JP2000331938A - 半導体製造装置 - Google Patents

半導体製造装置

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Publication number
JP2000331938A
JP2000331938A JP11136064A JP13606499A JP2000331938A JP 2000331938 A JP2000331938 A JP 2000331938A JP 11136064 A JP11136064 A JP 11136064A JP 13606499 A JP13606499 A JP 13606499A JP 2000331938 A JP2000331938 A JP 2000331938A
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JP
Japan
Prior art keywords
driven
film
semiconductor manufacturing
magnetic material
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11136064A
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English (en)
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JP4294791B2 (ja
Inventor
Kazuyoshi Saito
和義 斉藤
Yoji Takagi
庸司 高木
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Applied Materials Inc
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Applied Materials Inc
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Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP13606499A priority Critical patent/JP4294791B2/ja
Priority to TW089109501A priority patent/TW459273B/zh
Priority to KR1020017000725A priority patent/KR20010070976A/ko
Priority to EP00927792A priority patent/EP1107297A1/en
Priority to US09/743,764 priority patent/US6503562B1/en
Priority to PCT/JP2000/003164 priority patent/WO2000070661A1/ja
Publication of JP2000331938A publication Critical patent/JP2000331938A/ja
Application granted granted Critical
Publication of JP4294791B2 publication Critical patent/JP4294791B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

(57)【要約】 【課題】 半導体製造装置において、磁性材料の耐食性
を向上させる。 【解決手段】 エピタキシャル成長装置１は、サセプタ
６を回転駆動するサセプタ駆動装置７を備えており、こ
のサセプタ駆動装置７は、処理チャンバ２の下部に立設
された支持シャフト８と、この支持シャフト８の下部に
固定され、磁性材料で形成された被駆動部１１と、この
被駆動部１１の外側に所定の間隔をもって配置された複
数の永久磁石１２を有する環状部材１３とを有してい
る。被駆動部１１の表面には、磁性材料の腐食防止のた
めの被覆膜Ｈが設けられている。この被覆膜Ｈは、被駆
動部１１の表面に形成されたニッケル被膜部Ｎと、この
ニッケル被膜部Ｎ上に形成されたクロム被膜部Ｃと、こ
のクロム被膜部Ｃ上にオゾンによる不動態化処理により
形成された金属酸化膜部Ｏとからなっている。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、エピタキシャル成
長装置等、被処理体が支持される回転可能な支持台を備
えた半導体製造装置に関するものである。
【０００２】
【従来の技術】一般にエピタキシャル成長装置は、反応
ガスが導入される処理チャンバと、この処理チャンバ内
に配設され、半導体ウェハを支持するためのサセプタ
と、このサセプタを回転させるサセプタ駆動装置とを備
えている。このサセプタ駆動装置は、例えば、サセプタ
を下方より支持する支持シャフトと、この支持シャフト
の下部に固定され、磁性材料で形成された被駆動部と、
この被駆動部の外側に所定の間隔をもって配置された複
数の磁石を有する環状部材と、この環状部材を回転駆動
させるモータとを有している。そして、モータにより環
状部材を回転させると、複数の磁石と被駆動部との間に
生じる磁気吸引力及び磁気反発力により被駆動部がつら
れて回転し、これにより支持シャフトを介してサセプタ
が回転する。
【０００３】
【発明が解決しようとする課題】上記従来技術におい
て、反応ガスとして塩素系ガスのような腐食性ガスを使
用する環境下では、磁性材料からなる部品である被駆動
部の腐食を防止するために、被駆動部に対してニッケル
メッキ等の表面処理を行っているが、磁性材料の耐食性
に関しては更なる改善が要請されている。
【０００４】本発明の目的は、磁性材料の耐食性を向上
させることができる半導体製造装置を提供することにあ
る。
【０００５】
【課題を解決するための手段】上記の目的を達成するた
め、本発明は、反応ガスが導入される処理チャンバと、
この処理チャンバ内に設けられ、被処理体を支持するた
めの支持台と、この支持台を回転させる支持台駆動手段
とを備え、支持台駆動手段は、支持台に連結され、磁性
材料で形成された被駆動部を有するシャフト部材と、被
駆動部の外側に配置され被駆動部に回転力を与える複数
の磁石を有する部材とを有する半導体製造装置であっ
て、被駆動部の表面には金属被膜が形成され、更にその
金属被膜上には金属酸化膜が形成されている半導体製造
装置を提供する。このように被駆動部の表面に形成され
た金属被膜上に、例えば不動態化処理を施して金属酸化
膜を形成することにより、金属被膜の溶解や反応等が起
きにくくなるため、磁性材料の耐食性が向上する。
【０００６】上記半導体製造装置において、好ましく
は、金属酸化膜は、金属被膜とオゾンとを化合して形成
された膜である。これにより、常温（例えば３０℃以
下）で、金属被膜上に金属酸化膜を形成することが可能
となるため、磁性材料の磁性特性の変動が低減される。
【０００７】また、好ましくは、金属被膜は、ニッケル
被膜及びクロム被膜の少なくとも一方からなる。この場
合、例えば、被駆動部の表面にニッケルメッキを施し、
このニッケルメッキ上にクロムメッキを施す。これによ
り、被駆動部の腐食防止が比較的安価に行える。
【０００８】
【発明の実施の形態】以下、本発明の好適な実施形態に
ついて図面を参照して説明する。
【０００９】図１は、本発明に係る半導体製造装置とし
て、被処理体であるシリコンウェハを１枚ずつ成膜処理
する枚葉式のエピタキシャル成長装置を概略的に示した
ものである。同図において、エピタキシャル成長装置１
は、石英ガラスで構成された処理チャンバ２を備えてお
り、この処理チャンバ２の側壁には、ガス供給口３及び
ガス排気口４が設けられている。また、処理チャンバ２
の上方及び下方には、それぞれ複数本のハロゲンランプ
５が放射状に配置されている。
【００１０】処理チャンバ２内には、炭化シリコンで被
覆されたグラファイト材料からなり、ウェハＷが支持さ
れる円盤状のサセプタ６が配設されており、このサセプ
タ６はサセプタ駆動装置７により回転駆動される。サセ
プタ駆動装置７は、処理チャンバ２の下部に立設され、
サセプタ６を裏面側から三点で水平に支持する石英ガラ
ス製の支持シャフト８と、この支持シャフト８の下部に
設けられた磁気結合部９とを有している。なお、符号１
０は、図示しない駆動装置により上下動し、ウェハＷを
下方より持ち上げるリフト機構である。
【００１１】図２及び図３に、磁気結合部９の具体的構
造を示す。同図において、磁気結合部９は、基本的に
は、支持シャフト８の下部に固定され、磁性材料、例え
ばステンレス鋼ＳＵＳ４４０で形成された被駆動部１１
と、この被駆動部１１の外側に所定の間隔をもって配置
され磁力により被駆動部１１に回転力を与える複数（こ
こでは８枚）の板状の永久磁石１２を有する環状部材１
３とからなっている。なお、支持シャフト８は、円筒状
の支持フレーム１４にベアリング１５を介して回転可能
に支持されている。
【００１２】被駆動部材１１は、支持シャフト８と共に
シャフト部材を形成するものであり、支持フレーム１４
の下部に取り付けられたカップ状の収容フレーム１６内
に収容されている。なお、収容フレーム１６は、支持フ
レーム１４の内面を大気から遮断するために、支持フレ
ーム１４にすき間なく密着固定されている。また、被駆
動部１１の外周面には、永久磁石１２の数に対応して８
つの歯部１１ａが設けられている。このような被駆動部
１１の表面には、磁性材料の腐食防止のために、被覆膜
Ｈが設けられている。
【００１３】この被覆膜Ｈの詳細を図４に示す。同図に
おいて、被覆膜Ｈは、被駆動部１１の表面に形成された
ニッケル被膜部Ｎと、このニッケル被膜部Ｎ上に形成さ
れたクロム被膜部Ｃと、このクロム被膜部Ｃ上に形成さ
れた金属酸化膜部Ｏとからなっている。このような被駆
動部１１の表面処理は、常温（例えば２０℃）の環境下
で、以下のように行う。
【００１４】まず、被駆動部１１の表面に、無電解ニッ
ケルメッキを施してニッケル被膜部Ｎを形成し、その
後、ニッケル被膜部Ｎの表面にクロムメッキを施してク
ロム被膜部Ｃを形成する。ここで、ニッケルメッキ及び
クロムメッキの二重メッキとしたのは、ニッケルとクロ
ムの組み合わせが、特に耐食性に優れているからであ
る。その後、ニッケル被膜部Ｎ及びクロム被膜部Ｃが設
けられた被駆動部１１を炉内に入れると共に、炉内にオ
ゾンガスを充填させて、クロム被膜部Ｃ上に酸化クロム
（Ｃｒ2Ｏ3）からなる金属酸化膜部Ｏを形成する。この
ようにオゾンによる不動態化処理を施すことにより、ニ
ッケルやクロムの溶解や化学反応等が起きにくくなると
共に、ピンホールのような細かい凹部も確実に被覆され
るため、被駆動部１１の材料である磁性材料の耐食性が
大幅に改善される。また、酸化剤として常温で処理可能
なオゾンを使用したので、磁性材料の磁性特性の変動が
少なくなる。
【００１５】図２及び図３に戻り、上記被駆動部１１に
回転力を付与する複数の永久磁石１２を有する環状部材
１３は、磁石配置部１３Ａと、この磁石配置部１３Ａの
下部に配置され、当該磁石配置部１３Ａよりも径の小さ
い支持部１３Ｂとからなっている。磁石配置部１３Ａの
内周面には、複数の永久磁石１２が収容フレーム１６を
挟んで上記被駆動部１１と対向するように装着されてい
る。なお、永久磁石１２と被駆動部１１との間に配置さ
れた収容フレーム１６は、永久磁石１２の磁力による被
駆動部１１の回転動作に影響を及ぼすことがほとんど無
いような材料（例えば、ステンレス鋼ＳＵＳ３１６）で
形成されている。また、支持部１３Ｂは、収容フレーム
１６の下部に結合された支持フレーム１７にベアリング
１８を介して回転可能に支持されている。
【００１６】このような環状部材１３は、駆動モータ１
９により回転駆動される。この駆動モータ１９は、支持
フレーム１４の下部に設けられた取付フレーム２０に固
定されている。駆動モータ１９の出力軸１９ａにはピニ
オン２１が取り付けられ、このピニオン２１が環状部材
１３の磁石配置部１３Ａの外周面に設けられたリングギ
ア２２と噛み合っている。
【００１７】以上のような磁気結合部９において、駆動
モータ１９を回転させると、その回転がピニオン２１及
びリングギア２２を介して環状部材１３に伝えられ、環
状部材１３が回転する。すると、複数の永久磁石１２と
磁性材料からなる被駆動部１１との間に生じる磁気吸引
力及び磁気反発力により、被駆動部１１が環状部材１３
の回転につられて回転し、これにより支持シャフト８を
介してサセプタ６が回転する。
【００１８】以上のように構成したエピタキシャル成長
装置１において、サセプタ６上にウェハＷを載置し、ハ
ロゲンランプ５によりウェハＷを加熱した状態で、サセ
プタ駆動装置７によりサセプタ６を回転させると共に、
トリクロルシラン（ＳｉＨＣｌ３）ガスやジクロルシラ
ン（ＳｉＨ２Ｃｌ２）ガス等の反応ガスをガス供給口３
から処理チャンバ２内に供給する。すると、その反応ガ
スが、所定温度に加熱されたウェハＷの表面に沿って層
流状態で流れ、ウェハＷ上にシリコンの単結晶がエピタ
キシャル成長して薄膜が形成される。
【００１９】このとき、磁性材料である被駆動部１１の
表面には、ニッケル及びクロムの二重メッキが施され、
更にその二重メッキ上にはオゾンガスによる不動態酸化
膜が形成されているので、上記のような腐食性を有する
反応ガスを使用しているにもかかわらず、磁性材料が腐
食することは少なく、これにより金属汚染を低減するこ
とができる。また、磁性材料の磁性特性が変化すること
が少ないので、被駆動部１１の回転動作が安定する。
【００２０】以上、本発明の好適な実施形態について述
べたが、本発明は上記実施形態に限定されないことは言
うまでもない。例えば、上記実施形態では、被駆動部１
１の表面にニッケルメッキを施した後、クロムメッキを
施し、更にオゾンによる不動態酸化膜を形成するものと
したが、ニッケルメッキの上にオゾンによる不動態酸化
膜を形成してもよく、あるいは被駆動部１１の表面にク
ロムメッキを施し、その上にオゾンによる不動態酸化膜
を形成してもよい。また、上記ニッケルメッキやクロム
メッキ以外の金属被膜を被駆動部１１の表面に形成し、
その金属被膜上にオゾンによる不動態酸化膜を形成して
もよい。さらに、金属酸化膜の形成に使用するガスは、
特にオゾンガスに限らず、他のガスであってもよい。
【００２１】また、上記実施形態の半導体製造装置は、
エピタキシャル成長装置であるが、本発明は、エピタキ
シャル成長装置以外の半導体製造装置、例えばＣＶＤ装
置やドライエッチング装置等、被処理体を支持するため
の回転可能な支持台を備えた全てのものに適用可能であ
る。
【００２２】
【発明の効果】本発明によれば、磁性材料で形成された
被駆動部の表面に金属被膜を形成し、更にその金属被膜
上に金属酸化膜を形成するようにしたので、磁性材料の
耐食性が向上し、金属汚染を低減することができる。
【００２３】また、オゾンガスを用いて金属酸化膜を形
成したので、常温下での表面処理が可能となり、磁性材
料の磁性特性に影響を及ぼすことが少なくなる。
【図面の簡単な説明】
【図１】本発明に係わる半導体製造装置としてエピタキ
シャル成長装置を概略的に示す説明図である。
【図２】図１に示す磁気結合部の具体的構造を示す図で
ある。
【図３】図２のＩＩＩ−ＩＩＩ線断面図である。
【図４】図２に示す被駆動部の表面に形成された被覆膜
部を示す図である。
【符号の説明】
１…エピタキシャル成長装置（半導体製造装置）、２…
処理チャンバ、６…サセプタ（支持台）、７…サセプタ
駆動装置（支持台駆動装置）、８…支持シャフト（シャ
フト部材）、１１…被駆動部（シャフト部材）、１２…
永久磁石、１３…環状部材、Ｈ…被腹膜、Ｎ…ニッケル
被膜部、Ｃ…クロム被膜部、Ｏ…金属酸化膜部、Ｗ…ウ
ェハ（被処理体）。
───────────────────────────────────────────────────── フロントページの続き (72)発明者 斉藤 和義 千葉県成田市新泉14−３野毛平工業団地内 アプライド マテリアルズ ジャパン 株式会社内 (72)発明者 高木 庸司 千葉県成田市新泉14−３野毛平工業団地内 アプライド マテリアルズ ジャパン 株式会社内 Ｆターム(参考） 4K030 AA03 AA06 BA29 BB02 FA10 GA06 KA23 KA46 KA47 LA15 5F045 AB02 AC05 EK11 EM10

Claims (3)

    【特許請求の範囲】
  1. 【請求項１】 反応ガスが導入される処理チャンバと、
    この処理チャンバ内に設けられ、被処理体を支持するた
    めの支持台と、この支持台を回転させる支持台駆動手段
    とを備え、前記支持台駆動手段は、前記支持台に連結さ
    れ、磁性材料で形成された被駆動部を有するシャフト部
    材と、前記被駆動部の外側に配置され前記被駆動部に回
    転力を与える複数の磁石を有する部材とを有する半導体
    製造装置であって、 前記被駆動部の表面には金属被膜が形成され、更にその
    金属被膜上には金属酸化膜が形成されている半導体製造
    装置。
  2. 【請求項２】 前記金属酸化膜は、前記金属被膜とオゾ
    ンとを化合して形成された膜である請求項１記載の半導
    体製造装置。
  3. 【請求項３】 前記金属被膜は、ニッケル被膜及びクロ
    ム被膜の少なくとも一方からなる請求項１または２記載
    の半導体製造装置。
JP13606499A 1999-05-17 1999-05-17 半導体製造装置 Expired - Fee Related JP4294791B2 (ja)

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KR1020017000725A KR20010070976A (ko) 1999-05-17 2000-05-17 반도체 제조장치 및 그 제조방법
EP00927792A EP1107297A1 (en) 1999-05-17 2000-05-17 Apparatus for manufacturing semiconductor device and method of manufacture thereof
US09/743,764 US6503562B1 (en) 1999-05-17 2000-05-17 Semiconductor fabrication apparatus and fabrication method thereof
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TW459273B (en) 2001-10-11

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