JP2004236432A5 - - Google Patents

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Publication number
JP2004236432A5
JP2004236432A5 JP2003021758A JP2003021758A JP2004236432A5 JP 2004236432 A5 JP2004236432 A5 JP 2004236432A5 JP 2003021758 A JP2003021758 A JP 2003021758A JP 2003021758 A JP2003021758 A JP 2003021758A JP 2004236432 A5 JP2004236432 A5 JP 2004236432A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003021758A
Other versions
JP2004236432A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003021758A priority Critical patent/JP2004236432A/ja
Priority claimed from JP2003021758A external-priority patent/JP2004236432A/ja
Priority to US10/702,543 priority patent/US6927620B2/en
Priority to TW092131383A priority patent/TWI229491B/zh
Priority to CNB2003101207059A priority patent/CN1286256C/zh
Publication of JP2004236432A publication Critical patent/JP2004236432A/ja
Publication of JP2004236432A5 publication Critical patent/JP2004236432A5/ja
Pending legal-status Critical Current

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JP2003021758A 2003-01-30 2003-01-30 半導体装置 Pending JP2004236432A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003021758A JP2004236432A (ja) 2003-01-30 2003-01-30 半導体装置
US10/702,543 US6927620B2 (en) 2003-01-30 2003-11-07 Semiconductor device having a boosting circuit to suppress current consumption
TW092131383A TWI229491B (en) 2003-01-30 2003-11-10 Semiconductor device
CNB2003101207059A CN1286256C (zh) 2003-01-30 2003-11-28 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003021758A JP2004236432A (ja) 2003-01-30 2003-01-30 半導体装置

Publications (2)

Publication Number Publication Date
JP2004236432A JP2004236432A (ja) 2004-08-19
JP2004236432A5 true JP2004236432A5 (ja) 2006-03-09

Family

ID=32767547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003021758A Pending JP2004236432A (ja) 2003-01-30 2003-01-30 半導体装置

Country Status (4)

Country Link
US (1) US6927620B2 (ja)
JP (1) JP2004236432A (ja)
CN (1) CN1286256C (ja)
TW (1) TWI229491B (ja)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7112978B1 (en) 2002-04-16 2006-09-26 Transmeta Corporation Frequency specific closed loop feedback control of integrated circuits
US7941675B2 (en) 2002-12-31 2011-05-10 Burr James B Adaptive power control
JP4230997B2 (ja) * 2002-08-09 2009-02-25 株式会社ルネサステクノロジ 半導体装置およびそれを用いたメモリカード
JP4303930B2 (ja) * 2002-09-11 2009-07-29 Ｏｋｉセミコンダクタ株式会社 電圧発生装置
US7953990B2 (en) 2002-12-31 2011-05-31 Stewart Thomas E Adaptive power control based on post package characterization of integrated circuits
US7228242B2 (en) 2002-12-31 2007-06-05 Transmeta Corporation Adaptive power control based on pre package characterization of integrated circuits
KR100564575B1 (ko) * 2003-09-23 2006-03-29 삼성전자주식회사 부하제어 부스팅 장치, 부하량에 따라 자동적으로부스팅을 결정하고 커패시터 수가 적은 부스팅 파워시스템 및 그 방법
US7012461B1 (en) 2003-12-23 2006-03-14 Transmeta Corporation Stabilization component for a substrate potential regulation circuit
US7649402B1 (en) 2003-12-23 2010-01-19 Tien-Min Chen Feedback-controlled body-bias voltage source
US7692477B1 (en) 2003-12-23 2010-04-06 Tien-Min Chen Precise control component for a substrate potential regulation circuit
US7129771B1 (en) * 2003-12-23 2006-10-31 Transmeta Corporation Servo loop for well bias voltage source
US7774625B1 (en) 2004-06-22 2010-08-10 Eric Chien-Li Sheng Adaptive voltage control by accessing information stored within and specific to a microprocessor
US7562233B1 (en) 2004-06-22 2009-07-14 Transmeta Corporation Adaptive control of operating and body bias voltages
KR100645050B1 (ko) * 2004-10-21 2006-11-10 삼성전자주식회사 프로그램 특성을 향상시킬 수 있는 불 휘발성 메모리 장치및 그것의 프로그램 방법
KR100680503B1 (ko) * 2004-11-08 2007-02-08 주식회사 하이닉스반도체 반도체 메모리 장치의 내부전압 발생기
KR100623598B1 (ko) * 2004-12-28 2006-09-14 주식회사 하이닉스반도체 내부 전원전압 발생장치를 구비하는 반도체메모리소자
EP1750271B1 (en) * 2005-07-28 2011-05-11 STMicroelectronics Srl Multistage regulator for charge-pump boosted voltage applications
JP4728777B2 (ja) * 2005-11-02 2011-07-20 株式会社東芝 電源回路
US7427889B2 (en) * 2006-04-28 2008-09-23 Ememory Technology Inc. Voltage regulator outputting positive and negative voltages with the same offsets
JP2007325468A (ja) * 2006-06-05 2007-12-13 Toshiba Corp 電源回路
KR100818105B1 (ko) * 2006-12-27 2008-03-31 주식회사 하이닉스반도체 내부 전압 발생 회로
KR100877623B1 (ko) * 2007-02-12 2009-01-09 삼성전자주식회사 피크 전류와 전원 노이즈를 감소시키기 위한 고전압발생회로와 그 방법
DE102007007566B4 (de) * 2007-02-15 2012-08-23 Qimonda Ag Halbleiter-Bauelement-System, Speichermodul und Verfahren zum Betreiben eines Halbleiter-Bauelement-Systems
TWI363945B (en) * 2008-03-11 2012-05-11 Novatek Microelectronics Corp Voltage generator having a dynamic resistors feedback control
KR20120121590A (ko) * 2011-04-27 2012-11-06 에스케이하이닉스 주식회사 내부전압 생성회로
JP6468049B2 (ja) * 2015-04-17 2019-02-13 富士電機株式会社 内部電源回路および半導体装置
DE102016125757B4 (de) * 2016-12-28 2025-11-13 Infineon Technologies Ag Ladungspumpenanordnung und verfahren zum betreiben einer ladungspumpenanordnung
CN109036484B (zh) 2017-06-09 2021-09-07 华邦电子股份有限公司 字元线解码器电路
JP6748760B1 (ja) * 2019-05-13 2020-09-02 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
CN113515159B (zh) * 2021-04-23 2022-11-01 恒烁半导体(合肥)股份有限公司 一种自适应低功耗高压保持系统及应用

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3378457B2 (ja) * 1997-02-26 2003-02-17 株式会社東芝 半導体装置
JP3773718B2 (ja) 1999-09-20 2006-05-10 株式会社東芝 半導体集積回路
JP2002015571A (ja) 2000-06-29 2002-01-18 Toshiba Corp 電源電圧制限回路

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