JP2000306219A - Magnetoresistance effect film and its production - Google Patents
Magnetoresistance effect film and its productionInfo
- Publication number
- JP2000306219A JP2000306219A JP11116094A JP11609499A JP2000306219A JP 2000306219 A JP2000306219 A JP 2000306219A JP 11116094 A JP11116094 A JP 11116094A JP 11609499 A JP11609499 A JP 11609499A JP 2000306219 A JP2000306219 A JP 2000306219A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic
- antiferromagnetic
- magnetic film
- lattice constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 title claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000010408 film Substances 0.000 claims abstract description 246
- 230000005291 magnetic effect Effects 0.000 claims abstract description 155
- 230000005290 antiferromagnetic effect Effects 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 229910003321 CoFe Inorganic materials 0.000 claims description 9
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 230000008878 coupling Effects 0.000 abstract description 20
- 238000010168 coupling process Methods 0.000 abstract description 20
- 238000005859 coupling reaction Methods 0.000 abstract description 20
- 230000001681 protective effect Effects 0.000 abstract description 10
- 239000011521 glass Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 230000005415 magnetization Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- -1 crystallinity Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、磁気ディスク装
置、あるいはＶＴＲ等の磁気テープ装置用の再生専用ヘ
ッドとして用いられる磁気抵抗効果膜に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive film used as a read-only head for a magnetic disk device or a magnetic tape device such as a VTR.
【０００２】[0002]
【従来の技術】スピンバルブ型磁気抵抗効果型ヘッド
（以下ＳＶＭＲヘッド）は、従来の磁気抵抗効果型磁気
ヘッド（以下ＭＲヘッド）に比べて高感度、高出力であ
り、盛んに開発が行われている。ＳＶＧＭＲヘッドの素
子部分は、図２に示すような断面構造になっている。図
２に示すようにＳＶＧＭＲヘッドの素子部分（膜）は、
下から順に、基板１１、下地膜１２、第１の磁性膜１
３、非磁性中間膜（金属薄膜）１４、第２の磁性膜１
５、反強磁性膜１７、及び保護膜１８がそれぞれ積層さ
れて構成されている。すなわち、非磁性中間膜（金属薄
膜）１４で分離された第１の磁性膜１３、第２の磁性膜
１５の２つの磁性薄膜から構成されているのが特徴であ
る。2. Description of the Related Art Spin valve type magnetoresistive heads (hereinafter referred to as "SVMR heads") have higher sensitivity and higher output than conventional magnetoresistive effect type magnetic heads (hereinafter referred to as "MR heads"), and are being actively developed. ing. The element portion of the SVGMR head has a sectional structure as shown in FIG. As shown in FIG. 2, the element portion (film) of the SVGMR head is
Substrate 11, base film 12, first magnetic film 1 in order from the bottom
3, non-magnetic intermediate film (metal thin film) 14, second magnetic film 1
5, an antiferromagnetic film 17 and a protective film 18 are respectively laminated. That is, it is characterized in that it is composed of two magnetic thin films of a first magnetic film 13 and a second magnetic film 15 separated by a non-magnetic intermediate film (metal thin film) 14.
【０００３】そして、この２つの磁性薄膜１３、１５の
磁化方向は互いに直交するように設定されている。第１
の磁性膜（以下自由膜）１３はトラック幅方向に異方性
を付与され、記録媒体からの信号磁界で磁化方向が回転
するようになつている。一方、第２の磁性膜（以下固定
膜）１５は素子高さ方向、すなわち第１の磁性膜１３と
は直交方向に磁化が固定され、記録媒体（図示せず）か
らの信号磁界に対しては動かないようになつている。The magnetization directions of the two magnetic thin films 13 and 15 are set so as to be orthogonal to each other. First
The magnetic film (hereinafter referred to as a free film) 13 is provided with anisotropy in the track width direction so that the magnetization direction is rotated by a signal magnetic field from the recording medium. On the other hand, the magnetization of the second magnetic film (hereinafter, fixed film) 15 is fixed in the element height direction, that is, in the direction orthogonal to the first magnetic film 13, so that the second magnetic film 15 is not affected by a signal magnetic field from a recording medium (not shown). Is immobile.
【０００４】この状態を実現するために自由膜１３とし
て軟磁気特性の良い、いわゆるソフトな磁性膜を用い、
記録媒体からの信号磁界に対して回転しやすくするよう
にしている。一方、固定膜１５の方は隣接して反強磁性
膜１７を設け、反強磁性膜１７との交換結合作用による
一方向異方性を利用して磁化方向を固定させ、記録媒体
からの信号磁界に対して動きにくいようにしている。In order to realize this state, a so-called soft magnetic film having good soft magnetic properties is used as the free film 13,
It is made easy to rotate with respect to the signal magnetic field from the recording medium. On the other hand, an antiferromagnetic film 17 is provided adjacent to the fixed film 15, and the magnetization direction is fixed by using one-way anisotropy due to exchange coupling with the antiferromagnetic film 17, so that a signal from the recording medium is output. It is made difficult to move against a magnetic field.
【０００５】このような状態が実現されていれば、記録
媒体からの信号磁界に対して自由膜１３の磁化のみが回
転するので固定膜１５の磁化との間に相対的角度変化が
起こり、膜全体としての電気抵抗は両者の間の角度の余
弦（ｃｏｓ）の関数として変化する。この抵抗変化を利
用することにより、磁気テープより再生信号を得ること
が可能となる。If such a state is realized, only the magnetization of the free film 13 rotates with respect to the signal magnetic field from the recording medium, so that a relative angular change occurs between the magnetization of the fixed film 15 and the film. The overall electrical resistance varies as a function of the cosine of the angle between them. By utilizing this resistance change, it is possible to obtain a reproduction signal from a magnetic tape.
【０００６】[0006]
【発明が解決しようとする課題】上記の動作が安定して
起こるようにするためには、変化しない固定膜の磁化が
しっかり固定されていること、すなわち、固定膜と反強
磁性膜との間の交換結合磁界が出来るだけ大きいことが
必要である。実使用時のセンス電流による温度上昇等に
より交換結合磁界が減少することが知られており、それ
らを考慮すると室温での交換結合磁界は少なくとも２０
０〜２５０エルステッド以上の値が必要とされる。In order for the above operation to occur stably, the magnetization of the fixed film that does not change must be firmly fixed, that is, the gap between the fixed film and the antiferromagnetic film must be fixed. It is necessary that the exchange coupling magnetic field be as large as possible. It is known that the exchange coupling magnetic field decreases due to a rise in temperature due to a sense current in actual use.
Values of 0 to 250 Oe or more are required.
【０００７】また、ヘツド製造プロセスには２５０度
（℃）程度の熱処理があるため耐熱性の確保も課題にな
っている。これらの特性を満たすためには従来より第
１、第２の磁性膜や反強磁性膜の材料、結晶性、成膜法
等の様々な検討が行われている。Further, since the head manufacturing process involves a heat treatment at about 250 ° C. (° C.), securing heat resistance is also an issue. In order to satisfy these characteristics, various studies have been made on the materials, crystallinity, film forming methods, and the like of the first and second magnetic films and antiferromagnetic films.
【０００８】特に結晶性が支配要因となり、通常はこの
結晶性は良ければ良いほど望ましい場合が多いが、第２
の磁性膜と反強磁性膜の結晶格子定数に差がある場合に
は、両者の結晶性が良すぎると格子ミスフィットが際だ
ってしまい、かえって、交換結合磁界が低下してしまう
問題が発生する場合があり、最適範囲を見い出すのが困
難であった。In particular, the crystallinity is the dominant factor, and in general, the better the crystallinity, the more desirable it is often.
In the case where there is a difference between the crystal lattice constants of the magnetic film and the antiferromagnetic film, if the crystallinity of both is too good, the lattice misfit will be outstanding, and on the contrary, the exchange coupling magnetic field will decrease. In some cases, it was difficult to find the optimal range.
【０００９】[0009]
【課題を解決するための手段】本発明は上記課題を解決
するために、請求項１の発明は、基板上に下地膜、第１
の磁性膜、非磁性中間膜、第２の磁性膜、反強磁性膜の
順に積膜して構成される磁気抵抗効果膜において、前記
第２の磁性膜と反強磁性膜との間に、前記第２の磁性膜
よりも格子定数が前記反強磁性膜により近い薄膜である
第３の磁性膜を設けるようにし、請求項２の発明は、前
記請求項１に記載の磁気抵抗効果膜において、前記第１
の磁性膜、第２の磁性膜はＣｏＦｅ合金薄膜で形成さ
れ、前記薄膜である第３の磁性膜はＮｉＦｅ合金薄膜で
形成され、前記反強磁性膜はＩｒＭｎ合金薄膜で形成さ
れるようにし、請求項３の発明は、基板上に下地膜、第
１の磁性膜、非磁性中間膜、第２の磁性膜、反強磁性膜
の順にそれぞれの膜を形成して積膜する工程を有する磁
気抵抗効果膜の製造方法において、前記第２の磁性膜を
形成する工程と前記反強磁性膜を形成する工程との間
に、前記第２の磁性膜よりも格子定数が前記反強磁性膜
により近い薄膜である第３の磁性膜を形成する工程を有
するようにした。According to the present invention, in order to solve the above-mentioned problems, an invention according to claim 1 is a method in which a base film, a first film and a first film are formed on a substrate.
A magnetic film, a non-magnetic intermediate film, a second magnetic film, and an anti-ferromagnetic film, which are stacked in this order, wherein between the second magnetic film and the anti-ferromagnetic film, A third magnetic film, which is a thin film whose lattice constant is closer to the antiferromagnetic film than the second magnetic film, is provided. , The first
The second magnetic film is formed of a CoFe alloy thin film, the third magnetic film, which is the thin film, is formed of a NiFe alloy thin film, and the antiferromagnetic film is formed of an IrMn alloy thin film. According to a third aspect of the present invention, there is provided a magnetic method comprising the steps of forming a base film, a first magnetic film, a non-magnetic intermediate film, a second magnetic film, and an antiferromagnetic film on a substrate in this order and stacking them. In the method of manufacturing a resistance effect film, between the step of forming the second magnetic film and the step of forming the antiferromagnetic film, the lattice constant of the antiferromagnetic film is larger than that of the second magnetic film. The method has a step of forming a third magnetic film which is a close thin film.
【００１０】（ 作 用 ）第２の磁性膜と反強磁性膜の
間に第３の磁性膜を薄く設けることにより、前記第３の
磁性膜と反強磁性膜の間で強い交換結合が発生し、その
交換結合磁界は前記第２の磁性膜にも及び、その結果、
前記第２の磁性膜と第３の磁性膜とが全体として強い交
換結合で反強磁性膜と結ばれることになる。これは第２
の磁性膜と反強磁性膜との間の格子定数ミスフィットを
緩和させることと等価になる。(Operation) By providing a thin third magnetic film between the second magnetic film and the antiferromagnetic film, strong exchange coupling occurs between the third magnetic film and the antiferromagnetic film. However, the exchange coupling magnetic field also extends to the second magnetic film, and as a result,
The second magnetic film and the third magnetic film are connected to the antiferromagnetic film by strong exchange coupling as a whole. This is the second
This is equivalent to alleviating the lattice constant misfit between the magnetic film and the antiferromagnetic film.
【００１１】[0011]
【発明の実施の形態】本発明のＭＲ膜の一実施例につい
て図と共に以下に説明する。図１は本発明によるＭＲ膜
の一実施例の断面図である。図１に示すように本発明に
よるＭＲ膜は、下から順に、下地膜２、第１の磁性膜
３、非磁性中間膜４、第２の磁性膜５、薄膜である第３
の磁性膜６、反強磁性膜７、及び保護膜８がそれぞれ積
層されて構成される。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the MR film of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of an embodiment of an MR film according to the present invention. As shown in FIG. 1, the MR film according to the present invention comprises, in order from the bottom, a base film 2, a first magnetic film 3, a non-magnetic intermediate film 4, a second magnetic film 5, and a third thin film.
The magnetic film 6, the antiferromagnetic film 7, and the protective film 8 are respectively laminated.
【００１２】本発明では、第２の磁性膜５と反強磁性膜
７の結晶格子定数の差が大きい場合でもその差をある程
度緩和して大きな交換結合磁界を得ようとするものであ
る。基板１上に下地膜２、第１の磁性膜３、非磁性中間
膜４、第２の磁性膜５、第３の磁性膜６、反強磁性膜
７、保護膜８の順に積層する各工程によりスピンバルブ
（ＳＶ）膜を作製する。In the present invention, even if the difference between the crystal lattice constants of the second magnetic film 5 and the antiferromagnetic film 7 is large, the difference is relaxed to some extent to obtain a large exchange coupling magnetic field. Each step of laminating a base film 2, a first magnetic film 3, a non-magnetic intermediate film 4, a second magnetic film 5, a third magnetic film 6, an antiferromagnetic film 7, and a protective film 8 in this order on the substrate 1. To produce a spin valve (SV) film.
【００１３】積層する各工程に第２の磁性膜５と反強磁
性膜７との間に第２の磁性膜５よりも格子定数が反強磁
性膜７により近い第３の磁性膜６を薄く形成する工程を
挿入する。その後に、第３の磁性膜６の上に反強磁性膜
７、保護膜８を形成する工程を設ける。In each laminating step, the third magnetic film 6 whose lattice constant is closer to the antiferromagnetic film 7 than the second magnetic film 5 is thinned between the second magnetic film 5 and the antiferromagnetic film 7. The step of forming is inserted. Thereafter, a step of forming an antiferromagnetic film 7 and a protective film 8 on the third magnetic film 6 is provided.
【００１４】（実施例１）ガラス基板１上にAl2O3を成
膜した後、以下の構成の積膜膜を作製し、磁気特性と結
晶構造とを調べた。成膜はすべてスパッタ法で行い、成
膜中にはガラス基板１と平行方向に１００エルステッド
の磁界をかけて行った。(Example 1) After depositing Al2O3 on a glass substrate 1, a laminated film having the following structure was prepared, and its magnetic characteristics and crystal structure were examined. All film formation was performed by a sputtering method, and a magnetic field of 100 Oe was applied in a direction parallel to the glass substrate 1 during the film formation.
【００１５】第１の磁性膜３、第２の磁性膜５のＣｏＦ
ｅはＣｏ９０、Ｆｅ１０ａｔ%のターゲットを、薄くし
た第３の磁性膜６のＮｉＦｅはＮｉ８０、Ｆｅ２０ａｔ
%のターゲットを、そして反強磁性膜７のＩｒＭｎはＩ
ｒ２２、Ｍｎ７８ａｔ%のターゲットをそれぞれ用い
た。The CoF of the first magnetic film 3 and the second magnetic film 5
e is a target of Co90 and Fe10 at%, and NiFe of the thinned third magnetic film 6 is Ni80, Fe20 at%.
% Of the target and IrMn of the antiferromagnetic film 7 is I
r22 and Mn of 78 at% were used as targets.
【００１６】ガラス基板１上に、下地膜２のＴａ（５ｎ
ｍ）／第１の磁性膜３のＣｏＦｅ（６ｎｍ）／非磁性中
間膜４のＣｕ（２．５ｎｍ）／第２の磁性膜５のＣｏＦ
ｅ（２．５ｎｍ）／第３の磁性膜６のＮｉＦｅ（０．５
ｎｍ）／反強磁性膜７のＩｒＭｎ（８ｎｍ）／保護膜８
のＴａ（５ｎｍ）と連続して成膜する。On the glass substrate 1, a Ta (5n)
m) / CoFe (6 nm) of the first magnetic film 3 / Cu (2.5 nm) of the nonmagnetic intermediate film 4 / CoF of the second magnetic film 5
e (2.5 nm) / NiFe (0.5 nm) of the third magnetic film 6
nm) / IrMn of antiferromagnetic film 7 (8 nm) / protective film 8
Is continuously formed with Ta (5 nm).
【００１７】この実験で使用の第２の磁性膜５のＣｏＦ
ｅ（２．５ｎｍ）の格子定数は２．０４６７オングスト
ローム、第３の磁性膜６のＮｉＦｅ（０．５ｎｍ）の格
子定数は２．０６００オングストローム、反強磁性膜７
のＩｒＭｎ（８ｎｍ）の格子定数は２．１８１オングス
トロームである。よって、前記第２の磁性膜５よりも格
子定数が前記反強磁性膜７により近い薄膜である第３の
磁性膜６を設けて実験を行なった。The CoF of the second magnetic film 5 used in this experiment
The lattice constant of e (2.5 nm) is 2.0467 Å, the lattice constant of NiFe (0.5 nm) of the third magnetic film 6 is 2.0600 Å, and the antiferromagnetic film 7
Has a lattice constant of 2.181 angstroms. Therefore, an experiment was conducted by providing a third magnetic film 6 which is a thin film having a lattice constant closer to the antiferromagnetic film 7 than the second magnetic film 5.
【００１８】（実施例２）ガラス基板１上にAl2O3を成
膜した後、以下の構成の積膜膜を作製し、磁気特性と結
晶構造を調べた。成膜はすべてスパッタ法で行い、成膜
中には基板１と平行方向に１００エルステッドの磁界を
かけている。(Example 2) After forming Al2O3 on a glass substrate 1, a laminated film having the following structure was prepared, and its magnetic characteristics and crystal structure were examined. All film formation is performed by a sputtering method, and a magnetic field of 100 Oe is applied in a direction parallel to the substrate 1 during the film formation.
【００１９】第１の磁性膜３、第２の磁性膜５のＣｏＦ
ｅはＣｏ９０、Ｆｅ１０ａｔ%のターゲットを、薄くし
た第３の磁性膜６のＮｉＦｅはＮｉ８０、Ｆｅ２０ａｔ
%のターゲットを、そして反強磁性膜７のＩｒＭｎはＩ
ｒ２２、Ｍｎ７８ａｔ%のターゲットを用いた。CoF of the first magnetic film 3 and the second magnetic film 5
e is a target of Co90 and Fe10 at%, and NiFe of the thinned third magnetic film 6 is Ni80, Fe20 at%.
% Of the target and IrMn of the antiferromagnetic film 7 is I
A target of r22 and Mn of 78 at% was used.
【００２０】ガラス基板１上に、下地膜２のＴａ（５ｎ
ｍ）／第１の磁性膜３の［Ｃｕ（０．８ｎｍ）／ＣｏＦ
ｅ（１．５ｎｍ）］×３ ／非磁性中間膜４のＣｕ
（２．５ｎｍ）／第２の磁性膜５のＣｏＦｅ（２．５ｎ
ｍ）／第３の磁性膜６のＮｉＦｅ（０．５ｎｍ）／反強
磁性膜７のＩｒＭｎ（８ｎｍ）／保護膜８のＴａ（５ｎ
ｍ）と連続して成膜する。この実験で使用の、第２の磁
性膜５のＣｏＦｅ（２．５ｎｍ）の格子定数は２．０４
６７オングストローム、第３の磁性膜６のＮｉＦｅ
（０．５ｎｍ）の格子定数は２．０６００オングストロ
ーム、反強磁性膜７のＩｒＭｎ（８ｎｍ）の格子定数は
２．１８１オングストロームである。よって、前記第２
の磁性膜５よりも格子定数が前記反強磁性膜７により近
い薄膜である第３の磁性膜６を設けて実験を行なった。On a glass substrate 1, a Ta (5 n
m) / [Cu (0.8 nm) / CoF of the first magnetic film 3]
e (1.5 nm)] × 3 / Cu of non-magnetic intermediate film 4
(2.5 nm) / CoFe (2.5 n) of the second magnetic film 5
m) / NiFe of the third magnetic film 6 (0.5 nm) / IrMn of the antiferromagnetic film 7 (8 nm) / Ta of the protective film 8 (5n)
m). The lattice constant of CoFe (2.5 nm) of the second magnetic film 5 used in this experiment is 2.04.
67 Å, NiFe of the third magnetic film 6
The lattice constant of (0.5 nm) is 2.0600 Å, and the lattice constant of IrMn (8 nm) of the antiferromagnetic film 7 is 2.181 Å. Therefore, the second
An experiment was conducted by providing a third magnetic film 6, which is a thin film having a lattice constant closer to the antiferromagnetic film 7 than the magnetic film 5 described above.
【００２１】（比較例１）ガラス基板１上にAl2O3を成
膜した後、以下の構成の積膜膜を作製し、磁気特性と結
晶構造を調べた。成膜はすべてスパッタ法で行い、成膜
中にはガラス基板１と平行方向に１００エルステッドの
磁界をかけている。(Comparative Example 1) After depositing Al2O3 on a glass substrate 1, a laminated film having the following structure was prepared, and its magnetic characteristics and crystal structure were examined. All film formation is performed by a sputtering method, and a magnetic field of 100 Oe is applied in a direction parallel to the glass substrate 1 during the film formation.
【００２２】ガラス基板１１上に、下地膜１２のＴａ
（５ｎｍ）／第１の磁性膜１３のＣｏＦｅ（６ｎｍ）／
非磁性中間膜１４のＣｕ（２．５ｎｍ）／第２の磁性膜
１５のＣｏＦｅ（３ｎｍ）／反強磁性膜１７のＩｒＭｎ
（８ｎｍ）／保護膜１８のＴａ（５ｎｍ）と連続して成
膜する。On a glass substrate 11, a Ta film
(5 nm) / CoFe of first magnetic film 13 (6 nm) /
Cu (2.5 nm) of the nonmagnetic intermediate film 14 / CoFe (3 nm) of the second magnetic film 15 / IrMn of the antiferromagnetic film 17
(8 nm) / Ta (5 nm) of the protective film 18 is formed continuously.
【００２３】（比較例２）ガラス基板１上にAl2O3を成
膜した後、以下の構成の積膜膜を作製し、磁気特性と結
晶構造を調べた。成膜はすべてスパッタ法で行い、成膜
中には基板１と平行方向に１００エルステッドの磁界を
かけている。(Comparative Example 2) After Al2O3 was formed on the glass substrate 1, a laminated film having the following structure was prepared, and its magnetic characteristics and crystal structure were examined. All film formation is performed by a sputtering method, and a magnetic field of 100 Oe is applied in a direction parallel to the substrate 1 during the film formation.
【００２４】ガラス基板１１上に、下地膜１２のＴａ
（５ｎｍ）／第１の磁性膜１３の［Ｃｕ（０．８ｎｍ）
／ＣｏＦｅ（１．５ｎｍ）］×３／非磁性中間膜１４の
Ｃｕ（２．５ｎｍ）／第２の磁性膜１５のＣｏＦｅ（３
ｎｍ）／反強磁性膜１７のＩｒＭｎ（８ｎｍ）／保護膜
１８のＴａ（５ｎｍ）と連続して成膜する。On the glass substrate 11, a Ta film
(5 nm) / [Cu (0.8 nm) of the first magnetic film 13]
/ CoFe (1.5 nm)] × 3 / Cu (2.5 nm) of the nonmagnetic intermediate film 14 / CoFe (3 nm) of the second magnetic film 15
nm) / IrMn of the antiferromagnetic film 17 (8 nm) / Ta of the protective film 18 (5 nm).
【００２５】下記の表１の「膜の諸特性」に、実施例
１、実施例２と比較例１、比較例２の種類の交換結合磁
界（エルステッド）、抵抗変化率（パーセント）の測定
データをそれぞれ示す。The "Characteristics of the film" in Table 1 below shows the measured data of the exchange coupling magnetic field (Oersted) and the rate of change in resistance (percent) of Examples 1, 2 and Comparative Examples 1 and 2. Are respectively shown.
【００２６】[0026]
【表１】 [Table 1]
【００２７】本発明の実施例１、実施例２は、交換結合
磁界（エルステッド）については比較例１、比較例２と
比較して略５割増しと大きく、良好な特性であることが
分かる。抵抗変化率（パーセント）は、比較例１、比較
例２に対して、やや落ちるが、これは実用上問題ないレ
ベルである。これに対して、比較例１、２は大きな抵抗
変化率を示すが、交換結合磁界は小さく、実用的でな
い。In the first and second embodiments of the present invention, the exchange coupling magnetic field (Oersted) is about 50% larger than that of the first and second comparative examples, indicating good characteristics. The resistance change rate (percent) is slightly lower than Comparative Example 1 and Comparative Example 2, but this is a level that does not cause any problem in practical use. On the other hand, Comparative Examples 1 and 2 show a large rate of change in resistance, but have a small exchange coupling magnetic field and are not practical.
【００２８】本発明の磁気抵抗効果膜（スピンバルブ
膜）は、図１に示されるように、第２の磁性膜５と反強
磁性膜７の間に前記第２の磁性膜よりも格子定数が前記
反強磁性膜により近い第３の磁性膜６を薄く設ける。As shown in FIG. 1, the magnetoresistive effect film (spin valve film) of the present invention has a larger lattice constant between the second magnetic film 5 and the antiferromagnetic film 7 than the second magnetic film. Provides a thin third magnetic film 6 closer to the antiferromagnetic film.
【００２９】これにより、前記第３の磁性膜６と反強磁
性膜７の間で強い交換結合が発生し、その交換結合磁界
は前記第２の磁性膜５にも及ぶ。その結果、前記第２の
磁性膜５と第３の磁性膜６とが全体として強い交換結合
で反強磁性膜７と結ばれることになる。As a result, strong exchange coupling occurs between the third magnetic film 6 and the antiferromagnetic film 7, and the exchange coupling magnetic field extends to the second magnetic film 5. As a result, the second magnetic film 5 and the third magnetic film 6 are connected to the antiferromagnetic film 7 by strong exchange coupling as a whole.
【００３０】これは第２の磁性膜５と反強磁性膜７との
間の格子定数ミスフィットを緩和させることと等価にな
る。本発明の磁気抵抗効果膜は、大きな交換結合磁界が
得られる。また、この本発明の膜を用いたスピンバルブ
型磁気抵抗効果型（ＳＶＭＲ）磁気ヘツドでは、磁気媒
体から安定した再生出力が得られる。This is equivalent to alleviating the lattice constant misfit between the second magnetic film 5 and the antiferromagnetic film 7. The magnetoresistance effect film of the present invention can provide a large exchange coupling magnetic field. In the spin-valve magnetoresistive (SVMR) magnetic head using the film of the present invention, a stable reproduction output can be obtained from a magnetic medium.
【００３１】[0031]
【発明の効果】以上説明したように本発明の、基板上に
下地膜、第１の磁性膜、非磁性中間膜、第２の磁性膜、
反強磁性膜の順に積膜して構成される磁気抵抗効果膜に
おいて、前記第２の磁性膜と反強磁性膜との間に、薄い
第３の磁性膜を設けた磁気抵抗効果膜によれば、大きな
交換結合磁界が得られる。また、この本発明の膜を用い
たスピンバルブ型磁気抵抗効果型（ＳＶＭＲ）磁気ヘツ
ドでは、磁気媒体から安定した再生出力が得られる。As described above, according to the present invention, a base film, a first magnetic film, a non-magnetic intermediate film, a second magnetic film,
In a magnetoresistive film formed by depositing an antiferromagnetic film in order, a thin third magnetic film is provided between the second magnetic film and the antiferromagnetic film. Thus, a large exchange coupling magnetic field can be obtained. In the spin-valve magnetoresistive (SVMR) magnetic head using the film of the present invention, a stable reproduction output can be obtained from a magnetic medium.
【図１】本発明の磁気抵抗効果膜の一実施例の断面図を
示した。FIG. 1 shows a sectional view of one embodiment of a magnetoresistive film of the present invention.
【図２】従来の磁気抵抗効果膜の一例の断面図を示し
た。FIG. 2 shows a cross-sectional view of an example of a conventional magnetoresistive film.
１ 基板 ２ 下地膜 ３ 第１の磁性膜 ４ 非磁性中間膜 ５ 第２の磁性膜 ６ 第３の磁性膜 ７ 反強磁性膜 ８ 保護膜 DESCRIPTION OF SYMBOLS 1 Substrate 2 Underlayer 3 First magnetic film 4 Nonmagnetic intermediate film 5 Second magnetic film 6 Third magnetic film 7 Antiferromagnetic film 8 Protective film
Claims (3)
間膜、第２の磁性膜、反強磁性膜の順に積膜して構成さ
れる磁気抵抗効果膜において、 前記第２の磁性膜と反強磁性膜との間に、前記第２の磁
性膜よりも格子定数が前記反強磁性膜により近い薄膜で
ある第３の磁性膜を設けたことを特徴とする磁気抵抗効
果膜。1. A magnetoresistive film comprising a substrate, a base film, a first magnetic film, a non-magnetic intermediate film, a second magnetic film, and an antiferromagnetic film stacked in this order. Wherein a third magnetic film having a lattice constant closer to the antiferromagnetic film than the second magnetic film is provided between the magnetic film and the antiferromagnetic film. film.
いて、 前記第１の磁性膜、第２の磁性膜はＣｏＦｅ合金薄膜で
形成され、前記薄膜である第３の磁性膜はＮｉＦｅ合金
薄膜で形成され、前記反強磁性膜はＩｒＭｎ合金薄膜で
形成されていることを特徴とする磁気抵抗効果膜。2. A magnetoresistive film according to claim 1, wherein said first magnetic film and said second magnetic film are formed of a CoFe alloy thin film, and said third magnetic film is a NiFe alloy film. The magneto-resistance effect film is formed of a thin film, and the antiferromagnetic film is formed of an IrMn alloy thin film.
間膜、第２の磁性膜、反強磁性膜の順にそれぞれの膜を
形成して積膜する工程を有する磁気抵抗効果膜の製造方
法において、 前記第２の磁性膜を形成する工程と前記反強磁性膜を形
成する工程との間に、前記第２の磁性膜よりも格子定数
が前記反強磁性膜により近い薄膜である第３の磁性膜を
形成する工程を設けたことを特徴とする磁気抵抗効果膜
の製造方法。3. A magnetoresistive effect comprising the steps of forming a base film, a first magnetic film, a non-magnetic intermediate film, a second magnetic film, and an antiferromagnetic film on a substrate in this order and stacking them. In the method for manufacturing a film, a thin film having a lattice constant closer to the antiferromagnetic film than the second magnetic film between the step of forming the second magnetic film and the step of forming the antiferromagnetic film A method of manufacturing a magnetoresistive film, comprising the step of forming a third magnetic film.
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|---|---|---|---|
| JP11116094A JP2000306219A (en) | 1999-04-23 | 1999-04-23 | Magnetoresistance effect film and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11116094A JP2000306219A (en) | 1999-04-23 | 1999-04-23 | Magnetoresistance effect film and its production |
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ID=14678569
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| Country | Link |
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| JP (1) | JP2000306219A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010538448A (en) * | 2007-08-31 | 2010-12-09 | アルセロールミタル−ステインレス アンド ニッケル アロイズ | Crystallographically textured metal substrate, crystallographically textured device, solar cell module comprising such a device, and thin layer deposition method |
| JP2016157818A (en) * | 2015-02-24 | 2016-09-01 | アルプス電気株式会社 | Magnetic sensor and current sensor |
| EP3264123B1 (en) * | 2015-02-12 | 2024-07-24 | Alps Alpine Co., Ltd. | Magnetometric sensor and current sensor |
-
1999
- 1999-04-23 JP JP11116094A patent/JP2000306219A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010538448A (en) * | 2007-08-31 | 2010-12-09 | アルセロールミタル−ステインレス アンド ニッケル アロイズ | Crystallographically textured metal substrate, crystallographically textured device, solar cell module comprising such a device, and thin layer deposition method |
| EP3264123B1 (en) * | 2015-02-12 | 2024-07-24 | Alps Alpine Co., Ltd. | Magnetometric sensor and current sensor |
| JP2016157818A (en) * | 2015-02-24 | 2016-09-01 | アルプス電気株式会社 | Magnetic sensor and current sensor |
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