JP2000332354A - Semiconductor near-field light source, manufacturing method thereof, and near-field optical system using the same - Google Patents

Abstract

[PROBLEMS] To provide a semiconductor near-field light source that is highly efficient, can be arrayed, is easy to manufacture, a method of manufacturing the same, and a near-field optical system using the same. A semiconductor near-field light source includes a compound semiconductor substrate (1).
1, a compound semiconductor layer having a surface-emitting laser structure 12, a compound semiconductor layer 15 having a triangular pyramid structure on the surface of the compound semiconductor layer, and an oscillation wavelength on the order of the oscillation wavelength of the surface-emitting laser near the apex of the triangular pyramid structure. It has a minute opening 13. The oscillation light of the surface emitting laser is guided to the minute aperture 13 to generate near-field light.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a semiconductor near-field light source which can be used for an ultra-high resolution microscope or ultra-high resolution photolithography, a method of manufacturing the same, and a near-field optical system using the same.

[0002]

2. Description of the Related Art A near-field optical system and its application system, which enable measurement and processing at a resolution lower than the wavelength using light, have been actively proposed in recent years.

There are several examples of near-field light generating devices used for these. For example, a fiber probe (SM)
ononobe et al. Applied Op
tics 36, 1496 (1997)) is to selectively etch a quartz fiber doped with GeO ₂ distribution in the core to form minute protrusions and minute openings. Not only can a pinhole having an extremely narrow opening be formed, but also a multi-stage tapered structure can be formed by controlling the impurity distribution, so that the attenuation rate of light intensity near the minute opening can be reduced. Therefore, the near-field generation efficiency can be increased.

On the other hand, there are many problems in the future, such as low productivity, in particular, that it is not suitable for arraying, which is considered to be essential for many applications in the future, and the degree of freedom of the opening shape is small.

Further, as an example in which an array is considered using a semiconductor process, there is one disclosed in Japanese Patent Application Laid-Open No. Hei 5-100168 (see FIG. 9). This document states that “a pinhole 81 having a wavelength equal to or less than the wavelength formed on the active layer 805 of the surface emitting laser at the center of the electrode by photolithography.
3 is opened, and evanescent light is emitted from this pinhole. "However, no specific device structure or manufacturing method is described.
Further, since no method for efficiently extracting near-field light is described, it cannot be said that this is a practical configuration. In FIG. 9, reference numeral 801 denotes a laser substrate; 802, a buffer layer;
Is a semiconductor multilayer mirror, 804, 808, and 809 are current confinement semiconductor layers, 806 is a cladding layer, 807 is a contact layer, 810 is an insulating layer, and 812 is a laser electrode.

[0006] Further, there has been proposed a method of producing a fine opening tip on a silicon wafer by using wet etching (RC Davis and CC).
Williams; Applied Physic
s Letters, 66, 2309 (199
5), see FIG. 10). In FIG. 10, a pyramid structure is formed on a silicon wafer (a), and the tip is sharpened by oxidation (b). Thereafter, a photoresist is formed except for the oxidized portion near the tip of the tip (c), and the oxidized portion near the tip of the tip is etched (d). Then, after Al is deposited on the entire surface, Al is etched only near the apex of the tip to form a minute opening (e).

Although this method has an advantage that a two-dimensional array light source and a two-dimensional array minute aperture can be independently manufactured, the alignment is separately required, and the yield of the minute aperture largely depends on the instability of wet etching itself. It has the disadvantage of being done.

Accordingly, it is an object of the present invention to provide a structure of a semiconductor near-field light source that can be arrayed with high efficiency, is easy to manufacture, a method of manufacturing the same, and a near-field optical system using the same. .

[0009]

A semiconductor near-field light source according to the present invention for achieving the above object has a compound semiconductor layer having a surface emitting laser structure on a compound semiconductor substrate, and has a triangular pyramid structure on the surface of the compound semiconductor layer. Having a small opening in the vicinity of the apex of the triangular pyramid structure that is smaller than or equal to the oscillation wavelength of the surface emitting laser, and the oscillation light of the surface emitting laser is guided to the small opening to generate near-field light. Is generated.

The following modes are possible based on this basic configuration. On a compound semiconductor substrate having a (111) plane, a surface emitting laser structure including at least a pair of semiconductor multilayer film reflecting mirrors and an active layer stacked in a layer thickness direction is crystal-grown, and the triangular pyramid structure has a crystal surface. Is formed selectively on the exposed surface only by forming a dielectric film having an equilateral triangular substrate exposed surface and using the dielectric film as a selective growth mask. At this time, one side of the substrate exposed surface of the equilateral triangle is set to be along the <-110> direction.

Further, the surface emitting laser structure has a structure of III-
It has an active layer containing a VN material (a compound semiconductor material containing N (nitrogen) as a Group V material among Group III and V compound semiconductor materials is described in this specification). This effect is described later in the description of the embodiments.

The triangular pyramid structure is covered with a metal film that also functions as an electrode and a light shielding film, except for the minute opening. This effect is also described in the description of the embodiment below.

[0013] The small opening can be manufactured by the following method. Firstly, after the triangular pyramid structure is completely formed up to the apex, a metal is deposited so that the vicinity of the apex becomes thinner than the rest, and then the small opening is formed near the apex by dry etching, a focused ion beam, or the like. This is a minute aperture of the order of the oscillation wavelength or less formed by removing the metal and the semiconductor (see the first embodiment described later).

Second, after the triangular pyramid structure is completely formed up to the apex, a metal is vapor-deposited so that the vicinity of the apex is thinner than other portions. This is a minute aperture of the order of the oscillation wavelength or less formed by performing photothermal excitation etching while emitting the surface emitting laser (see the second embodiment described later).

Third, crystal growth is stopped before the triangular pyramid structure forms a vertex, and after opening a micro-opening of the order of the oscillation wavelength or less, the vicinity of the vertex including the micro-opening becomes another. This is a small opening of the order of the oscillation wavelength or less, which is formed by exposing the small opening by removing the metal only near the apex by dry etching or the like after vapor-depositing a metal so as to be thinner than that of the above. In this case, after the metal is vapor-deposited, the metal is removed only in the vicinity of the apex by performing photothermal excitation etching while emitting the surface-emitting laser in an etching gas such as chlorine to remove the metal. May be formed by exposing (see the description of a second embodiment described later).

Fourth, the small opening is formed by forming the triangular pyramid structure with a plurality of compound semiconductor layers, and growing the material in at least the vicinity of the apex forming the small opening from the material of the other portion. This is a minute aperture of the order of the oscillation wavelength or less formed by selectively removing the material near the apex (see a third embodiment described later).

Furthermore, a method for manufacturing a semiconductor near-field light source according to the present invention, which achieves the above object, comprises a pair of semiconductor multilayer film reflecting mirrors stacked on a compound semiconductor substrate having a (111) plane in a layer thickness direction. Crystal growing a surface emitting laser structure including at least a layer, forming a dielectric film having an equilateral triangular substrate exposed surface on the crystal surface, and using the dielectric film as a selective growth mask, And a step of selectively forming a triangular pyramid structure only in the above, and a step of forming a minute aperture having a wavelength equal to or less than the oscillation wavelength of the surface emitting laser near the apex of the triangular pyramid structure.

In the method for manufacturing a semiconductor near-field light source according to the present invention, the following aspects are possible based on this basic configuration. One side of the substrate exposed surface of the equilateral triangle is <−11.
0> direction. The active layer is III
-A film is formed including the VN material. A step of covering the triangular pyramid structure with a metal film that also functions as an electrode and a light shield film.
Further, the minute opening can be formed by the method as described above.

Further, the near-field optical system according to the present invention, which achieves the above object, provides the above-described semiconductor near-field light source arrayed on the same plane, and enables the semiconductor near-field light source to be driven independently or in a matrix. Having an electrode formed on the workpiece near the semiconductor near-field light source array, high-density and high-speed processing, exposure, recording or performing operations such as reading, An arrayed semiconductor near-field light source that is bonded (press-bonded without using an adhesive) or bonded (using an adhesive) to a substrate having a curved surface, and the semiconductor near-field light source is independent or in a matrix High-density and high-speed processing, exposure, recording, or reading of a workpiece having electrodes formed so as to be drivable and having a curved surface disposed close to the semiconductor near-field light source array I do And wherein the door.

[0020]

The present invention typically utilizes the fact that the growth direction of a III-V compound semiconductor greatly depends on the plane orientation depending on the growth conditions, and uses a surface emitting laser and a small aperture tip on the same substrate. Are integrated and manufactured using a compound semiconductor.

FIG. 1 schematically shows the structure of a surface emitting laser 12 having a minute opening 13 formed on the same substrate 11. After the surface emitting laser structure 12 is grown on the compound semiconductor substrate 11, a semiconductor layer transparent to the laser wavelength is selectively regrown in the layer direction via a selective growth mask. A triangular pyramid structure 15 surrounded by a triangle (also abbreviated as a tip) is obtained by utilizing the plane orientation dependence of the growth rate under the growth condition.
Can be obtained. An electrode 14 is formed on almost the entire surface of the element surface.

In the surface emitting laser 12 having the tip 15 having a triangular pyramid structure, light concentrates near the apex. Therefore, an extremely high efficiency near-field generating light source can be realized by forming the small aperture 13 near the apex. The minute opening 13 can be formed by dry etching or the like. However, if the position of the minute opening can be specified by a self-alignment method using an oscillation beam, near-field light can be generated with higher efficiency.

According to the manufacturing process of the surface emitting laser, 2
Since it is easy to form a dimensional array, near-field light sources can be arranged at high density on a plane. If a process such as epitaxial lift-off is applied, a near-field light source can be arranged in an array on a curved surface.

[0024]

Embodiments of the present invention will be described below with reference to the drawings.

[First Embodiment] A first embodiment of the present invention is as follows.
According to an example of making a tip with two growths. FIG. 2 is a schematic diagram illustrating the manufacturing process of the present embodiment. The structure will be described with reference to FIGS.

(1) VCSEL (vertical c)
avity surface emitting la
First, for example, as shown in FIG. 2A, a surface emitting laser structure is epitaxially grown on the entire surface of an n-type (111) B-plane GaAs substrate 101.

The layer structure at this time is as follows. n
-Type AlAs / GaAs multilayer reflective layer 103, AlGa
As / GaInNAs MQW active layer 104, p-type Al
As / GaAs multilayer reflective film 105 and p-type AlGa
The As cap layer 106 is laminated (FIG. 2A). In this embodiment, the active layer 104 is formed of AlGaAs / GaInN.
An As MQW structure (an active layer made of a III-V semiconductor material containing N in a group V element) is used, but from the following two viewpoints.

One is that the oscillation wavelength can be made longer (1.3 μm in the present embodiment) while using the GaAs substrate 101, and 0.6 μm or 0.8 μm
It has a higher tolerance than short-wave light sources such as.

Second, the near-field light sources can be arranged close to each other. As will be described later, the semiconductor near-field light sources can be arranged not only two-dimensionally but also physically close to each other at intervals of several tens of μm. However, the actual spacing is determined by the crosstalk of heat, electricity and light. In particular, with respect to heat, it is necessary to select a laser structure having low power consumption and excellent temperature characteristics (the characteristics are hardly changed even when the ambient temperature changes). A surface emitting laser using the GaInNAs / AlGaAs MQW active layer 104 having a deep well satisfies this requirement. In other than this, for example, InGaAsP / InGaAs surface emitting lasers generally used in the 1.3 μm band have poor power consumption and temperature characteristics, so that reduction in characteristics due to thermal crosstalk cannot be ignored. It is not preferable as a laser structure applied to such a close arrangement.

Of course, the wavelength may be arbitrarily selected according to the application. For example, if GaInN / AlGaN MQW is selected as the active layer, a wavelength in the 300 nm band can be selected.
If s / GaAs MQW is selected for the active layer, a wavelength in the 800 nm band can be selected. In the case of this embodiment, the layer thickness and composition of the p-type and n-type multilayer layers 103 and 105 are also optimized according to the oscillation wavelength.

(2) Preparation of Selective Growth Mask An SiO ₂ film (about 200 nm thick) 102 having a regular triangular substrate exposed surface with a side of 5 μm is formed on a growth substrate 101. At this time, one side of the triangle is set along the <-110> direction (see FIG. 2B which is a sectional view and FIG. 2C which is a plan view).

(3) Fabrication of Surface Emitting Laser Structure by Selective Growth In a gas source crystal growth method such as MOCVD or CBE, a crystal growth surface can be selectively obtained depending on the plane orientation. Therefore, a semiconductor layer 106 having a band gap larger than the oscillation wavelength of the surface emitting laser, for example, p-type AlGaAs is selectively laminated on the substrate on which the selective growth mask 102 has been formed, using MOCVD, CBE, or the like.

Under a high temperature and low arsenic pressure (for example, a substrate temperature of 750
By growing at a temperature of 5 ° C. and a group V group III ratio 5), a triangular pyramid structure (tip) 106 composed of (110) facets can be formed epitaxially only on the exposed surface. This tip 106 has extremely high controllability since the growth stops automatically when the tip 106 forms an apex of three surfaces (the angle of each surface is about 100 degrees).

Further, from the viewpoint of the design of the near-field light source, since the vertex is formed of three surfaces, the opening diameter at the tip can be made smaller than that of the vertex formed of four or more surfaces. It has a structure effective to increase the resolution as a function.

(4) Electrode formation The p-type electrode (for example, T-type electrode) is removed so that the selection mask 102 is removed and the triangular pyramid tip 106 and the entire surface of the growth substrate are covered.
(i / Pt / Au film) 108 is formed. At this time, the Ti / Pt / Au film 10 is formed by using an oblique evaporation method using a sputtering method or an electron beam evaporation method, a mask evaporation method, or the like.
In FIG. 8, a thin film can be formed only near the vertex (FIG. 2).
(D)). Each thickness of the Ti / Pt / Au film 108 is about 50 nm / 50 nm / 200 nm at the slope and about half of that at the top. This metal film 108
Has both the function of a positive electrode and the function of a shield film for light generated inside. Further, a negative electrode 109 was formed on the back surface of the substrate 101 (FIG. 2D).

(4) Fabrication of Micro Aperture In order to fabricate the micro aperture 110, it is effective to use RIE or the like. Specifically, the metal film 108 is made of Ti
In the case of / Pt / Au, first, by irradiating the substrate with Ar plasma perpendicularly using Ar-RIE, Au and Pt at the tip can be removed. This is because the metal film 108 at the tip is the thinnest.

Next, only Ti is selectively etched by CF ₄ -RIE to expose the semiconductor tip 106 at the tip, and the AlGaAs layer 106 is etched by Ar-RIE or a focused ion (eg, gallium) beam. By doing so, a minute opening 11 having an opening diameter of about 100 nm
0 can be formed (FIG. 2E).

Next, the operation principle of this embodiment will be described. By applying a voltage between the positive electrode 108 and the negative electrode 109 and passing a current of several mA, the p-type multilayer films 105 and n
Carriers are injected into the active layer 104 via the mold multilayer film 103, and when the threshold current density is reached, oscillation starts in a direction perpendicular to the plane. The wavelength of the oscillating light is set to 1300 nm in the air, but is about 400 nm in the laser in relation to the refractive index of the semiconductor laminated structure.

When the oscillating light reaches the minute opening 110 via the tip 106, only the near-field component seeps out of the opening,
Other light is partially absorbed by the resonator, but most returns to the active layer 104 and is reused. Thus, the minute opening 1
Light arriving at a slope other than 10 is reflected by the metal film 108 and eventually absorbed by the active layer 104 and contributes to oscillation again. Therefore, compared with a case where a minute aperture is simply formed on the surface of a surface emitting laser. , The usage efficiency is extremely high.

[Second Embodiment] A second embodiment of the present invention is as follows.
The present invention relates to an example in which a semiconductor layer is grown in a regular triangular pyramid shape, and then a minute opening is formed at the vertex by the following self-alignment method. Although the steps of forming the minute openings of the first embodiment are simple, it was necessary to perform time control to confirm the end point of the process of forming the minute openings (end point of etching of the semiconductor layer 106). The present embodiment is an example in which the number of fine aperture forming process steps is increased, but a fine aperture can be surely formed and a near-field light generating light source with higher performance can be realized.

FIG. 3 is a schematic sectional view showing the manufacturing process. 3, the same functional portions as those shown in FIG. 2 are denoted by the same reference numerals.

The process up to the step of manufacturing the surface emitting laser structure by selective growth (3) is the same as that of the first embodiment (FIG. 3A).
In the step (4), the sample is loaded into the dry etching chamber 200 (FIG. 3B). At this time, for example, the surface emitting laser is energized in a chlorine gas atmosphere 201 to be in an oscillating state, whereby the etching with chlorine proceeds only at the apex portion where the light density of the oscillation light 203 is high (photothermal assist effect), and An opening 204 is formed (FIG. 2)
(C)). The end point detection of this process may be performed by a near-field probe (the near-field light leaking from the minute opening 204 to be formed is detected by the probe) or by time control.

When the fine opening 204 is formed on the top surface before the apex of the triangular pyramid of the semiconductor 106 is completely formed, the growth is stopped, and after the metal film 108 is entirely covered, The above dry etching may be performed. In this case, a condition for etching only the metal 108 may be selected.

The following effects are specific to the present embodiment. (1) A light source with high near-field generation efficiency can be easily manufactured.
Conventionally, the extraction efficiency of near-field light leaking from a minute aperture is about 10 ⁻⁵ , but in the present embodiment, it is dramatically improved to about 10 ⁻³ .

(2) Since the opening can be set by self-alignment due to oscillation, the process is easy. (3) The end point of the minute opening forming process can be easily confirmed. (4) By controlling the current during driving, an arbitrary opening shape or diameter can be manufactured with good controllability. (5) By controlling the drive current of each light source when the light sources are arrayed, openings (for example, desired small openings having different diameters) can be formed independently of each other. (6) A minute opening having a shape corresponding to the polarization of the oscillation light or the near-field pattern can be opened. Thereby, for example, near-field light can be emitted or not emitted from the minute aperture depending on the polarization of the oscillation light during use.

[Third Embodiment] A third embodiment of the present invention is as follows.
This example relates to an example in which AlAs is laminated only on a portion that is to be a micro opening of a tip. Changing the tip structure can further facilitate the process.

FIG. 4 is a schematic sectional view for explaining the manufacturing method of this embodiment. 4, the same functional portions as those shown in FIG. 2 are denoted by the same reference numerals. Steps (1) and (2) in the first embodiment are common to those in the third embodiment. FIG.
In (a), when the tip is selectively regrown, most of the tip is formed of, for example, GaAs 106a, and only the vertex corresponding to the minute opening position is AlAs 106b.

After the growth, only the AlAs layer 106b is etched by wet etching, so that the minute openings 110 are formed.
(FIG. 4B). Subsequent steps may be performed according to any of the above-described embodiments.

The following effects are specific to the present embodiment. (1) Since the size of the minute opening 110 is formed by crystal growth, controllability is extremely high. (2) By controlling the shape of the selection mask 102, the shape and size of the minute opening 110 can be controlled.

[Fourth Embodiment] The fourth embodiment relates to an example in which the near-field light sources of the present invention are arrayed. FIG. 5 is a schematic plan view for explaining the fourth embodiment. In FIG.
Is a surface-emitting laser having minute apertures 501 arranged in a two-dimensional array. Reference numeral 503 denotes a surface-emitting laser 502 in a matrix form (the laser 502 at the point where the electrode wiring of the row and column to which voltage is applied intersects). Matrices wiring for driving in an excited mode), and 504 is a substrate provided with matrices wiring 503. As the substrate 504, the substrate itself on which the surface emitting laser 502 is grown may be used.

Here, an example is shown in which 4 × 4 = 16 devices 502 are arranged in a two-dimensional array at intervals of 50 μm, but the intervals and layout are not limited to this.

The operation of this embodiment is performed, for example, in the vertical / horizontal (row /
By applying an electric signal to each of the electrodes in (row), one near-field light source 502 can be selectively driven at a certain time.
Here, the example of the matrix wiring 503 is shown, but a method of independently driving the surface emitting lasers 502 by independent wiring is of course possible.

FIG. 6 shows an example of actual use of such a near-field light source array. In FIG. 6 which is a front view,
Reference numeral 601 denotes the near-field light source array on the substrate; 602, a support for supporting the array 601 for mechanical movement; and 603, a workpiece or a sample.

For example, if the sample 603 is a sample on which a resist is applied, a resist pattern having a resolution of 100 nm or less can be exposed at a high speed by bringing the near-field light source array 601 close to the sample. Further, when the recording medium 603 is rotated, 6
Optical pickups 01 and 602 can also write and read data at high speed and high density.

[Fifth Embodiment] The fifth embodiment relates to an example in which the near-field light source of the present invention is arrayed on a curved surface as another application example. FIG. 7 schematically shows a usage example.
In FIG. 7 which is a partial front view, reference numeral 701 denotes a near-field light source of the present invention, reference numeral 702 denotes a substrate having a curved surface shape in which the near-field light sources 701 are arranged and attached in an array, and reference numeral 703 denotes For example, it is a ball-shaped object to be processed having a curved surface shape.

With such an arrangement, high-speed, high-density recording or processing can be performed on a curved surface, as in the case of the flat surface of the fourth embodiment.

A method for arranging the near-field light source 701 on a curved surface will be briefly described. FIG. 8 is a schematic sectional view showing the process. This method is known as an epitaxial lift-off method (for example, Applied Ph
ysics, 51, 2222 pages (1987)
See). First, GaAs having a (111) B plane
AlAs sacrificial layer (0.5 μm thick) 90 on substrate 900
2 and a GaAs buffer layer (thickness: 1 μm) are stacked, and a near-field light source array 901 is manufactured using this substrate by any one of the first to third embodiments. after this,
An element isolation groove 903 is formed in a plane pattern for separating each laser so as to completely penetrate the sacrificial layer 902 (FIG. 8).
(A)).

Next, a near-field light source array 90 is attached to a temporary support substrate (eg, a Si substrate) 904 via a wax 905 or the like.
Then, only the AlAs sacrificial layer 902 is etched using HF or the like to completely separate the elements 901 from the substrate 900 (see FIG. 8B). Then, the near-field light source 901 is attached to the final support substrate 906 by bonding or bonding (FIG. 8C).

The support substrate 906 may be a rigid substrate having a curved shape or a flexible film. In the latter case, it may be further attached to a hard substrate having a desired shape. Either method can realize a near-field light source array supported on a substrate 702 as shown in FIG. The usage is the same as in the fourth embodiment.

[0060]

As described above, according to the present invention, the following effects can be obtained. (1) A light source with high near-field light generation efficiency can be realized. (2) A minute aperture for generating near-field light can be easily formed. (3) The micro-aperture and the semiconductor laser can be integrated. (4) By controlling the drive current, it is possible to produce a small aperture for generating near-field light having an arbitrary aperture diameter or shape (see the second embodiment). (5) By controlling the driving current in the same manner, openings (fine openings for generating near-field light having different diameters or shapes) can be independently formed in the near-field light source array (see the second embodiment). (6) Near-field light sources can be arranged in an array on a flat surface or a curved surface (see the fourth and fifth embodiments).

[Brief description of the drawings]

FIG. 1 is a schematic perspective view of a semiconductor near-field light source (surface emitting laser) of the present invention.

FIG. 2 is a manufacturing process diagram of the first embodiment of the present invention.

FIG. 3 is a schematic sectional view showing a manufacturing process of a second embodiment of the present invention.

FIG. 4 is a schematic sectional view showing a manufacturing process of a third embodiment of the present invention.

FIG. 5 is a schematic plan view showing a fourth embodiment of the present invention.

FIG. 6 is a schematic front view showing a fourth embodiment of the present invention.

FIG. 7 is a schematic front view showing a fifth embodiment of the present invention.

FIG. 8 is a schematic sectional view showing an example of a manufacturing process according to a fifth embodiment of the present invention.

FIG. 9 is a sectional view illustrating a conventional example.

FIG. 10 is a process diagram illustrating a conventional example.

[Explanation of symbols]

11, 101, 504, 900 Substrate 12, 502 Near-field light source (surface emitting laser) 13, 110, 204, 501 Micro aperture 14, 108 Positive electrode 15, 106 Tip 102 Selective growth mask 103, 105 DBR (distributed)
Bragg reflector) Multilayer film 104 Active layer 106a GaAs layer 106b AlAs layer 109 Negative electrode 200 Dry etching chamber 201 Chlorine gas atmosphere 202 Current supply device 203 Oscillation light 503 Matrix wiring 601, 701, 901 Near field light source array 602, 702, 906 (Supporting substrate) 603, 703 Workpiece object 902 Sacrificial layer 903 Element isolation groove 905 Wax 904 Temporary supporting substrate

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H097 AA16 CA03 CA17 GA45 LA10 5F046 CA03 CA09 CA10 5F073 AA61 AA74 AB17 CA01 CB05 DA24 DA26 EA19 FA16 FA21

Claims (21)

[Claims] A compound semiconductor layer having a surface emitting laser structure on a compound semiconductor substrate; a compound semiconductor layer having a triangular pyramid structure on a surface of the compound semiconductor layer; A semiconductor near-field light source having a minute aperture of the order of the oscillation wavelength of a light-emitting laser or less, and wherein the oscillation light of the surface-emitting laser is guided to the minute aperture to generate near-field light. 2. A surface emitting laser structure including at least a pair of semiconductor multilayer film reflecting mirrors and an active layer stacked in a thickness direction on a compound semiconductor substrate having a (111) plane, and the triangular pyramid structure is formed. Forming a dielectric film having an equilateral triangular substrate exposed surface on the crystal surface, and selectively forming the dielectric film only on the exposed surface by using the dielectric film as a selective growth mask. The semiconductor near-field light source according to claim 1, wherein: 3. A side of the substrate exposed surface of the equilateral triangle is <−1.
3. The semiconductor near-field light source according to claim 2, wherein the semiconductor near-field light source is set along the <10> direction. 4. The device according to claim 1, wherein said surface emitting laser structure has an active layer containing a III-VN material.
Or the semiconductor near-field light source according to 3. 5. The semiconductor proximity device according to claim 1, wherein the triangular pyramid structure is covered with a metal film that also functions as an electrode and a light shielding film, except for the minute opening. Field light source. 6. The micro-aperture is formed by completely forming the triangular pyramid structure up to the apex, depositing a metal so that the vicinity of the apex becomes thinner than the other, and then performing dry etching, a focused ion beam, or the like. 6. The semiconductor near-field light source according to claim 1, wherein the aperture is a minute aperture of an oscillation wavelength order or less formed by removing the metal and the semiconductor. 7. The fine opening is formed by completely forming the triangular pyramid structure up to the apex, depositing a metal such that the vicinity of the apex becomes thinner than the other, and then etching the surface in an etching gas such as chlorine. 6. A micro-aperture having a size smaller than the oscillation wavelength and formed near an apex by performing photothermal excitation etching while emitting a light-emitting laser.
A semiconductor near-field light source according to any one of the above. 8. The micro-aperture, wherein crystal growth is stopped before the triangular pyramid structure forms an apex, a micro-aperture of the order of the oscillation wavelength or less is opened, and the vicinity of the apex including the micro-aperture is compared with the others. A thin opening having an oscillation wavelength order or less formed by exposing the fine opening by removing the metal only near the apex by dry etching or the like after depositing a metal so as to be thinner, wherein 6. The semiconductor near-field light source according to any one of 1 to 5. 9. The micro-aperture, wherein crystal growth is stopped before the triangular pyramid structure forms a vertex, a micro-aperture of the order of the oscillation wavelength or less is opened, and the vicinity of the vertex including the micro-aperture is compared with the other. After depositing a metal so as to be thin, in an etching gas such as chlorine, while emitting the surface emitting laser,
6. A micro-opening having an oscillation wavelength order or less formed by exposing the micro-opening by removing the metal only near the apex by performing photothermal excitation etching. The semiconductor near-field light source according to the above. 10. The minute opening, wherein the triangular pyramid structure is formed of a plurality of compound semiconductor layers, and a material is grown so that at least a material near a vertex forming the minute opening and a material in another portion are different. The semiconductor near-field light source according to any one of claims 1 to 5, wherein the aperture is a minute aperture of an oscillation wavelength order or less formed by selectively removing a material near a vertex. 11. The method for manufacturing a semiconductor near-field light source according to claim 1, wherein a pair of semiconductor multilayers are stacked in a layer thickness direction on a compound semiconductor substrate having a (111) plane. Crystal growing a surface emitting laser structure including at least a film reflecting mirror and an active layer, forming a dielectric film having an equilateral triangular substrate exposed surface on the crystal surface, and using the dielectric film as a selective growth mask A step of selectively forming a triangular pyramid structure only on the exposed surface, and a step of forming a minute aperture having a wavelength equal to or less than the oscillation wavelength of the surface emitting laser near the apex of the triangular pyramid structure. Manufacturing method of near-field light source. 12. One side of the substrate exposed surface of the equilateral triangle is <-
The method for manufacturing a semiconductor near-field light source according to claim 11, wherein the semiconductor near-field light source is set along the <110> direction. 13. The method according to claim 11, wherein the active layer is formed to include a III-VN material. 14. The method for manufacturing a semiconductor near-field light source according to claim 11, further comprising a step of covering the triangular pyramid structure with a metal film serving also as an electrode and a light shielding film. 15. The method of fabricating a minute opening includes the steps of: completely forming the triangular pyramid structure up to an apex, depositing a metal so that the vicinity of the apex becomes thinner than the rest, dry etching, and focusing ion beam. 15. The method for manufacturing a semiconductor near-field light source according to claim 11, further comprising a step of removing a metal and a semiconductor near the apex to open a minute opening of the order of the oscillation wavelength or less. 16. The method of fabricating a micro-aperture according to claim 1, wherein after completely forming the triangular pyramid structure up to the apex, depositing a metal so that the vicinity of the apex becomes thinner than the others, and then etching the metal in an etching gas such as chlorine. The semiconductor according to any one of claims 11 to 14, further comprising a step of performing a photothermal excitation etching while emitting the surface emitting laser to form a minute opening having an oscillation wavelength or less in the vicinity of the vertex. Manufacturing method of near-field light source. 17. The method of fabricating a micro opening includes the steps of: stopping crystal growth before the triangular pyramid structure forms a vertex and opening a micro aperture of an oscillation wavelength order or less; The method according to any one of claims 11 to 14, further comprising a step of removing the metal only near the apex by dry etching or the like and exposing the minute opening after vapor-depositing a metal such that the metal is thinner than the others. A method for producing the semiconductor near-field light source according to the above. 18. The method of fabricating a micro-aperture, comprising: stopping crystal growth before the triangular pyramid structure forms a vertex and opening a micro-aperture of an oscillation wavelength order or less; After vapor-depositing a metal so that it is thinner than the others, the surface of the surface-emitting laser is emitted in an etching gas such as chlorine, and the metal is removed only near the apex by performing photothermal excitation etching. 15. The method for manufacturing a semiconductor near-field light source according to claim 11, further comprising a step of exposing the semiconductor near-field light source. 19. The method of fabricating a micro-aperture, wherein the triangular pyramid structure is formed of a plurality of compound semiconductor layers by crystal-growing at least the material near the apex forming the micro-aperture and the material of the other portion. 15. The semiconductor according to claim 11, further comprising: a step of forming a minute opening having a size equal to or less than an oscillation wavelength by selectively removing a material near the apex after the crystal growth. Manufacturing method of near-field light source. 20. The semiconductor near-field light source according to claim 1, which is arrayed on the same plane, and an electrode formed such that the semiconductor near-field light source can be driven independently or in a matrix. Having a high-density and high-speed processing for a workpiece arranged in close proximity to the semiconductor near-field light source array;
A near-field optical system for performing operations such as exposure, recording, and reading. 21. The semiconductor near-field light source according to any one of claims 1 to 10, which is bonded or bonded to a substrate having a curved surface, and wherein the semiconductor near-field light source can be driven independently or in a matrix. High-density and high-speed processing, exposure, recording, or reading of a workpiece having electrodes formed in such a manner as to have a curved surface disposed in proximity to the semiconductor near-field light source array. A near-field optical system.