JP2001500631A - 高エネルギ照射下で低い収縮性を呈する石英 - Google Patents

高エネルギ照射下で低い収縮性を呈する石英

Info

Publication number: JP2001500631A
Authority: JP; Japan
Prior art keywords: chamber; temperature; stepper lens; stepper; sintering
Prior art date: 1996-08-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP10511953A

Other languages

English (en)

Japanese (ja)

Other versions

JP2001500631A5 (2

Inventor

エフボーレリー，ニコラス

ピーセワード，トーマス

スミス，チャーリーン

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Corning Inc

Original Assignee

Corning Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1996-08-29

Filing date

1997-08-27

Publication date

2001-01-16

Family has litigation

First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=21823466&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP2001500631(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

1997-08-27 Application filed by Corning Inc filed Critical Corning Inc

2001-01-16 Publication of JP2001500631A publication Critical patent/JP2001500631A/ja

2007-08-02 Publication of JP2001500631A5 publication Critical patent/JP2001500631A5/ja

Status Pending legal-status Critical Current

Links

VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 37
239000010453 quartz Substances 0.000 title description 3
239000005350 fused silica glass Substances 0.000 claims abstract description 37
238000000034 method Methods 0.000 claims description 24
239000011521 glass Substances 0.000 claims description 16
239000004071 soot Substances 0.000 claims description 12
230000007062 hydrolysis Effects 0.000 claims description 10
238000006460 hydrolysis reaction Methods 0.000 claims description 10
238000005245 sintering Methods 0.000 claims description 10
238000004519 manufacturing process Methods 0.000 claims description 9
239000002245 particle Substances 0.000 claims description 8
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
230000008569 process Effects 0.000 claims description 7
229910052710 silicon Inorganic materials 0.000 claims description 7
230000005855 radiation Effects 0.000 claims description 6
239000010703 silicon Substances 0.000 claims description 4
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
229910004298 SiO 2 Inorganic materials 0.000 claims description 3
239000000460 chlorine Substances 0.000 claims description 3
229910052801 chlorine Inorganic materials 0.000 claims description 3
239000000126 substance Substances 0.000 claims description 3
239000011248 coating agent Substances 0.000 claims description 2
238000000576 coating method Methods 0.000 claims description 2
230000006835 compression Effects 0.000 claims description 2
238000007906 compression Methods 0.000 claims description 2
230000003068 static effect Effects 0.000 claims description 2
239000008187 granular material Substances 0.000 claims 4
238000001035 drying Methods 0.000 claims 2
239000011261 inert gas Substances 0.000 claims 2
KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims 1
241000255777 Lepidoptera Species 0.000 claims 1
BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 1
125000000217 alkyl group Chemical group 0.000 claims 1
238000000151 deposition Methods 0.000 claims 1
238000010438 heat treatment Methods 0.000 claims 1
239000001307 helium Substances 0.000 claims 1
229910052734 helium Inorganic materials 0.000 claims 1
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
239000006060 molten glass Substances 0.000 claims 1
150000002894 organic compounds Chemical class 0.000 claims 1
230000000379 polymerizing effect Effects 0.000 claims 1
230000003287 optical effect Effects 0.000 abstract description 21
238000000206 photolithography Methods 0.000 abstract description 8
238000000280 densification Methods 0.000 abstract description 4
230000008859 change Effects 0.000 description 8
150000001875 compounds Chemical class 0.000 description 7
238000007711 solidification Methods 0.000 description 5
230000008023 solidification Effects 0.000 description 5
239000000463 material Substances 0.000 description 3
238000005259 measurement Methods 0.000 description 3
HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 3
-1 polymethylsiloxanes Polymers 0.000 description 3
235000012239 silicon dioxide Nutrition 0.000 description 3
LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
239000002210 silicon-based material Substances 0.000 description 3
238000010561 standard procedure Methods 0.000 description 3
229910002808 Si–O–Si Inorganic materials 0.000 description 2
230000004075 alteration Effects 0.000 description 2
238000000354 decomposition reaction Methods 0.000 description 2
239000010432 diamond Substances 0.000 description 2
KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
238000010494 dissociation reaction Methods 0.000 description 2
230000005593 dissociations Effects 0.000 description 2
HTDJPCNNEPUOOQ-UHFFFAOYSA-N hexamethylcyclotrisiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O1 HTDJPCNNEPUOOQ-UHFFFAOYSA-N 0.000 description 2
238000005305 interferometry Methods 0.000 description 2
239000000203 mixture Substances 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
229910052757 nitrogen Inorganic materials 0.000 description 2
125000004433 nitrogen atom Chemical group N* 0.000 description 2
125000004430 oxygen atom Chemical group O* 0.000 description 2
230000002035 prolonged effect Effects 0.000 description 2
239000002994 raw material Substances 0.000 description 2
238000003980 solgel method Methods 0.000 description 2
FIADVASZMLCQIF-UHFFFAOYSA-N 2,2,4,4,6,6,8,8-octamethyl-1,3,5,7,2,4,6,8-tetrazatetrasilocane Chemical compound C[Si]1(C)N[Si](C)(C)N[Si](C)(C)N[Si](C)(C)N1 FIADVASZMLCQIF-UHFFFAOYSA-N 0.000 description 1
XMSXQFUHVRWGNA-UHFFFAOYSA-N Decamethylcyclopentasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 XMSXQFUHVRWGNA-UHFFFAOYSA-N 0.000 description 1
229910018557 Si O Inorganic materials 0.000 description 1
229910008072 Si-N-Si Inorganic materials 0.000 description 1
238000010521 absorption reaction Methods 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
238000009835 boiling Methods 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
229910052681 coesite Inorganic materials 0.000 description 1
238000002485 combustion reaction Methods 0.000 description 1
229910052906 cristobalite Inorganic materials 0.000 description 1
238000000586 desensitisation Methods 0.000 description 1
229910003460 diamond Inorganic materials 0.000 description 1
230000000694 effects Effects 0.000 description 1
230000007613 environmental effect Effects 0.000 description 1
230000004907 flux Effects 0.000 description 1
239000007789 gas Substances 0.000 description 1
UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
239000012535 impurity Substances 0.000 description 1
230000007774 longterm Effects 0.000 description 1
125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
229910017464 nitrogen compound Inorganic materials 0.000 description 1
CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
230000008447 perception Effects 0.000 description 1
230000000737 periodic effect Effects 0.000 description 1
238000000197 pyrolysis Methods 0.000 description 1
FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
229910052682 stishovite Inorganic materials 0.000 description 1
238000005979 thermal decomposition reaction Methods 0.000 description 1
238000011282 treatment Methods 0.000 description 1
229910052905 tridymite Inorganic materials 0.000 description 1
238000005019 vapor deposition process Methods 0.000 description 1

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/06—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/06—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
- C03B19/066—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction for the production of quartz or fused silica articles
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/10—Forming beads
- C03B19/1005—Forming solid beads
- C03B19/106—Forming solid beads by chemical vapour deposition; by liquid phase reaction
- C03B19/1065—Forming solid beads by chemical vapour deposition; by liquid phase reaction by liquid phase reactions, e.g. by means of a gel phase
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1453—Thermal after-treatment of the shaped article, e.g. dehydrating, consolidating, sintering
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C1/00—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
- C03C1/006—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels to produce glass through wet route
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/30—For glass precursor of non-standard type, e.g. solid SiH3F
- C03B2207/32—Non-halide
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/02—Pure silica glass, e.g. pure fused quartz
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2203/00—Production processes
- C03C2203/50—After-treatment
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S65/00—Glass manufacturing
- Y10S65/13—Computer control

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Organic Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Geochemistry & Mineralogy (AREA)
Life Sciences & Earth Sciences (AREA)
General Chemical & Material Sciences (AREA)
Dispersion Chemistry (AREA)
General Physics & Mathematics (AREA)
Health & Medical Sciences (AREA)
Public Health (AREA)
Epidemiology (AREA)
Environmental & Geological Engineering (AREA)
Thermal Sciences (AREA)
Optics & Photonics (AREA)
Toxicology (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Glass Compositions (AREA)
Glass Melting And Manufacturing (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

JP10511953A 1996-08-29 1997-08-27 高エネルギ照射下で低い収縮性を呈する石英 Pending JP2001500631A (ja)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US2499596P	1996-08-29	1996-08-29
US60/024,995		1996-08-29
PCT/US1997/015233 WO1998008775A1 (en)	1996-08-29	1997-08-27	Silica with low compaction under high energy irradiation

Publications (2)

Publication Number	Publication Date
JP2001500631A true JP2001500631A (ja)	2001-01-16
JP2001500631A5 JP2001500631A5 (2)	2007-08-02

Family

ID=21823466

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
JP10511953A Pending JP2001500631A (ja)	1996-08-29	1997-08-27	高エネルギ照射下で低い収縮性を呈する石英
JP10511954A Ceased JP2000517284A (ja)	1996-08-29	1997-08-27	石英ガラスのレーザ誘起圧密決定方法

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
JP10511954A Ceased JP2000517284A (ja)	1996-08-29	1997-08-27	石英ガラスのレーザ誘起圧密決定方法

Country Status (7)

Country	Link
US (2)	US6295841B1 (2)
EP (2)	EP0958255B1 (2)
JP (2)	JP2001500631A (2)
KR (2)	KR20000035913A (2)
DE (2)	DE69734675T2 (2)
RU (1)	RU2175647C2 (2)
WO (2)	WO1998008775A1 (2)

Cited By (1)

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JP2013075827A (ja) *	2005-11-07	2013-04-25	Corning Inc	デューテロキシルドープ石英ガラス、このガラスを有する光学部材及びリソグラフィシステム並びにこのガラスの作成方法

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EP0958255B1 (en) *	1996-08-29	2006-08-23	Corning Incorporated	Silica with low compaction under high energy irradiation
DE19840525A1 (de) *	1998-09-06	2000-03-09	Inst Neue Mat Gemein Gmbh	Verfahren zur Herstellung optischer Schichten von gleichmäßiger Schichtdicke
KR100824985B1 (ko) *	2001-09-11	2008-04-28	재단법인 포항산업과학연구원	투명 실리카 글래스 제조용 조성물 및 이를 이용한 실리카글래스의 제조 방법
AU2003275912A1 (en) *	2002-09-16	2004-04-08	Schott Ag	Determining the suitability of an optical material for the production of optical elements, corresponding device, and use of said material
EP1596424B1 (en)	2003-02-17	2016-11-02	Nikon Corporation	Exposure apparatus and method of exposing a pattern
DE10308466A1 (de) *	2003-02-21	2004-09-02	Carl Zeiss Smt Ag	Verfahren zur Herstellung von strahlungsresistentem Quarzglasmaterial und Quarzglasmaterial
US6992753B2 (en) *	2003-12-24	2006-01-31	Carl Zeiss Smt Ag	Projection optical system
US7934390B2 (en) *	2006-05-17	2011-05-03	Carl Zeiss Smt Gmbh	Method for manufacturing a lens of synthetic quartz glass with increased H2 content
CN102472980B (zh) *	2009-08-18	2015-02-25	卡尔蔡司Smt有限责任公司	极紫外微光刻的基底与反射镜以及制造它们的方法
DE102010052685A1 (de)	2010-11-26	2012-05-31	J-Fiber Gmbh	Verfahren zur Herstellung von strahlungsresistentem Quarzglasmaterial und danach hergestellte Quarzglaskörper
RU2594184C1 (ru) *	2015-03-31	2016-08-10	Федеральное государственное бюджетное учреждение науки Институт минералогии Уральского отделения Российской академии наук Институт минералогии УрО РАН	Способ получения изотропного кварцевого стекла
RU2731764C1 (ru) *	2019-12-30	2020-09-08	Акционерное общество "Научно-производственное предприятие "Медикон" (АО "НПП "Медикон")	Способ выплавки кварцевого стекла

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1997
- 1997-08-27 EP EP97944297A patent/EP0958255B1/en not_active Revoked
- 1997-08-27 WO PCT/US1997/015233 patent/WO1998008775A1/en not_active Ceased
- 1997-08-27 WO PCT/US1997/015234 patent/WO1998008776A1/en not_active Ceased
- 1997-08-27 EP EP97945187A patent/EP0960074B1/en not_active Expired - Lifetime
- 1997-08-27 KR KR1019997001649A patent/KR20000035913A/ko not_active Withdrawn
- 1997-08-27 JP JP10511953A patent/JP2001500631A/ja active Pending
- 1997-08-27 JP JP10511954A patent/JP2000517284A/ja not_active Ceased
- 1997-08-27 DE DE69734675T patent/DE69734675T2/de not_active Expired - Lifetime
- 1997-08-27 KR KR1019997001594A patent/KR20000035883A/ko not_active Withdrawn
- 1997-08-27 DE DE69736563T patent/DE69736563T2/de not_active Revoked
- 1997-08-27 RU RU99105849/03A patent/RU2175647C2/ru not_active IP Right Cessation
1999
- 1999-02-25 US US09/254,113 patent/US6295841B1/en not_active Expired - Fee Related
2001
- 2001-09-26 US US09/964,987 patent/US6543254B2/en not_active Expired - Fee Related

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2013075827A (ja) *	2005-11-07	2013-04-25	Corning Inc	デューテロキシルドープ石英ガラス、このガラスを有する光学部材及びリソグラフィシステム並びにこのガラスの作成方法
JP2017186254A (ja) *	2005-11-07	2017-10-12	コーニングインコーポレイテッド	デューテロキシルドープ石英ガラス、このガラスを有する光学部材及びリソグラフィシステム並びにこのガラスの作成方法

Also Published As

Publication number	Publication date
RU2175647C2 (ru)	2001-11-10
US20020036188A1 (en)	2002-03-28
US6543254B2 (en)	2003-04-08
KR20000035913A (ko)	2000-06-26
WO1998008775A1 (en)	1998-03-05
KR20000035883A (ko)	2000-06-26
EP0960074B1 (en)	2005-11-16
DE69736563D1 (de)	2006-10-05
DE69734675D1 (de)	2005-12-22
JP2000517284A (ja)	2000-12-26
US6295841B1 (en)	2001-10-02
DE69734675T2 (de)	2006-06-14
EP0960074A4 (en)	2002-09-04
EP0958255B1 (en)	2006-08-23
EP0960074A1 (en)	1999-12-01
EP0958255A1 (en)	1999-11-24
WO1998008776A1 (en)	1998-03-05
EP0958255A4 (en)	2004-03-31
DE69736563T2 (de)	2008-01-03

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