JP2007111645A5 - - Google Patents

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Publication number: JP2007111645A5
Authority: JP; Japan
Prior art keywords: thin layer; hydrogen polysiloxane; silica; organic solvent; inorganic substrate
Prior art date: 2005-10-21
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP2005306720A

Other languages

English (en)

Japanese (ja)

Other versions

JP2007111645A (ja

JP4783117B2 (ja

Filing date

2005-10-21

Publication date

2008-11-27

2005-10-21 Application filed filed Critical

2005-10-21 Priority claimed from JP2005306720A external-priority patent/JP4783117B2/ja

2005-10-21 Priority to JP2005306720A priority Critical patent/JP4783117B2/ja

2006-08-17 Priority to TW095130302A priority patent/TWI403540B/zh

2006-10-23 Priority to CNA2006800391155A priority patent/CN101292060A/zh

2006-10-23 Priority to US12/090,694 priority patent/US8211993B2/en

2006-10-23 Priority to PCT/JP2006/321587 priority patent/WO2007046560A2/en

2006-10-23 Priority to KR1020087012181A priority patent/KR101333169B1/ko

2006-10-23 Priority to EP06822548A priority patent/EP1945833A2/en

2007-05-10 Publication of JP2007111645A publication Critical patent/JP2007111645A/ja

2008-11-27 Publication of JP2007111645A5 publication Critical patent/JP2007111645A5/ja

2011-09-28 Publication of JP4783117B2 publication Critical patent/JP4783117B2/ja

2011-09-28 Application granted granted Critical

2025-10-21 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

-1 polysiloxane Polymers 0.000 description 27
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 24
229920001296 polysiloxane Polymers 0.000 description 24
229910052739 hydrogen Inorganic materials 0.000 description 21
239000010410 layer Substances 0.000 description 21
239000001257 hydrogen Substances 0.000 description 19
125000004122 cyclic group Chemical group 0.000 description 17
239000000758 substrate Substances 0.000 description 17
239000003960 organic solvent Substances 0.000 description 13
239000011521 glass Substances 0.000 description 11
239000000377 silicon dioxide Substances 0.000 description 10
YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
239000000203 mixture Substances 0.000 description 9
229910004298 SiO 2 Inorganic materials 0.000 description 7
239000007788 liquid Substances 0.000 description 7
230000003287 optical effect Effects 0.000 description 6
239000010409 thin film Substances 0.000 description 5
239000011248 coating agent Substances 0.000 description 4
238000000576 coating method Methods 0.000 description 4
238000010438 heat treatment Methods 0.000 description 4
238000004519 manufacturing process Methods 0.000 description 4
239000004065 semiconductor Substances 0.000 description 4
239000007787 solid Substances 0.000 description 4
MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
229910004283 SiO 4 Inorganic materials 0.000 description 3
229910001882 dioxygen Inorganic materials 0.000 description 3
239000010408 film Substances 0.000 description 3
239000000243 solution Substances 0.000 description 3
229910001220 stainless steel Inorganic materials 0.000 description 3
239000010935 stainless steel Substances 0.000 description 3
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
229910001873 dinitrogen Inorganic materials 0.000 description 2
238000004821 distillation Methods 0.000 description 2
238000005227 gel permeation chromatography Methods 0.000 description 2
239000005304 optical glass Substances 0.000 description 2
239000000843 powder Substances 0.000 description 2
239000003586 protic polar solvent Substances 0.000 description 2
239000011347 resin Substances 0.000 description 2
229920005989 resin Polymers 0.000 description 2
238000003756 stirring Methods 0.000 description 2
238000005406 washing Methods 0.000 description 2
238000005160 1H NMR spectroscopy Methods 0.000 description 1
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
238000005481 NMR spectroscopy Methods 0.000 description 1
CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
239000004793 Polystyrene Substances 0.000 description 1
WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
235000011089 carbon dioxide Nutrition 0.000 description 1
239000011247 coating layer Substances 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
238000009833 condensation Methods 0.000 description 1
230000005494 condensation Effects 0.000 description 1
239000003085 diluting agent Substances 0.000 description 1
238000009826 distribution Methods 0.000 description 1
238000001035 drying Methods 0.000 description 1
238000010292 electrical insulation Methods 0.000 description 1
238000009501 film coating Methods 0.000 description 1
239000010436 fluorite Substances 0.000 description 1
239000007789 gas Substances 0.000 description 1
125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
230000003301 hydrolyzing effect Effects 0.000 description 1
238000007654 immersion Methods 0.000 description 1
239000011261 inert gas Substances 0.000 description 1
238000000034 method Methods 0.000 description 1
150000007522 mineralic acids Chemical class 0.000 description 1
239000011259 mixed solution Substances 0.000 description 1
238000002156 mixing Methods 0.000 description 1
239000001272 nitrous oxide Substances 0.000 description 1
239000012044 organic layer Substances 0.000 description 1
239000003495 polar organic solvent Substances 0.000 description 1
229920002223 polystyrene Polymers 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
239000010453 quartz Substances 0.000 description 1
238000007761 roller coating Methods 0.000 description 1
HRQDCDQDOPSGBR-UHFFFAOYSA-M sodium;octane-1-sulfonate Chemical compound [Na+].CCCCCCCCS([O-])(=O)=O HRQDCDQDOPSGBR-UHFFFAOYSA-M 0.000 description 1
238000004528 spin coating Methods 0.000 description 1
239000007921 spray Substances 0.000 description 1

JP2005306720A 2005-10-21 2005-10-21 シリカ系ガラス薄層付き無機質基板、その製造方法、コーテイング剤および半導体装置 Expired - Fee Related JP4783117B2 (ja)

Priority Applications (7)

Application Number	Priority Date	Filing Date	Title
JP2005306720A JP4783117B2 (ja)	2005-10-21	2005-10-21	シリカ系ガラス薄層付き無機質基板、その製造方法、コーテイング剤および半導体装置
TW095130302A TWI403540B (zh)	2005-10-21	2006-08-17	Cyclic dihydrogen polysiloxane, hydrogen polysiloxane, manufacturing method thereof, coating agent, inorganic substrate with silicon-based glass thin layer, manufacturing method thereof, and semiconductor device
PCT/JP2006/321587 WO2007046560A2 (en)	2005-10-21	2006-10-23	Inorganic substrate with a thin silica type glass layer, method of manufacturing the aforementioned substrate, coating agent, and a semiconductor device
US12/090,694 US8211993B2 (en)	2005-10-21	2006-10-23	Inorganic substrate with a thin silica type glass layer, method of manufacturing the aforementioned substrate, coating agent, and a semiconductor device
CNA2006800391155A CN101292060A (zh)	2005-10-21	2006-10-23	具有二氧化硅类玻璃薄层的无机基底，制备前述基底的方法，涂布剂和半导体器件
KR1020087012181A KR101333169B1 (ko)	2005-10-21	2006-10-23	실리카계 유리 박층을 갖는 무기 기판, 상기 기판의제조방법, 피복제 및 반도체 장치
EP06822548A EP1945833A2 (en)	2005-10-21	2006-10-23	Inorganic substrate with a thin silica type glass layer, method of manufacturing the aforementioned substrate, coating agent, and a semiconductor device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2005306720A JP4783117B2 (ja)	2005-10-21	2005-10-21	シリカ系ガラス薄層付き無機質基板、その製造方法、コーテイング剤および半導体装置

Publications (3)

Publication Number	Publication Date
JP2007111645A JP2007111645A (ja)	2007-05-10
JP2007111645A5 true JP2007111645A5 (2)	2008-11-27
JP4783117B2 JP4783117B2 (ja)	2011-09-28

Family

ID=37962909

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2005306720A Expired - Fee Related JP4783117B2 (ja)	2005-10-21	2005-10-21	シリカ系ガラス薄層付き無機質基板、その製造方法、コーテイング剤および半導体装置

Country Status (7)

Country	Link
US (1)	US8211993B2 (2)
EP (1)	EP1945833A2 (2)
JP (1)	JP4783117B2 (2)
KR (1)	KR101333169B1 (2)
CN (1)	CN101292060A (2)
TW (1)	TWI403540B (2)
WO (1)	WO2007046560A2 (2)

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JP5149512B2 (ja) *	2007-02-02	2013-02-20	東レ・ダウコーニング株式会社	液状硬化性組成物、コーテイング方法、無機質基板および半導体装置
WO2008114835A1 (ja) *	2007-03-16	2008-09-25	Jsr Corporation	膜形成用組成物およびシリ力系膜とその形成方法
JP5313478B2 (ja) *	2007-10-05	2013-10-09	東レ・ダウコーニング株式会社	セラミック状酸化ケイ素系被膜の形成方法、セラミック状酸化ケイ素系被膜を有する無機質基材の製造方法、セラミック状酸化ケイ素系被膜形成剤および半導体装置
FR2925225B1 (fr) *	2007-12-17	2010-06-11	Commissariat Energie Atomique	Dispositif generateur d'energie comprenant un convertisseur photovoltaique et un convertisseur thermoelectrique, ce dernier etant inclus au sein du substrat support du convertisseur photovoltaique
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US9336925B1 (en) *	2008-11-26	2016-05-10	Thin Film Electronics Asa	Siloxanes, doped siloxanes, methods for their synthesis, compositions containing the same, and films formed therefrom
JP5662646B2 (ja) *	2009-02-13	2015-02-04	旭化成イーマテリアルズ株式会社	ポリシロキサン系トレンチ埋め込み用縮合反応物及びトレンチ埋め込み膜の製造方法
JP5760376B2 (ja) *	2010-10-22	2015-08-12	旭硝子株式会社	支持体、ガラス基板積層体、支持体付き表示装置用パネル、オルガノポリシロキサン組成物、および表示装置用パネルの製造方法
JP2013541623A (ja) *	2010-11-02	2013-11-14	ヘンケル・チャイナ・カンパニー・リミテッド	ヒドロシリコーン樹脂およびその製造方法
FR2988906B1 (fr) *	2012-03-29	2016-05-13	Centre Nat De La Rech Scient - Cnrs -	Structure de cellule photovoltaique en couches minces avec une couche miroir.
CN103515104B (zh) *	2012-06-21	2017-09-26	日立金属株式会社	色素增感型太阳能电池用金属基板
US10121602B2 (en) *	2012-06-22	2018-11-06	Hitachi Metals, Ltd.	Metal substrate for dye-sensitized solar cell
JP6035098B2 (ja) *	2012-09-27	2016-11-30	旭化成株式会社	トレンチ埋め込み用塗布液
CN105378148B (zh) *	2013-07-16	2018-03-27	3M创新有限公司	膜的卷处理
KR102111022B1 (ko)	2014-01-17	2020-05-15	삼성디스플레이 주식회사	유기 발광 표시 장치 및 그 제조 방법
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US12325920B1 (en) *	2024-04-11	2025-06-10	Imam Mohammad Ibn Saud Islamic University	Method and system for depositing thin film on substrate

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2005
- 2005-10-21 JP JP2005306720A patent/JP4783117B2/ja not_active Expired - Fee Related
2006
- 2006-08-17 TW TW095130302A patent/TWI403540B/zh not_active IP Right Cessation
- 2006-10-23 WO PCT/JP2006/321587 patent/WO2007046560A2/en not_active Ceased
- 2006-10-23 CN CNA2006800391155A patent/CN101292060A/zh active Pending
- 2006-10-23 EP EP06822548A patent/EP1945833A2/en not_active Withdrawn
- 2006-10-23 US US12/090,694 patent/US8211993B2/en not_active Expired - Fee Related
- 2006-10-23 KR KR1020087012181A patent/KR101333169B1/ko not_active Expired - Fee Related

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