JP2000505546A - 陰極スパッター極板の超音波検査法 - Google Patents
陰極スパッター極板の超音波検査法Info
- Publication number
- JP2000505546A JP2000505546A JP09529039A JP52903997A JP2000505546A JP 2000505546 A JP2000505546 A JP 2000505546A JP 09529039 A JP09529039 A JP 09529039A JP 52903997 A JP52903997 A JP 52903997A JP 2000505546 A JP2000505546 A JP 2000505546A
- Authority
- JP
- Japan
- Prior art keywords
- cracks
- size
- electrode plate
- plate
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007689 inspection Methods 0.000 title claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 84
- 239000002184 metal Substances 0.000 claims abstract description 84
- 238000000034 method Methods 0.000 claims abstract description 68
- 230000007547 defect Effects 0.000 claims abstract description 48
- 239000002243 precursor Substances 0.000 claims abstract description 24
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 21
- 239000007788 liquid Substances 0.000 claims abstract description 15
- 238000005259 measurement Methods 0.000 claims abstract description 8
- 239000002245 particle Substances 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 32
- 229910045601 alloy Inorganic materials 0.000 claims description 31
- 239000000956 alloy Substances 0.000 claims description 31
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 20
- 239000001257 hydrogen Substances 0.000 claims description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims description 19
- 238000001465 metallisation Methods 0.000 claims description 19
- 230000001066 destructive effect Effects 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 12
- 239000013067 intermediate product Substances 0.000 claims description 10
- 238000005336 cracking Methods 0.000 claims description 3
- 238000010998 test method Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 2
- 238000010187 selection method Methods 0.000 claims description 2
- 238000002592 echocardiography Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 description 13
- 239000010408 film Substances 0.000 description 12
- 239000010949 copper Substances 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 9
- 230000002950 deficient Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- 238000005266 casting Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 238000007711 solidification Methods 0.000 description 6
- 230000008023 solidification Effects 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000265 homogenisation Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 238000005242 forging Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000002604 ultrasonography Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010410 dusting Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- -1 oxides and nitrides Chemical class 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 241001676573 Minium Species 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000012043 crude product Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009658 destructive testing Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007922 dissolution test Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000005713 exacerbation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000005543 high-frequency ultrasonography Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002480 mineral oil Substances 0.000 description 1
- 235000010446 mineral oil Nutrition 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
- G01N29/11—Analysing solids by measuring attenuation of acoustic waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/30—Arrangements for calibrating or comparing, e.g. with standard objects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/01—Indexing codes associated with the measuring variable
- G01N2291/015—Attenuation, scattering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/023—Solids
- G01N2291/0231—Composite or layered materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/023—Solids
- G01N2291/0237—Thin materials, e.g. paper, membranes, thin films
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/028—Material parameters
- G01N2291/0289—Internal structure, e.g. defects, grain size, texture
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/04—Wave modes and trajectories
- G01N2291/044—Internal reflections (echoes), e.g. on walls or defects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/10—Number of transducers
- G01N2291/101—Number of transducers one transducer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/26—Scanned objects
- G01N2291/269—Various geometry objects
- G01N2291/2697—Wafer or (micro)electronic parts
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Acoustics & Sound (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physical Vapour Deposition (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.有効部分が超高純度のアルミニウム製または非常に純粋なベースのアルミニ ウム合金製である、集積回路または電子回路の金属被覆のための陰極スパッター 極板の検査方法において、非破壊的で内部亀裂に敏感な、金属の内部健全性検査 方法を用いて、 ・検査する極板の亀裂のサイズを測定し、 ・前記の検査すべき極板の単位体積あたりの内部亀裂のサイズと数を数え、 ・固体または液体粒子の再付着による金属被覆基盤の不良率を5%未満にするこ とができる極板を、亀裂のサイズと数の分布に基づく基準にしたがって選択する : ことを特徴とする方法。 2.請求項1に記載の方法において、基準極板と比較して、あるいは人工基準欠 陥と比較して、検査する極板の亀裂のサイズを測定することを特徴とする方法。 3.請求項1または2に記載の方法において、極板の有効金属1立方センチメー トルあたりサイズが0.1mmを超える亀裂が0.1以下の、亀裂密度を示す極 板を選択することを特徴とする方法。 4.請求項1から3のいずれか一つに記載の方法において、 亀裂に敏感な非破壊的方法が超音波法から選択されることを特徴とする方法。 5.請求項4に記載の方法において、5MHzを超える、好適には10と50M Hzの間の作業周波数で作動する超音波センサーを選択し、極板の表面に対する 欠陥の位置に応じて、液体に浸漬した極板内の亀裂を模倣した、既知の寸法の人 工欠陥の超音波反響振幅を示す適切な測定チャンネルの調節した後、 ・超音波検査によってパラメータ化した所与の体積内の人工欠陥によって得られ た超音波反響の振幅と比較して、検査されるそれぞれの極板の亀裂のサイズを測 定し、 ・前記の検査すべき極板の単位体積あたりの内部亀裂のサイズと数を数え、 ・非常に高い精細度のエッチを必要とする用途分野のために、極板の有効金属1 立方センチメートルあたりサイズが0.1mmを超える亀裂が0.1以下の亀裂 の密度を示す極板を選択する: ことを特徴とする方法。 6.請求項1から5のいずれか一つに記載の方法において、極板の有効金属1立 方センチメートルあたりサイズが0.1mmを超える亀裂が0.01未満の亀裂 の密度を示す極板を選択する: ことを特徴とする方法。 7.請求項5に記載の方法において、10から25MHzの間に含まれ、好適に は15MHzを中心とする超音波センサーの作動周波数を選択した後、極板の有 効金属の1立方センチメートルあたり、サイズが0.1mmを超える内部亀裂が なく、0.04mmを超えるサイズの亀裂が0.1未満の極板を選択することを特 徴とする方法。 8.請求項7に記載の方法において、極板の有効金属の1立方センチメートルあ たり、サイズが0.1mmを超える内部亀裂がなく、0.04mmを超えるサイズ の亀裂が0.05未満の極板を選択することを特徴とする方法。 9.請求項1から3のいずれか一つに記載の方法において、亀裂に敏感な方法が X線による方法から選択されることを特徴とする方法。 10.請求項1から3のいずれか一つに記載の方法において、亀裂に敏感な方法 が渦電流による方法から選択されることを特徴とする方法。 11.有効部分が超高純度のアルミニウム製または非常に純粋なベースのアルミ ニウム合金製である、集積回路または電子回路の金属被覆のための、陰極スパッ ター極板において、固体または液体粒子の再付着による金属被覆基盤の不良率が 5%未満になるように内部亀裂に敏感な、非破壊的な金属の内部健全性検査方法 を用いる適切な選択方法によって選択されることを特徴とする極板。 12.請求項11に従って選択された極板において、有効金属1立方センチメー トルあたり、サイズが0.1mmを超える亀裂が0.1以下で、好適には有効金 属1立方センチメートルあたり亀裂が0.01未満含まれることを特徴とする極 板。 13.請求項11と12のいずれか一つに記載の選択された極板において、それ らの溶解または吸蔵水素含有率が0.20ppm未満、好適には0.10ppm未満で あることを特徴とする極板。 14.請求項11から13のいずれか一つに記載の選択された極板において、有 効金属1cm3あたりサイズが0.1mmを超える耐熱性含有物の含有率が0.1 未満で、2μmを超えるサイズの含有物の総含有率が合金1kgあたり5mg未満 であることを特徴とする極板。 15.請求項11から14のいずれか一つに記載の選択された極板において、有 効金属1立方センチメートルあたりサイズが0.1mmを超える内部亀裂がなく 、0.04mmを超えるサイズの亀裂が0.05未満含まれ、2μmを超えるサイ ズの含有物の総含有率が、合金1kgあたり4mg未満であることを特徴とする 極板。 16.請求項11から15のいずれか一つに記載の選択された極板において、請 求項1から10のいずれか一つに記載の方法によって選択されたことを特徴とす る極板。 17.有効部分が超高純度のアルミニウム製または非常に純粋なベースのアルミ ニウム合金製である、集積回路または電子回路の金属被覆のための、陰極スパッ ター極板の前駆体において、前記前駆体が超高純度のアルミニウム製または非常 に純粋なベースのアルミニウム合金製で100cm3あたり、サイズが0.04mm を超える亀裂を10未満含んでいることを特徴とする前駆体。 18.請求項11から16のいずれか一つに記載の選択された極板において、内 部亀裂に敏感な、非破壊的な金属の内部健全性検査方法を用いる適切な方法によ って選択された前駆体から得られることを特徴とする極板。 19.請求項11から16のいずれか一つに記載の選択された極板において、請 求項17に記載の前駆体から得られることを特徴とする極板。 20.請求項11から16のいずれか一つに記載の選択された極板において、内 部亀裂に敏感な、非破壊的な金属の内部健全性検査方法を用いる適切な方法によ って選択された中間製品から得られることを特徴とする極板。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR96/01990 | 1996-02-13 | ||
| FR9601990A FR2744805B1 (fr) | 1996-02-13 | 1996-02-13 | Cibles de pulverisation cathodique selectionnees par controle ultrasons pour leur faible taux d'emissions de particules |
| PCT/FR1996/001959 WO1997030348A1 (fr) | 1996-02-13 | 1996-12-09 | Procede de controle par ultrasons des cibles de pulverisation cathodique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000505546A true JP2000505546A (ja) | 2000-05-09 |
| JP3803382B2 JP3803382B2 (ja) | 2006-08-02 |
Family
ID=9489320
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11524296A Expired - Lifetime JP3789976B2 (ja) | 1996-02-13 | 1996-04-15 | 超音波検査法 |
| JP52903997A Expired - Lifetime JP3803382B2 (ja) | 1996-02-13 | 1996-12-09 | 陰極スパッター極板の超音波検査法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11524296A Expired - Lifetime JP3789976B2 (ja) | 1996-02-13 | 1996-04-15 | 超音波検査法 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US5955673A (ja) |
| EP (1) | EP0880694B1 (ja) |
| JP (2) | JP3789976B2 (ja) |
| KR (1) | KR100467304B1 (ja) |
| CN (1) | CN1113236C (ja) |
| DE (1) | DE69626043T2 (ja) |
| FR (1) | FR2744805B1 (ja) |
| TW (1) | TW363231B (ja) |
| WO (1) | WO1997030348A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012102380A (ja) * | 2010-11-11 | 2012-05-31 | Ulvac Japan Ltd | スパッタリング用ターゲット材料の検査方法及びスパッタリングターゲットの製造方法 |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2756572B1 (fr) | 1996-12-04 | 1999-01-08 | Pechiney Aluminium | Alliages d'aluminium a temperature de recristallisation elevee utilisee dans les cibles de pulverisation cathodiques |
| JP3755559B2 (ja) * | 1997-04-15 | 2006-03-15 | 株式会社日鉱マテリアルズ | スパッタリングターゲット |
| US6001227A (en) * | 1997-11-26 | 1999-12-14 | Applied Materials, Inc. | Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target |
| WO1999064854A1 (en) * | 1998-06-09 | 1999-12-16 | Tosoh Smd, Inc. | Method and apparatus for quantitative sputter target cleanliness characterization |
| US6318178B1 (en) * | 1999-01-20 | 2001-11-20 | Sanyo Special Steel Co., Ltd. | Cleanliness evaluation method for metallic materials based on ultrasonic flaw detection and metallic material affixed with evaluation of cleanliness |
| US6423161B1 (en) | 1999-10-15 | 2002-07-23 | Honeywell International Inc. | High purity aluminum materials |
| US6269699B1 (en) * | 1999-11-01 | 2001-08-07 | Praxair S. T. Technology, Inc. | Determination of actual defect size in cathode sputter targets subjected to ultrasonic inspection |
| US20020184970A1 (en) * | 2001-12-13 | 2002-12-12 | Wickersham Charles E. | Sptutter targets and methods of manufacturing same to reduce particulate emission during sputtering |
| JP4981233B2 (ja) * | 2000-05-11 | 2012-07-18 | トーソー エスエムディー,インク. | 音波の位相変化の検出を使用する、スパッターターゲット清浄度の非破壊評価のための方法と装置 |
| US6439054B1 (en) * | 2000-05-31 | 2002-08-27 | Honeywell International Inc. | Methods of testing sputtering target materials |
| US6520018B1 (en) * | 2000-11-17 | 2003-02-18 | Enertec Mexico, S.R.L. De C.V. | Ultrasonic inspection method for lead-acid battery terminal posts |
| CN100437883C (zh) * | 2001-03-27 | 2008-11-26 | Apit股份有限公司 | 等离子体表面处理的方法以及实现该方法的设备 |
| US7087142B2 (en) | 2001-04-04 | 2006-08-08 | Tosoh Smd, Inc. | Method for determining a critical size of an inclusion in aluminum or aluminum alloy sputtering target |
| KR100923000B1 (ko) * | 2001-08-09 | 2009-10-22 | 토소우 에스엠디, 인크 | 크기와 위치에 의해 분류되는 흠의 형태에 의한 타켓 청정도 특성을 비파괴적으로 결정하기 위한 방법 및 장치 |
| US6865948B1 (en) | 2002-01-29 | 2005-03-15 | Taiwan Semiconductor Manufacturing Company | Method of wafer edge damage inspection |
| US6887355B2 (en) * | 2002-10-31 | 2005-05-03 | Headway Technologies, Inc. | Self-aligned pole trim process |
| US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
| US8790499B2 (en) * | 2005-11-25 | 2014-07-29 | Applied Materials, Inc. | Process kit components for titanium sputtering chamber |
| US20070215463A1 (en) * | 2006-03-14 | 2007-09-20 | Applied Materials, Inc. | Pre-conditioning a sputtering target prior to sputtering |
| US8968536B2 (en) * | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
| US7901552B2 (en) | 2007-10-05 | 2011-03-08 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
| CN101639462B (zh) * | 2009-06-16 | 2011-12-21 | 宁波江丰电子材料有限公司 | 靶材的检测方法 |
| CN102666912B (zh) * | 2009-12-25 | 2015-02-25 | 吉坤日矿日石金属株式会社 | 粉粒产生少的溅射靶及该靶的制造方法 |
| KR101280814B1 (ko) * | 2010-05-12 | 2013-07-05 | 삼성코닝정밀소재 주식회사 | 알루미늄이 함유된 산화아연계 스퍼터링 타겟 및 타겟의 불량 판정방법 |
| US20150265893A1 (en) * | 2014-03-01 | 2015-09-24 | Louis A. Ledoux, JR. | System and Methods for Baseball Bat Construction |
| JP6263665B1 (ja) * | 2017-01-24 | 2018-01-17 | 住友化学株式会社 | 擬似欠陥サンプルおよびその製造方法、超音波探傷測定条件の調整方法、ターゲット素材の検査方法、スパッタリングターゲットの製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4366713A (en) * | 1981-03-25 | 1983-01-04 | General Electric Company | Ultrasonic bond testing of semiconductor devices |
| US4741212A (en) * | 1986-07-31 | 1988-05-03 | General Electric Company | Method for determining structural defects in semiconductor wafers by ultrasonic microscopy |
| JPH0833378B2 (ja) * | 1987-01-12 | 1996-03-29 | 株式会社明電舎 | セラミツク半導体基板の検査装置 |
| ATE65265T1 (de) * | 1987-08-26 | 1991-08-15 | Balzers Hochvakuum | Verfahren zur aufbringung von schichten auf substraten und vakuumbeschichtungsanlage zur durchfuehrung des verfahrens. |
| FR2664618B1 (fr) * | 1990-07-10 | 1993-10-08 | Pechiney Aluminium | Procede de fabrication de cathodes pour pulverisation cathodique a base d'aluminium de tres haute purete. |
| US5406850A (en) * | 1993-01-14 | 1995-04-18 | Tosoh Smd, Inc. | Method of non-destructively testing a sputtering target |
| US5584972A (en) * | 1995-02-01 | 1996-12-17 | Sony Corporation | Plasma noise and arcing suppressor apparatus and method for sputter deposition |
-
1996
- 1996-02-13 FR FR9601990A patent/FR2744805B1/fr not_active Expired - Lifetime
- 1996-04-12 US US08/631,365 patent/US5955673A/en not_active Expired - Lifetime
- 1996-04-15 JP JP11524296A patent/JP3789976B2/ja not_active Expired - Lifetime
- 1996-12-09 CN CN96199989A patent/CN1113236C/zh not_active Expired - Lifetime
- 1996-12-09 KR KR10-1998-0706228A patent/KR100467304B1/ko not_active Expired - Lifetime
- 1996-12-09 JP JP52903997A patent/JP3803382B2/ja not_active Expired - Lifetime
- 1996-12-09 WO PCT/FR1996/001959 patent/WO1997030348A1/fr not_active Ceased
- 1996-12-09 EP EP96941722A patent/EP0880694B1/fr not_active Expired - Lifetime
- 1996-12-09 DE DE69626043T patent/DE69626043T2/de not_active Expired - Lifetime
- 1996-12-09 US US08/762,415 patent/US5887481A/en not_active Expired - Lifetime
-
1997
- 1997-01-03 TW TW086100016A patent/TW363231B/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012102380A (ja) * | 2010-11-11 | 2012-05-31 | Ulvac Japan Ltd | スパッタリング用ターゲット材料の検査方法及びスパッタリングターゲットの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US5887481A (en) | 1999-03-30 |
| JPH09229913A (ja) | 1997-09-05 |
| TW363231B (en) | 1999-07-01 |
| WO1997030348A1 (fr) | 1997-08-21 |
| CN1113236C (zh) | 2003-07-02 |
| EP0880694A1 (fr) | 1998-12-02 |
| DE69626043T2 (de) | 2003-10-23 |
| JP3803382B2 (ja) | 2006-08-02 |
| KR100467304B1 (ko) | 2005-06-20 |
| EP0880694B1 (fr) | 2003-01-29 |
| KR19990082495A (ko) | 1999-11-25 |
| FR2744805B1 (fr) | 1998-03-20 |
| DE69626043D1 (de) | 2003-03-06 |
| JP3789976B2 (ja) | 2006-06-28 |
| FR2744805A1 (fr) | 1997-08-14 |
| US5955673A (en) | 1999-09-21 |
| CN1209201A (zh) | 1999-02-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2000505546A (ja) | 陰極スパッター極板の超音波検査法 | |
| TW467958B (en) | Improved target for use in magnetron sputtering of aluminum for forming metalliztion films having low defect densities and methods for manufacturing and using such target | |
| Kowal et al. | In situ atomic force microscopy observations of the corrosion behavior of aluminum‐copper alloys | |
| Bruemmer et al. | High‐resolution analytical electron microscopy characterization of corrosion and cracking at buried interfaces | |
| US11667983B2 (en) | Method for manufacturing metal plate | |
| US6269699B1 (en) | Determination of actual defect size in cathode sputter targets subjected to ultrasonic inspection | |
| de Sousa Araujo et al. | An assessment of pitting corrosion in anodized aluminum alloys: It might not be what it seems | |
| US7712514B2 (en) | Sputter targets and methods of manufacturing same to reduce particulate emission during sputtering | |
| d'Heurle et al. | Electrotransport in copper alloy films and the defect mechanism in grain boundary diffusion | |
| JP3755552B2 (ja) | アルミニウムまたはアルミニウム合金スパッタリングターゲット | |
| JP4709358B2 (ja) | スパッタリングターゲットとそれを用いたスパッタリング装置、薄膜、および電子部品 | |
| CA2245511C (fr) | Procede de controle par ultrasons des cibles de pulverisation cathodique | |
| KR100841915B1 (ko) | 알루미늄 또는 알루미늄 합금 스퍼터링 타겟 내의알루미늄 산화물 함유물에 대한 임계 크기 결정 방법 | |
| JP5368663B2 (ja) | スパッターリング時の粒子状放出物を少なくするためのスパッターターゲットとそれを製造する方法 | |
| Yakovlev et al. | Study of adhesion characteristic of a surface alloy formed by a low-energy high-current electron beam | |
| Gilman | Defect Control in High Purity Metals for< 0.25 μm Interconnect Applications | |
| Braterman et al. | Examination of Various Soldered Surfaces and Electronic Components by Confocal Microscopy | |
| Alani et al. | Recent Advances in Broad Ion Beam Based Techniques/Instrumentation for SEM Specimen Preparation of Semiconductors | |
| Yang | Electrostatic adhesion testing of metallizations on silicon substrates | |
| Ricker | Examination of the Influence of Lithium on the Repassivation Rate of Aluminum Alloys |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050111 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050405 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A132 Effective date: 20050906 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051205 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060228 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060303 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20060418 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20060508 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090512 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100512 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110512 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110512 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120512 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120512 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130512 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140512 Year of fee payment: 8 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |