JP2000266230A - Semiconductor microvalve - Google Patents
Semiconductor microvalveInfo
- Publication number
- JP2000266230A JP2000266230A JP6919999A JP6919999A JP2000266230A JP 2000266230 A JP2000266230 A JP 2000266230A JP 6919999 A JP6919999 A JP 6919999A JP 6919999 A JP6919999 A JP 6919999A JP 2000266230 A JP2000266230 A JP 2000266230A
- Authority
- JP
- Japan
- Prior art keywords
- flexible portion
- valve
- flexible
- silicon substrate
- deformed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 230000002093 peripheral effect Effects 0.000 claims abstract description 12
- 238000005452 bending Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 27
- 229910052710 silicon Inorganic materials 0.000 abstract description 27
- 239000010703 silicon Substances 0.000 abstract description 27
- 238000006073 displacement reaction Methods 0.000 abstract description 13
- 239000012530 fluid Substances 0.000 abstract description 11
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 6
- 238000007789 sealing Methods 0.000 abstract description 5
- 238000013459 approach Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Electrically Driven Valve-Operating Means (AREA)
- Temperature-Responsive Valves (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、気体などの流体の
流量制御に用いられる半導体マイクロバルブに関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor microvalve used for controlling a flow rate of a fluid such as a gas.
【０００２】[0002]
【従来の技術】従来より、気体などの流体の流量制御に
用いられる半導体マイクロバルブとして、図３に示す構
成のものが提案されている（例えば、特開平７−４５３
８号公報）。図３に示した半導体マイクロバルブは、常
開型のバルブであって、厚み方向の一面（図３における
上面）から他面（図３における下面）にわたって貫通し
た貫通孔よりなる弁口１０ａが形成されたシリコン基板
１０と、中央部２２ａが図３および図４（ａ）に示すよ
うに弁口１０ａを開閉する弁体を兼ねた可撓部２２’と
を備えている。ここに、可撓部２２’は、周部２２ｃが
スペーサ３０を介してシリコン基板１０の上記一面側に
結合されている。なお、可撓部２２’の要所には、流体
の通る流通孔（図示せず）が形成されている。この流通
孔は、弁体により弁口１０ａが開かれた状態で弁口１０
ａと連通する。2. Description of the Related Art Conventionally, a semiconductor microvalve having a configuration shown in FIG. 3 has been proposed as a semiconductor microvalve used for controlling a flow rate of a fluid such as a gas (for example, Japanese Patent Laid-Open No. 7-453).
No. 8). The semiconductor microvalve shown in FIG. 3 is a normally-open type valve, and has a valve port 10a formed of a through hole penetrating from one surface (upper surface in FIG. 3) in the thickness direction to the other surface (lower surface in FIG. 3). As shown in FIGS. 3 and 4A, the central portion 22a includes a flexible portion 22 'also serving as a valve for opening and closing the valve port 10a. Here, the flexible portion 22 ′ has a peripheral portion 22 c coupled to the one surface side of the silicon substrate 10 via a spacer 30. In addition, a flow hole (not shown) through which a fluid passes is formed at a key portion of the flexible portion 22 '. When the valve opening 10a is opened by the valve body, the flow opening
Communicates with a.
【０００３】また、この半導体マイクロバルブでは、可
撓部２２’に通電し発熱させることによって可撓部２
２’を熱膨張させることにより、可撓部２２’を湾曲変
位させている。In this semiconductor microvalve, the flexible portion 22 'is energized to generate heat so that the flexible portion 2' is heated.
By thermally expanding 2 ′, the flexible portion 22 ′ is bent and displaced.
【０００４】[0004]
【発明が解決しようとする課題】ところで、上記従来構
成の半導体マイクロバルブでは、弁口１０ａを入力側と
して流体を導入するようにして使用する場合、図４
（ａ）に示すように弁口１０ａを可撓部２２’の中央部
２２ａよりなる弁体によって閉じた状態において、可撓
部２２’は、弁口１０ａから図４（ｂ）中に矢印で示す
向きに流体の圧力を受ける。つまり、弁口１０ａ側から
の流体の圧力によって、可撓部２２’を押し戻す向きに
力が働く。可撓部２２’の材料として例えばシリコンを
使用した場合、消費電力や変位量の設計仕様にもよる
が、可撓部２２’の厚みはおよそ１０μｍ〜数１０μｍ
程度であることが多く、入力圧力が高い場合には、弁体
（可撓部２２’の中央部２２ａ）の一部が図４（ｂ）に
示すように変形して浮き上がってしまい、リークが発生
する恐れがあった（つまり、バルブを完全に締め切れな
い状態が発生してしまう恐れがあった）。In the above-described conventional semiconductor microvalve, when the valve is used with the valve port 10a as an input side and a fluid is introduced, FIG.
As shown in FIG. 4A, when the valve port 10a is closed by the valve body including the central portion 22a of the flexible portion 22 ', the flexible portion 22' is moved from the valve port 10a by an arrow in FIG. Subject to fluid pressure in the direction shown. That is, the force of the fluid from the valve port 10a exerts a force in a direction to push back the flexible portion 22 '. When, for example, silicon is used as the material of the flexible portion 22 ′, the thickness of the flexible portion 22 ′ is about 10 μm to several tens μm, depending on the design specifications of power consumption and displacement.
When the input pressure is high, a part of the valve body (the central portion 22a of the flexible portion 22 ') is deformed as shown in FIG. There was a possibility that this would occur (that is, there would be a situation where the valve could not be completely closed).
【０００５】また、可撓部２２’自身の熱膨張により湾
曲変位を生じさせる方式の場合、他の一般的に良く知ら
れているバイメタルによる駆動と比較して、可撓部２
２’の変位量を大きくとりにくいという不具合もあっ
た。[0005] In the case of a method in which a bending displacement is caused by the thermal expansion of the flexible portion 22 'itself, the flexible portion 2' is driven in comparison with other generally well-known bimetal driving.
There was also a problem that it was difficult to take a large displacement amount of 2 '.
【０００６】本発明は上記事由に鑑みて為されたもので
あり、その目的は、可撓部の変位量が大きく且つ良好な
シール特性が得られる半導体マイクロバルブを提供する
ことにある。The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a semiconductor microvalve in which the displacement of a flexible portion is large and good sealing characteristics can be obtained.
【０００７】[0007]
【課題を解決するための手段】請求項１の発明は、上記
目的を達成するために、厚み方向の一面から他面にわた
って弁口が形成され且つ上記一面において弁口の周縁か
ら厚み方向に突設された弁座を有する半導体基板と、半
導体基板の上記一面側に結合された支持部に支持された
可撓性を有する可撓部と、可撓部に設けられ熱膨張を利
用して可撓部を変形させる駆動部と、可撓部から上記一
面に近づく向きに突設され可撓部の撓みに応じて上記弁
座に接離する弁体とを備え、可撓部は、支持部と弁体と
の間に、弁体側の端部と支持部側の端部とが上記厚み方
向において段違いになるように該可撓部を変形させる向
きへあらかじめ変形された変形部が形成されてなること
を特徴とするものであり、バルブを閉じた状態では可撓
部から半導体基板の上記一面に近づく向きに突設された
弁体が弁座に接触することによって弁口を閉じているの
で、従来のように可撓部の中央部が弁体を兼ねている場
合に比べて、半導体基板の上記他面側から上記一面側へ
向かって弁口を通る流体の圧力によって可撓部が変形し
て弁口が開くことを抑制することができるから、良好な
シール特性を得ることができ、また、熱膨張を利用して
可撓部を変形させる駆動部が可撓部に設けられているこ
とにより、従来のように可撓部自身の熱膨張を利用して
可撓部を変位させる場合に比べて可撓部の変位量を大き
くすることができる。さらに、可撓部は、支持部と弁体
との間に、弁体側の端部と支持部側の端部とが上記厚み
方向において段違いになるように該可撓部を変形させる
向きへあらかじめ変形された変形部が形成されているの
で、駆動部により可撓部を変形させる場合に可撓部を確
実に所望の向きへ変形させることができ、また、従来よ
りも可撓部の変位量を大きくすることができる。According to a first aspect of the present invention, in order to achieve the above object, a valve port is formed from one surface in the thickness direction to the other surface, and a projection in the thickness direction from a peripheral edge of the valve port on the one surface. A semiconductor substrate having a provided valve seat; a flexible portion supported by a support portion coupled to the one surface side of the semiconductor substrate; and a flexible portion provided on the flexible portion and utilizing thermal expansion. A drive unit configured to deform the flexible portion, and a valve body protruding from the flexible portion in a direction approaching the one surface and coming into contact with and separating from the valve seat in accordance with the bending of the flexible portion. And a deformed portion that is deformed in advance in a direction to deform the flexible portion so that the end on the valve body side and the end on the support portion side are stepped in the thickness direction. The semiconductor substrate is separated from the flexible portion when the valve is closed. Since the valve body protruding in the direction approaching the one surface closes the valve port by contacting the valve seat, compared to the conventional case where the central portion of the flexible portion also serves as the valve body, Since the flexible portion can be prevented from being deformed by the pressure of the fluid passing through the valve port from the other surface side to the one surface side of the semiconductor substrate to open the valve port, good sealing characteristics can be obtained. In addition, since the driving portion for deforming the flexible portion using the thermal expansion is provided in the flexible portion, the flexible portion is displaced using the thermal expansion of the flexible portion itself as in the related art. The displacement amount of the flexible portion can be increased as compared with the case of making. Further, the flexible portion is pre-formed between the support portion and the valve body in such a direction that the flexible portion is deformed such that the end portion on the valve body side and the end portion on the support portion side are stepped in the thickness direction. Since the deformed deformed portion is formed, when the flexible portion is deformed by the driving portion, the flexible portion can be surely deformed in a desired direction, and the displacement amount of the flexible portion is more than the conventional case. Can be increased.
【０００８】[0008]
【発明の実施の形態】まず、本実施形態の半導体マイク
ロバルブの基本構成を図２に基づいて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, the basic structure of a semiconductor microvalve according to this embodiment will be described with reference to FIG.
【０００９】本基本構成では、図２（ａ）に示すよう
に、厚み方向の一面（図２（ａ）における上面）から他
面（図２（ａ）における下面）にわたって貫通する貫通
孔よりなる弁口１０ａが形成された第１のシリコン基板
１０の周部１１と、弁口１０ａを開閉する弁体２３を有
する第２のシリコン基板２０の周部２１とが接合されて
いる。なお、本実施形態の半導体マイクロバルブは常開
型のバルブであって、図２（ｂ）は弁体２３により弁口
１０ａが閉じられた状態を示す。In the present basic configuration, as shown in FIG. 2A, a through hole penetrates from one surface in the thickness direction (the upper surface in FIG. 2A) to the other surface (the lower surface in FIG. 2A). The peripheral portion 11 of the first silicon substrate 10 having the valve port 10a formed thereon and the peripheral portion 21 of the second silicon substrate 20 having the valve element 23 for opening and closing the valve port 10a are joined. The semiconductor microvalve of this embodiment is a normally-open type valve, and FIG. 2B shows a state in which the valve port 10 a is closed by the valve element 23.
【００１０】第１のシリコン基板１０は、上記弁体２３
が接離する弁座１３を、上記一面側において弁口１０ａ
の周縁から厚み方向に突設してある。The first silicon substrate 10 is provided with the valve 23
The valve seat 13 which is contacted and separated by the valve
Are protruded from the periphery in the thickness direction.
【００１１】一方、第２のシリコン基板２０は、枠状に
形成され第１のシリコン基板１０の周部１１に接合され
た該第２のシリコン基板２０の周部２１よりなる支持部
と、該支持部２１に支持された可撓性を有する可撓部２
２と、可撓部２２の中央部において第１のシリコン基板
１０に近づく向きに突設され可撓部２２の撓みに応じて
上記弁座１３に離接する上記弁体２３とを備えている。
ここにおいて、弁体２３は、可撓部２２の他の部位より
も厚肉に形成されている。なお、可撓部２２の要所に
は、流体の通る流通孔（図示せず）が形成されている。
この流通孔は、弁体２３により弁口１０ａが開かれた状
態で弁口１０ａと連通する。また、弁体２３、可撓部２
２、支持部２１、上記流通孔は第２のシリコン基板２０
をエッチング加工することによって形成されている。On the other hand, the second silicon substrate 20 has a supporting portion formed of a frame and joined to the peripheral portion 11 of the first silicon substrate 10 and the peripheral portion 21 of the second silicon substrate 20. Flexible portion 2 having flexibility supported by support portion 21
2 and the valve body 23 protruding from the central portion of the flexible portion 22 in a direction approaching the first silicon substrate 10 and separating from and coming into contact with the valve seat 13 according to the bending of the flexible portion 22.
Here, the valve body 23 is formed to be thicker than other portions of the flexible portion 22. In addition, a flow hole (not shown) through which a fluid passes is formed at a key point of the flexible portion 22.
The communication hole communicates with the valve port 10a when the valve port 10a is opened by the valve element 23. Further, the valve body 23, the flexible portion 2
2, the support portion 21 and the above-mentioned flow hole are the second silicon substrate 20
Is formed by etching.
【００１２】また、可撓部２２には、不純物拡散層（図
示せず）が形成され、可撓部２２上には該不純物拡散層
へ通電するための配線（図示せず）が形成されている。
要するに、本実施形態では、不純物拡散層が、熱膨張を
利用して可撓部２２を変形させる駆動部を構成してい
る。ここに、不純物拡散層と弁体２３との間、および不
純物拡散層と支持部２１との間それぞれに熱絶縁手段を
設けることにより、可撓部２２の温度を所望温度まで上
昇させるのに要する時間を短くすることができる。An impurity diffusion layer (not shown) is formed on the flexible portion 22, and a wiring (not shown) for supplying a current to the impurity diffusion layer is formed on the flexible portion 22. I have.
In short, in the present embodiment, the impurity diffusion layer constitutes a driving unit that deforms the flexible part 22 using thermal expansion. Here, it is necessary to raise the temperature of the flexible portion 22 to a desired temperature by providing thermal insulation means between the impurity diffusion layer and the valve body 23 and between the impurity diffusion layer and the support portion 21 respectively. Time can be shortened.
【００１３】次に、本実施形態の半導体マイクロバルブ
を図１に基づいて説明する。なお、図２と同様の構成要
素には同一の符号を付して説明を省略する。Next, the semiconductor microvalve of this embodiment will be described with reference to FIG. The same components as those in FIG. 2 are denoted by the same reference numerals, and description thereof will be omitted.
【００１４】本実施形態の半導体マイクロバルブは、上
述の図２を基本構成とし、図１に示すように、可撓部２
２において、支持部２１と弁体２３との間に、弁体２３
側の端部の方が支持部２１側の端部よりも第１のシリコ
ン基板１０の上記一面に近づくようにあらかじめ変形さ
れた変形部２２ｄが形成されている。The semiconductor microvalve of this embodiment has a basic structure shown in FIG. 2 described above, and as shown in FIG.
2, between the support portion 21 and the valve body 23, the valve body 23
A deformed portion 22d that is deformed in advance is formed such that the end on the side is closer to the one surface of the first silicon substrate 10 than the end on the support portion 21 side.
【００１５】なお、本実施形態では、可撓部２２をシリ
コンにより形成しているが、シリコンに限らず、例えば
金属膜薄膜により形成してもよく、金属薄膜により形成
した場合には、金属部分に直接通電すればよい。また、
弁体２３もシリコンに限らず金属により形成してもよ
い。In the present embodiment, the flexible portion 22 is formed of silicon. However, the flexible portion 22 is not limited to silicon. For example, the flexible portion 22 may be formed of a thin metal film. It is only necessary to energize directly. Also,
The valve body 23 is not limited to silicon and may be formed of metal.
【００１６】しかして、本実施形態では、バルブを閉じ
た状態では可撓部２２から第１のシリコン基板１０の上
記一面に近づく向きに突設された弁体２３が弁座１３に
接触することによって弁口１０ａを閉じているので、従
来のように可撓部２２’の中央部２２ａが弁体を兼ねて
いる場合に比べて、第１のシリコン基板１０の上記他面
側から上記一面側へ向かって弁口１０ａを通る流体の圧
力によって可撓部２２が変形して弁口１０ａが開くこと
を抑制することができるから、良好なシール特性を得る
ことができる。また、熱膨張を利用して可撓部２２を変
形させる駆動部が可撓部２２に設けられていることによ
り、従来のように可撓部２２’自身の熱膨張を利用して
可撓部２２’を変位させる場合に比べて可撓部２２の変
位量を大きくすることができる。なお、可撓部２２にお
いて、第１のシリコン基板１０とは反対側の面に金属薄
膜よりなるバイメタル素膜を積層し、バイメタル素膜と
可撓部２２とでバイメタルを構成すれば、可撓部２２の
変位量をより大きくすることができる。According to the present embodiment, when the valve is closed, the valve 23 protruding from the flexible portion 22 in a direction approaching the one surface of the first silicon substrate 10 comes into contact with the valve seat 13. Since the valve port 10a is closed by this, the first silicon substrate 10 has the above-mentioned one surface side as compared with the case where the central portion 22a of the flexible portion 22 'also serves as a valve body as in the related art. Since the opening of the valve port 10a due to the deformation of the flexible portion 22 due to the pressure of the fluid passing through the valve port 10a can be suppressed, good sealing characteristics can be obtained. In addition, since the flexible section 22 is provided with a drive section that deforms the flexible section 22 using thermal expansion, the flexible section 22 ′ itself uses the thermal expansion of the flexible section 22 ′ as in the related art. The displacement amount of the flexible portion 22 can be increased as compared with the case where the displacement of the flexible portion 22 'is performed. In the flexible portion 22, if a bimetal element film made of a metal thin film is laminated on the surface opposite to the first silicon substrate 10 and the bimetal element film and the flexible portion 22 constitute a bimetal, The displacement of the portion 22 can be further increased.
【００１７】さらに、本実施形態では、可撓部２２にお
いて、支持部２１と弁体２３との間に、弁体２３側の端
部の方が支持部２１側の端部よりも第１のシリコン基板
１０の上記一面に近づくようにあらかじめ変形された変
形部２２ｄが形成されているので、駆動部により可撓部
２２を変形させて弁体２３によって弁口１０ａを閉じる
場合に可撓部２２を確実に所望の向きへ変形させること
ができ、可撓部２２が変位しやすくなる。また、変形部
２２ｄが形成されていることにより可撓部２２の長さを
長くすることができ、従来よりも可撓部２２の変位量を
大きくすることができる。Further, in the present embodiment, in the flexible portion 22, between the support portion 21 and the valve body 23, the end on the valve body 23 side is the first end more than the end on the support portion 21 side. Since the deformed portion 22d, which has been deformed in advance so as to approach the one surface of the silicon substrate 10, is formed, the flexible portion 22 is deformed by the driving portion and the valve portion 23 closes the valve port 10a. Can be reliably deformed in a desired direction, and the flexible portion 22 is easily displaced. Further, the length of the flexible portion 22 can be increased by forming the deformed portion 22d, and the displacement of the flexible portion 22 can be increased as compared with the related art.
【００１８】ところで、本実施形態では、常開型のバル
ブについて説明したが、常閉型のバルブの場合には、可
撓部２２に、弁体２３側の端部の方が支持部２１側の端
部よりも第１のシリコン基板１０の上記一面から離れる
ようにあらかじめ変形された変形部を設ければよい。要
するに、変形部２２ｄは、弁体２３側の端部と支持部側
の端部とが上記厚み方向において段違いになるように該
可撓部２２を駆動部により変形させる向きへあらかじめ
変形されていればよい。In this embodiment, the normally open type valve has been described. However, in the case of the normally closed type valve, the flexible portion 22 has the end on the valve body 23 side closer to the support portion 21 side. It is sufficient to provide a deformed portion which is deformed in advance so as to be farther from the one surface of the first silicon substrate 10 than the end of the first silicon substrate. In short, the deformable portion 22d is previously deformed in a direction in which the flexible portion 22 is deformed by the driving portion such that the end on the valve body 23 side and the end on the support portion side are stepped in the thickness direction. I just need.
【００１９】なお、可撓部２２に上述のような変形部２
２ｄを設けるという技術思想は、従来構成において可撓
部２２’を平板状のダイアフラム構造とした場合あるい
はビーム構造とした場合のいずれにも適用できる。It is to be noted that the flexible portion 22 is provided with the deformed portion 2 as described above.
The technical idea of providing the 2d can be applied to both the case where the flexible portion 22 'has a plate-like diaphragm structure and the case where it has a beam structure in the conventional configuration.
【００２０】[0020]
【発明の効果】請求項１の発明は、厚み方向の一面から
他面にわたって弁口が形成され且つ上記一面において弁
口の周縁から厚み方向に突設された弁座を有する半導体
基板と、半導体基板の上記一面側に結合された支持部に
支持された可撓性を有する可撓部と、可撓部に設けられ
熱膨張を利用して可撓部を変形させる駆動部と、可撓部
から上記一面に近づく向きに突設され可撓部の撓みに応
じて上記弁座に接離する弁体とを備え、可撓部は、支持
部と弁体との間に、弁体側の端部と支持部側の端部とが
上記厚み方向において段違いになるように該可撓部を変
形させる向きへあらかじめ変形された変形部が形成され
ているので、バルブを閉じた状態では可撓部から半導体
基板の上記一面に近づく向きに突設された弁体が弁座に
接触することによって弁口を閉じているから、従来のよ
うに可撓部の中央部が弁体を兼ねている場合に比べて、
半導体基板の上記他面側から上記一面側へ向かって弁口
を通る流体の圧力によって可撓部が変形して弁口が開く
ことを抑制することができて、良好なシール特性を得る
ことができ、また、熱膨張を利用して可撓部を変形させ
る駆動部が可撓部に設けられていることにより、従来の
ように可撓部自身の熱膨張を利用して可撓部を変位させ
る場合に比べて可撓部の変位量を大きくすることができ
るという効果がある。さらに、可撓部は、支持部と弁体
との間に、弁体側の端部と支持部側の端部とが上記厚み
方向において段違いになるように該可撓部を変形させる
向きへあらかじめ変形された変形部が形成されているの
で、駆動部により可撓部を変形させる場合に可撓部を確
実に所望の向きへ変形させることができ、また、従来よ
りも可撓部の変位量を大きくすることができるという効
果がある。According to a first aspect of the present invention, there is provided a semiconductor substrate having a valve seat having a valve port formed from one surface in the thickness direction to the other surface, and having a valve seat protruding from the periphery of the valve port in the thickness direction on the one surface. A flexible portion having flexibility supported by the support portion coupled to the one surface side of the substrate, a driving portion provided on the flexible portion and using the thermal expansion to deform the flexible portion, and a flexible portion A valve body protruding toward the one surface from above and coming into contact with and separating from the valve seat in accordance with the bending of the flexible part, wherein the flexible part is provided between the support part and the valve body on the valve body side end. Since the deformed portion is formed in advance in a direction in which the flexible portion is deformed such that the portion and the end on the support portion side are stepped in the thickness direction, the flexible portion is formed in a state where the valve is closed. The valve body protruded from the semiconductor substrate toward the one surface of the semiconductor substrate comes into contact with the valve seat. Since closing the valve port Te, the central portion of the flexible portion as in the prior art as compared with the case that also serves as a valve body,
It is possible to prevent the flexible portion from being deformed by the pressure of the fluid passing through the valve port from the other surface side of the semiconductor substrate to the one surface side, thereby suppressing the valve port from opening, and obtaining good sealing characteristics. In addition, since the driving portion for deforming the flexible portion using the thermal expansion is provided in the flexible portion, the flexible portion is displaced using the thermal expansion of the flexible portion itself as in the related art. There is an effect that the amount of displacement of the flexible portion can be increased as compared with the case of making. Further, the flexible portion is pre-formed between the support portion and the valve body in such a direction that the flexible portion is deformed such that the end portion on the valve body side and the end portion on the support portion side are stepped in the thickness direction. Since the deformed deformed portion is formed, when the flexible portion is deformed by the driving portion, the flexible portion can be surely deformed in a desired direction, and the displacement amount of the flexible portion is more than the conventional case. There is an effect that can be increased.
【図１】実施形態を示し、（ａ）はバルブが開いた状態
の概略断面図、（ｂ）はバルブが閉じた状態の概略断面
図である。FIGS. 1A and 1B show an embodiment, in which FIG. 1A is a schematic sectional view in a state where a valve is opened, and FIG. 1B is a schematic sectional view in a state where a valve is closed.
【図２】同上の基本構成を示し、（ａ）はバルブが開い
た状態の概略断面図、（ｂ）はバルブが閉じた状態の概
略断面図である。FIGS. 2A and 2B show a basic configuration of the above, wherein FIG. 2A is a schematic sectional view in a state where a valve is opened, and FIG. 2B is a schematic sectional view in a state where the valve is closed.
【図３】従来例を示す概略断面図である。FIG. 3 is a schematic sectional view showing a conventional example.
【図４】同上の動作説明図である。FIG. 4 is an operation explanatory view of the above.
１０ 第１のシリコン基板 １０ａ 弁口 １１ 周部 １３ 弁座 ２０ 第２のシリコン基板 ２１ 周部 ２２ 可撓部 ２２ｄ 変形部 ２３ 弁体 DESCRIPTION OF SYMBOLS 10 1st silicon substrate 10a Valve opening 11 Peripheral part 13 Valve seat 20 Second silicon substrate 21 Peripheral part 22 Flexible part 22d Deformation part 23 Valve element
───────────────────────────────────────────────────── フロントページの続き (72)発明者 吉田 仁 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 河田 裕志 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 藤井 圭子 大阪府門真市大字門真1048番地松下電工株 式会社内 Ｆターム(参考） 3H057 AA05 BB04 BB06 BB07 CC07 DD12 FA22 FC03 FD10 HH05 3H062 AA02 AA12 BB04 BB10 CC29 EE06 FF39 HH06 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Hitoshi Yoshida 1048 Kadoma Kadoma, Osaka Prefecture Matsushita Electric Works Co., Ltd. 72) Inventor Keiko Fujii 1048 Kazuma Kadoma, Kadoma-shi, Osaka F-term in Matsushita Electric Works, Ltd.
Claims (1)
が形成され且つ上記一面において弁口の周縁から厚み方
向に突設された弁座を有する半導体基板と、半導体基板
の上記一面側に結合された支持部に支持された可撓性を
有する可撓部と、可撓部に設けられ熱膨張を利用して可
撓部を変形させる駆動部と、可撓部から上記一面に近づ
く向きに突設され可撓部の撓みに応じて上記弁座に接離
する弁体とを備え、可撓部は、支持部と弁体との間に、
弁体側の端部と支持部側の端部とが上記厚み方向におい
て段違いになるように該可撓部を変形させる向きへあら
かじめ変形された変形部が形成されてなることを特徴と
する半導体マイクロバルブ。1. A semiconductor substrate having a valve seat formed from one surface in a thickness direction to another surface and having a valve seat protruding from a peripheral edge of the valve opening in the thickness direction on the one surface, and coupled to the one surface side of the semiconductor substrate. A flexible portion supported by the supported support portion, a driving portion provided in the flexible portion to deform the flexible portion by utilizing thermal expansion, and a direction approaching the one surface from the flexible portion. A valve body that is protruded and comes into contact with and separates from the valve seat in accordance with the bending of the flexible part, and the flexible part is provided between the support part and the valve body.
A semiconductor micro-forming device, wherein a deformed portion is formed in advance in a direction for deforming the flexible portion so that the end on the valve body side and the end on the support portion side are stepped in the thickness direction. valve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6919999A JP2000266230A (en) | 1999-03-15 | 1999-03-15 | Semiconductor microvalve |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6919999A JP2000266230A (en) | 1999-03-15 | 1999-03-15 | Semiconductor microvalve |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000266230A true JP2000266230A (en) | 2000-09-26 |
Family
ID=13395831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6919999A Withdrawn JP2000266230A (en) | 1999-03-15 | 1999-03-15 | Semiconductor microvalve |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000266230A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018517879A (en) * | 2015-06-17 | 2018-07-05 | ビスタデルテク・リミテッド・ライアビリティ・カンパニーＶｉｓｔａｄｅｌｔｅｋ， Ｌｌｃ | Low hysteresis diaphragm for valves |
| US10527177B2 (en) | 2015-07-09 | 2020-01-07 | Vistadeltek, Llc | Control plate in a valve |
-
1999
- 1999-03-15 JP JP6919999A patent/JP2000266230A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018517879A (en) * | 2015-06-17 | 2018-07-05 | ビスタデルテク・リミテッド・ライアビリティ・カンパニーＶｉｓｔａｄｅｌｔｅｋ， Ｌｌｃ | Low hysteresis diaphragm for valves |
| US10527177B2 (en) | 2015-07-09 | 2020-01-07 | Vistadeltek, Llc | Control plate in a valve |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20060606 |