JP2003121987A - Method for fabricating photomask - Google Patents
Method for fabricating photomaskInfo
- Publication number
- JP2003121987A JP2003121987A JP2001315015A JP2001315015A JP2003121987A JP 2003121987 A JP2003121987 A JP 2003121987A JP 2001315015 A JP2001315015 A JP 2001315015A JP 2001315015 A JP2001315015 A JP 2001315015A JP 2003121987 A JP2003121987 A JP 2003121987A
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- shielding film
- spot
- photomask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 13
- 238000012937 correction Methods 0.000 claims description 53
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 abstract description 14
- 230000001070 adhesive effect Effects 0.000 abstract description 14
- 230000010485 coping Effects 0.000 abstract description 3
- 239000003607 modifier Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 9
- 230000007613 environmental effect Effects 0.000 description 7
- 238000007689 inspection Methods 0.000 description 6
- 230000010363 phase shift Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 230000008570 general process Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＬＳＩなどの微細
パターンを投影露光装置にて転写する際に用いられるフ
ォトマスクの製造方法等に関し、特に遮光性膜上に強固
な付着力で付着した異物についての対処方法等に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a photomask used for transferring a fine pattern of an LSI or the like by a projection exposure apparatus, and particularly to a foreign substance attached to a light-shielding film with a strong adhesive force. Regarding the coping method, etc.
【０００２】[0002]
【従来の技術】半導体装置等の製造工程で使用されるフ
ォトマスク、レチクルを異物検査装置で検査した際に検
出された基板上に付着した異物等の中で、遮光性膜上に
存在する付着異物は、光透光預域に存在する付着異物と
は異なり、通常転写される露光光には影響を与えないた
め通常は欠陥として扱われない。つまり、例えば通常の
フォトマスク等におけるクロム系遮光膜上に付着異物が
存在しても、クロム系遮光膜の遮光性には影響を与えな
いため通常は問題とならない。このように、遮光性膜上
に存在する付着異物は、一見転写露光上は問題ないと思
われがちだが、ペリクル（マスク表面への塵等の付着を
防止するためのカバー）を貼らない場合などはステッパ
ー上で使用中に何らかの原因によりその異物がステッパ
ーレンズ上に落ちたりして問題となる。また、ペリクル
を貼った場合でも異物が剥離して別の光透光預域に移動
してしまう可能性があるため、膜上の付着異物は極力少
ない事に越したことはない。そこで、異物検査装置で検
査した際に付着異物を検出した場合、それを落とすため
に再度洗浄することになる。2. Description of the Related Art Among the foreign substances and the like attached to the substrate, which are detected when the photomask and reticle used in the manufacturing process of semiconductor devices and the like are inspected by the foreign substance inspection device, the adhesion existing on the light-shielding film. Unlike the adhering foreign matter existing in the light transmissive deposit area, the foreign matter does not affect the exposure light that is normally transferred, and therefore is not normally treated as a defect. That is, for example, even if foreign matter adheres to the chrome-based light-shielding film in a normal photomask or the like, it does not affect the light-shielding property of the chrome-based light-shielding film, and thus does not usually cause a problem. In this way, it seems that the adhering foreign matter existing on the light-shielding film seems to be no problem in transfer exposure at first glance, but when a pellicle (a cover for preventing dust etc. from adhering to the mask surface) is not attached. Is a problem because foreign substances fall onto the stepper lens for some reason during use on the stepper. In addition, even if a pellicle is attached, foreign matter may be peeled off and moved to another light transmissive deposit area. Therefore, it is best to keep the foreign matter on the film as small as possible. Therefore, if an adhering foreign substance is detected during the inspection by the foreign substance inspection device, it is washed again to drop it.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、遮光性
膜上に存在する付着異物が、強固な付着力で付着してい
る場合は何回洗浄しても落ちない場合がある。ここで、
問題なのはマスク作製時は強固な付着力によりその場に
とどまっていても、マスク運送時の振動やその後の保管
環境雰囲気により後日なにかしらの化学反応によって付
着力が弱まってしまい、その場から脱離してしまった
り、異物がガスを放出してしまうことである。However, when the adhered foreign matter existing on the light-shielding film adheres with a strong adhesive force, it may not be removed even if it is washed many times. here,
The problem is that even if the mask stays in place due to its strong adhesive force during mask fabrication, the adhesive force weakens due to some chemical reaction at a later date due to vibration during mask transportation and the atmosphere of the storage environment after that, and the mask is removed from the site. It is that they are separated from each other, or foreign matter emits gas.
【０００４】[0004]
【課題を解決するための手段】本発明は上記問題点を解
決するために、以下の構成を有する。In order to solve the above problems, the present invention has the following constitution.
【０００５】（構成１） 透明基板上にパターニングさ
れた遮光性膜を有するフォトマスクにおいて、前記遮光
性膜上の付着異物を被うスポット修正膜が形成されてい
ることを特徴とするフォトマスク。(Structure 1) A photomask having a light-shielding film patterned on a transparent substrate, characterized in that a spot-correcting film for covering adhered foreign matters on the light-shielding film is formed.
【０００６】（構成２） 透明基板上にパターニングさ
れた遮光性膜を有するフォトマスクにおいて、前記遮光
性膜上の、付着異物とこの異物の下部に位置する遮光性
膜を除去した箇所を被うスポット修正膜が形成されてい
ることを特徴とするフォトマスク。(Structure 2) In a photomask having a light-shielding film patterned on a transparent substrate, a portion of the light-shielding film where the adhering foreign matter and the light-shielding film located under the foreign matter are removed is covered. A photomask having a spot correction film formed thereon.
【０００７】（構成３） 透明基板上にパターニングさ
れた遮光性膜を有するフォトマスクを製造し、遮光性膜
上に存在する付着異物を、スポット成膜修正装置を用い
てスポット修正膜で被うことを特徴とするフォトマスク
の製造方法。(Structure 3) A photomask having a light-shielding film patterned on a transparent substrate is manufactured, and adhered foreign matters existing on the light-shielding film are covered with a spot correction film using a spot film formation correction device. A method of manufacturing a photomask, comprising:
【０００８】（構成４） 透明基板上にパターニングさ
れた遮光性膜を有するフォトマスクを製造し、遮光性膜
上に存在する異物とこの異物の下部に位置する遮光性膜
をスポット除去修正装置を用いて除去し、その後遮光性
膜除去部分をスポット成膜修正装置を用いてスポット修
正膜で被うことを特徴とするフォトマスクの製造方法。(Structure 4) A photomask having a light-shielding film patterned on a transparent substrate is manufactured, and a foreign matter existing on the light-shielding film and a light-shielding film located below the foreign matter are spot-removed and corrected by a device. A method of manufacturing a photomask, comprising: removing the light-shielding film, and then covering the removed portion of the light-shielding film with a spot correction film using a spot film formation correction device.
【０００９】（構成５） 前記スポット成膜修正装置
が、ＦＩＢを利用した修正装置であることを特徴とする
構成３又は４に記載のフォトマスクの製造方法。(Structure 5) The method of manufacturing a photomask according to Structure 3 or 4, wherein the spot film formation correction apparatus is a correction apparatus using FIB.
【００１０】（構成６） 前記スポット修正膜が、カー
ボン膜であることを特徴とする構成１又は２に記載のフ
ォトマスク。(Structure 6) The photomask according to Structure 1 or 2, wherein the spot correction film is a carbon film.
【００１１】（構成７） 前記スポット除去修正装置
が、レーザー修正装置又はＦＩＢを利用した修正装置で
あることを特徴とする構成４又は５に記載のフォトマス
クの製造方法。(Structure 7) The method of manufacturing a photomask according to Structure 4 or 5, wherein the spot removal / correction device is a laser correction device or a correction device using an FIB.
【００１２】[0012]
【作用】上記構成１、３によれば、遮光性膜上に存在す
る付着異物をスポット成膜修正装置を用いてスポット修
正膜で被う（被覆する）ことによって、付着異物はスポ
ット修正膜で閉じ込められた上に下地である遮光性膜に
強固に付着するため、後日マスク使用中に剥離したり、
周りの環境雰囲気により何らかの化学変化をおこして付
着力が弱まったり、異物がガスを放出したりする事態を
低減又は回避できる。なお、構成１、３において、遮光
性膜とは、遮光膜と半透光膜（ハーフトーン位相シフト
膜）を含む。半透光膜の場合、半透光膜パターンのエッ
ジ付近に付着異物がある場合は位相シフト機能の発現の
妨げとなるので本発明の適用は難しいが、エッジ付近以
外の部分に付着異物がある場合はこの部分は遮光性を発
揮させるべき部分であるので本発明を適用できる。構成
１、３において、スポット修正膜を形成するためのスポ
ット成膜修正装置としては、一般的にフォトマスクの白
欠陥（遮光性膜欠落欠陥）修正に用いられる修正装置を
使用できる。このようなスポット成膜修正装置として
は、例えば、ＦＩＢ（focused ion beam）を利用した修
正装置、レーザＣＶＤを利用した修正装置などが挙げら
れる。このことは以下の構成においても同様である。According to the above-mentioned structures 1 and 3, the adhered foreign matter is covered with the spot correction film by covering (covering) the adhered foreign matter existing on the light-shielding film with the spot film forming and correcting apparatus. Since it is firmly confined and firmly adheres to the underlying light-shielding film, it may peel off during later use of the mask,
It is possible to reduce or avoid the situation that the adhesive force is weakened due to some chemical change due to the surrounding environment atmosphere, or the foreign matter emits gas. In Configurations 1 and 3, the light-shielding film includes a light-shielding film and a semi-light-transmitting film (halftone phase shift film). In the case of a semi-transparent film, it is difficult to apply the present invention when there is a foreign substance adhering to the edge of the semi-transparent film pattern, which hinders the expression of the phase shift function, but there is a foreign substance adhering to the part other than the edge. In this case, the present invention can be applied because this portion is a portion that should exhibit the light shielding property. In the configurations 1 and 3, as a spot film formation correction device for forming the spot correction film, a correction device generally used for correcting white defects (light-shielding film missing defect) of a photomask can be used. Examples of such spot film formation correction apparatus include a correction apparatus using FIB (focused ion beam) and a correction apparatus using laser CVD. This also applies to the following configurations.
【００１３】上記構成２、４によれば、遮光性膜上に存
在する異物とこの異物の下部に位置する遮光性膜をスポ
ット修正装置を用いて除去することによって、付着異物
は完全に除去されているので、付着異物が原因で生じる
問題が生じる余地がなくこの問題を完全に解決できる。
また、異物とともに除去された遮光性膜の部分は、スポ
ット修正膜で被うため、通常の白欠陥（遮光性膜欠落欠
陥）修正と同じであり、使用上何ら問題なく使用でき
る。なお、構成２、４において、スポット除去修正装置
としては、一般的にフォトマスクの黒欠陥（遮光性膜余
剰欠陥）修正に用いられる修正装置を使用できる。この
ような修正装置としては、例えば、ＦＩＢ（focused io
n beam）を利用した修正装置やレーザー修正装置などが
挙げられる。スポット成膜修正装置については上記構成
１と同様である。According to the above constitutions 2 and 4, the foreign matter present on the light-shielding film and the light-shielding film located under the foreign matter are removed by using the spot correction device, whereby the adhered foreign matter is completely removed. Therefore, there is no room for a problem caused by the adhered foreign matter, and this problem can be completely solved.
Further, since the portion of the light-shielding film removed together with the foreign matter is covered with the spot correction film, it is the same as a normal white defect (light-shielding film missing defect) correction and can be used without any problem in use. In Structures 2 and 4, as the spot removal / correction device, a correction device that is generally used to correct a black defect (light-shielding film surplus defect) of a photomask can be used. An example of such a correction device is an FIB (focused io).
n beam) and a laser repair device. The spot film forming correction apparatus is the same as that of the above-mentioned configuration 1.
【００１４】上記構成１〜４において、遮光性膜上に存
在する異物が、遮光性膜上に強固な付着力で付着した異
物である場合、例えば、洗浄では落とせないか又は容易
に落とせない異物である場合に本発明は特に有効であ
る。In the above-mentioned configurations 1 to 4, when the foreign matter existing on the light-shielding film is a foreign matter adhered to the light-shielding film with a strong adhesive force, for example, the foreign matter cannot be removed by washing or cannot be easily removed. The present invention is particularly effective when
【００１５】上記構成５では、スポット成膜修正装置が
ＦＩＢを利用した修正装置であることによって、高い精
度でスポット修正膜を形成でき、しかもスポット修正膜
の付着強度や膜密度が高いので好ましい。スポット修正
膜の膜密度が高いと、異物の化学変化や異物からのガス
放出を効果的に防止できるので好ましい。In the above-mentioned structure 5, since the spot film-forming correction device is a correction device utilizing the FIB, the spot correction film can be formed with high accuracy, and further, the adhesion strength and the film density of the spot correction film are high, which is preferable. A high film density of the spot correction film is preferable because it can effectively prevent chemical change of foreign matter and gas release from foreign matter.
【００１６】上記構成６では、カーボン膜は特に付着強
度や膜密度が高いので好ましい。つまり、構成１、３の
スポット修正膜としてカーボン膜を用いることによっ
て、付着異物はカーボン膜で閉じ込められた上に下地遮
光膜に強固に付着するため、後日マスク使用中に剥離し
たり、周りの環境雰囲気により何らかの化学変化を起こ
して付着力が弱まったりガスを放出したりする事態を確
実に回避できる。付着強度や異物からのガス放出防止等
の観点からは、カーボン膜の膜厚は２０００〜５０００
オングストローム程度が好ましい。また、構成２、４の
スポット修正膜としてカーボン膜を用いることによっ
て、カーボン膜は、十分な光学濃度有するので遮光膜の
白修正に有効であり、また膜厚を調整することによって
光学濃度調整が可能であるので半透光膜（ハーフトーン
膜）の修正にも利用できる。また、カーボン膜は付着強
度が強いので、マスク使用時の洗浄等によって剥がれる
ことがない。In the above constitution 6, the carbon film is preferable because it has particularly high adhesion strength and film density. That is, by using the carbon film as the spot correction film of the configurations 1 and 3, the adhered foreign matter is confined by the carbon film and firmly adheres to the base light-shielding film. It is possible to surely avoid a situation where the adhesive force is weakened or gas is released due to some chemical change due to the environmental atmosphere. From the viewpoint of adhesion strength and prevention of gas release from foreign matters, the thickness of the carbon film is 2000 to 5000.
About angstrom is preferable. Further, by using a carbon film as the spot correction film of the configurations 2 and 4, the carbon film is effective for white correction of the light-shielding film because it has a sufficient optical density, and the optical density can be adjusted by adjusting the film thickness. Since it is possible, it can also be used to modify a semi-transparent film (halftone film). Further, since the carbon film has a high adhesive strength, it will not be peeled off by cleaning when the mask is used.
【００１７】上記構成７では、構成４のスポット除去修
正装置が、レーザー修正装置である場合、容易かつ低コ
ストで異物及び異物の下部に位置する遮光性膜を除去す
ることができる。構成４のスポット除去修正装置が、Ｆ
ＩＢを利用した修正装置である場合、高精度で異物及び
異物の下部に位置する遮光性膜を除去することができ
る。なお、構成４におけるスポット除去修正装置及びス
ポット成膜修正装置が共にＦＩＢを利用した修正装置で
ある場合、これらの修正を同時に連続して行うことが可
能であるので、工程の削減及び修正に要する時間の短縮
が可能となる。In the above-mentioned structure 7, when the spot removing / correcting device of the structure 4 is a laser correcting device, it is possible to easily remove the foreign matter and the light-shielding film located under the foreign matter at low cost. The spot removal correction device of the configuration 4 is F
In the case of the correction device using the IB, it is possible to remove the foreign matter and the light-shielding film located under the foreign matter with high accuracy. When both the spot removal correction device and the spot film formation correction device in the configuration 4 are correction devices that use the FIB, these corrections can be performed continuously at the same time, which requires reduction and correction of steps. The time can be shortened.
【００１８】なお、本発明は、マスクの検査や修正工程
を含めたマスク製造工程において実施されることが好ま
しいが、マスク使用時に遮光性膜上に付着異物が強固な
付着力で付着した場合にも適用できる。すなわち、本発
明には、以下の発明が含まれる。
（構成８） 透明基板上にパターニングされた遮光性膜
を有するフォトマスクにおいて、遮光性膜上に存在する
付着異物を、スポット成膜修正装置を用いてスポット修
正膜で被うことを特徴とするフォトマスクの異物対処方
法。
（構成９） 透明基板上にパターニングされた遮光性膜
を有するフォトマスクにおいて、遮光性膜上に存在する
異物とこの異物の下部に位置する遮光性膜をスポット除
去修正装置を用いて除去し、その後遮光性膜除去部分を
スポット成膜修正装置を用いてスポット修正膜で被うこ
とを特徴とするフォトマスクの異物対処方法。
さらに、本発明には、上記構成３〜９の方法によって得
られたフォトマスクが含まれる。It is preferable that the present invention is carried out in a mask manufacturing process including a mask inspection and a repair process. However, when a foreign substance adhered to the light-shielding film adheres with a strong adhesive force when the mask is used. Can also be applied. That is, the present invention includes the following inventions. (Structure 8) In a photomask having a light-shielding film patterned on a transparent substrate, a foreign matter adhered on the light-shielding film is covered with a spot correction film using a spot film formation correction device. How to deal with foreign matter on the photomask. (Structure 9) In a photomask having a light-shielding film patterned on a transparent substrate, a foreign substance existing on the light-shielding film and the light-shielding film located under the foreign substance are removed by using a spot removal correction device, Then, a method for coping with foreign matter in a photomask, characterized in that the light shielding film removed portion is covered with a spot correction film by using a spot film formation correction device. Furthermore, the present invention includes the photomask obtained by the method of the above configurations 3 to 9.
【００１９】[0019]
【実施例】実施例１
図１は本発明の第一の実施例にかかるフォトマスクの製
造工程の説明図である。以下この図を参照しながら本実
施例を説明する。ごく一般的なプロセスにて作製された
フォトマスクにペリクルを貼りつけるために洗浄を行な
い表面異物検査を行なったところ、透明基板１上に形成
されたＣｒからなる遮光膜２上に約２．０μｍの異物３
が付着していた（図１（ａ））。そこで、再度洗浄を行
ない表面異物検査を行なったところ、その異物はそのま
ま残っており、強固な付着力を持った異物と判定され
た。そこで、ＦＩＢを利用したスポット成膜修正装置に
てその異物を被うために、カーボン膜４を約５００ｎｍ
堆積させた（同図（ｂ））。最後に、ペリクル５を装着
した（同図（ｃ））。Embodiment 1 FIG. 1 is an explanatory diagram of a photomask manufacturing process according to a first embodiment of the present invention. This embodiment will be described below with reference to this drawing. When the surface of the photomask manufactured by a very general process was attached to the pellicle for cleaning, and surface foreign matter inspection was performed, it was found that about 2.0 μm was formed on the light shielding film 2 made of Cr formed on the transparent substrate 1. Foreign object 3
Were attached (FIG. 1 (a)). Therefore, when the surface was again cleaned and inspected for foreign matter, the foreign matter remained, and it was determined that the foreign matter had a strong adhesive force. Therefore, in order to cover the foreign matter with the spot film forming / correcting apparatus using the FIB, the carbon film 4 is coated with about 500 nm
It was deposited ((b) of the same figure). Finally, the pellicle 5 was attached (FIG. 7 (c)).
【００２０】上記ペリクル５を装着したマスクについ
て、かなりの時間経過後と、環境雰囲気を変化させた状
態に置いた後とのそれぞれについて、振動試験を実施し
たが異物の移動は確認されなかった。また、かなりの時
間経過後と、環境雰囲気を変化させた状態に置いた後と
のそれぞれについて、ガス放出等による変化を調べた
が、異常は確認されなかった。これに対し、上記と同様
強固な付着力を持った異物と判定された約２．０μｍの
異物３が遮光膜２上に付着したマスクについて、かなり
の時間経過後と、環境雰囲気を変化させた状態に置いた
後とのそれぞれについて、振動試験を実施した結果、異
物が移動する場合があることが確認された。また、かな
りの時間経過後と、環境雰囲気を変化させた状態に置い
た後とのそれぞれについて、ガス放出等による変化を調
べたところ、ガス放出等による新たな異物の出現やペリ
クルの曇りが生じる場合があることが確認された。With respect to the mask on which the pellicle 5 was mounted, a vibration test was carried out after a considerable amount of time had passed and after the environmental atmosphere had been changed, but no movement of foreign matter was confirmed. Also, changes due to gas release and the like were examined after a considerable period of time and after being placed in a state where the environmental atmosphere was changed, but no abnormality was confirmed. On the other hand, with respect to the mask in which the foreign matter 3 of about 2.0 μm, which was determined to have a strong adhesive force as described above, adhered on the light-shielding film 2, the environmental atmosphere was changed after a considerable time had elapsed. As a result of conducting a vibration test for each of the cases after being placed in the state, it was confirmed that foreign matter might move. In addition, when the changes due to gas release, etc. were examined after a considerable amount of time had passed and after the environment was changed, the appearance of new foreign matter due to gas release and the fogging of the pellicle occurred. It was confirmed that there are cases.
【００２１】実施例２
図２は本発明の第二の実施例にかかるフォトマスクの製
造工程の説明図である。以下この図を参照しながら本実
施例を説明する。ごく一般的なプロセスにて作製された
フォトマスクにペリクルを貼りつけるために洗浄を行な
い表面異物検査を行なったところ、透明基板１上に形成
されたＣｒからなる遮光膜２上に約２．０μｍの異物３
が付着していた（図２（ａ））。そこで、再度洗浄を行
ない表面異物検査を行なったところ、その異物はそのま
ま残っており、強固な付着力を持った異物と判定され
た。そこで、通常フォトマスクの余剰欠陥を除去するた
めに用いられるレーザー修正装置にてその異物を下地遮
光膜部分と一緒に除去した（同図（ｂ））。次にＦＩＢ
を利用した装置にて除去された部分を埋めるためにカー
ボン膜４を約２００ｎｍ堆積させた（同図（ｃ））。こ
れらの作業によって異物は当然無くなり、通常の白欠陥
修正跡と同じ状態になった。最後にペリクル５を装着し
た（同図（ｄ））。 Embodiment 2 FIG. 2 is an explanatory view of a photomask manufacturing process according to a second embodiment of the present invention. This embodiment will be described below with reference to this drawing. When the surface of the photomask manufactured by a very general process was attached to the pellicle for cleaning, and surface foreign matter inspection was performed, it was found that about 2.0 μm was formed on the light shielding film 2 made of Cr formed on the transparent substrate 1. Foreign object 3
Were attached (FIG. 2 (a)). Therefore, when the surface was again cleaned and inspected for foreign matter, the foreign matter remained, and it was determined that the foreign matter had a strong adhesive force. Therefore, the foreign matter was removed together with the underlying light-shielding film portion by a laser repairing device which is usually used to remove the surplus defect of the photomask (FIG. 2B). Next FIB
A carbon film 4 was deposited to a thickness of about 200 nm in order to fill the removed portion with an apparatus utilizing the same (FIG. 6 (c)). As a result of these operations, foreign matter was naturally eliminated, and the state was the same as that of a normal white defect correction mark. Finally, the pellicle 5 was attached (FIG. 7 (d)).
【００２２】上記ペリクル５を装着したマスクについ
て、かなりの時間経過後と、環境雰囲気を変化させた状
態に置いた後とのそれぞれについて、振動試験を実施し
たが、修正部分の剥がれは確認されなかった。また、ペ
リクル５を装着しないマスクについて、かなりの時間経
過後と、環境雰囲気を変化させた状態に置いた後とのそ
れぞれについて、マスク洗浄を実施したが、修正部分の
剥がれは確認されなかった。さらに、かなりの時間経過
後と、環境雰囲気を変化させた状態に置いた後とのそれ
ぞれについて、ガス放出等による変化を調べたところ、
異物を完全に除去したのであるから当然予想されること
ではあるが、異常は確認されなかった。With respect to the mask on which the pellicle 5 was mounted, a vibration test was carried out after a considerable amount of time had passed and after the environmental atmosphere had been changed, but no peeling of the corrected portion was confirmed. It was Further, with respect to the mask to which the pellicle 5 was not attached, the mask was washed after a considerable time and after being placed in a state where the environmental atmosphere was changed, but no peeling of the corrected portion was confirmed. Furthermore, when a change due to gas release etc. was examined after a considerable time elapsed and after being placed in a state where the environmental atmosphere was changed,
Abnormalities were not confirmed, as would be expected of course because the foreign matter was completely removed.
【００２３】以上好ましい実施例をあげて本発明を説明
したが、本発明は上記実施例に限定されない。例えば、
上述の実施例では遮光性膜としてＣｒ遮光膜を例にとっ
て説明したが、パターンを形成する遮光性膜がＣｒやモ
リブデンシリサイドなどからなる半透光膜（ハーフトー
ン位相シフト膜）である場合も全く同様である。なお、
本発明で言うフォトマスクには、レチクルが含まれる。
また、本発明で言うフォトマスクには、ハーフトーン位
相シフトマスクなどの位相シフトマスクが含まれる。Although the present invention has been described with reference to the preferred embodiments, the present invention is not limited to the above embodiments. For example,
In the above-described embodiments, the Cr light-shielding film has been described as an example of the light-shielding film. However, even when the light-shielding film forming the pattern is a semi-light-transmitting film (halftone phase shift film) made of Cr, molybdenum silicide or the like, there is no problem. It is the same. In addition,
The photomask referred to in the present invention includes a reticle.
Further, the photomask referred to in the present invention includes a phase shift mask such as a halftone phase shift mask.
【００２４】[0024]
【発明の効果】以上詳述したように、本発明の製造方法
によれば比較的単純な工程を付加するのみで遮光性膜上
の異物を処理し、結果として高品質のフォトマスクを歩
留良く得ることができる。As described above in detail, according to the manufacturing method of the present invention, the foreign matter on the light-shielding film is processed only by adding a relatively simple process, and as a result, a high quality photomask is produced. You can get better.
【図１】本発明の第一の実施例にかかるフォトマスクの
製造工程の説明図である。FIG. 1 is an explanatory diagram of a photomask manufacturing process according to a first embodiment of the present invention.
【図２】本発明の第二の実施例にかかるフォトマスクの
製造工程の説明図である。FIG. 2 is an explanatory diagram of a photomask manufacturing process according to a second embodiment of the present invention.
１ 透明基板 ２ 遮光性膜 ３ 異物 ４ カーボン膜 ５ ペリクル 1 transparent substrate 2 Light-shielding film 3 foreign matter 4 carbon film 5 pellicle
Claims (7)
膜を有するフォトマスクにおいて、前記遮光性膜上の付
着異物を被うスポット修正膜が形成されていることを特
徴とするフォトマスク。1. A photomask having a light-shielding film patterned on a transparent substrate, wherein a spot-correcting film that covers adhered foreign matters on the light-shielding film is formed.
膜を有するフォトマスクにおいて、前記遮光性膜上の、
付着異物とこの異物の下部に位置する遮光性膜を除去し
た箇所を被うスポット修正膜が形成されていることを特
徴とするフォトマスク。2. A photomask having a light-shielding film patterned on a transparent substrate, comprising:
A photomask, characterized in that a spot-correcting film is formed to cover the adhered foreign matter and the location where the light-shielding film located under the foreign matter is removed.
膜を有するフォトマスクを製造し、遮光性膜上に存在す
る付着異物を、スポット成膜修正装置を用いてスポット
修正膜で被うことを特徴とするフォトマスクの製造方
法。3. A photomask having a light-shielding film patterned on a transparent substrate is manufactured, and an adhered foreign substance existing on the light-shielding film is covered with the spot correction film by using a spot film formation correction device. A method for manufacturing a featured photomask.
膜を有するフォトマスクを製造し、遮光性膜上に存在す
る異物とこの異物の下部に位置する遮光性膜をスポット
除去修正装置を用いて除去し、その後遮光性膜除去部分
をスポット成膜修正装置を用いてスポット修正膜で被う
ことを特徴とするフォトマスクの製造方法。4. A photomask having a light-shielding film patterned on a transparent substrate is manufactured, and a foreign substance existing on the light-shielding film and the light-shielding film located under the foreign substance are removed by using a spot removing / correcting device. A method of manufacturing a photomask, comprising removing the light-shielding film, and then covering the removed portion of the light-shielding film with a spot correction film using a spot film formation correction device.
利用した修正装置であることを特徴とする請求項３又は
４に記載のフォトマスクの製造方法。5. The method of manufacturing a photomask according to claim 3, wherein the spot film forming correction device is a correction device using FIB.
ることを特徴とする請求項１又は２に記載のフォトマス
ク。6. The photomask according to claim 1, wherein the spot correction film is a carbon film.
修正装置又はＦＩＢを利用した修正装置であることを特
徴とする請求項４又は５に記載のフォトマスクの製造方
法。7. The method of manufacturing a photomask according to claim 4, wherein the spot removal repairing device is a laser repairing device or a repairing device using an FIB.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001315015A JP3637011B2 (en) | 2001-10-12 | 2001-10-12 | Photomask manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001315015A JP3637011B2 (en) | 2001-10-12 | 2001-10-12 | Photomask manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003121987A true JP2003121987A (en) | 2003-04-23 |
| JP3637011B2 JP3637011B2 (en) | 2005-04-06 |
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ID=19133243
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001315015A Expired - Lifetime JP3637011B2 (en) | 2001-10-12 | 2001-10-12 | Photomask manufacturing method |
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| Country | Link |
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| JP (1) | JP3637011B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007057821A (en) * | 2005-08-24 | 2007-03-08 | Toshiba Corp | Mask defect correcting method and semiconductor device manufacturing method |
| JP2020086280A (en) * | 2018-11-29 | 2020-06-04 | 大日本印刷株式会社 | Foreign matter removing method and photomask manufacturing method |
-
2001
- 2001-10-12 JP JP2001315015A patent/JP3637011B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007057821A (en) * | 2005-08-24 | 2007-03-08 | Toshiba Corp | Mask defect correcting method and semiconductor device manufacturing method |
| JP2020086280A (en) * | 2018-11-29 | 2020-06-04 | 大日本印刷株式会社 | Foreign matter removing method and photomask manufacturing method |
| JP7334408B2 (en) | 2018-11-29 | 2023-08-29 | 大日本印刷株式会社 | Foreign matter removal method and photomask manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3637011B2 (en) | 2005-04-06 |
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