JP2000268995A - Plasma processing equipment - Google Patents
Plasma processing equipmentInfo
- Publication number
- JP2000268995A JP2000268995A JP11074034A JP7403499A JP2000268995A JP 2000268995 A JP2000268995 A JP 2000268995A JP 11074034 A JP11074034 A JP 11074034A JP 7403499 A JP7403499 A JP 7403499A JP 2000268995 A JP2000268995 A JP 2000268995A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- cylindrical electrode
- reaction chamber
- insulating material
- cylindrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011810 insulating material Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000002093 peripheral effect Effects 0.000 claims abstract description 7
- 238000012423 maintenance Methods 0.000 abstract description 10
- 239000007789 gas Substances 0.000 description 12
- 239000010409 thin film Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 102100033040 Carbonic anhydrase 12 Human genes 0.000 description 1
- 102100029235 Histone-lysine N-methyltransferase NSD3 Human genes 0.000 description 1
- 101000867855 Homo sapiens Carbonic anhydrase 12 Proteins 0.000 description 1
- 101100461044 Homo sapiens NSD3 gene Proteins 0.000 description 1
- 101100219325 Phaseolus vulgaris BA13 gene Proteins 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
(57)【要約】
【課題】 反応室メンテナンス時の部材の組立て、取り
外しを簡単にできるようにする。
【解決手段】 基板処理のための反応室を構成するチャ
ンバ（チャンバ本体１及びチャンバ蓋５）と、反応室内
を排気する排気機構と、反応室内に処理ガスを導入する
ガス導入機構と、チャンバと共に反応室の周壁の一部を
構成する放電用の円筒電極３と、該円筒電極３の両端に
配されてチャンバとの間を絶縁する絶縁材２、４と、円
筒電極３に高周波電力を印加する高周波電源１２と、円
筒電極３の周囲に配されたリング磁石（磁石ホルダ１１
ａ、１１ｂ及び磁石１０ａ、１０ｂ）とを備えたプラズ
マ処理装置において、前記円筒電極３と、その両端に配
された絶縁材２、４と、リング磁石とを一つのユニット
として構成し、チャンバに対し着脱自在に取り付けた。
(57) [Summary] [PROBLEMS] To easily assemble and remove members during maintenance of a reaction chamber. SOLUTION: A chamber (chamber main body 1 and chamber lid 5) constituting a reaction chamber for substrate processing, an exhaust mechanism for exhausting the reaction chamber, a gas introduction mechanism for introducing a processing gas into the reaction chamber, and the chamber A cylindrical electrode 3 for discharge constituting a part of the peripheral wall of the reaction chamber, insulating materials 2 and 4 arranged at both ends of the cylindrical electrode 3 to insulate the chamber from the chamber, and applying high-frequency power to the cylindrical electrode 3 High frequency power supply 12 and a ring magnet (magnet holder 11) arranged around cylindrical electrode 3.
a, 11b and the magnets 10a, 10b), the cylindrical electrode 3, the insulating materials 2, 4 disposed at both ends thereof, and the ring magnet are formed as one unit, and the chamber is formed in the chamber. On the other hand, it was attached detachably.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、シリコン基板やガ
ラス基板に対して薄膜を形成したり、薄膜のエッチング
を行ったりするプラズマ処理装置に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a plasma processing apparatus for forming a thin film on a silicon substrate or a glass substrate or performing etching of the thin film.
【０００２】[0002]
【従来の技術】基板に処理をするプラズマ処理装置のな
かで、磁石の磁場を利用したマグネトロン型プラズマ処
理装置がある。マグネトロン型プラズマ処理装置は、陰
極から放出された電子がドリフトしながらサイクロイド
運動を続けて周回するので長寿命となり、電離生成率が
高いので、多く使用されている容量結合型プラズマより
も高密度のプラズマが得られる。2. Description of the Related Art Among plasma processing apparatuses for processing a substrate, there is a magnetron type plasma processing apparatus using a magnetic field of a magnet. In the magnetron type plasma processing apparatus, the electrons emitted from the cathode drift and continue to go around the cycloid while drifting, so they have a long life and a high ionization generation rate. Plasma is obtained.
【０００３】この種のマグネトロン型プラズマ処理装置
として、本出願人の先の出願特願平１０−２１４０４４
号に記載のものが知られており、図２はそれと類似の従
来のマグネトロン型プラズマ処理装置の概略構成を示
す。[0003] As a magnetron type plasma processing apparatus of this kind, a prior application filed by the present applicant is disclosed in Japanese Patent Application No. 10-214044.
FIG. 2 shows a schematic configuration of a similar conventional magnetron type plasma processing apparatus.
【０００４】１は反応室を構成するチャンバ本体であ
り、その上に絶縁材２を介して円筒電極３が配設され、
円筒電極３の上に絶縁材４を介してチャンバ蓋５が配設
され、チャンバ蓋５の中央に絶縁材６を介して、原料ガ
スをシャワー状に供給するガスシャワー板機能を備えた
上部電極７が配設されている。[0004] 1 is a chamber body constituting a reaction chamber, on which a cylindrical electrode 3 is disposed via an insulating material 2,
A chamber lid 5 is provided on the cylindrical electrode 3 via an insulating material 4, and an upper electrode having a gas shower plate function of supplying a raw material gas in a shower shape at the center of the chamber lid 5 via an insulating material 6. 7 are provided.
【０００５】円筒電極３及びその上下両端の絶縁材２、
４は反応室の周壁の一部を構成している。円筒電極３の
上下両端の絶縁材２、４の外周には、リング状の磁石ホ
ルダ１１ａ、１１ｂに保持された永久磁石１０ａ、１０
ｂが配設されている。また、チャンバ本体１、円筒電極
３、絶縁材２、４、チャンバ蓋５等で構成された反応室
の内部中央には、シリコンウェーハなどの基板９を設置
するサセプタ８が配設されている。また、第１の高周波
電源１２が円筒電極３に、第２の高周波電源１３が上部
電極７につながれており、各電極３、７に高周波が供給
されるようになっている。さらに、反応室には、反応室
内を排気する排気機構（図示略）と、反応室内に処理ガ
スを導入するガス導入機構（図示略）とが接続されてい
る。[0005] The cylindrical electrode 3 and the insulating material 2 at the upper and lower ends thereof,
4 constitutes a part of the peripheral wall of the reaction chamber. Permanent magnets 10a, 10 held by ring-shaped magnet holders 11a, 11b are provided on outer peripheries of insulating materials 2, 4 at upper and lower ends of cylindrical electrode 3.
b is provided. A susceptor 8 on which a substrate 9 such as a silicon wafer is placed is disposed in the center of the inside of the reaction chamber including the chamber body 1, the cylindrical electrode 3, the insulating members 2, 4, the chamber lid 5, and the like. A first high-frequency power supply 12 is connected to the cylindrical electrode 3 and a second high-frequency power supply 13 is connected to the upper electrode 7, so that high-frequency power is supplied to each of the electrodes 3. Further, an exhaust mechanism (not shown) for exhausting the reaction chamber and a gas introducing mechanism (not shown) for introducing the processing gas into the reaction chamber are connected to the reaction chamber.
【０００６】なお、それぞれチャンバ本体１と絶縁材
２、絶縁材２と円筒電極３、円筒電極３と絶縁材４、絶
縁材４とチャンバ蓋５、チャンバ蓋５と絶縁材６、絶縁
材６と上部電極７の各間にはＯリングが配され、反応室
の気密性が保たれている。Incidentally, the chamber body 1 and the insulating material 2, the insulating material 2 and the cylindrical electrode 3, the cylindrical electrode 3 and the insulating material 4, the insulating material 4 and the chamber cover 5, the chamber cover 5 and the insulating material 6, the insulating material 6 and the like. An O-ring is provided between each of the upper electrodes 7 to keep the airtightness of the reaction chamber.
【０００７】図３は反応室の平面図で、円筒電極３と磁
石１０ａ、１０ｂの配置を示している。上側の複数個の
磁石１０ａと下側の複数個の磁石１０ｂのどちらか一方
の磁石は、Ｎ極が反応室中心方向を向くようにリング状
に配置され、他方の磁石はＳ極が反応室中心を向くよう
にリング状に配置されている。また、磁石１０ａ、１０
ｂは、円筒電極３の軸線に対して点対称に配置されてい
る。これにより、円筒電極３の周囲の上側と下側に、内
周側が異極となったリング磁石が配置された構成となっ
ている。FIG. 3 is a plan view of the reaction chamber, showing the arrangement of the cylindrical electrode 3 and the magnets 10a and 10b. Either one of the upper plurality of magnets 10a and the lower plurality of magnets 10b is arranged in a ring shape such that the N pole faces the center of the reaction chamber, and the other magnet is the S pole of the reaction chamber. They are arranged in a ring shape so as to face the center. In addition, the magnets 10a, 10
b is arranged point-symmetrically with respect to the axis of the cylindrical electrode 3. Thus, a ring magnet having a different polarity on the inner peripheral side is arranged on the upper and lower sides around the cylindrical electrode 3.
【０００８】次に基板処理の流れについて説明する。ま
ず、図示略の基板搬送手段によって、反応室内のサセプ
タ８上に基板９を搬送し、図示略の排気機構を用いて反
応室内を真空にする。次にその基板９をその処理に適し
た温度に加熱する。基板９の加熱には、例えば抵抗加熱
ヒータを埋め込んだサセプタを使用したり、赤外線ラン
プを使用したりする。あるいは、不活性ガスを使用して
プラズマを生成し、そのエネルギを利用して基板を加熱
する方法をとることもできる。Next, the flow of substrate processing will be described. First, the substrate 9 is transferred onto the susceptor 8 in the reaction chamber by a substrate transfer means (not shown), and the reaction chamber is evacuated using an exhaust mechanism (not shown). Next, the substrate 9 is heated to a temperature suitable for the processing. For heating the substrate 9, for example, a susceptor in which a resistance heater is embedded or an infrared lamp is used. Alternatively, a method in which plasma is generated using an inert gas and the substrate is heated using the generated energy may be employed.
【０００９】基板９を所定の温度に加熱したら、図示略
のガス導入機構から処理ガスをガスシャワー板機能を備
えた上部電極７に送り、反応室内に処理ガスを供給す
る。同時に、第１の高周波電源１２と第２の高周波電源
１３から高周波をそれぞれ円筒電極３及び上部電極７に
印加し、反応室内にプラズマを発生させる。その際、円
筒電極３の内面に沿って軸方向に磁力線が形成されるの
で、円筒電極３の表面近傍に高密度のリング状のプラズ
マが生成され、それが反応室内部に拡散することで、基
板９上で均一なプラズマ密度になって、基板９に均一な
薄膜を形成する。なお、ガスの供給から停止、高周波の
供給から停止までの一連の処理の間、排気機構やガス導
入機構によって、反応室内は一定の圧力に保たれてい
る。そして、処理が終わった基板９は、搬送手段を用い
て反応室外へ搬送される。When the substrate 9 is heated to a predetermined temperature, a processing gas is sent from a gas introduction mechanism (not shown) to the upper electrode 7 having a gas shower plate function, and the processing gas is supplied into the reaction chamber. At the same time, a high frequency is applied from the first high frequency power supply 12 and the second high frequency power supply 13 to the cylindrical electrode 3 and the upper electrode 7, respectively, to generate plasma in the reaction chamber. At this time, since magnetic lines of force are formed in the axial direction along the inner surface of the cylindrical electrode 3, high-density ring-shaped plasma is generated near the surface of the cylindrical electrode 3, and is diffused into the reaction chamber. The plasma density becomes uniform on the substrate 9 and a uniform thin film is formed on the substrate 9. During a series of processes from gas supply to stop and high-frequency supply to stop, the reaction chamber is kept at a constant pressure by an exhaust mechanism and a gas introduction mechanism. Then, the substrate 9 after the processing is transported out of the reaction chamber by using the transporting means.
【００１０】[0010]
【発明が解決しようとする課題】ところで、上記プラズ
マ処理装置では、反応室のメンテナンスが必須であり、
この反応室のメンテナンス時には、最初に絶縁材６と上
部電極７をチャンバ蓋５と同時に取り外し、次いで絶縁
材４と円筒電極３と絶縁材２を順に取り外して、チャン
バ内のメンテナンスを行わなければならず、メンテナン
ス後に元に戻す場合も上記の作業を逆に行わなければな
らなかった。特に再組み立て時には、円筒電極３と絶縁
材２、４をウェーハ載置箇所に対して同心を出しながら
組み立てる必要がある上、Ｏリングを嵌め込む作業など
も一々必要であるため、作業が煩雑であった。また、絶
縁材２、４は多くの場合、アルミナなどのセラミックス
が使用されるので、割れ易く、単体で取り扱う場合は、
細心の注意を払わなければならないという面倒さもあっ
た。In the above plasma processing apparatus, maintenance of the reaction chamber is essential.
At the time of maintenance of the reaction chamber, first, the insulating material 6 and the upper electrode 7 must be removed simultaneously with the chamber lid 5, and then the insulating material 4, the cylindrical electrode 3, and the insulating material 2 must be sequentially removed to perform maintenance in the chamber. In addition, the above-mentioned work had to be performed in reverse when returning to the original state after maintenance. In particular, at the time of reassembly, it is necessary to assemble the cylindrical electrode 3 and the insulating materials 2 and 4 concentrically with respect to the wafer mounting position, and it is also necessary to perform operations such as fitting an O-ring one by one. there were. In addition, since ceramics such as alumina are used for the insulating materials 2 and 4 in many cases, the insulating materials 2 and 4 are easily broken.
There was also the inconvenience of having to pay close attention.
【００１１】本発明は、上記事情を考慮し、反応室メン
テナンス時の部材の組立て、取り外しが簡単にできるプ
ラズマ処理装置を提供することを目的とする。The present invention has been made in view of the above circumstances, and has as its object to provide a plasma processing apparatus capable of easily assembling and removing members during maintenance of a reaction chamber.
【００１２】[0012]
【課題を解決するための手段】請求項１の発明は、基板
処理のための反応室を構成するチャンバと、反応室内を
排気する排気機構と、反応室内に処理ガスを導入するガ
ス導入機構と、前記チャンバと共に反応室の周壁の一部
を構成する放電用の円筒電極と、該円筒電極の両端に配
されてチャンバとの間を絶縁する絶縁材と、前記円筒電
極に高周波電力を印加する手段と、前記円筒電極の周囲
に配されたリング磁石とを備えたプラズマ処理装置にお
いて、前記円筒電極と、その両端に配された絶縁材と、
リング磁石とを一つのユニットとして構成し、チャンバ
に対し着脱自在に取り付けたことを特徴とする。According to the first aspect of the present invention, there is provided a chamber constituting a reaction chamber for processing a substrate, an exhaust mechanism for exhausting the reaction chamber, and a gas introducing mechanism for introducing a processing gas into the reaction chamber. A cylindrical electrode for discharge forming a part of a peripheral wall of the reaction chamber together with the chamber, an insulating material disposed at both ends of the cylindrical electrode to insulate between the chamber, and applying high-frequency power to the cylindrical electrode Means, in a plasma processing apparatus provided with a ring magnet disposed around the cylindrical electrode, the cylindrical electrode, an insulating material disposed at both ends thereof,
The ring magnet and the ring magnet are configured as one unit, and are detachably attached to the chamber.
【００１３】このプラズマ処理装置では、円筒電極と、
その両端に配された絶縁材と、リング磁石とを一つのユ
ニットとして構成したので、これらの部品の取り扱いが
やりやすくなり、反応室メンテナンス時の取り外し、組
み立てが簡単にできるようになる。特に、各部品間の芯
出しの手間やＯリング嵌め込みの手間がかからなくなる
ので、効率的なメンテナンスが行えるようになる。ま
た、絶縁材を単体で取り扱う必要がなくなるので、割れ
などのおそれも減少する。In this plasma processing apparatus, a cylindrical electrode,
Since the insulating material and the ring magnet arranged at both ends are configured as one unit, it is easy to handle these components, and it is easy to remove and assemble the components during maintenance of the reaction chamber. In particular, since there is no need for centering between components and O-ring fitting, efficient maintenance can be performed. In addition, since it is not necessary to handle the insulating material alone, the risk of cracks and the like is reduced.
【００１４】[0014]
【発明の実施の形態】以下、本発明の実施形態を図面に
基づいて説明する。図１は実施形態のマグネトロン型プ
ラズマ処理装置の断面図である。この装置では、チャン
バ本体１からチャンバ蓋５までの範囲が一つの円筒電極
ユニット２０として構成されている。それ以外の構成は
図２の従来例と同じであるから、同一要素に同一符号を
付して説明を省略する。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of the magnetron type plasma processing apparatus of the embodiment. In this device, the range from the chamber body 1 to the chamber lid 5 is configured as one cylindrical electrode unit 20. The other configuration is the same as that of the conventional example shown in FIG. 2, so that the same components are denoted by the same reference numerals and description thereof will be omitted.
【００１５】前記円筒電極ユニット２０には、円筒状の
ケースを構成する円筒電極ベース２１及び円筒電極蓋２
２と、円筒電極３と、該円筒電極３の上下の円筒状の絶
縁材２、４と、各絶縁材２、４の外周に配されたリング
磁石を構成する磁石ホルダ１１ａ、１１ｂ及び磁石１０
ａ、１０ｂとが含まれている。The cylindrical electrode unit 20 includes a cylindrical electrode base 21 and a cylindrical electrode cover 2 constituting a cylindrical case.
2, cylindrical electrodes 3, cylindrical insulating members 2, 4 above and below the cylindrical electrodes 3, and magnet holders 11a, 11b and magnets 10 constituting ring magnets arranged on the outer periphery of each of the insulating members 2, 4
a and 10b.
【００１６】円筒電極ベース２１は、上側のみに端壁を
有する断面Ｌ字状の円筒体として構成されており、下側
の端壁に相当する円筒電極蓋２２を円筒電極ベース２１
の下端にネジ結合することで、内面に凹所を有した断面
コ字状の円筒状ケースを構成している。そして、断面コ
字状に構成された円筒状ケースの開放内面を塞ぐように
円筒電極３と円筒状の絶縁材２、４を配置することで、
絶縁材料２、４と円筒電極３が、円筒電極ベース２１と
円筒電極蓋２２との内周端間に挟み込まれている。ま
た、絶縁材２、４の外側に配した磁石ホルダ１１ａ、１
１ｂ及び磁石１０ａ、１０ｂは、円筒電極ベース２１と
円筒電極蓋２２よりなる円筒状ケースの内面の凹所内に
収まっている。The cylindrical electrode base 21 is formed as an L-shaped cylindrical body having an end wall only on the upper side, and a cylindrical electrode lid 22 corresponding to the lower end wall is attached to the cylindrical electrode base 21.
By screwing to the lower end of the cylindrical case, a cylindrical case having a concave portion on the inner surface and having a U-shaped cross section is formed. Then, by disposing the cylindrical electrode 3 and the cylindrical insulating materials 2 and 4 so as to cover the open inner surface of the cylindrical case having a U-shaped cross section,
The insulating materials 2 and 4 and the cylindrical electrode 3 are sandwiched between inner peripheral ends of the cylindrical electrode base 21 and the cylindrical electrode lid 22. Further, the magnet holders 11a, 1
The magnet 1a and the magnets 10a and 10b are accommodated in recesses on the inner surface of a cylindrical case including a cylindrical electrode base 21 and a cylindrical electrode lid 22.
【００１７】ここで、各部材間、即ち、円筒電極ベース
２１と絶縁材２間、絶縁材２と円筒電極３間、円筒電極
３と絶縁材４間、絶縁材４と円筒電極蓋２２間は、Ｏリ
ングで気密にシールされている。Here, between each member, that is, between the cylindrical electrode base 21 and the insulating material 2, between the insulating material 2 and the cylindrical electrode 3, between the cylindrical electrode 3 and the insulating material 4, and between the insulating material 4 and the cylindrical electrode cover 22. , O-rings are hermetically sealed.
【００１８】そして、以上のように構成された円筒電極
ユニット２０が、チャンバ本体１とチャンバ蓋５間に挟
まれ、円筒電極ベース２１の内周端上面がチャンバ蓋５
の下端にＯリングを介して当接し、円筒電極蓋２２の下
面がチャンバ本体１の上端にＯリングを介して当接して
いる。この構造により、円筒電極３及び絶縁材２、４に
かかる円筒軸方向の荷重が、円筒電極ベース２１と円筒
電極蓋２２に分担して受けられるようになる。The cylindrical electrode unit 20 configured as described above is sandwiched between the chamber main body 1 and the chamber lid 5, and the inner peripheral end upper surface of the cylindrical electrode base 21 is
And the lower surface of the cylindrical electrode cover 22 is in contact with the upper end of the chamber body 1 via an O-ring. With this structure, the load in the cylindrical axial direction applied to the cylindrical electrode 3 and the insulating materials 2 and 4 can be shared and received by the cylindrical electrode base 21 and the cylindrical electrode lid 22.
【００１９】上記のように、絶縁体２、円筒電極３、絶
縁材４、磁石１０ａ、１０ｂ、磁石ホルダ１１ａ、１１
ｂを一つの円筒電極ユニット２０にまとめたことによ
り、円筒電極３廻りを一体の部品として取り扱うことが
できるようになるため、組み立てや取り外しの際の作業
が簡単にできるようになり、面倒な工数を減らすことが
できる。As described above, the insulator 2, the cylindrical electrode 3, the insulating material 4, the magnets 10a, 10b, the magnet holders 11a, 11
By combining b in one cylindrical electrode unit 20, the area around the cylindrical electrode 3 can be handled as an integral part, so that the work at the time of assembling and dismounting can be simplified, and troublesome man-hours can be obtained. Can be reduced.
【００２０】また、反応室は真空になるため、絶縁材
２、４には真空力がかかる。この真空力には、反応室中
心に向かう半径方向の力と、チャンバ蓋５にかかる上下
方向の力がある。上下方向の力は、チャンバ径がφ５０
０ｍｍだと約２０００ｋｇの荷重にもなってしまう。そ
こで、絶縁材２、４と円筒電極３の合計の寸法を、円筒
電極ベース２１と円筒電極蓋２２の円筒電極３等を挟さ
み込む部分の寸法より小さく寸法公差を設定しておく。
そうすると、チャンバ蓋５にかかる上下方向の真空力
は、円筒電極ベース２１、円筒電極蓋２２に多くかかる
ことになり、絶縁材２、４の強度に余裕をとることがで
き、肉厚を薄くすることが可能になる。Further, since the reaction chamber is evacuated, a vacuum force is applied to the insulating members 2 and 4. The vacuum force includes a radial force toward the center of the reaction chamber and a vertical force applied to the chamber lid 5. The vertical force is as follows:
If it is 0 mm, the load becomes about 2000 kg. Therefore, the total size of the insulating materials 2 and 4 and the cylindrical electrode 3 is set smaller than the size of the cylindrical electrode base 21 and the cylindrical electrode lid 22 that sandwich the cylindrical electrode 3 and the like.
Then, a large amount of vertical vacuum force applied to the chamber lid 5 is applied to the cylindrical electrode base 21 and the cylindrical electrode lid 22, so that the strength of the insulating materials 2 and 4 can be secured and the thickness can be reduced. It becomes possible.
【００２１】このことは、円筒電極３の内面に沿って強
い磁場を発生させる上で重要な意味を持つ。即ち、絶縁
材２、４の肉厚が薄くなると、それだけ磁石１０ａ、磁
石１０ｂが円筒電極３の内面に近づくので、強い磁場を
作ることができ、高密度のプラズマを発生させることが
できる。また、所定の磁場を発生させるために、小さな
磁石を利用するだけでよくなるため、装置の小型化及び
低コスト化が図れる。従って、それらの利点を得る上
で、円筒電極ベース２１や円筒電極蓋２２を設ける重要
性が増す。This is important for generating a strong magnetic field along the inner surface of the cylindrical electrode 3. That is, as the thickness of the insulating materials 2 and 4 becomes thinner, the magnets 10a and 10b move closer to the inner surface of the cylindrical electrode 3, so that a strong magnetic field can be generated and high-density plasma can be generated. In addition, since it is sufficient to use a small magnet to generate a predetermined magnetic field, the size and cost of the device can be reduced. Therefore, to obtain these advantages, the importance of providing the cylindrical electrode base 21 and the cylindrical electrode lid 22 increases.
【００２２】また、通常、高周波を使用する場合は、人
体に影響の無いよう高周波が装置外に漏れないようにカ
バーをするが、上記の装置では、円筒電極ベース２１及
び円筒電極蓋２２がそのカバーの役目を果たすので、新
たにカバーを設ける必要がなくなるという利点も得られ
る。Normally, when a high frequency is used, a cover is provided to prevent the high frequency from leaking out of the apparatus so as not to affect the human body. In the above-mentioned apparatus, however, the cylindrical electrode base 21 and the cylindrical electrode lid 22 are provided with the cover. Since the cover serves as a cover, there is an advantage that it is not necessary to newly provide a cover.
【００２３】[0023]
【発明の効果】以上説明したように、本発明によれば、
円筒電極と、その両端に配された絶縁材と、リング磁石
とを一つのユニットとして構成したので、これらの部品
の取り扱いがやりやすくなり、反応室メンテナンス時の
取り外しや組み立てが簡単にできるようになる。特に、
ユニット内の各部品間の芯出しの手間やＯリング嵌め込
みの手間がかからなくなるので、メンテナンスの効率ア
ップが図れる。また、絶縁材を単体で取り扱う必要がな
くなるので、絶縁材の割れなどのおそれも減少する。As described above, according to the present invention,
Since the cylindrical electrode, the insulating material arranged at both ends of the cylindrical electrode, and the ring magnet are configured as a single unit, it is easy to handle these parts, and it is easy to remove and assemble during maintenance of the reaction chamber. Become. In particular,
Since the labor of centering between the components in the unit and the labor of fitting the O-ring are eliminated, maintenance efficiency can be improved. In addition, since it is not necessary to handle the insulating material alone, the risk of cracking of the insulating material is reduced.
【図１】本発明の実施形態のマグネトロン型プラズマ処
理装置の概略構成を示す断面図である。FIG. 1 is a sectional view showing a schematic configuration of a magnetron type plasma processing apparatus according to an embodiment of the present invention.
【図２】従来のマグネトロン型プラズマ処理装置の概略
構成を示す断面図である。FIG. 2 is a sectional view showing a schematic configuration of a conventional magnetron type plasma processing apparatus.
【図３】図２の要部水平断面図である。FIG. 3 is a horizontal sectional view of a main part of FIG. 2;
１ チャンバ本体（チャンバ） ２，４ 絶縁材 ３ 円筒電極 ５ チャンバ蓋（チャンバ） １２ 高周波電源 １０ａ，１０ｂ 磁石 ２０ 円筒電極ユニット DESCRIPTION OF SYMBOLS 1 Chamber main body (chamber) 2, 4 Insulating material 3 Cylindrical electrode 5 Chamber lid (chamber) 12 High frequency power supply 10a, 10b Magnet 20 Cylindrical electrode unit
フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 21/3065 Ｈ０１Ｌ 21/31 Ｃ 21/31 21/302 Ｂ Ｆターム(参考） 4K029 AA06 AA09 AA24 DC28 DC35 DC43 4K030 CA04 CA06 CA12 FA03 KA16 KA34 4K057 DA19 DD01 DM06 DM39 DM40 DN01 5F004 AA16 BA13 BB08 BB26 BD03 BD04 5F045 AA08 DP03 EH04 EH16 Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat II (reference) H01L 21/3065 H01L 21/31 C 21/31 21/302 B F term (reference) 4K029 AA06 AA09 AA24 DC28 DC35 DC43 4K030 CA04 CA06 CA12 FA03 KA16 KA34 4K057 DA19 DD01 DM06 DM39 DM40 DN01 5F004 AA16 BA13 BB08 BB26 BD03 BD04 5F045 AA08 DP03 EH04 EH16
Claims (1)
ンバと、反応室内を排気する排気機構と、反応室内に処
理ガスを導入するガス導入機構と、前記チャンバと共に
反応室の周壁の一部を構成する放電用の円筒電極と、該
円筒電極の両端に配されてチャンバとの間を絶縁する絶
縁材と、前記円筒電極に高周波電力を印加する手段と、
前記円筒電極の周囲に配されたリング磁石とを備えたプ
ラズマ処理装置において、 前記円筒電極と、その両端に配された絶縁材と、リング
磁石とを一つのユニットとして構成し、チャンバに対し
着脱自在に取り付けたことを特徴とするプラズマ処理装
置。1. A chamber constituting a reaction chamber for processing a substrate, an exhaust mechanism for exhausting the reaction chamber, a gas introduction mechanism for introducing a processing gas into the reaction chamber, and a part of the peripheral wall of the reaction chamber together with the chamber. A cylindrical electrode for discharge, comprising: an insulating material arranged at both ends of the cylindrical electrode to insulate between the chamber; and a means for applying high-frequency power to the cylindrical electrode,
In a plasma processing apparatus provided with a ring magnet disposed around the cylindrical electrode, the cylindrical electrode, an insulating material disposed at both ends thereof, and a ring magnet are configured as one unit, and are attached to and detached from a chamber. A plasma processing apparatus characterized by being freely mounted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11074034A JP2000268995A (en) | 1999-03-18 | 1999-03-18 | Plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11074034A JP2000268995A (en) | 1999-03-18 | 1999-03-18 | Plasma processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000268995A true JP2000268995A (en) | 2000-09-29 |
Family
ID=13535475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11074034A Pending JP2000268995A (en) | 1999-03-18 | 1999-03-18 | Plasma processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000268995A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7294224B2 (en) * | 2003-12-01 | 2007-11-13 | Applied Materials, Inc. | Magnet assembly for plasma containment |
| WO2009113213A1 (en) | 2008-03-14 | 2009-09-17 | 住友精密工業株式会社 | Plasma processing apparatus |
| US8262848B2 (en) * | 2004-04-08 | 2012-09-11 | Tokyo Electron Limited | Plasma processing apparatus and method |
| KR101269971B1 (en) * | 2006-10-09 | 2013-05-31 | 엘아이지에이디피 주식회사 | Apparatus for processing a substrate |
| US20140087489A1 (en) * | 2012-09-26 | 2014-03-27 | Applied Materials, Inc. | Bottom and side plasma tuning having closed loop control |
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| US11587764B2 (en) * | 2018-11-05 | 2023-02-21 | Applied Materials, Inc. | Magnetic housing systems |
| JP2023547839A (en) * | 2020-10-21 | 2023-11-14 | アプライド マテリアルズ インコーポレイテッド | Magnet holding structure for plasma processing applications |
| KR102870044B1 (en) * | 2024-10-22 | 2025-10-21 | 주식회사 플라즈맵 | Plasma processing storage |
| TWI921788B (en) | 2018-11-05 | 2026-04-11 | 美商應用材料股份有限公司 | Magnetic housing systems |
-
1999
- 1999-03-18 JP JP11074034A patent/JP2000268995A/en active Pending
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7294224B2 (en) * | 2003-12-01 | 2007-11-13 | Applied Materials, Inc. | Magnet assembly for plasma containment |
| US8262848B2 (en) * | 2004-04-08 | 2012-09-11 | Tokyo Electron Limited | Plasma processing apparatus and method |
| KR101269971B1 (en) * | 2006-10-09 | 2013-05-31 | 엘아이지에이디피 주식회사 | Apparatus for processing a substrate |
| WO2009113213A1 (en) | 2008-03-14 | 2009-09-17 | 住友精密工業株式会社 | Plasma processing apparatus |
| TWI426829B (en) * | 2008-03-14 | 2014-02-11 | Spp科技股份有限公司 | Plasma processing device (2) |
| US8771461B2 (en) | 2008-03-14 | 2014-07-08 | Spp Technologies Co., Ltd. | Plasma processing apparatus |
| US20140087489A1 (en) * | 2012-09-26 | 2014-03-27 | Applied Materials, Inc. | Bottom and side plasma tuning having closed loop control |
| US10128118B2 (en) * | 2012-09-26 | 2018-11-13 | Applied Materials, Inc. | Bottom and side plasma tuning having closed loop control |
| JP6271822B1 (en) * | 2016-06-29 | 2018-01-31 | 株式会社アルバック | Film forming unit for sputtering equipment |
| WO2018003615A1 (en) * | 2016-06-29 | 2018-01-04 | 株式会社アルバック | Sputtering apparatus film formation unit |
| CN109415802A (en) * | 2016-06-29 | 2019-03-01 | 株式会社爱发科 | Film forming unit for sputtering equipment |
| US10770275B2 (en) | 2016-06-29 | 2020-09-08 | Ulvac, Inc. | Film forming unit for sputtering apparatus |
| US11587764B2 (en) * | 2018-11-05 | 2023-02-21 | Applied Materials, Inc. | Magnetic housing systems |
| US12555741B2 (en) | 2018-11-05 | 2026-02-17 | Applied Materials, Inc. | Magnetic housing systems |
| TWI921788B (en) | 2018-11-05 | 2026-04-11 | 美商應用材料股份有限公司 | Magnetic housing systems |
| JP2023547839A (en) * | 2020-10-21 | 2023-11-14 | アプライド マテリアルズ インコーポレイテッド | Magnet holding structure for plasma processing applications |
| KR102870044B1 (en) * | 2024-10-22 | 2025-10-21 | 주식회사 플라즈맵 | Plasma processing storage |
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