JP2003266400A5 - - Google Patents
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- Publication number
- JP2003266400A5 JP2003266400A5 JP2002363162A JP2002363162A JP2003266400A5 JP 2003266400 A5 JP2003266400 A5 JP 2003266400A5 JP 2002363162 A JP2002363162 A JP 2002363162A JP 2002363162 A JP2002363162 A JP 2002363162A JP 2003266400 A5 JP2003266400 A5 JP 2003266400A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- aluminum
- silicon oxide
- oxide structure
- structure according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 239000011148 porous material Substances 0.000 description 5
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052710 silicon Chemical group 0.000 description 3
- 239000010703 silicon Chemical group 0.000 description 3
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002363162A JP2003266400A (ja) | 2002-12-13 | 2002-12-13 | シリコン酸化物ナノ構造体の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002363162A JP2003266400A (ja) | 2002-12-13 | 2002-12-13 | シリコン酸化物ナノ構造体の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002073113 Division | 2002-03-15 | 2002-03-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003266400A JP2003266400A (ja) | 2003-09-24 |
| JP2003266400A5 true JP2003266400A5 (de) | 2006-12-28 |
Family
ID=29208286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002363162A Withdrawn JP2003266400A (ja) | 2002-12-13 | 2002-12-13 | シリコン酸化物ナノ構造体の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003266400A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4865200B2 (ja) * | 2003-08-07 | 2012-02-01 | キヤノン株式会社 | ナノ構造体及びその製造方法 |
| US7524370B1 (en) | 2004-11-26 | 2009-04-28 | Fujikura Ltd. | Nanostructure and manufacturing method for same |
| JP4971612B2 (ja) * | 2005-03-25 | 2012-07-11 | キヤノン株式会社 | 構造体、その製造方法、及び該構造体を用いたデバイス |
| KR101410826B1 (ko) * | 2012-07-03 | 2014-06-23 | 한국전기연구원 | 나노구조와 미세구조가 혼재하는 초발수 표면 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2684201B2 (ja) * | 1987-11-26 | 1997-12-03 | 日立マクセル株式会社 | 磁気記録媒体 |
| JP3135110B2 (ja) * | 1995-11-29 | 2001-02-13 | 工業技術院長 | 多孔質セラミックス膜とその製造方法 |
| JP2000327491A (ja) * | 1999-05-11 | 2000-11-28 | Hitachi Maxell Ltd | 無機化合物薄膜、磁気記録媒体および磁気記録装置 |
| JP3387897B2 (ja) * | 1999-08-30 | 2003-03-17 | キヤノン株式会社 | 構造体の製造方法、並びに該製造方法により製造される構造体及び該構造体を用いた構造体デバイス |
| WO2001071394A1 (fr) * | 2000-03-21 | 2001-09-27 | Asahi Glass Company, Limited | Article antireflet et procédé de production |
-
2002
- 2002-12-13 JP JP2002363162A patent/JP2003266400A/ja not_active Withdrawn
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