では、導電物質によ
る無効電流が増えこれによる発熱などが信頼性低下の原
因になる。In order to solve such a problem, an electron beam is used.
Materials with a composition that is more difficult to decompose are required.
Most of the materials are often insulators. However, most
In recent years, ZnGa is used as a phosphor that has low resistance and is difficult to decompose.
TwoOFour: Mn, ZnGaTwoO FourEtc. have been proposed
Sufficient luminance has not been obtained. In addition, I
nTwoOThreeAdd a conductive material such as
There is also a proposal to do so. But such materials are certain
Phosphors have low resistance but low brightness,
No. In addition, in the method of adding a conductive substance,
The reactive current increases and the heat generated by this increases the reliability.
Cause.
【０００４】そこで、本出願人は特願平８−２９３９３
４号において、低抵抗で発光輝度の高い硫化物系以外の
低速電子線用蛍光体として、Ｌｎ3 （Ａｌ1-x Ｇａx ）
5 Ｏ 12：Ｒｅ（Ｌｎ＝Ｙ，Ｌａ，Ｇｄ、Ｒｅ＝Ｔｂ，Ｃ
ｅ，Ｅｕ、０．４≦ｘ＜０．８）で表される蛍光体を提
案した。Accordingly, the present applicant has filed Japanese Patent Application No. 8-29393.
No.4, other than sulfide type with low resistance and high emission brightness
As a low-speed electron beam phosphor, LnThree(Al1-xGax)
FiveO 12: Re (Ln = Y, La, Gd, Re = Tb, C
e, Eu, 0.4 ≦ x <0.8)
I thought.
【０００５】通常３価以外に１価を有するＧａの固溶量
ｘを上記のような範囲に限定したことにより、前記蛍光
体においては酸素欠陥が生じやすくなり、これによって
発生した不対電子が導電性を向上させ、抵抗が小さくな
ったものと考えられていた。このように前記蛍光体には
導電物質を添加する必要がないので、導電物質による無
効電流が発熱を生じて信頼性や輝度の低下を招いてしま
うことがなく、低速電子線によって実用的な発光輝度が
得られるものとされていた。[0005] By limiting the amount x of the solid solution of Ga, which usually has a valency other than trivalence, to the above range, oxygen vacancies are likely to occur in the phosphor, and the unpaired electrons generated by the deficiency are reduced. It was thought that the conductivity was improved and the resistance was reduced. As described above, since it is not necessary to add a conductive substance to the phosphor, a reactive current due to the conductive substance does not generate heat to cause a decrease in reliability or brightness, and practical light emission by a low-speed electron beam is prevented. It was assumed that luminance could be obtained.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、前述し
た蛍光体には寿命が短いという問題があった。これは、
本発明者等の知見によれば、ＡｌとＧａのイオン半径が
異なるために結晶に歪みが生じるためと考えられる。従
って、前述した従来の蛍光体を電界放出形表示装置の陽
極に実装して評価すると、たとえ輝度が十分であって
も、蛍光体自体の劣化を示す発光効率の低下が著しいた
め、発光素子としては実用に耐えないという問題があっ
た。However, the above-mentioned phosphor has a problem that its life is short. this is,
According to the knowledge of the present inventors, it is considered that the ionic radii of Al and Ga are different from each other, which causes distortion in the crystal. Therefore, when the above-mentioned conventional phosphor is mounted on the anode of the field emission display and evaluated, even if the luminance is sufficient, the luminous efficiency, which indicates the deterioration of the phosphor itself, is remarkably reduced, and thus the phosphor is used as a light-emitting element. Has a problem that it cannot withstand practical use.
【０００７】本発明は、前述した蛍光体を改良して輝度
とともに寿命についても満足しうる性能を達成し、これ
を用いて輝度と寿命の双方について実用的な性能を有す
る蛍光体及びかかる蛍光体を備えた電界放出形表示装置
を実現することを目的としている。The present invention improves the above-described phosphor to achieve a performance that satisfies not only the luminance but also the lifetime, and uses the phosphor to have practical performance in both the luminance and the lifetime. It is an object of the present invention to realize a field emission display device provided with the above.
【０００８】[0008]
【課題を解決するための手段】請求項１に記載された蛍
光体は、Ｌｎ3 （Ａｌ1-x Ｇａx ）5 Ｏ12：Ｒｅ（但し
Ｌｎ＝Ｙ，Ｌａ，Ｇｄ、Ｒｅ＝Ｔｂ，Ｃｅ，Ｅｕ、０．
８≦ｘ≦１．０）で表されることを特徴としている。According to a first aspect of the present invention, there is provided a phosphor comprising Ln 3 (Al 1 -x Ga x ) 5 O 12 : Re (where Ln = Y, La, Gd, Re = Tb, Ce). , Eu, 0.
8 ≦ x ≦ 1.0).
【０００９】請求項２に記載された電界放出形表示装置
は、内部が高真空状態に排気された外囲器と、前記外囲
器の内部に設けられた電界放出形陰極と、前記外囲器の
内部に前記電界放出形陰極に対面して設けられた蛍光体
を有する陽極とを有する電界放出形表示装置において、
前記蛍光体が、Ｌｎ3 （Ａｌ1-x Ｇａx ）5 Ｏ12：Ｒｅ
（但しＬｎ＝Ｙ，Ｌａ，Ｇｄ、Ｒｅ＝Ｔｂ，Ｃｅ，Ｅ
ｕ、０．８≦ｘ≦１．０）で表される蛍光体であること
を特徴としている。According to a second aspect of the present invention, there is provided a field emission display device, wherein the envelope is evacuated to a high vacuum state, a field emission cathode provided inside the envelope, and A field emission type display device having an anode having a phosphor provided facing the field emission type cathode inside the device,
Said phosphor, Ln 3 (Al 1-x Ga x) 5 O 12: Re
(However, Ln = Y, La, Gd, Re = Tb, Ce, E
u, 0.8 ≦ x ≦ 1.0).
【００１０】請求項３に記載された電界放出形表示装置
は、請求項２記載の電界放出形表示装置において、前記
陽極には２ｋＶ以下の陽極電圧が印加されることを特徴
としている。According to a third aspect of the present invention, in the field emission type display device according to the second aspect, an anode voltage of 2 kV or less is applied to the anode.
【００１１】[0011]
【発明の実施の形態】本発明は電界放出形表示装置（Ｆ
ＥＤ）に関する。図１に示すように、この電界放出形表
示装置１は、所定間隔をおいて対面する陰極基板２と陽
極基板３を有している。図１には示されていないが、陰
極基板２と陽極基板３の外周部の間にはスペーサ部材が
設けられて両基板を封着しており、全体として薄型パネ
ル状（略板状）の外囲器４が構成されている。外囲器４
の内部は高真空状態に排気されている。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a field emission display (F).
ED). As shown in FIG. 1, the field emission display 1 has a cathode substrate 2 and an anode substrate 3 facing each other at a predetermined interval. Although not shown in FIG. 1, a spacer member is provided between the outer peripheral portions of the cathode substrate 2 and the anode substrate 3 to seal both substrates, and the entire panel has a thin panel shape (substantially plate shape). An envelope 4 is configured. Envelope 4
Is evacuated to a high vacuum.
【００１２】陰極基板２の内面には、電界放出形陰極５
が形成されている。陰極基板２の内面には、陰極導体６
が形成されている。陰極導体６の上には絶縁層７が形成
されている。絶縁層７の上にはゲート電極８が形成され
ている。ゲート電極８と絶縁層７には、陰極導体６に達
する孔９が形成されている。孔９の底に露出した陰極導
体６の上にはコーン形状のエミッタ１０が形成されてい
る。本例では、陰極導体６とゲート電極８はそれぞれス
トライプ状であり、互いに交差してマトリクスを構成し
ている。A field emission cathode 5 is provided on the inner surface of the cathode substrate 2.
Are formed. A cathode conductor 6 is provided on the inner surface of the cathode substrate 2.
Are formed. On the cathode conductor 6, an insulating layer 7 is formed. A gate electrode 8 is formed on the insulating layer 7. A hole 9 reaching the cathode conductor 6 is formed in the gate electrode 8 and the insulating layer 7. On the cathode conductor 6 exposed at the bottom of the hole 9, a cone-shaped emitter 10 is formed. In this example, the cathode conductor 6 and the gate electrode 8 are each in the form of a stripe, and cross each other to form a matrix.
【００１３】陽極基板３の内面には、陽極１１が形成さ
れている。陽極基板３の内面には透光性と導電性をを有
する陽極導体１２が形成されている。陽極導体１２は、
例えばＩＴＯによって構成することができる。陽極導体
１２の上には、蛍光体層１３が形成されている。本例で
は、陽極導体１２及び蛍光体層１３はべた状に形成され
ている。An anode 11 is formed on the inner surface of the anode substrate 3. An anode conductor 12 having translucency and conductivity is formed on the inner surface of the anode substrate 3. The anode conductor 12
For example, it can be constituted by ITO. On the anode conductor 12, a phosphor layer 13 is formed. In this example, the anode conductor 12 and the phosphor layer 13 are formed in a solid shape.
【００１４】本発明の蛍光体は、Ｌｎ3 （Ａｌ1-x Ｇａ
x ）5 Ｏ12：Ｒｅ（Ｌｎ＝Ｙ，Ｌａ，Ｇｄ、Ｒｅ＝Ｔ
ｂ，Ｃｅ，Ｅｕ、０．８≦ｘ≦１）で表される蛍光体で
ある。ｘの範囲をこのように限定したことにより、この
蛍光体は、低抵抗で、発光輝度が高く、しかも十分な寿
命を有するものとなった。The phosphor of the present invention comprises Ln 3 (Al 1-x Ga
x ) 5 O 12 : Re (Ln = Y, La, Gd, Re = T
b, Ce, Eu, 0.8 ≦ x ≦ 1). By limiting the range of x in this way, the phosphor has low resistance, high emission luminance, and a sufficient life.
【００１５】この電界放出形表示装置１を駆動するに
は、陰極導体６とゲート電極８の一方を走査し、これに
同期して他方に表示信号を入力する。陽極１１には常時
表示電圧を与えておく。陰極導体６とゲート電極８で構
成されるマトリクスの選択された箇所から電子が放出さ
れ、これに対応する陽極１１の一部に電子が射突して蛍
光体層１３の一部を発光させる。これによって陽極１１
において任意のグラフィック表示を行うことができる。To drive the field emission display 1, one of the cathode conductor 6 and the gate electrode 8 is scanned, and a display signal is input to the other in synchronization with the scanning. A display voltage is always applied to the anode 11. Electrons are emitted from a selected portion of the matrix formed by the cathode conductor 6 and the gate electrode 8, and the electrons impinge on a corresponding part of the anode 11 to cause a part of the phosphor layer 13 to emit light. Thereby, the anode 11
, An arbitrary graphic display can be performed.
【００１６】[0016]
【実施例】高速ではＡｌ／Ｇａ比でＧａ比が大きくなる
と寿命が悪くなると従来言われている。しかしながら、
所謂２ｋＶ以下の低速電子線の場合は、蛍光体塗布層の
電気伝導が重要である。すなわち、抵抗値が高いと電流
が蛍光体層の極表面に集中し、また、抵抗による発熱で
蛍光体の温度が上がり寿命特性が悪くなると考えられ
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS At high speeds, it has been conventionally said that the life becomes worse when the Ga ratio is increased by the Al / Ga ratio. However,
In the case of a so-called slow electron beam of 2 kV or less, the electric conduction of the phosphor coating layer is important. That is, it is considered that when the resistance value is high, the current concentrates on the very surface of the phosphor layer, and the heat generated by the resistance raises the temperature of the phosphor and deteriorates the life characteristics.
【００１７】また、一般式Ｌｎ3 （ＡＬ1-x Ｇａx ）5
Ｏ12：Ｒｅ（Ｌｎ＝Ｙ，Ｌａ，Ｇｄ、Ｒｅ＝Ｔｂ，Ｃ
ｅ，Ｅｕ）の蛍光体において、Ｇａは通常３価である
が、１価状態も存在するため、Ｇａ比率を増せば導電性
が改善されると考えられる。The general formula Ln 3 (AL 1-x Ga x ) 5
O 12 : Re (Ln = Y, La, Gd, Re = Tb, C
In the phosphor of (e, Eu), Ga is usually trivalent, but a monovalent state also exists. Therefore, it is considered that the conductivity is improved by increasing the Ga ratio.
【００１８】（１）実施例１ Ｙ2 Ｏ3 ３８．５ｇ、Ａｌ2 Ｏ3 １８．３ｇ、Ｇａ2 Ｏ
3 ２２．５ｇ、Ｔｂ4Ｏ7 ３．３ｇをそれぞれ秤量して
エタノール中で分散後乾燥し、さらにこれにフラックス
としてＢａＣｌ2 を０．３ｍｏｌ／ＹＡＧ１ｍｏｌ添加
しよく混合した。これをアルミナルツボに充填し１５０
０℃で２時間焼成すると、組成式Ｙ3 （Ａｌ0.6 Ｇａ
0.4 ）5 Ｏ12：Ｔｂ（Ｔｂ＝５ｍｏｌ％／Ｙ１ｍｏｌ）
で表される蛍光体が作製できる。(1) Example 1 38.5 g of Y 2 O 3, 18.3 g of Al 2 O 3 , Ga 2 O
3 22.5 g, was weighed respectively Tb 4 O 7 3.3 g dried after dispersion in ethanol, the BaCl 2 and mixed well by adding 0.3mol / YAG1mol as further flux thereto. This was filled into an alumina crucible and 150
When calcined at 0 ° C. for 2 hours, the composition formula Y 3 (Al 0.6 Ga
0.4 ) 5 O 12 : Tb (Tb = 5 mol% / Y1 mol)
Can be produced.
【００１９】このような方法により、上記一般式におい
てＸ＝０から１までのいくつかの値について上記蛍光体
の試料を作製した。また、この時、焼成は窒素中で行っ
た。According to such a method, samples of the phosphor were prepared for several values of X = 0 to 1 in the above general formula. At this time, firing was performed in nitrogen.
【００２０】この蛍光体を硝酸で洗浄後分球乾燥した
後、この蛍光体にエチルセルロースバインダーを含むビ
ークルを用いペーストにし、ＩＴＯ電極からなるアノー
ド基板上にスクリーン印刷法で塗布し、５００℃大気中
で焼成しバインダーを除去し、蛍光体を塗布したアノー
ド基板を蛍光体の各試料ごとに作製した。このアノード
基板を用い、前述したような構造のＦＥＤを蛍光体の各
試料ごとに作製して評価用の素子とした。After washing the phosphor with nitric acid and drying with a sphere, the phosphor is converted into a paste using a vehicle containing an ethylcellulose binder, and the paste is applied on an anode substrate composed of ITO electrodes by a screen printing method. The anode substrate coated with the phosphor was prepared for each sample of the phosphor. Using this anode substrate, an FED having the above-described structure was produced for each phosphor sample to provide a device for evaluation.
【００２１】図２はアノード電圧６００Ｖの時のＧａ含
有率Ｘ（Ａｌ／Ｇａ比）と相対輝度の関係を示したもの
である。図３は同様に発光開始アノード電圧と相対輝度
の関係を示したものである。図３において発光開始電圧
が低くなるということは、蛍光体表面でのチャージアッ
プが低い電圧で解消されることを意味し、蛍光体自体の
抵抗値が小さくなっていることを示す。FIG. 2 shows the relationship between the Ga content X (Al / Ga ratio) and the relative luminance when the anode voltage is 600 V. FIG. 3 similarly shows the relationship between the light emission start anode voltage and the relative luminance. In FIG. 3, a decrease in the light emission start voltage means that the charge-up on the phosphor surface is eliminated by a low voltage, which indicates that the resistance value of the phosphor itself is reduced.
【００２２】Ｇａリッチの方が抵抗値が低い傾向が見え
るが、これはＧａは通常の３価以外に１価を持つため、
Ｇａの固溶により容易に酸素欠陥ができやすくなるため
これが導電性に関与しているものと思われる。これら試
料について寿命試験を行った結果を図４に示す。このよ
うにＧａ組成比が大きくなるにつれ寿命特性が改善され
ることが分かる。It can be seen that the resistance value of Ga rich is lower than that of Ga. This is because Ga has monovalent valence other than normal trivalent valence.
Oxygen vacancies easily occur due to solid solution of Ga, which is considered to be involved in conductivity. FIG. 4 shows the results of a life test performed on these samples. Thus, it can be seen that the life characteristics are improved as the Ga composition ratio increases.
【００２３】以上の実験結果又は各試料の比較から、前
記一般式の蛍光体においてＸの数値範囲を０．８以上１
以下とすれば、本発明の目的は達成されるものと考えら
れる。即ち、特にＦＥＤ用の蛍光体に用途を限定して考
えれば、前記一般式の蛍光体においてはＸの範囲は０．
８≦ｘ≦１が好ましい。これに対して、従来のＸの数値
範囲では、初期輝度は高いが寿命が良くないのでＦＥＤ
に用いる蛍光体としては好ましくないのである。From the above experimental results and comparison of each sample, the value range of X in the phosphor of the above general formula was 0.8 or more and 1 or more.
It is considered that the object of the present invention will be achieved by the following. That is, in particular, when the application is limited to the phosphor for FED, the range of X is 0.1 in the phosphor of the general formula.
It is preferable that 8 ≦ x ≦ 1. On the other hand, in the conventional numerical value range of X, the initial luminance is high but the life is not good.
It is not preferable as a phosphor used for the above.
【００２４】（２）実施例２ 同様にして、Ｙ2 Ｏ3 の代わりにＧｄ2 Ｏ3 を用いＧａ
2 Ｏ3 量を変えて、Ｘ＝０．９５の試料Ｇｄ3 （Ａｌ
0.05Ｇａ0.95）Ｏ12：Ｔｂと、Ｘ＝０．４５の比較試料
Ｇｄ3 （Ａｌ0.55Ｇａ0.45）5 Ｏ12：Ｔｂを作製し、同
様にそれぞれＦＥＤに実装して寿命特性を比較評価し
た。寿命試験時間５００時間で評価したところ、Ｘ＝
０．４５の比較試料が初期輝度の３０％に低下したのに
対し、本発明の実施例であるＸ＝０．９５の試料は初期
輝度の８５％と良好な値を示した。[0024] (2) in the same manner as in Example 2, Ga using Gd 2 O 3 instead of Y 2 O 3
By changing the amount of 2 O 3, the sample Gd 3 (Al
0.05 Ga 0.95 ) O 12 : Tb and a comparative sample Gd 3 (Al 0.55 Ga 0.45 ) 5 O 12 : Tb with X = 0.45 were prepared, similarly mounted on FEDs, and their life characteristics were comparatively evaluated. When the life test time was evaluated at 500 hours, X =
While the comparative sample of 0.45 decreased to 30% of the initial luminance, the sample of X = 0.95, which is an example of the present invention, showed a good value of 85% of the initial luminance.
【００２５】（３）実施例３ 発光中心にＥｕ2 Ｏ3 を用いＧａ2 Ｏ3 量がＸ＝１の試
料Ｙ3 Ｇａ5 Ｏ12：Ｅｕと、Ｘ＝０．４５の比較試料Ｙ
3 （Ａｌ0 。55Ｇａ0.45）5 Ｏ12：Ｅｕをそれぞれ作製
し、同様にＦＥＤにそれぞれ実装して比較評価した。な
おＥｕの濃度は３ｍｏｌ％／Ｙとした。結果は、Ｘ＝
０．４５の比較試料の輝度１００に対し、本発明の実施
例であるＸ＝１の試料は１７０の赤色の輝度を示した。
発光開始電圧もＸ＝０．４５の比較試料の２００Ｖに対
し、本実施例の試料は１００Ｖと低く、蛍光体の抵抗が
小さくなっていることを示した。同様にして寿命試験を
行った結果、比較試料が当初輝度の２０％に低下してい
るのに対し、本実施例の試料は７５％の残存率であっ
た。(3) Example 3 A sample Y 3 Ga 5 O 12 : Eu using Eu 2 O 3 as the emission center and having a Ga 2 O 3 amount of X = 1, and a comparative sample Y having X = 0.45.
3 (Al 0 55 Ga 0.45. ) 5 O 12: Eu were respectively prepared, were compared and evaluated with each implemented similarly to the FED. The concentration of Eu was 3 mol% / Y. The result is X =
The sample of X = 1, which is an example of the present invention, exhibited a red luminance of 170, whereas the luminance of the comparative sample of 0.45 was 100.
The light emission start voltage was as low as 100 V in the sample of this example, compared to 200 V in the comparative sample with X = 0.45, indicating that the resistance of the phosphor was small. As a result of the same life test, the luminance of the comparative sample was reduced to 20% of the initial luminance, whereas the sample of this example had a residual ratio of 75%.
【００２６】（４）その他の実施例 なお、前記一般式におけるＬｎがＬａである場合には、
原料物質としてはＬａ 2 Ｏ3 を用いる。前記一般式にお
けるＲｅがＣｅである場合には、原料物質としてはＣｅ
Ｏ2 を用いる。これらの物質を用いた蛍光体の合成の方
法は前記第１〜第３実施例と略同様である。(4) Other Examples When Ln in the above general formula is La,
The raw material is La TwoOThreeIs used. In the above general formula
When Re is Ce, the raw material is Ce.
OTwoIs used. For the synthesis of phosphors using these substances
The method is substantially the same as in the first to third embodiments.
【００２７】以上説明した各実施例に示したように、Ｇ
ａ組成を多くしたＹＡＧ蛍光体を使用することにより寿
命が改善されたＦＥＤを得ることができる。また、今回
の蛍光体はフラックスを用いて作製したものを使用した
が、作製方法にはよらず組成比が今回の範囲に入ってい
れば同様の効果が得られることは言うまでもない。As shown in each of the embodiments described above, G
The use of a YAG phosphor having a large a composition makes it possible to obtain an FED with an improved lifespan. The phosphor used in this case was manufactured using a flux, but it goes without saying that the same effect can be obtained as long as the composition ratio is within the range of this time regardless of the manufacturing method.
【００２８】[0028]
【発明の効果】本発明によれば、Ｌｎ3 （Ａｌ1-x Ｇａ
x ）5 Ｏ12：Ｒｅ（Ｌｎ＝Ｙ，Ｌａ，Ｇｄ、Ｒｅ＝Ｔ
ｂ，Ｃｅ，Ｅｕ）蛍光体において、Ｇａの量を０．８≦
ｘ≦１で限定したので、これを用いた電界放出形表示装
置においては十分な輝度とともに寿命も改善されて素子
としての実用化が可能となった。According to the present invention, Ln 3 (Al 1-x Ga
x ) 5 O 12 : Re (Ln = Y, La, Gd, Re = T
(b, Ce, Eu) phosphor, the amount of Ga is set to 0.8 ≦
Since x is limited to 1, the field emission display device using the same has a sufficient luminance and an improved life, and can be put to practical use as an element.
【図１】本発明の実施の形態の一例である電界放出形表
示装置の断面図である。FIG. 1 is a cross-sectional view of a field emission display according to an embodiment of the present invention.
【図２】Ｇａ含有率Ｘと相対輝度の関係を示したグラフ
である。FIG. 2 is a graph showing the relationship between Ga content X and relative luminance.
【図３】発光開始アノード電圧と相対輝度の関係を示し
たグラフである。FIG. 3 is a graph showing a relationship between a light emission start anode voltage and a relative luminance.
【図４】Ｇａ含有率Ｘと輝度残存率（寿命）の関係を示
したグラフである。FIG. 4 is a graph showing a relationship between a Ga content X and a luminance remaining rate (lifetime).
外囲器 １ 電界放出形表示装置 ５ 電界放出形陰極 １１ 陽極 １３ 蛍光体層 Enclosure 1 Field emission display 5 Field emission cathode 11 Anode 13 Phosphor layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 土岐 均 千葉県茂原市大芝629 双葉電子工業株式 会社内 (72)発明者 野村 裕司 千葉県茂原市大芝629 双葉電子工業株式 会社内 (72)発明者 山元 明 東京都杉並区永福３−23−３ Ｆターム(参考） 4H001 CA06 XA08 XA13 XA31 XA39 XA57 XA64 YA58 YA63 YA65 5C036 EE01 EF01 EF06 EG36 EH12 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Hitoshi Toki 629 Oshiba, Mobara-shi, Chiba Futaba Electronics Co., Ltd. (72) Inventor Yuji Nomura 629 Oshiba, Mobara-shi, Chiba Futaba Electronics Co., Ltd. (72) Inventor Akira Yamamoto 3-23-3 Eifuku, Suginami-ku, Tokyo F-term (reference) 4H001 CA06 XA08 XA13 XA31 XA39 XA57 XA64 YA58 YA63 YA65 5C036 EE01 EF01 EF06 EG36 EH12
Claims (3)
（但しＬｎ＝Ｙ，Ｌａ，Ｇｄ、Ｒｅ＝Ｔｂ，Ｃｅ，Ｅ
ｕ、０．８≦ｘ≦１．０）で表される蛍光体。1. Ln 3 (Al 1-x Ga x ) 5 O 12 : Re
(However, Ln = Y, La, Gd, Re = Tb, Ce, E
u, 0.8 ≦ x ≦ 1.0).
と、前記外囲器の内部に設けられた電界放出形陰極と、
前記外囲器の内部に前記電界放出形陰極に対面して設け
られた蛍光体を有する陽極とを有する電界放出形表示装
置において、 前記蛍光体が、Ｌｎ3 （Ａｌ1-x Ｇａx ）5 Ｏ12：Ｒｅ
（但しＬｎ＝Ｙ，Ｌａ，Ｇｄ、Ｒｅ＝Ｔｂ，Ｃｅ，Ｅ
ｕ、０．８≦ｘ≦１．０）で表される蛍光体であること
を特徴とする電界放出形表示装置。2. An envelope whose inside is evacuated to a high vacuum state, a field emission cathode provided inside the envelope,
A field emission display device comprising: an anode having a phosphor provided facing the field emission cathode inside the envelope; wherein the phosphor is Ln 3 (Al 1 -x Ga x ) 5 O 12 : Re
(However, Ln = Y, La, Gd, Re = Tb, Ce, E
u, 0.8 ≦ x ≦ 1.0) is a phosphor represented by the following formula:
印加されることを特徴とする請求項２記載の電界放出形
表示装置。3. The field emission display device according to claim 2, wherein an anode voltage of 2 kV or less is applied to said anode.
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|---|---|---|---|
| JP01444399A JP3879298B2 (en) | 1999-01-22 | 1999-01-22 | Field emission display |
| KR1020000002802A KR20000053557A (en) | 1999-01-22 | 2000-01-21 | Phosphor and fluorescent display device having same incorporated therein |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01444399A JP3879298B2 (en) | 1999-01-22 | 1999-01-22 | Field emission display |
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| JP3879298B2 JP3879298B2 (en) | 2007-02-07 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100336885C (en) * | 2004-07-06 | 2007-09-12 | 中国科学院上海硅酸盐研究所 | Yttrium gallate based trichromatic fluorescent material and method for making same |
| JP2015172196A (en) * | 2010-07-22 | 2015-10-01 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ | Garnet material, method for producing the same, and radiation-emitting component comprising the garnet material |
-
1999
- 1999-01-22 JP JP01444399A patent/JP3879298B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100336885C (en) * | 2004-07-06 | 2007-09-12 | 中国科学院上海硅酸盐研究所 | Yttrium gallate based trichromatic fluorescent material and method for making same |
| JP2015172196A (en) * | 2010-07-22 | 2015-10-01 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ | Garnet material, method for producing the same, and radiation-emitting component comprising the garnet material |
| KR101802549B1 (en) | 2010-07-22 | 2017-11-28 | 오스람 옵토 세미컨덕터스 게엠베하 | Garnet material, method for its manufacturing and radiation-emitting component comprising the garnet material |
| US10240086B2 (en) | 2010-07-22 | 2019-03-26 | Osram Opto Semiconductors Gmbh | Garnet material, method for its manufacturing and radiation-emitting component comprising the garnet material |
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