JP2002203852A - 絶縁膜の形成方法及び絶縁膜 - Google Patents

絶縁膜の形成方法及び絶縁膜

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Publication number
JP2002203852A
JP2002203852A JP2001000627A JP2001000627A JP2002203852A JP 2002203852 A JP2002203852 A JP 2002203852A JP 2001000627 A JP2001000627 A JP 2001000627A JP 2001000627 A JP2001000627 A JP 2001000627A JP 2002203852 A JP2002203852 A JP 2002203852A
Authority
JP
Japan
Prior art keywords
insulating film
interlayer insulating
bond
forming
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001000627A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002203852A5 (2
Inventor
Masazumi Matsuura
正純 松浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2001000627A priority Critical patent/JP2002203852A/ja
Priority to US09/963,648 priority patent/US20020090833A1/en
Priority to US10/196,181 priority patent/US6903027B2/en
Publication of JP2002203852A publication Critical patent/JP2002203852A/ja
Publication of JP2002203852A5 publication Critical patent/JP2002203852A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6926—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6548—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by forming intermediate materials, e.g. capping layers or diffusion barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2001000627A 2001-01-05 2001-01-05 絶縁膜の形成方法及び絶縁膜 Pending JP2002203852A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001000627A JP2002203852A (ja) 2001-01-05 2001-01-05 絶縁膜の形成方法及び絶縁膜
US09/963,648 US20020090833A1 (en) 2001-01-05 2001-09-27 Method of forming dielectric film and dielectric film
US10/196,181 US6903027B2 (en) 2001-01-05 2002-07-17 Method of forming dielectric film and dielectric film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001000627A JP2002203852A (ja) 2001-01-05 2001-01-05 絶縁膜の形成方法及び絶縁膜

Publications (2)

Publication Number Publication Date
JP2002203852A true JP2002203852A (ja) 2002-07-19
JP2002203852A5 JP2002203852A5 (2) 2008-02-14

Family

ID=18869380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001000627A Pending JP2002203852A (ja) 2001-01-05 2001-01-05 絶縁膜の形成方法及び絶縁膜

Country Status (2)

Country Link
US (2) US20020090833A1 (2)
JP (1) JP2002203852A (2)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002324837A (ja) * 2001-04-25 2002-11-08 Hitachi Ltd 半導体装置の製造方法
KR100439844B1 (ko) * 2002-07-24 2004-07-12 삼성전자주식회사 반도체 소자의 금속배선 형성 후의 감광막 제거방법
US7172965B2 (en) 2003-05-21 2007-02-06 Rohm Co., Ltd. Method for manufacturing semiconductor device
JP2008545253A (ja) * 2005-05-10 2008-12-11 ラム リサーチ コーポレーション 通常の低ｋ誘電性材料および／または多孔質の低ｋ誘電性材料の存在下でのレジスト剥離のための方法
US7563705B2 (en) 2002-02-14 2009-07-21 Nec Electronics Corporation Manufacturing method of semiconductor device
KR100976882B1 (ko) 2007-08-17 2010-08-18 도쿄엘렉트론가부시키가이샤 반도체 장치의 제조 방법 및 기억 매체

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6759098B2 (en) * 2000-03-20 2004-07-06 Axcelis Technologies, Inc. Plasma curing of MSQ-based porous low-k film materials
US6908846B2 (en) * 2002-10-24 2005-06-21 Lam Research Corporation Method and apparatus for detecting endpoint during plasma etching of thin films
US7416990B2 (en) * 2005-12-20 2008-08-26 Dongbu Electronics Co., Ltd. Method for patterning low dielectric layer of semiconductor device
US7553736B2 (en) * 2006-07-13 2009-06-30 Taiwan Semiconductor Manufacturing Company, Ltd. Increasing dielectric constant in local regions for the formation of capacitors
US20090078675A1 (en) * 2007-09-26 2009-03-26 Silverbrook Research Pty Ltd Method of removing photoresist
WO2009039551A1 (en) * 2007-09-26 2009-04-02 Silverbrook Research Pty Ltd Method of removing photoresist
CN102509699B (zh) * 2011-11-02 2016-05-11 上海华虹宏力半导体制造有限公司 金属层光刻胶重涂方法以及光刻方法
US8871639B2 (en) 2013-01-04 2014-10-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
US9685393B2 (en) * 2013-03-04 2017-06-20 The Hong Kong University Of Science And Technology Phase-change chamber with patterned regions of high and low affinity to a phase-change medium for electronic device cooling
US10381322B1 (en) 2018-04-23 2019-08-13 Sandisk Technologies Llc Three-dimensional memory device containing self-aligned interlocking bonded structure and method of making the same
US10879260B2 (en) 2019-02-28 2020-12-29 Sandisk Technologies Llc Bonded assembly of a support die and plural memory dies containing laterally shifted vertical interconnections and methods for making the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177588A (en) 1991-06-14 1993-01-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including nitride layer
JP3204041B2 (ja) 1995-05-19 2001-09-04 ソニー株式会社 絶縁膜の形成方法
JPH0992717A (ja) 1995-09-21 1997-04-04 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH11150101A (ja) * 1997-11-18 1999-06-02 Nec Corp 半導体装置の製造方法
JP3193335B2 (ja) * 1997-12-12 2001-07-30 松下電器産業株式会社 半導体装置の製造方法
JP3248492B2 (ja) 1998-08-14 2002-01-21 日本電気株式会社 半導体装置及びその製造方法
JP2000077410A (ja) 1998-08-27 2000-03-14 Tokyo Ohka Kogyo Co Ltd 多層配線構造の形成方法
US6207583B1 (en) * 1998-09-04 2001-03-27 Alliedsignal Inc. Photoresist ashing process for organic and inorganic polymer dielectric materials
US6117782A (en) * 1999-04-22 2000-09-12 Advanced Micro Devices, Inc. Optimized trench/via profile for damascene filling
US6457477B1 (en) * 2000-07-24 2002-10-01 Taiwan Semiconductor Manufacturing Company Method of cleaning a copper/porous low-k dual damascene etch

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002324837A (ja) * 2001-04-25 2002-11-08 Hitachi Ltd 半導体装置の製造方法
US7563705B2 (en) 2002-02-14 2009-07-21 Nec Electronics Corporation Manufacturing method of semiconductor device
KR100439844B1 (ko) * 2002-07-24 2004-07-12 삼성전자주식회사 반도체 소자의 금속배선 형성 후의 감광막 제거방법
US7172965B2 (en) 2003-05-21 2007-02-06 Rohm Co., Ltd. Method for manufacturing semiconductor device
JP2008545253A (ja) * 2005-05-10 2008-12-11 ラム リサーチ コーポレーション 通常の低ｋ誘電性材料および／または多孔質の低ｋ誘電性材料の存在下でのレジスト剥離のための方法
KR100976882B1 (ko) 2007-08-17 2010-08-18 도쿄엘렉트론가부시키가이샤 반도체 장치의 제조 방법 및 기억 매체

Also Published As

Publication number Publication date
US20020090833A1 (en) 2002-07-11
US20020182891A1 (en) 2002-12-05
US6903027B2 (en) 2005-06-07

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