JP2003174191A5

JP2003174191A5 -

Info

Publication number: JP2003174191A5
Application number: JP2002179915A
Authority: JP
Filing date: 2002-06-20
Publication date: 2005-09-29
Anticipated expiration: 2022-06-20

Claims

A substrate having a main surface, a semiconductor multilayer film including a light emitting layer formed on the main surface of the substrate, and a plurality of cones provided on the light extraction surface side of the semiconductor multilayer film opposite to the substrate A surface-emitting type semiconductor light-emitting device comprising a protrusion in a shape,
The intersection angle between the bottom surface and the side surface of the plurality of protrusions is set to be 30 degrees or more and 70 degrees or less.

The semiconductor multilayer film has a double heterostructure part in which an active layer is sandwiched between clad layers, a transparent electrode is formed on the clad layer opposite to the substrate of the double heterostructure part, and the protrusion is 2. The semiconductor light emitting element according to claim 1, wherein the semiconductor light emitting element is formed on a surface of a cladding layer immediately below the transparent electrode.

The semiconductor multilayer film has a double hetero structure part in which an active layer is sandwiched between clad layers, and a current diffusion layer is formed on the clad layer opposite to the substrate of the double hetero structure part, The semiconductor light emitting device according to claim 1, wherein the protrusion is formed on a surface of the current diffusion layer.

4. The semiconductor light emitting device according to claim 2, wherein the active layer is InGaAlP, and the cladding layer is InAlP.

The semiconductor light emitting element according to claim 1, wherein the protrusion is a cone or a pyramid.

4. The semiconductor light emitting element according to claim 1, wherein a ratio of an area occupied by the protrusions on the light extraction surface side is 50% or more.

The semiconductor light emitting element according to claim 1, wherein the protrusions are provided periodically, and the period is 0.5 μm or more.

4. The semiconductor light emitting device according to claim 1, wherein 90% or more of the protrusions satisfy the intersection angle of 30 degrees or more and 70 degrees or less.

A semiconductor light emitting device comprising: a substrate having a main surface; and a semiconductor multilayer film including a light emitting layer formed on the main surface of the substrate,
The light extraction surface opposite to the substrate of the semiconductor multilayer film is roughened so as to have a number of irregularities, and the distance between the top and bottom of each irregularity on the roughened surface (the height of the irregularities). ) Is set to 50 nm or more and a light emission wavelength λ or less in the light emitting layer, and a period of the unevenness is set to 0.5λ or less .

A substrate having a main surface; a semiconductor multilayer film including a light emitting layer formed on the main surface of the substrate; and a light extraction surface side opposite to the substrate of the semiconductor multilayer film, wherein the surface has a plurality of surfaces A semiconductor light emitting device comprising an antireflection film roughened to have an uneven shape,
The distance between the top and bottom of each unevenness of the antireflection film (the height of the unevenness) is set to 50 nm or more and the emission wavelength λ or less in the light emitting layer, and the period of the unevenness is set to 0.5λ or less. A semiconductor light emitting element characterized by comprising:

A substrate having a main surface; a semiconductor multilayer film including a light emitting layer formed on the main surface of the substrate; and a first portion formed on the light extraction surface side of the semiconductor multilayer film opposite to the substrate. 1 and an antireflection film that is provided on the light extraction surface side of the semiconductor multilayer film in a portion excluding the first electrode and is roughened so that the surface has a number of irregularities; and A semiconductor light emitting device comprising a second electrode formed on the entire back surface side,
The distance between the top and bottom of the unevenness of the antireflection film (the height of the unevenness) is set to 50 nm or more and the emission wavelength λ or less in the light emitting layer, and the period of the unevenness is set to 0.5λ or less. A semiconductor light emitting element characterized by comprising:

The semiconductor multilayer film has a double heterostructure part in which an active layer is sandwiched between clad layers, and a transparent electrode is formed on the clad layer on the opposite side of the double heterostructure part from the substrate. 10. The semiconductor light emitting device according to claim 9, wherein the surface of the clad layer is roughened.

The semiconductor multilayer film has a double hetero structure part in which an active layer is sandwiched between clad layers, and a current diffusion layer is formed on the clad layer opposite to the substrate of the double hetero structure part, The semiconductor light emitting device according to claim 9, wherein a surface of the current diffusion layer is roughened.

The semiconductor multilayer film has a double hetero structure part in which an active layer is sandwiched between clad layers, and a current diffusion layer is formed on a clad layer opposite to the substrate of the double hetero structure part. The semiconductor light emitting device according to claim 10.

The semiconductor multilayer film has a double hetero structure part in which an active layer is sandwiched between clad layers, and a current diffusion layer is formed on the clad layer opposite to the substrate of the double hetero structure part, 12. The semiconductor light emitting device according to claim 11, wherein the first electrode and the antireflection film are formed on a surface of the current diffusion layer.

The semiconductor light emitting element according to claim 12, wherein the active layer is InGaAlP, and the cladding layer is InAlP.

11. The refractive index of the antireflection film is set higher than the transparent resin filling the light extraction surface side of the semiconductor multilayer film and lower than the uppermost layer of the semiconductor multilayer film. Or a semiconductor light emitting device according to 11;

A compound semiconductor substrate of a first conductivity type, a double hetero structure part formed by forming a first conductivity type clad layer, an active layer, and a second conductivity type clad layer on the substrate, and the double hetero structure A second conductivity type current diffusion layer formed on the second conductivity type cladding layer, a second conductivity type contact layer formed on the current diffusion layer, and selectively formed on the contact layer A semiconductor light emitting device comprising: a formed upper electrode; a lower electrode formed on the back side of the substrate; and an antireflection film formed on a portion of the contact layer where the electrode is not formed. And
The surface of the antireflection film is roughened into a shape having a large number of irregularities, and the distance (height of irregularities) between the top and bottom of the irregularities by the roughening is 50 nm or more and the emission wavelength λ in the light emitting layer The semiconductor light emitting device is set as follows, and the period of the unevenness is set to 0.5λ or less .

A method for manufacturing a semiconductor light emitting device according to claim 1, comprising:
When growing a layer containing P as a group V element located on the light extraction surface side of the semiconductor multilayer film, a PH3 partial pressure during growth is set to 1 to 20 Pa, and the protrusion is formed on the growth surface. A method for manufacturing a semiconductor light-emitting device.

A method for manufacturing a semiconductor light emitting device according to claim 1, comprising:
The protrusion is formed by roughening the surface of the predetermined layer located on the light extraction surface side of the semiconductor multilayer film in a random direction with a grinder having a tip angle of 120 degrees or less. Production method.

A method for manufacturing a semiconductor light emitting device according to claim 1, comprising:
Forming the protrusions by annealing a layer containing P as a group V element located on the light extraction surface side of the semiconductor multilayer film using a group V element different from the group V element and hydrogen gas. A method of manufacturing a semiconductor light emitting device.

A method for producing a semiconductor light emitting device according to claim 10 or 11,
A method of manufacturing a semiconductor light emitting element, wherein, when forming the antireflection film, the antireflection film is applied and formed, and then pressed with a mold having irregularities.

A method for producing a semiconductor light emitting device according to claim 10 or 11,
A method of manufacturing a semiconductor light emitting device, wherein, when forming the antireflection film, the antireflection film is formed, and then the surface is roughened in a random direction by a grinder.

Forming a double heterostructure part on the first conductive type compound semiconductor substrate by sandwiching an active layer between the first conductive type clad layer and the second conductive type clad layer; Forming a second conductivity type current diffusion layer on the second conductivity type cladding layer; forming a second conductivity type contact layer on the current diffusion layer; and surface roughness (PV) on the contact layer. Forming an antireflection film whose value (max-min) is less than or equal to the emission wavelength of the light emitting layer, and forming an upper electrode on the exposed contact layer by partially removing the antireflection film And a step of forming a lower electrode on the back side of the substrate.

Claim 9, 10, 11, 18 semiconductor light-emitting device according to any one of, wherein the height of the irregularities is set to at least 200 nm.