JP2000515980A - ガスセンサのハイブリッド集積回路 - Google Patents
ガスセンサのハイブリッド集積回路Info
- Publication number
- JP2000515980A JP2000515980A JP10517430A JP51743098A JP2000515980A JP 2000515980 A JP2000515980 A JP 2000515980A JP 10517430 A JP10517430 A JP 10517430A JP 51743098 A JP51743098 A JP 51743098A JP 2000515980 A JP2000515980 A JP 2000515980A
- Authority
- JP
- Japan
- Prior art keywords
- jumper
- substrate
- film
- gas sensor
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 230000002093 peripheral effect Effects 0.000 claims abstract description 27
- 239000004020 conductor Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000004458 analytical method Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 238000009413 insulation Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- -1 H 2 S Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/122—Circuits particularly adapted therefor, e.g. linearising circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
- B01J20/281—Sorbents specially adapted for preparative, analytical or investigative chromatography
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/02—Column chromatography
- G01N30/60—Construction of the column
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2220/00—Aspects relating to sorbent materials
- B01J2220/50—Aspects relating to the use of sorbent or filter aid materials
- B01J2220/54—Sorbents specially adapted for analytical or investigative chromatography
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/02—Column chromatography
- G01N30/60—Construction of the column
- G01N30/6034—Construction of the column joining multiple columns
- G01N30/6043—Construction of the column joining multiple columns in parallel
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Organic Chemistry (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.機械的に強い周辺部(2)とそこから熱的に絶縁した中心部分(3)とから なる基板(1)を備え、両者の部分がジャンパー(4)によって相互に接続して おり、基板(1)の周辺部(2)が、フィルムボンディングパッド(5)を備え 、中心部分(3)が、フィルムヒーター(6)と、ガスに敏感なフィルム(7) と、ガス敏感なフィルム(7)の抵抗を測定するための回路のフィルム電極(8 )とを支え、これらの全ての構成要素は、ジャンパー(4)上に位置決めしたフ ィルムコンダクター(9)によってボンディングパッド(5)と電気的に接続す るガスセンサのハイブリッド集積回路において、 基板(1)の周辺部(2)が、リング形であり、その中心部分(3)が、3つ のジャンパー(4)と120度離した、周辺部(2)と電気的に接続したディス ク形であり、ジャンパー(4)が周辺部(2)と接続する場所で120度で配置 した分岐(10)を有し、中心部分(3)の直径と周辺部(2)の内径との比が 0.2〜0.4であり、回路の中心から分岐へのジャンパー(4)の長さと周辺 部(2)の内径との比が0.6〜0.8であり、ジャンパー(4)の幅が0.0 5mm〜0.15mmであり、ジャンパー(4)の厚さと基板(1)の中心部分 (3)の厚さが、0.15mm〜0.25mmであることを特徴とするガスセン サのハイブリッド集積回路。 2.フィルムヒーター(6)は、基板(1)の中心部分(3)のおもて面に設け たくぼみ(11)の中に配置することを特徴とする請求項1記載のガスセンサの ハイブリッド集積回路。 3.基板(1)の周辺部(2)は、スルーホール(12)を有し、パッケージ( 14)の内部導線(13)が基板(1)の周辺部(2)の穴(12)の中に配置 してボンディングパッド(17)と電気的に接続するように、パッケージ(14 )の金属ベース(15)と固定しており、パッケージ(14)のカバー(18) は、分析時にメディアが入るための穴(19)を有することを特徴とする請求項 1又は請求項2記載のガスセンサのハイブリッド集積回路。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/RU1996/000291 WO1998015818A1 (en) | 1996-10-10 | 1996-10-10 | Hybrid integrated circuit for a gas sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000515980A true JP2000515980A (ja) | 2000-11-28 |
| JP3553613B2 JP3553613B2 (ja) | 2004-08-11 |
Family
ID=20130046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51743098A Expired - Fee Related JP3553613B2 (ja) | 1996-10-10 | 1996-10-10 | ガスセンサのハイブリッド集積回路 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6202467B1 (ja) |
| JP (1) | JP3553613B2 (ja) |
| RU (1) | RU2137117C1 (ja) |
| WO (1) | WO1998015818A1 (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2002355079C1 (en) * | 2001-07-16 | 2008-03-06 | Sensor Tech, Inc. | Sensor device and method for qualitative and quantitative analysis of gas phase substances |
| US6719950B2 (en) * | 2001-11-14 | 2004-04-13 | Robert Bosch Corporation | Miniaturized exhaust gas sensor |
| DE112005000248B4 (de) * | 2004-01-27 | 2015-04-30 | H2Scan Corp. | Verfahren und Vorrichtung zur thermischen Isolation eines Gassensors |
| DE112005000251B4 (de) * | 2004-01-27 | 2016-03-10 | H2Scan Corp. | Isolierte Gassensoranordnung |
| US20050178186A1 (en) * | 2004-02-13 | 2005-08-18 | Omegapoint Systems, Llc | Gas sensor |
| RU2005113962A (ru) * | 2005-05-12 | 2006-11-20 | Сергей Юрьевич Гогиш-Клушин (RU) | Измерительный элемент микроэлектронного датчика |
| DE102005058830B4 (de) * | 2005-12-09 | 2021-03-04 | Robert Bosch Gmbh | Sensor mit Thermogradientenpumpe |
| DE102005058832B4 (de) * | 2005-12-09 | 2021-03-18 | Robert Bosch Gmbh | Beheizter H2-Sensor |
| KR20090064693A (ko) * | 2007-12-17 | 2009-06-22 | 한국전자통신연구원 | 마이크로 가스 센서 및 그 제작 방법 |
| RU199011U1 (ru) * | 2019-11-21 | 2020-08-07 | федеральное государственное бюджетное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет МИФИ" | Газовый сенсор |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4347732A (en) * | 1980-08-18 | 1982-09-07 | Leary David J | Gas monitoring apparatus |
| EP0102067B1 (en) * | 1982-08-27 | 1988-08-17 | Kabushiki Kaisha Toshiba | Co gas detecting device and circuit for driving the same |
| CA1216330A (en) * | 1983-02-07 | 1987-01-06 | Junji Manaka | Low power gas detector |
| US4596975A (en) * | 1984-05-31 | 1986-06-24 | Sierra Monitor Corporation | Thermally insulative mounting with solid state device |
| US4706493A (en) * | 1985-12-13 | 1987-11-17 | General Motors Corporation | Semiconductor gas sensor having thermally isolated site |
| US4928513A (en) * | 1986-07-29 | 1990-05-29 | Sharp Kabushiki Kaisha | Sensor |
| DE3743398A1 (de) * | 1987-12-21 | 1989-07-06 | Siemens Ag | Aufhaengung fuer eine sensoranordnung zum nachweis von gasen durch exotherme katalytische reaktionen |
| FR2625561B1 (fr) * | 1988-01-04 | 1993-08-06 | Coreci | Structure de support pour capteur de gaz |
| JPH01299452A (ja) * | 1988-05-27 | 1989-12-04 | Ricoh Co Ltd | 4端子検出型ガス検出装置 |
| FI82774C (fi) * | 1988-06-08 | 1991-04-10 | Vaisala Oy | Integrerad uppvaermbar sensor. |
| DE3844023A1 (de) * | 1988-12-27 | 1990-06-28 | Hartmann & Braun Ag | Sensor zur bestimmung der gaskonzentration in einem gasgemisch durch messung der waermetoenung |
| DE4008150A1 (de) * | 1990-03-14 | 1991-09-19 | Fraunhofer Ges Forschung | Katalytischer gassensor |
| EP0486179A3 (en) * | 1990-11-12 | 1992-07-08 | City Technology Limited | Gas diffusion control assembly |
| US5367283A (en) * | 1992-10-06 | 1994-11-22 | Martin Marietta Energy Systems, Inc. | Thin film hydrogen sensor |
| US5605612A (en) * | 1993-11-11 | 1997-02-25 | Goldstar Electron Co., Ltd. | Gas sensor and manufacturing method of the same |
| GB9501461D0 (en) * | 1994-06-20 | 1995-03-15 | Capteur Sensors & Analysers | Detection of ozone |
| US5707148A (en) * | 1994-09-23 | 1998-01-13 | Ford Global Technologies, Inc. | Catalytic calorimetric gas sensor |
| KR100332742B1 (ko) * | 1994-10-26 | 2002-11-23 | 엘지전자주식회사 | 가스센서의제조방법 |
| US5744697A (en) * | 1995-08-16 | 1998-04-28 | J And N Associates, Inc. | Gas sensor with conductive housing portions |
| US5821402A (en) * | 1996-03-11 | 1998-10-13 | Tokyo Gas Co., Ltd. | Thin film deposition method and gas sensor made by the method |
| FR2746183B1 (fr) * | 1996-03-14 | 1998-06-05 | Dispositif capteur chimique a semiconducteur et procede de formation d'un dispositif capteur chimique a semiconducteur | |
| US5659127A (en) * | 1996-08-26 | 1997-08-19 | Opto Tech Corporation | Substrate structure of monolithic gas sensor |
-
1996
- 1996-10-10 WO PCT/RU1996/000291 patent/WO1998015818A1/ru not_active Ceased
- 1996-10-10 US US09/091,255 patent/US6202467B1/en not_active Expired - Fee Related
- 1996-10-10 RU RU98112770/25A patent/RU2137117C1/ru not_active IP Right Cessation
- 1996-10-10 JP JP51743098A patent/JP3553613B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO1998015818A1 (en) | 1998-04-16 |
| US6202467B1 (en) | 2001-03-20 |
| RU2137117C1 (ru) | 1999-09-10 |
| JP3553613B2 (ja) | 2004-08-11 |
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