JP2000355779A - Corrosion resistant parts of etching device - Google Patents
Corrosion resistant parts of etching deviceInfo
- Publication number
- JP2000355779A JP2000355779A JP2000104544A JP2000104544A JP2000355779A JP 2000355779 A JP2000355779 A JP 2000355779A JP 2000104544 A JP2000104544 A JP 2000104544A JP 2000104544 A JP2000104544 A JP 2000104544A JP 2000355779 A JP2000355779 A JP 2000355779A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- corrosion
- volume
- less
- etching apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 53
- 238000005260 corrosion Methods 0.000 title claims abstract description 50
- 230000007797 corrosion Effects 0.000 title claims abstract description 49
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 78
- 239000013078 crystal Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000002245 particle Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 4
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 150000002430 hydrocarbons Chemical class 0.000 claims 1
- 239000000460 chlorine Substances 0.000 abstract description 10
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052801 chlorine Inorganic materials 0.000 abstract description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052731 fluorine Inorganic materials 0.000 abstract description 6
- 239000011737 fluorine Substances 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 31
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000002244 precipitate Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000004115 Sodium Silicate Substances 0.000 description 6
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 6
- 229910052911 sodium silicate Inorganic materials 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001637 plasma atomic emission spectroscopy Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Chemical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、エッチング装置用
耐蝕部品に関するものである。The present invention relates to a corrosion-resistant component for an etching apparatus.
【０００２】[0002]
【従来の技術】現在、半導体製造装置用のクリーニング
ガスとして、塩素系、フッ素系などのエッチングガスが
使用されている。エッチング装置用チャンバーは、こう
したエッチングガスに対して耐蝕性を有し、これによっ
てパーティクルの発生を防止することが要求されてい
る。2. Description of the Related Art At present, chlorine-based and fluorine-based etching gases are used as cleaning gases for semiconductor manufacturing equipment. The etching apparatus chamber is required to have corrosion resistance to such an etching gas, thereby preventing generation of particles.
【０００３】[0003]
【発明が解決しようとする課題】しかし、特に高温で、
塩素系、フッ素系のプラズマガスに対して曝露される
と、エッチング装置用チャンバーの内側面が腐食を受け
易い。この腐食を防止するために、エッチングガスに対
して高度の耐蝕性を有するエッチング装置用チャンバー
が要請されていた。また、エッチング装置用チャンバー
以外に、エッチング装置用の他の耐蝕部品においても、
エッチングガスに対して高度の耐蝕性が要請されてい
た。However, especially at high temperatures,
When exposed to a chlorine-based or fluorine-based plasma gas, the inner surface of the etching apparatus chamber is susceptible to corrosion. In order to prevent this corrosion, a chamber for an etching apparatus having high corrosion resistance to an etching gas has been demanded. In addition to the etching apparatus chamber, in other corrosion-resistant parts for the etching apparatus,
High corrosion resistance has been required for the etching gas.
【０００４】本発明の課題は、塩素系、フッ素系のプラ
ズマガスなどの、高度の腐食性を示すエッチングガスを
使用したときにも、エッチング装置用耐蝕部品の曝露面
が腐食を受けないエッチング装置用耐蝕部品を提供する
ことを目的とする。An object of the present invention is to provide an etching apparatus in which the exposed surface of a corrosion-resistant component for an etching apparatus is not corroded even when a highly corrosive etching gas such as a chlorine-based or fluorine-based plasma gas is used. It is intended to provide a corrosion-resistant part for use.
【０００５】[0005]
【課題を解決するための手段】本発明は、エッチング処
理を行うためのエッチング装置用耐蝕部品であって、こ
の耐蝕部品のエッチングガスに曝露される面が炭化珪素
膜によって被覆されており、炭化珪素膜が、３Ｃ結晶系
の炭化珪素多結晶であって、炭化珪素膜の表面に対して
平行に（１１１）面が配向している炭化珪素多結晶から
なることを特徴とする。SUMMARY OF THE INVENTION The present invention relates to a corrosion-resistant component for an etching apparatus for performing an etching process, wherein the surface of the corrosion-resistant component exposed to an etching gas is covered with a silicon carbide film. The silicon film is a 3C crystal silicon carbide polycrystal, and is made of silicon carbide polycrystal whose (111) plane is oriented parallel to the surface of the silicon carbide film.
【０００６】本発明者は、エッチング装置用耐蝕部品の
曝露面を、３Ｃ結晶系の炭化多結晶からなる炭化珪素膜
によって被覆し、かつこの際、炭化珪素膜の表面に対し
て平行に多結晶の（１１１）面を配向させることによっ
て、塩素系、フッ素系などのプラズマガスのような高度
に腐食性のエッチングガスを、たとえ高温で使用したと
きにも、耐蝕部品の曝露面がほとんど腐食を受けないこ
とを見いだし、本発明に到達した。The inventor of the present invention has disclosed that an exposed surface of a corrosion-resistant component for an etching apparatus is covered with a silicon carbide film made of a 3C crystal polycrystalline silicon carbide, and at this time, the polycrystal is parallel to the surface of the silicon carbide film. Orienting the (111) surface of the corrosion-resistant component, even when a highly corrosive etching gas such as a chlorine-based or fluorine-based plasma gas is used at a high temperature, causes almost no corrosion on the exposed surface of the corrosion-resistant component. They found that they did not, and arrived at the present invention.
【０００７】好ましくは、炭化珪素膜は、高純度で理論
密度と同じ完全緻密体であり、特に好ましくは、炭化珪
素膜の純度が９９．９９９９重量％以上である。ここで
言う「９９．９９９９重量％以上」とは、炭化珪素を除
く金属元素の総量が０．０００１重量％以下であるとい
う意味である。このような緻密体を得るためには、好ま
しくは、炭化珪素膜を、化学的気相成長法によって育成
する。エッチング装置用耐蝕部品としては、エッチング
チャンバーの他、静電チャック、静電チャックの外周部
に位置するリング部、ルーフなどがある。Preferably, the silicon carbide film is a high-purity, completely dense body having the same theoretical density. Particularly preferably, the silicon carbide film has a purity of 99.9999% by weight or more. Here, “99.9999% by weight or more” means that the total amount of metal elements excluding silicon carbide is 0.0001% by weight or less. In order to obtain such a dense body, the silicon carbide film is preferably grown by a chemical vapor deposition method. Examples of the corrosion-resistant parts for the etching apparatus include an electrostatic chuck, a ring portion located on the outer peripheral portion of the electrostatic chuck, a roof, and the like, in addition to the etching chamber.
【０００８】エッチング装置用耐蝕部品を主として構成
する基材は、特に限定されないが、以下のものが特に好
ましい。 （１）炭化珪素を主成分とする焼結体。例えば、（ａ）
炭化珪素の組成比率が９０％以上であり、かつ相対密度
が９０％以上である焼結体。（ｂ）炭化珪素の組成比率
が９０％以上であり、かつ相対密度が５６％〜９０％で
ある多孔質焼結体。 （２）炭化珪素と金属シリコンとの混合焼結体。 （３）窒化珪素、窒化アルミニウム等の絶縁性セラミッ
クス。 （４）黒鉛。The base material mainly constituting the corrosion-resistant component for the etching apparatus is not particularly limited, but the following materials are particularly preferable. (1) A sintered body containing silicon carbide as a main component. For example, (a)
A sintered body having a composition ratio of silicon carbide of 90% or more and a relative density of 90% or more. (B) A porous sintered body having a silicon carbide composition ratio of 90% or more and a relative density of 56% to 90%. (2) A mixed sintered body of silicon carbide and metallic silicon. (3) Insulating ceramics such as silicon nitride and aluminum nitride. (4) graphite.
【０００９】基材の形状は、特に限定されないが、例え
ば平板状、円形、方形、矩形等がある。基材の炭化硅素
膜形成面は適当な表面粗さに研磨して置くことが好まし
い。 請求項１に記載の本発明に係るエッチング装置用
耐蝕部品は、以下の方法で製造することができる。 炭化硅素膜形成温度を１２５０〜１３５０℃とす
る。 Ｓｉ／Ｃモル比が１．１〜１．５となるようガスを供
給する。 キャリアガス（アルゴンガス、水素等）としてＨ2 ／
Ｓｉモル比が３．５〜４．５となる水素を流す。 ＣＶＤ炉内の圧力を１００〜３００ｔｏｒｒとする。 基材の１ｃｍ2 面積に対するガス供給量をＳｉ原子と
して１×１０-5〜１×１０-3ｍｏｌ／ｍｉｎとする。 ，，，，製造条件がすれると１１１軸配向が
なくなり、耐蝕性が低下する。The shape of the base material is not particularly limited, but includes, for example, a flat plate, a circle, a square, and a rectangle. It is preferable that the surface of the substrate on which the silicon carbide film is formed is polished to an appropriate surface roughness. The corrosion-resistant component for an etching apparatus according to the first aspect of the present invention can be manufactured by the following method. The silicon carbide film forming temperature is set to 1250 to 1350 ° C. The gas is supplied so that the Si / C molar ratio becomes 1.1 to 1.5. H 2 / as carrier gas (argon gas, hydrogen, etc.)
Hydrogen having a Si molar ratio of 3.5 to 4.5 is supplied. The pressure in the CVD furnace is set to 100 to 300 torr. The gas supply amount per 1 cm 2 area of the substrate is 1 × 10 −5 to 1 × 10 −3 mol / min as Si atoms. If the manufacturing conditions are reduced, the 111-axis orientation is lost and the corrosion resistance is reduced.
【００１０】このうち、１１１配向ＣＶＤ−ＳｉＣ膜は
若干の圧縮応力が膜内に存在するため熱膨脹係数がＳｉ
Ｃよりも若干低い材料すなわち４．４〜４．６ｐｐｍ／
℃（室温−１０００℃）の熱膨脹率をもつ材料がさらに
好ましい。炭化珪素膜の膜厚は５０μｍ以上であること
が好ましく、これによって耐蝕部品の曝露面の全面にわ
たって、安定してエッチングガスによる腐食を防止でき
る。また、主として経済的な理由から、炭化珪素膜の膜
厚は、３０００μｍ以下であることが好ましい。炭化珪
素膜の膜厚は、更には１００μｍ以上であることが好ま
しい。Among them, the 111-oriented CVD-SiC film has a thermal expansion coefficient of Si because a slight compressive stress exists in the film.
Slightly lower than C, that is, 4.4 to 4.6 ppm /
Materials having a coefficient of thermal expansion of ℃ (room temperature-1000 ℃) are more preferred. The thickness of the silicon carbide film is preferably 50 μm or more, whereby the corrosion by the etching gas can be stably prevented over the entire exposed surface of the corrosion-resistant component. Also, mainly for economic reasons, the silicon carbide film preferably has a thickness of 3000 μm or less. The silicon carbide film preferably has a thickness of 100 μm or more.
【００１１】炭化珪素多結晶の全容積のうち、結晶粒径
１５μｍ以上の炭化珪素結晶粒子の容積が１０容量％以
下であり、粒径１０μｍ以上の結晶粒子の容積が３０容
量％以下であり、粒径２μｍ以下の炭化珪素結晶粒子の
容積が１０容量％以下であり、粒径３μｍ以下の、炭化
硅素結晶粒子の容積が３０容量％以下であることが好ま
しい。In the total volume of the silicon carbide polycrystal, the volume of silicon carbide crystal grains having a crystal grain size of 15 μm or more is 10% by volume or less, and the volume of crystal grains having a grain size of 10 μm or more is 30% by volume or less, Preferably, the volume of silicon carbide crystal particles having a particle size of 2 μm or less is 10% by volume or less, and the volume of silicon carbide crystal particles having a particle size of 3 μm or less is 30% by volume or less.
【００１２】こうした粒径分布による作用効果も明確で
はないが、粒径１０μｍより大きい結晶粒子および３μ
ｍ未満の結晶粒子の絞める割合を減らすことによって、
（１１１）面の配向のムラが防止されるためと考えられ
る。例えば、粗大な粒子が多く存在すると、その周辺で
結晶配向が局所的に乱れた領域が生じやすく、この領域
が腐食の起点となっている可能性がある。また、粒径が
微細過ぎる粒子が多い場合にも、結晶配向にムラが生じ
やすいものと思われる。Although the function and effect of such a particle size distribution are not clear, crystal particles having a particle size larger than 10 μm and 3 μm
By reducing the squeezing rate of crystal grains smaller than m,
It is considered that unevenness of the orientation of the (111) plane was prevented. For example, if there are many coarse particles, a region in which the crystal orientation is locally disordered is likely to occur around the particle, and this region may be a starting point of corrosion. In addition, it is considered that even when there are many particles having too small a particle diameter, the crystal orientation tends to be uneven.
【００１３】粒径の測定方法について述べる。炭化珪素
膜の表面に対して垂直な方向から、倍率１０００倍の表
面走査型電子顕微鏡写真を撮影する。この写真を、視野
を維持しつつ、縦横の寸法を２倍に拡大し、試験用写真
を得る。試験用写真に５本以上の任意の直線を引く。こ
の直線が通過する各粒子について、各粒子の粒界と直線
との交点を特定する。各粒子について、通常２つの交点
が存在しているので、各粒子について２つの交点間の距
離を測定し、この距離を粒径とする。The method for measuring the particle size will be described. A surface scanning electron microscope photograph at a magnification of 1000 is taken from a direction perpendicular to the surface of the silicon carbide film. While maintaining the field of view, the vertical and horizontal dimensions of this photograph are doubled to obtain a test photograph. Draw five or more arbitrary straight lines on the test photograph. For each particle passing through this straight line, the intersection of the grain boundary of each particle and the straight line is specified. Since there are usually two intersections for each particle, the distance between the two intersections is measured for each particle, and this distance is defined as the particle size.
【００１４】炭化珪素多結晶の（１１１）面が炭化珪素
膜の表面に対して平行に配向していることは、Ｘ線回折
測定によって確認できる。即ち、炭化珪素膜の表面側か
ら特性Ｘ線を照射し、（１１１）面の回折強度を測定す
ると共に、３Ｃ結晶系に属する他の結晶面の回折強度も
測定する。（１１１）面の回折強度とは、ＪＣＰＤＳカ
ード番号２９１１２９による（１１１）面の回折強度で
ある。また、３Ｃ結晶系では、（２２０）面、（３１
１）面、（２００）面が、Ｋα−Ｃｕ回折で２０°−８
０°の間で一般には観測される。The fact that the (111) plane of the silicon carbide polycrystal is oriented parallel to the surface of the silicon carbide film can be confirmed by X-ray diffraction measurement. That is, a characteristic X-ray is irradiated from the surface side of the silicon carbide film, and the diffraction intensity of the (111) plane is measured, and the diffraction intensity of another crystal plane belonging to the 3C crystal system is also measured. The diffraction intensity of the (111) plane is the diffraction intensity of the (111) plane according to JCPDS card number 291129. In the 3C crystal system, the (220) plane, (31)
1) plane and (200) plane are 20 ° -8 by Kα-Cu diffraction.
Generally observed between 0 °.
【００１５】炭化珪素多結晶の（１１１）面が炭化珪素
膜の表面に対して平行に配向しているとは、上記の測定
方法において、（１１１）面以外の結晶面が局所的に配
向ムラとして存在していることを排除するものではない
が、（１１１）面の回折強度に対する他の結晶面の回折
強度の合計の割合は、２０％以下であることが好まし
く、１０％以下であることが更に好ましい。The fact that the (111) plane of the silicon carbide polycrystal is oriented parallel to the surface of the silicon carbide film means that, in the above measurement method, the crystal plane other than the (111) plane is locally oriented unevenly. Although not excluded, the ratio of the total diffraction intensity of the other crystal plane to the diffraction intensity of the (111) plane is preferably 20% or less, and more preferably 10% or less. Is more preferred.
【００１６】本発明を好適に適用できるエッチングガス
としては、Ｃｌ2 、ＢＣｌ3 、ＣｌＦ3 、ＨＣｌ等の塩
素系腐食性ガス、ＣｌＦ3 ガス、ＮＦ3 ガス、ＣＦ4 ガ
ス、ＷＦ6 、ＳＦ6 等のフッ素系腐食性ガスを例示で
き、またこれらのガスのプラズマに対して特に好適であ
る。エッチング装置用耐蝕部品がエッチングガスに対し
て曝露される温度としては、室温から８００℃まで広範
に適用できる。特に、本発明のエッチング装置用耐蝕部
品は、５００−８００℃の高温領域であっても、高い耐
蝕性を有する。The etching gas to which the present invention can be suitably applied includes chlorine-based corrosive gases such as Cl 2 , BCl 3 , ClF 3 and HCl, ClF 3 gas, NF 3 gas, CF 4 gas, WF 6 and SF 6. And the like, and are particularly suitable for plasma of these gases. The temperature at which the corrosion-resistant component for an etching apparatus is exposed to an etching gas can be widely applied from room temperature to 800 ° C. In particular, the corrosion-resistant component for an etching apparatus of the present invention has high corrosion resistance even in a high temperature range of 500 to 800 ° C.
【００１７】[0017]
【実施例】（実施例１）化学的気相成長法によって、黒
鉛からなる基材の表面に炭化珪素膜を形成した。基材の
形状は平板形状であり、基材の一方の主面および他方の
主面の各寸法は、縦５０ｍｍ、横５０ｍｍであり，基材
の厚さは８ｍｍとした。基材の一方の主面を♯８００以
上の砥石で研磨し、その中心線平均表面粗さＲａを３μ
ｍ未満にした。基材を化学的気相成長炉内に収容し、設
置した。この際、基材の一方の主面と他方の主面とが、
反応性ガスの噴出方向に対して平行となるように、即
ち、平板形状の基材の側面が噴出口に対向するように、
基材を設置した。EXAMPLES Example 1 A silicon carbide film was formed on the surface of a graphite base material by a chemical vapor deposition method. The shape of the base material was a flat plate shape, the dimensions of one main surface and the other main surface of the base material were 50 mm in length and 50 mm in width, and the thickness of the base material was 8 mm. One main surface of the base material is polished with a grindstone of $ 800 or more, and the center line average surface roughness Ra is 3 μm.
m. The substrate was housed and placed in a chemical vapor deposition furnace. At this time, one main surface and the other main surface of the base material are
To be parallel to the direction of ejection of the reactive gas, that is, so that the side surface of the flat plate-shaped substrate faces the ejection port,
The substrate was set.
【００１８】炉内を真空引きし、アルゴンガスによって
置換し、１３００℃の反応（成膜）温度まで昇温した。
キャリアガスとしてアルゴンを使用し、反応性ガスとし
てＳｉＣｌ4 およびＣＨ4 を導入した。Ｃに対するＳｉ
の比率をＳｉ／Ｃ＝１．３，Ｈ2 ／Ｓｉ＝４．０モル比
（標準状態に換算したときのモル比率）、Ｓｉ供給量１
×１０-4ｍｏｌ／ｃｍ2 ／分に調節した。炉内圧力を２
００Ｔｏｒｒに調節した。１．５時間の成膜を行い、冷
却し、膜厚２００μｍの炭化珪素膜を得た。比較例１は
成膜温度を１４５０℃、炉内圧力を３５０Ｔｏｒｒ、成
膜時間を１時間とした以外は実施例１と同じ条件とし
て、基材上へ膜厚２００μｍの炭化硅素膜を形成した。
これらの炭化珪素膜について、その表面に垂直な方向か
ら、走査型電子顕微鏡写真（倍率１０００倍）を撮影
し、その顕微鏡写真を図１に示すと共に、Ｋα−Ｃｕ線
によるＸ線回折測定を行い、測定結果を図２に示した。The furnace was evacuated, replaced with argon gas, and heated to a reaction (film formation) temperature of 1300 ° C.
Argon was used as a carrier gas, and SiCl 4 and CH 4 were introduced as reactive gases. Si for C
Is the ratio of Si / C = 1.3, H 2 /Si=4.0 (molar ratio when converted to a standard state), and the amount of Si supplied is 1.
It was adjusted to × 10 -4 mol / cm 2 / min. Furnace pressure 2
Adjusted to 00 Torr. The film was formed for 1.5 hours and cooled to obtain a silicon carbide film having a thickness of 200 μm. In Comparative Example 1, a 200 μm-thick silicon carbide film was formed on a substrate under the same conditions as in Example 1 except that the film forming temperature was 1450 ° C., the furnace pressure was 350 Torr, and the film forming time was 1 hour.
Scanning electron micrographs (magnification 1000 times) of these silicon carbide films were taken from a direction perpendicular to the surface thereof, and the micrographs are shown in FIG. 1 and X-ray diffraction measurement by Kα-Cu line was performed. FIG. 2 shows the measurement results.
【００１９】図１の写真から、前記したようにして、炭
化珪素多結晶の粒子の粒径分布を測定した。この結果を
表１に示す。表面粗度を測定したところ、Ｒａ＝１．８
−３．０μｍであった。また、図２から分かるように、
回折角３５．６度の（１１１）面に対応する回折ピーク
以外の回折ピークはほとんど観測されない。（１１１）
面に対応する回折ピークに対する他の回折ピークの合計
の比率は、約６％であった。また、この炭化珪素中にお
いてＳｉの占める割合を分析したところ、７０．１２−
７０．２８重量％であった。この分析は、以下の方法で
行った。以下の測定方法は、珪素の含有割合を正確に測
定できる分析方法として、特願平１０−２９５０６７号
明細書にも詳細に記載されている。From the photograph of FIG. 1, the particle size distribution of polycrystalline silicon carbide particles was measured as described above. Table 1 shows the results. When the surface roughness was measured, Ra = 1.8
-3.0 μm. Also, as can be seen from FIG.
Diffraction peaks other than the diffraction peak corresponding to the (111) plane having a diffraction angle of 35.6 degrees are hardly observed. (111)
The ratio of the sum of the other diffraction peaks to the diffraction peak corresponding to the plane was about 6%. The proportion of Si in the silicon carbide was analyzed to find that 70.12-
70.28% by weight. This analysis was performed by the following method. The following measurement method is described in detail in Japanese Patent Application No. 10-295067 as an analysis method capable of accurately measuring the silicon content ratio.
【００２０】即ち、各試験片を３ｍｍ以下になるまで粉
砕し、粉砕片を白金皿に取り、炭酸ナトリウム、ほう酸
および酸化鉄を添加した。炭酸ナトリウムおよびほう酸
は、炭化珪素の融解に使用する融剤である。酸化鉄は、
炭化珪素と融剤との酸化反応を促進するための触媒であ
る。この時点で、炭化珪素中の珪素は珪酸ナトリウムに
変化している。鉄はナトリウム塩となっているものと思
われる。That is, each test piece was pulverized until it became 3 mm or less, the pulverized piece was placed on a platinum dish, and sodium carbonate, boric acid and iron oxide were added. Sodium carbonate and boric acid are fluxes used to melt silicon carbide. Iron oxide
It is a catalyst for promoting an oxidation reaction between silicon carbide and a flux. At this point, the silicon in the silicon carbide has changed to sodium silicate. Iron appears to be in the form of a sodium salt.
【００２１】得られた反応物を塩酸に溶解させる。珪酸
ナトリウムは塩酸に不溶性である。鉄は塩化鉄に変化し
ており、塩酸に溶解している。次いで、塩酸溶液に対し
て、ポリ酸化エチレンを加えると、不溶性の珪酸ナトリ
ウムが凝集し、ゼリー状の、主として珪酸ナトリウムを
含む沈殿を生成する。The obtained reaction product is dissolved in hydrochloric acid. Sodium silicate is insoluble in hydrochloric acid. Iron has changed to iron chloride and is dissolved in hydrochloric acid. Then, when poly (ethylene oxide) is added to the hydrochloric acid solution, the insoluble sodium silicate is aggregated to form a jelly-like precipitate mainly containing sodium silicate.
【００２２】次いで、この沈殿を濾過し、温水で洗浄す
る。ここで、珪酸ナトリウムのうち１％程度は、温水洗
浄の際に溶解し、温水洗浄液（Ｂ）中に移動する。温水
洗浄によってナトリウムが洗浄され、珪酸ナトリウムの
沈殿がＳｉＯ2 ・Ｈ2 Ｏ（含水珪酸）となる。この沈殿
を強熱することで、水と濾紙とを飛散させ、主としてＳ
ｉＯ2 を含む沈殿物（Ａ）を得る。Next, the precipitate is filtered and washed with warm water. Here, about 1% of the sodium silicate dissolves during the washing with warm water and moves into the warm water washing liquid (B). Sodium is washed by warm water washing, and the precipitate of sodium silicate becomes SiO 2 · H 2 O (hydrous silicate). By intensifying the precipitate, water and filter paper are scattered, and mainly S
A precipitate (A) containing iO 2 is obtained.
【００２３】次いで、主としてＳｉＯ2 を含む沈殿物
（Ａ）に対してフッ化水素酸を加え、二酸化珪素を揮発
させる。なお、この反応は、ＳｉＯ2 ＋４ＨＦ→ＳｉＦ
4 （揮発）＋２Ｈ2 Ｏのように進行する。この後に残っ
た残滓を強熱し、この後の残滓の重量を測定する。この
測定重量と、フッ化水素酸添加前の重量との差から、沈
殿物（Ａ）中に存在していた二酸化珪素の全重量を求め
る。また、前記の温水洗浄液（Ｂ）中の可溶性珪素の量
を、高周波プラズマ発光分析法によって測定する。沈殿
物（Ａ）中に存在していた珪素の重量の測定値と、温水
洗浄液（Ｂ）中に存在していた珪素の重量の測定値とを
足し、全珪素量を算出する。Next, hydrofluoric acid is added to the precipitate (A) containing mainly SiO 2 to volatilize silicon dioxide. This reaction is carried out in the following manner: SiO 2 + 4HF → SiF
4 (Volatile) + 2H 2 O The residue remaining after this is ignited, and the weight of the remaining residue is measured. From the difference between the measured weight and the weight before the addition of hydrofluoric acid, the total weight of silicon dioxide present in the precipitate (A) is determined. Further, the amount of soluble silicon in the hot water cleaning liquid (B) is measured by a high-frequency plasma emission spectrometry. The measured value of the weight of silicon present in the precipitate (A) and the measured value of the weight of silicon present in the hot water washing liquid (B) are added to calculate the total silicon amount.
【００２４】表１の結果は以下の手順によって得た。即
ち、 試料の成膜面の加工を行わずに１０×１０×５に切り
出し、 走査型電子顕微鏡にて（ＨＩＴＡＣＨＩ Ｓ−２２５
０Ｎ）２次電子像１０００倍でサンプルに対して垂直芳
香に膜表面を撮影し、 写真の寸法を縦・横共に２倍に拡大し、 ４隅の対角線および対角線の交点を通る線分を像の視
野端まで引き、 粒界をこれら線分の交点に印をつけるギスにより交点
間の距離を測定して粒径とした。The results in Table 1 were obtained by the following procedure. That is, the sample was cut into 10 × 10 × 5 without processing the film-forming surface, and the sample was cut with a scanning electron microscope (HITACHI S-225).
0N) Photograph the film surface with the secondary electron image 1000 times vertically perpendicular to the sample, magnify the dimensions of the photograph by 2 times both vertically and horizontally, and image the diagonal line at the four corners and the line segment passing through the intersection of the diagonal lines. The distance between the intersections was measured with a grease that marks the intersections of these line segments, and the grain boundary was determined as the particle size.
【００２５】[0025]
【表１】 [Table 1]
【００２６】 膜部のみから０．１５×２×４０μｍの
薄板を切り出し、室温，１００℃，２００℃で４端子電
気抵抗測定した。その結果は次のとおりであった。A thin plate of 0.15 × 2 × 40 μm was cut out only from the film part, and four-terminal electrical resistance was measured at room temperature, 100 ° C. and 200 ° C. The results were as follows.
【００２７】[0027]
【表２】 [Table 2]
【００２８】この炭化珪素膜を、基材と共に、塩素系プ
ラズマガスに曝露した。具体的には、ＮＦ3 ガスを、６
００℃で、誘導結合プラズマによってプラズマ化した。
混合ガスの流量は７５ＳＣＣＭであり、圧力は０．１Ｔ
ｏｒｒであり、交流電力は８００ワットであり、その周
波数は１３．５６ＭＨｚであり、暴露時間は２時間であ
った。この結果、炭化珪素膜の重量減少は、０．１ｍｇ
／ｃｍ2 であった。ただし、この重量減少は、（曝露前
の炭化珪素膜の重量−曝露後の炭化珪素膜の重量）／露
出面積によって算出した。The silicon carbide film was exposed to a chlorine-based plasma gas together with the substrate. Specifically, NF 3 gas is
At 00 ° C., plasma was formed by inductively coupled plasma.
The flow rate of the mixed gas is 75 SCCM and the pressure is 0.1 T
orr, the AC power was 800 watts, the frequency was 13.56 MHz, and the exposure time was 2 hours. As a result, the weight loss of the silicon carbide film was 0.1 mg
/ Cm 2 . However, this weight loss was calculated by (weight of silicon carbide film before exposure−weight of silicon carbide film after exposure) / exposed area.
【００２９】（比較例１）実施例と同様にして基材の表
面に炭化珪素膜を形成した。ただし、基材の表面は研磨
処理せず、このときの表面粗さは５μｍであった。更に
成膜温度を１４５０℃とした。他の条件は実施例１と同
様にした。この炭化珪素膜について、その表面に垂直な
方向から、走査型電子顕微鏡写真（倍率１０００倍）を
撮影し、図３に示すと共に、Ｘ線回折測定を行い、測定
結果を図４に示した。Comparative Example 1 A silicon carbide film was formed on the surface of a substrate in the same manner as in Example. However, the surface of the substrate was not polished, and the surface roughness at this time was 5 μm. Further, the film formation temperature was 1450 ° C. Other conditions were the same as in Example 1. For this silicon carbide film, a scanning electron microscope photograph (magnification: 1000 times) was taken from a direction perpendicular to the surface thereof, and shown in FIG. 3 and X-ray diffraction measurement. The measurement results are shown in FIG.
【００３０】 図３の写真から、前記したようにして、
炭化珪素多結晶の粒子の粒径分布を測定した。この結果
を表１に示す。表面粗度を測定したところ、Ｒａ＝３．
４−５．５μｍであった。また、図４から分かるよう
に、（１１１）面に対応する回折ピークに対する他の回
折ピークの合計の比率は約５１％であった。From the photograph of FIG. 3, as described above,
The particle size distribution of the silicon carbide polycrystal particles was measured. Table 1 shows the results. When the surface roughness was measured, Ra = 3.
4-5.5 μm. As can be seen from FIG. 4, the ratio of the total of other diffraction peaks to the diffraction peak corresponding to the (111) plane was about 51%.
【００３１】 また、実施例と同様に化学分析を行った
ところ、炭化珪素中のＳｉの占める割合は７０．０５−
７０．１１重量％であった。膜部のみから０．１５×２
×４０μｍの薄板を切り出し、室温，１００℃，２００
℃で４端子電気抵抗測定した。その結果は次のとおりで
あった。When a chemical analysis was performed in the same manner as in the example, the proportion of Si in silicon carbide was 70.05-
70.11% by weight. 0.15 × 2 from the membrane only
A thin plate of × 40 μm was cut out, room temperature, 100 ° C., 200
The four-terminal electrical resistance was measured at ° C. The results were as follows.
【００３２】[0032]
【表３】 [Table 3]
【００３３】この炭化珪素膜を、実施例１と同様にして
塩素系腐食系ガスのプラズマに対して曝露した。この結
果、炭化珪素膜の重量減少は、０．５ｍｇ／ｃｍ 2 であ
った。This silicon carbide film was formed in the same manner as in Example 1.
Exposure to plasma of chlorine-based corrosive gas. This result
As a result, the weight reduction of the silicon carbide film is 0.5 mg / cm Two In
Was.
【００３４】本発明によれば、塩素系、フッ素系のプラ
ズマガスなどの、高度の腐食性を示すエッチングガスを
使用したときにも、エッチング装置用耐蝕部品の曝露面
が腐食を受けないようにできる。According to the present invention, even when a highly corrosive etching gas such as a chlorine-based or fluorine-based plasma gas is used, the exposed surface of the corrosion-resistant component for an etching apparatus is not corroded. it can.
【図１】本発明の実施例で使用する炭化珪素膜の表面に
対して垂直な方向から撮影した、走査型電子顕微鏡写真
である。FIG. 1 is a scanning electron micrograph taken from a direction perpendicular to the surface of a silicon carbide film used in an example of the present invention.
【図２】図１の炭化珪素膜の表面に対して垂直な方向か
ら測定した、Ｘ線回折チャートである。FIG. 2 is an X-ray diffraction chart measured from a direction perpendicular to the surface of the silicon carbide film in FIG.
【図３】比較例１で使用する炭化珪素膜の表面に対して
垂直な方向から撮影した、走査型電子顕微鏡写真であ
る。FIG. 3 is a scanning electron micrograph taken from a direction perpendicular to the surface of a silicon carbide film used in Comparative Example 1.
【図４】図３の炭化珪素膜の表面に対して垂直な方向か
ら測定した、Ｘ線回折チャートである。FIG. 4 is an X-ray diffraction chart measured from a direction perpendicular to the surface of the silicon carbide film in FIG.
Claims (13)
置用耐蝕部品であって、耐蝕部品基材と、この耐蝕部品
基材のエッチングガスに曝露される面を被覆した炭化珪
素膜からなっており、この炭化珪素膜が、３Ｃ結晶系の
炭化珪素多結晶からなり、炭化硅素多結晶は前記炭化珪
素膜の表面に対して平行に（１１１）面が配向してい
る、エッチング装置用耐蝕部品。An anti-corrosion component for an etching apparatus for performing an etching process, comprising: a corrosion-resistant component substrate; and a silicon carbide film coated on a surface of the corrosion-resistant component substrate exposed to an etching gas. The corrosion-resistant component for an etching apparatus, wherein the silicon carbide film is made of a 3C crystal silicon carbide polycrystal, and the silicon carbide polycrystal has a (111) plane oriented parallel to the surface of the silicon carbide film.
て成膜されていることを特徴とする、請求項１記載のエ
ッチング装置用耐蝕部品。2. The corrosion-resistant component for an etching apparatus according to claim 1, wherein said silicon carbide film is formed by a chemical vapor deposition method.
ｍであることを特徴とする、請求項１または２記載のエ
ッチング装置用耐蝕部品。3. The silicon carbide film has a thickness of 50-3000 μm.
The corrosion-resistant component for an etching apparatus according to claim 1, wherein m.
１５μｍ以上の炭化珪素結晶粒子の容積が１０容量％以
下であり、粒径１０μｍ以上の結晶粒子の容積が３０容
量％以下であり、粒径２μｍ以下の炭化珪素結晶粒子の
容積が１０容量％以下であり、粒径３μｍ以下の粒径の
容積が３０容量％以下であることを特徴とする、請求項
１または２記載のエッチング装置用耐蝕部品。4. The total volume of the silicon carbide polycrystal, wherein the volume of silicon carbide crystal particles having a particle size of 15 μm or more is 10% by volume or less, and the volume of crystal particles having a particle size of 10 μm or more is 30% by volume or less. The volume of silicon carbide crystal particles having a particle size of 2 μm or less is 10% by volume or less, and the volume of a particle size of 3 μm or less is 30% by volume or less. Corrosion resistant parts for etching equipment.
１５μｍ以上の炭化珪素結晶粒子の容積が１０容量％以
下であり、粒径１０μｍ以上の結晶粒子の容積が３０容
量％以下であり、粒径２μｍ以下の炭化珪素結晶粒子の
容積が１０容量％以下であり、粒径３μｍ以下の粒径の
容積が３０容量％以下である請求項１または２記載のエ
ッチング装置用耐蝕部品。5. The total volume of the silicon carbide polycrystal, wherein the volume of silicon carbide crystal particles having a particle size of 15 μm or more is 10% by volume or less, and the volume of crystal particles having a particle size of 10 μm or more is 30% by volume or less. 3. The corrosion-resistant component for an etching apparatus according to claim 1, wherein the volume of silicon carbide crystal particles having a particle size of 2 μm or less is 10% by volume or less, and the volume of a particle size of 3 μm or less is 30% by volume or less.
て測定した場合、炭化硅素膜の炭化硅素多結晶の（１１
１）結晶面の回折強度に対する他の結晶面の回折強度の
合計割合は、２０％以下である請求項１または２記載の
エッチング装置用耐蝕部品。6. When measured by irradiating characteristic X-rays from the surface side of the silicon carbide film, (11)
1) The corrosion-resistant part for an etching apparatus according to claim 1 or 2, wherein the total ratio of the diffraction intensity of the other crystal plane to the diffraction intensity of the crystal plane is 20% or less.
て測定した場合、炭化硅素膜の炭化硅素多結晶の（１１
１）結晶面の回折強度に対する他の結晶面の回折強度の
合計割合は、２０％以下である請求項３記載のエッチン
グ装置用耐蝕部品。7. When measured by irradiating characteristic X-rays from the surface side of the silicon carbide film, (11)
1) The corrosion-resistant part for an etching apparatus according to claim 3, wherein the total ratio of the diffraction intensity of the other crystal plane to the diffraction intensity of the crystal plane is 20% or less.
て測定した場合、炭化硅素膜の炭化硅素多結晶の（１１
１）結晶面の回折強度に対する他の結晶面の回折強度の
合計割合は、２０％以下である請求項４記載のエッチン
グ装置用耐蝕部品。8. When measured by irradiating characteristic X-rays from the surface side of the silicon carbide film, (11)
The corrosion resistant component for an etching apparatus according to claim 4, wherein 1) a total ratio of diffraction intensity of another crystal surface to diffraction intensity of a crystal surface is 20% or less.
て測定した場合、炭化硅素膜の炭化硅素多結晶の（１１
１）結晶面の回折強度に対する他の結晶面の回折強度の
合計割合は、２０％以下である請求項５記載のエッチン
グ装置用耐蝕部品。9. When measured by irradiating characteristic X-rays from the surface side of the silicon carbide film, (11)
1) The corrosion-resistant component for an etching apparatus according to claim 5, wherein a total ratio of diffraction intensity of another crystal surface to diffraction intensity of a crystal surface is 20% or less.
基材の熱膨脹係数が４．４〜４．６ｐｐｍ／℃である請
求項１または２記載のエッチング用耐蝕部品。10. The corrosion-resistant component for etching according to claim 1, wherein the coefficient of thermal expansion of the substrate at 1000 ° C. based on 40 ° C. is 4.4 to 4.6 ppm / ° C.
求項１または２記載のエッチング装置用耐蝕部品。 （１）炭化珪素を主成分とする焼結体、（２）炭化珪素
と金属シリコンとの混合焼結体、（３）窒化珪素、窒化
アルミニウム等の絶縁性セラミックス、および（４）黒
鉛。11. The corrosion-resistant part for an etching apparatus according to claim 1, wherein said base material is selected from the following. (1) a sintered body containing silicon carbide as a main component; (2) a mixed sintered body of silicon carbide and metallic silicon; (3) an insulating ceramic such as silicon nitride and aluminum nitride; and (4) graphite.
（ａ）炭化珪素の組成比率が９０％以上であり、かつ相
対密度が９０％以上である焼結体あるいは（ｂ）炭化珪
素の組成比率が９０％以上であり、かつ相対密度が５６
％〜９０％である多孔質焼結体のいずれかである請求項
１１記載のエッチング装置用耐蝕部品。12. A sintered body containing a hydrocarbon as a main component,
(A) a sintered body in which the composition ratio of silicon carbide is 90% or more and the relative density is 90% or more; or (b) the composition ratio of silicon carbide is 90% or more and the relative density is 56%
The corrosion-resistant part for an etching apparatus according to claim 11, which is any one of a porous sintered body having a percentage of from about 90% to about 90%.
装置用チャンバーである請求項１１または１２記載のエ
ッチング装置用耐蝕部品。13. The corrosion-resistant part for an etching apparatus according to claim 11, wherein the corrosion-resistant part for an etching apparatus is a chamber for an etching apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000104544A JP2000355779A (en) | 1999-04-07 | 2000-04-06 | Corrosion resistant parts of etching device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11-100068 | 1999-04-07 | ||
| JP10006899 | 1999-04-07 | ||
| JP2000104544A JP2000355779A (en) | 1999-04-07 | 2000-04-06 | Corrosion resistant parts of etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000355779A true JP2000355779A (en) | 2000-12-26 |
Family
ID=26441158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000104544A Pending JP2000355779A (en) | 1999-04-07 | 2000-04-06 | Corrosion resistant parts of etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000355779A (en) |
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|---|---|---|---|---|
| JP2003034867A (en) * | 2001-07-27 | 2003-02-07 | Tokai Carbon Co Ltd | Tubular SiC molded body and method for producing the same |
| US6787446B2 (en) | 2001-08-07 | 2004-09-07 | Renesas Technology Corp. | Fabrication method of semiconductor integrated circuit device |
| JP2007081381A (en) * | 2005-08-18 | 2007-03-29 | Mitsubishi Materials Corp | Silicon ring for plasma etching equipment |
| JP2007081382A (en) * | 2005-08-18 | 2007-03-29 | Mitsubishi Materials Corp | Silicon ring for plasma etching equipment |
| WO2017115750A1 (en) * | 2015-12-28 | 2017-07-06 | 昭和電工株式会社 | METHOD FOR CLEANING SiC MONOCRYSTAL GROWTH FURNACE |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003034867A (en) * | 2001-07-27 | 2003-02-07 | Tokai Carbon Co Ltd | Tubular SiC molded body and method for producing the same |
| US6787446B2 (en) | 2001-08-07 | 2004-09-07 | Renesas Technology Corp. | Fabrication method of semiconductor integrated circuit device |
| JP2007081381A (en) * | 2005-08-18 | 2007-03-29 | Mitsubishi Materials Corp | Silicon ring for plasma etching equipment |
| JP2007081382A (en) * | 2005-08-18 | 2007-03-29 | Mitsubishi Materials Corp | Silicon ring for plasma etching equipment |
| WO2017115750A1 (en) * | 2015-12-28 | 2017-07-06 | 昭和電工株式会社 | METHOD FOR CLEANING SiC MONOCRYSTAL GROWTH FURNACE |
| CN108541278A (en) * | 2015-12-28 | 2018-09-14 | 昭和电工株式会社 | Cleaning method of SiC single crystal growth furnace |
| JPWO2017115750A1 (en) * | 2015-12-28 | 2018-10-18 | 昭和電工株式会社 | Cleaning method of SiC single crystal growth furnace |
| US11028474B2 (en) | 2015-12-28 | 2021-06-08 | Showa Denko K.K. | Method for cleaning SiC monocrystal growth furnace |
| CN108541278B (en) * | 2015-12-28 | 2022-03-08 | 昭和电工株式会社 | Cleaning method of SiC single crystal growth furnace |
| WO2020213847A1 (en) * | 2019-04-18 | 2020-10-22 | 주식회사 티씨케이 | Sic material and method for manufacturing same |
| JP2022522223A (en) * | 2019-04-18 | 2022-04-14 | トカイ カーボン コリア カンパニー，リミティド | SiC material and its manufacturing method |
| US11658060B2 (en) | 2019-04-18 | 2023-05-23 | Tokai Carbon Korea Co., Ltd | SiC material and method for manufacturing same |
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