JP2003229408A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003229408A5 JP2003229408A5 JP2002027630A JP2002027630A JP2003229408A5 JP 2003229408 A5 JP2003229408 A5 JP 2003229408A5 JP 2002027630 A JP2002027630 A JP 2002027630A JP 2002027630 A JP2002027630 A JP 2002027630A JP 2003229408 A5 JP2003229408 A5 JP 2003229408A5
- Authority
- JP
- Japan
- Prior art keywords
- ring
- processed
- processing apparatus
- flat surface
- surface portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 3
- 239000010453 quartz Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- 238000009413 insulation Methods 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 238000009832 plasma treatment Methods 0.000 claims 2
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002027630A JP4209618B2 (ja) | 2002-02-05 | 2002-02-05 | プラズマ処理装置及びリング部材 |
| AU2002366921A AU2002366921A1 (en) | 2001-12-13 | 2002-12-12 | Ring mechanism, and plasma processing device using the ring mechanism |
| TW095107948A TW200626020A (en) | 2001-12-13 | 2002-12-12 | Ring mechanism, and plasma processor using the ring mechanism |
| PCT/JP2002/013016 WO2003054947A1 (fr) | 2001-12-13 | 2002-12-12 | Mecanisme en anneau, et dispositif de traitement de plasma utilisant ce mecanisme en anneau |
| TW091135997A TWI272877B (en) | 2001-12-13 | 2002-12-12 | Ring mechanism, and plasma processing device using the ring mechanism |
| US10/498,478 US7882800B2 (en) | 2001-12-13 | 2002-12-12 | Ring mechanism, and plasma processing device using the ring mechanism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002027630A JP4209618B2 (ja) | 2002-02-05 | 2002-02-05 | プラズマ処理装置及びリング部材 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003229408A JP2003229408A (ja) | 2003-08-15 |
| JP2003229408A5 true JP2003229408A5 (2) | 2005-07-14 |
| JP4209618B2 JP4209618B2 (ja) | 2009-01-14 |
Family
ID=27749086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002027630A Expired - Fee Related JP4209618B2 (ja) | 2001-12-13 | 2002-02-05 | プラズマ処理装置及びリング部材 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4209618B2 (2) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005303099A (ja) | 2004-04-14 | 2005-10-27 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
| JP4670311B2 (ja) * | 2004-10-28 | 2011-04-13 | 住友精密工業株式会社 | ドライエッチング装置 |
| US8382941B2 (en) | 2008-09-15 | 2013-02-26 | Micron Technology, Inc. | Plasma reactor with adjustable plasma electrodes and associated methods |
| JP5398358B2 (ja) | 2009-05-29 | 2014-01-29 | 三菱重工業株式会社 | 基板支持台の構造及びプラズマ処理装置 |
| JP6085079B2 (ja) | 2011-03-28 | 2017-02-22 | 東京エレクトロン株式会社 | パターン形成方法、処理容器内の部材の温度制御方法、及び基板処理システム |
| JP2015005634A (ja) * | 2013-06-21 | 2015-01-08 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP6853038B2 (ja) * | 2013-06-26 | 2021-03-31 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Icpプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 |
| US20150001180A1 (en) * | 2013-06-28 | 2015-01-01 | Applied Materials, Inc. | Process kit for edge critical dimension uniformity control |
| US20170002465A1 (en) * | 2015-06-30 | 2017-01-05 | Lam Research Corporation | Separation of Plasma Suppression and Wafer Edge to Improve Edge Film Thickness Uniformity |
| JP6966286B2 (ja) | 2017-10-11 | 2021-11-10 | 東京エレクトロン株式会社 | プラズマ処理装置、フォーカスリングの昇降制御方法およびフォーカスリングの昇降制御プログラム |
| TWI848010B (zh) | 2018-10-18 | 2024-07-11 | 美商蘭姆研究公司 | 用於斜面蝕刻器的下電漿排除區域環 |
| KR102864012B1 (ko) * | 2018-12-03 | 2025-09-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 척킹 및 아크 발생 성능이 개선된 정전 척 설계 |
| JP7612618B2 (ja) * | 2019-06-18 | 2025-01-14 | ラム リサーチ コーポレーション | 基板処理システム用の縮径キャリアリングハードウェア |
| CN116469803B (zh) * | 2023-04-17 | 2024-11-05 | 浙江海纳半导体股份有限公司 | 一种去边设备 |
-
2002
- 2002-02-05 JP JP2002027630A patent/JP4209618B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2003229408A5 (2) | ||
| WO2003009363A1 (fr) | Processeur a plasma et procede de traitement au plasma | |
| KR20180084647A (ko) | 플라즈마 처리 장치 | |
| TW200520632A (en) | Focus ring and plasma processing apparatus | |
| TW200741860A (en) | Plasma processing apparatus, plasma processing method, focus ring, and focus ring component | |
| TW200711029A (en) | Substrate processing apparatus and substrate stage used therein | |
| TW200507156A (en) | Plasma processing apparatus, focus ring, and susceptor | |
| MY154832A (en) | Actively heated aluminium baffle component having improved particle performance and methods of use and manufacture thereof | |
| JP2004235623A5 (2) | ||
| TW200509249A (en) | Plasma processing apparatus | |
| TW200644117A (en) | Plasma processing apparatus and plasma processing method | |
| JP2007250967A5 (2) | ||
| TW200636851A (en) | Etching method and device | |
| TW201604954A (zh) | 電漿體蝕刻裝置 | |
| WO2009063755A1 (ja) | プラズマ処理装置および半導体基板のプラズマ処理方法 | |
| JP2009246172A (ja) | プラズマ処理装置 | |
| JP2012049376A5 (2) | ||
| WO2007038514A3 (en) | Apparatus and method for substrate edge etching | |
| CN104425202A (zh) | 等离子处理装置 | |
| CN104282610B (zh) | 承载装置及等离子体加工设备 | |
| JP2012104579A5 (2) | ||
| IL164439A0 (en) | Silicon parts for plasma reaction chambers | |
| JP2022104964A (ja) | 堆積の均一性を改善するための、様々なプロファイルを有する側部を有するシャドーフレーム | |
| JP2003264169A5 (2) | ||
| JP2002252209A5 (ja) | プラズマエッチング装置及び耐プラズマ性部材 |