JP2000508836A - 感光性画素のアレイ - Google Patents

感光性画素のアレイ

Info

Publication number
JP2000508836A
JP2000508836A JP10529238A JP52923898A JP2000508836A JP 2000508836 A JP2000508836 A JP 2000508836A JP 10529238 A JP10529238 A JP 10529238A JP 52923898 A JP52923898 A JP 52923898A JP 2000508836 A JP2000508836 A JP 2000508836A
Authority
JP
Japan
Prior art keywords
layer
pixel
capacitor
photodiode
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP10529238A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000508836A5 (2
Inventor
キャサリン ジェーン カーリング
ニール クリストファー バード
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Publication of JP2000508836A publication Critical patent/JP2000508836A/ja
Publication of JP2000508836A5 publication Critical patent/JP2000508836A5/ja
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP10529238A 1997-02-13 1998-02-05 感光性画素のアレイ Abandoned JP2000508836A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9702991.2A GB9702991D0 (en) 1997-02-13 1997-02-13 Array of photosensitive pixels
GB9702991.2 1997-02-13
PCT/IB1998/000146 WO1998036458A2 (en) 1997-02-13 1998-02-05 Array of photosensitive pixels

Publications (2)

Publication Number Publication Date
JP2000508836A true JP2000508836A (ja) 2000-07-11
JP2000508836A5 JP2000508836A5 (2) 2005-09-08

Family

ID=10807594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10529238A Abandoned JP2000508836A (ja) 1997-02-13 1998-02-05 感光性画素のアレイ

Country Status (6)

Country Link
US (1) US5973312A (2)
EP (1) EP0917735A2 (2)
JP (1) JP2000508836A (2)
KR (1) KR100530682B1 (2)
GB (1) GB9702991D0 (2)
WO (1) WO1998036458A2 (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018211905A1 (ja) * 2017-05-17 2018-11-22 アズビル株式会社 光電センサ

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002009328A (ja) * 2000-06-21 2002-01-11 Mitsutoyo Corp 受光素子アレイ及びその製造方法
US7408598B2 (en) 2002-02-20 2008-08-05 Planar Systems, Inc. Light sensitive display with selected interval of light sensitive elements
US7009663B2 (en) 2003-12-17 2006-03-07 Planar Systems, Inc. Integrated optical light sensitive active matrix liquid crystal display
US7053967B2 (en) 2002-05-23 2006-05-30 Planar Systems, Inc. Light sensitive display
AU2003294822A1 (en) * 2002-12-09 2004-06-30 Quantum Semiconductor Llc Cmos image sensor
US20080084374A1 (en) 2003-02-20 2008-04-10 Planar Systems, Inc. Light sensitive display
US7773139B2 (en) * 2004-04-16 2010-08-10 Apple Inc. Image sensor with photosensitive thin film transistors
KR101065756B1 (ko) 2007-08-30 2011-09-19 한국과학기술원 수직 채널 영역을 갖는 이미지 소자 및 그 제조방법
US9310923B2 (en) 2010-12-03 2016-04-12 Apple Inc. Input device for touch sensitive devices
KR101257699B1 (ko) * 2011-02-07 2013-04-24 삼성전자주식회사 방사선 디텍터 및 그 제조방법
US9329703B2 (en) 2011-06-22 2016-05-03 Apple Inc. Intelligent stylus
US8928635B2 (en) 2011-06-22 2015-01-06 Apple Inc. Active stylus
US8638320B2 (en) 2011-06-22 2014-01-28 Apple Inc. Stylus orientation detection
US9652090B2 (en) 2012-07-27 2017-05-16 Apple Inc. Device for digital communication through capacitive coupling
US9176604B2 (en) 2012-07-27 2015-11-03 Apple Inc. Stylus device
US9557845B2 (en) 2012-07-27 2017-01-31 Apple Inc. Input device for and method of communication with capacitive devices through frequency variation
US10048775B2 (en) 2013-03-14 2018-08-14 Apple Inc. Stylus detection and demodulation
US10845901B2 (en) 2013-07-31 2020-11-24 Apple Inc. Touch controller architecture
US10061449B2 (en) 2014-12-04 2018-08-28 Apple Inc. Coarse scan and targeted active mode scan for touch and stylus
US10474277B2 (en) 2016-05-31 2019-11-12 Apple Inc. Position-based stylus communication
CN110993644A (zh) * 2019-11-06 2020-04-10 深圳市华星光电半导体显示技术有限公司 Oled显示面板及制备方法
US12153764B1 (en) 2020-09-25 2024-11-26 Apple Inc. Stylus with receive architecture for position determination

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2593343B1 (fr) * 1986-01-20 1988-03-25 Thomson Csf Matrice d'elements photosensibles et son procede de fabrication, procede de lecture associe, et application de cette matrice a la prise de vue d'images
JP3142327B2 (ja) * 1991-02-05 2001-03-07 株式会社東芝 固体撮像装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018211905A1 (ja) * 2017-05-17 2018-11-22 アズビル株式会社 光電センサ

Also Published As

Publication number Publication date
KR20000064895A (ko) 2000-11-06
WO1998036458A2 (en) 1998-08-20
US5973312A (en) 1999-10-26
EP0917735A2 (en) 1999-05-26
GB9702991D0 (en) 1997-04-02
WO1998036458A3 (en) 1998-11-12
KR100530682B1 (ko) 2006-03-03

Similar Documents

Publication Publication Date Title
JP2000508836A (ja) 感光性画素のアレイ
JP3607305B2 (ja) 大領域能動マトリックス配列を製造する方法
TW503573B (en) Imager structure
US6495387B2 (en) Electronic devices including micromechanical switches
EP0768561B1 (en) Reflection-type display apparatus
EP2178123B1 (en) ESD induced artifact reduction design for a thin film transistor image sensor array
US6740884B2 (en) Imaging array and methods for fabricating same
EP1332519B1 (fr) Matrice active tft pour capteur optique comportant une couche semi-conductrice photosensible, et capteur optique comportant une telle matrice
AU1096797A (en) Forming contacts on semiconductor substrates for radiation detectors and imaging devices
JP4600964B2 (ja) ゲーテッドフォトダイオードを有する固体イメージャ及びその製造方法
US20080199788A1 (en) Manufacturing method of thin film transistor array panel using an optical mask
CN1146052C (zh) 用于反射lcd显示的像素结构及其屏幕显示系统
KR20010082851A (ko) 엑스레이 디텍터용 어레이기판 제조방법
EP1351310A2 (en) Imaging array and methods for fabricating same
US6054746A (en) Image sensor and its manufacture
KR100229371B1 (ko) 반사형 액정 디스플레이 및 이의 형성 방법
US5693567A (en) Separately etching insulating layer for contacts within array and for peripheral pads
US6559506B1 (en) Imaging array and methods for fabricating same
JP3964017B2 (ja) 放射撮像装置用のコンタクト・パッド
KR100783702B1 (ko) 박막 트랜지스터 기판 및 그 제조 방법
US20070082434A1 (en) Manufacturing of thin film transistor array panel
US7541225B2 (en) Method of manufacturing a thin film transistor array panel that includes using chemical mechanical polishing of a conductive film to form a pixel electrode connected to a drain electrode
JP3788740B2 (ja) アクティブマトリクス基板および電磁波検出器
JP4947404B2 (ja) フォトセンサ及びその製造方法
US20060054889A1 (en) Thin film transistor array panel

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050202

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050202

A762 Written abandonment of application

Free format text: JAPANESE INTERMEDIATE CODE: A762

Effective date: 20061005