JP2007183452A - Translucent liquid crystal display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a translucent liquid crystal display device wherein adhesiveness between an organic interlayer film or an insulating layer made of SiN and an ITO layer is improved and electrochemical corrosion is eliminated and which has a transparent conductive layer made of the ITO layer whose end surface has a normal taper shape. <P>SOLUTION: When the transparent conductive layer 31 made of an ITO is formed on the surface of the organic interlayer film 19 or the insulating layer 22 made of a silicon nitride in the translucent liquid crystal display device 10, after a reflection plate is previously formed at a reflection part of the organic interlayer film 19, a modification layer 34 or 35 is formed on the surface of the organic interlayer film 19 or the insulating layer 22 made of the silicon nitride, the transparent conductive layer 31 made of an amorphous ITO is formed on the modification layer 34 or 35 and then etched in a prescribed pattern so that the end part thereof has the normal taper shape, and then the amorphous ITO is converted into a polycrystalline ITO. Plasma treatment with He or a plasma CVD method can be adopted for forming the modification layer 34 or 35. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

The present invention relates to a transflective liquid crystal display device, and in particular, the adhesive strength between an insulating layer made of an organic interlayer film or silicon nitride and a transparent conductive film made of ITO is strong and difficult to peel off. The present invention relates to a transflective liquid crystal display device that is less likely to cause the occurrence of liquid crystal.

First, as an example of a conventional transflective display device, an active matrix transflective liquid crystal display device is taken as an example, and FIG. 3 which is a plan view of several pixel portions and FIG. A brief description will be given with reference.

The conventional transflective liquid crystal display device 10 is surrounded by scanning lines Xn, Xn + 1,... And signal lines Ym, Ym + 1,. A pixel electrode 12 is provided for each region, and a reflector 24 made of a metal such as aluminum or silver is formed below the reflective portion of the pixel electrode 12. The pixel electrode 12 is connected to a pixel transistor 14 composed of a driving thin film transistor TFT.

The TFT is composed of an insulated gate field effect transistor, and its source electrode S is connected to the signal lines Ym, Ym + 1... To receive the image signal Vs, and the drain electrode D passes through the contact hole 17. It is connected to the pixel electrode 12. Furthermore, the gate electrode G of the TFT
Are connected to the scanning lines Xn, Xn + 1... So that a gate pulse Vg having a predetermined voltage is applied.

In the liquid crystal display device 10 shown here, as shown in FIG. 4, the TFTs, the scanning lines Xn, Xn + 1... And the signal lines Ym, Ym + 1. An interlayer film 19 is provided on the entire display region of the first light-transmitting substrate 11 with a predetermined height through an insulating layer 22 made of a silicon nitride layer (hereinafter referred to as SiN layer). For each pixel, the pixel electrode 12 is provided on the interlayer film 19 of the reflection part via the reflection plate 24, and the pixel electrode 12 is provided directly on the surface of the interlayer film 19 in the transmission part region. In addition, the surface of the interlayer film 19 of the reflective portion is made to be slightly uneven in order to make the reflected light diffused,
This uneven state is not shown.

Further, a common electrode 16 is provided on the second translucent substrate 15 via the color filter layer CF, and the cell gap of the reflection part is made to be half of the cell gap of the transmission part region. A top coat layer 23 is provided. The pixel electrode 12 and the common electrode 1
The liquid crystal 20 is sealed between the two.

The pixel electrode 12 and the common electrode 16 are usually formed from a transparent ITO layer. This ITO layer can be formed into a polycrystalline film by sputtering in a high temperature atmosphere, and the obtained polycrystalline ITO layer has high transmittance and low resistance. Are better. However, in the liquid crystal display device, it is necessary to etch and pattern the formed ITO layer into individual electrode shapes. However, the above-described polycrystalline ITO layer, which is excellent as a transparent electrode, has a low etching rate, so it can be etched. take time.

On the other hand, since the amorphous ITO layer has a high etching rate, it is possible to shorten the etching time by adopting this, but the amorphous ITO layer has high resistance and low transmittance, and has characteristics as an electrode. Is inferior.

Therefore, in Patent Document 1 below, an ITO layer is formed at room temperature and in a water-added atmosphere.
ITO in amorphous state by heat treatment for about 80 ° C or more for about 1 hour or more
In this state, a desired pattern is formed at a high etching rate.
About 1 hour or more (eg, about 1 hour to 3 hours) at a temperature of about 0 ° C. or more (eg, about 220 ° C.)
The invention of the manufacturing method of the ITO layer which polycrystallizes an ITO layer, lowers | hangs the resistance of a film | membrane, and raises the transmittance | permeability is disclosed by performing the heat processing (about time).
JP 2003-016858 A JP 2001-255543 A

However, in general, the interlayer film 19 is made of an insulating organic resin film such as polyimide. However, when an amorphous ITO layer is provided on the interlayer film 19, there is a firing step when the interlayer film is formed and when the amorphous ITO layer is formed. Therefore, since gas is generated from the organic resin film, the adhesion with the amorphous ITO layer is deteriorated. In addition, when the amorphous ITO layer is formed, there is a portion where the insulating layer made of the SiN layer is exposed on the surface of the substrate, but the adhesion of the amorphous ITO layer is not good even in this portion. Therefore, it was confirmed that when the amorphous ITO layer is wet-etched, the amorphous ITO layer on the insulating layer made of the organic interlayer film or SiN is etched into a reverse taper shape.

This state will be described with reference to FIGS. 5 is a cross-sectional view showing the etching state of the amorphous ITO layer provided on the surface of the interlayer film made of polyimide, and FIG.
It is sectional drawing which shows the etching state of the amorphous ITO layer provided in the surface of the insulating layer which consists of.

First, an amorphous ITO layer 31 is formed on the surface of the interlayer film 19 by a method similar to the method disclosed in Patent Document 1, and a photoresist film is formed on the surface of the amorphous ITO layer 31 so as to have a predetermined pattern. When the exposed surface of the amorphous ITO layer 31 is wet-etched with a mixed etching solution of hydrochloric acid and nitric acid as shown in FIG.
The TO layer 31 is formed with a side etching portion d1 whose end surface is reversely tapered. Similarly, when an amorphous ITO layer 31 is formed on the surface of the SiN layer 22 and then a photoresist film 32 is provided and wet-etched, as shown in FIG.
The side etching part d2 whose end surface is reversely tapered is formed.

When the reverse taper state is formed on the end face of the amorphous ITO layer 31 in this way, the amorphous ITO layer 31 is made into a polycrystalline ITO layer, the photoresist film 32 is removed, and other manufacturing stages are sequentially shipped as products. It is known that inconveniences such as a decrease in adhesion strength between a transparent conductive layer made of polycrystalline ITO and an insulating film made of an organic interlayer film or SiN and electric corrosion (see Patent Document 2) occur. ing.

The inventors of the present application stated that the above-mentioned problems of reduced adhesion strength and electrical corrosion are caused by a forward tapered end face generated during wet etching of an amorphous ITO layer provided on an organic interlayer film or an insulating film made of SiN. As a result of various experiments to obtain such a condition that can be etched in a forward taper shape, if a denatured layer is formed on the surface of an insulating film made of an organic interlayer film or SiN, a forward taper is obtained. That can be etched into a shape, and
If the reflector is provided on the modified layer of the interlayer insulating film, the adhesive strength of the reflector is weakened.
It has been found that the reflector itself may be provided directly on the surface of the interlayer insulating film, and the present invention has been completed.

That is, the present invention improves the adhesion between the organic interlayer film or the insulating film made of SiN and the ITO layer while maintaining the high adhesion strength between the organic interlayer film and the reflector, and galvanic corrosion. It is an object of the present invention to provide a transflective liquid crystal display device having a transparent conductive layer whose end face is made of an ITO layer having a forward taper shape.

In order to achieve the above object, the invention of the transflective liquid crystal display device according to claim 1 is characterized in that a reflector is provided directly on a part of the surface of the organic interlayer film for each pixel, and the organic interlayer film And a transflective liquid crystal display device in which a transparent conductive layer made of ITO (Indium Tin Oxide) is provided on the surface of the reflector, the organic interlayer film is between the organic interlayer film and the transparent conductive layer made of ITO. The modified layer is provided, and the end of the transparent conductive layer made of ITO on the modified layer is in a forward tapered state.

The invention according to claim 2 is the transflective liquid crystal display device according to claim 1, wherein the modified layer inactivates the surface of the organic interlayer film after the reflector is formed on the organic interlayer film. It is formed by plasma treatment with a gas.

The invention according to claim 3 is the transflective liquid crystal display device according to claim 1, wherein the modified layer is formed of the organic layer by plasma CVD using an inert gas as a carrier gas after forming the reflector. It is formed on an interlayer film.

According to a fourth aspect of the present invention, in the transflective liquid crystal display device according to the first aspect, the IT
The transparent conductive layer made of O is formed by forming a transparent conductive layer made of amorphous ITO, etching it into a predetermined pattern, and then converting it into polycrystalline ITO.

The invention according to claim 5 is the transflective liquid crystal display device according to any one of claims 1 to 4, wherein the surface of the organic interlayer film under the reflector has an uneven shape. .

Furthermore, in the invention of the transflective liquid crystal display device according to claim 6, a reflection plate is directly provided on a part of the surface of the organic interlayer film for each pixel, and the surfaces of the organic interlayer film and the reflection plate are provided. In the transflective liquid crystal display device in which a transparent conductive layer made of ITO is provided, and a transparent conductive layer made of ITO is also provided on the surface of the insulating layer made of silicon nitride, the organic interlayer film and silicon nitride The organic interlayer film or the silicon nitride modified layer is provided between the insulating layer made of ITO and the transparent conductive layer made of ITO, respectively, and the end of the transparent conductive layer made of ITO on the modified layer is in a forward tapered state. It is characterized by becoming.

The invention according to claim 7 is the transflective liquid crystal display device according to claim 6, wherein the denatured layer is formed by forming the reflector on the organic interlayer film, and then forming the organic interlayer film and silicon nitride. The insulating layer is made by plasma treatment with an inert gas.

The invention according to claim 8 is the transflective liquid crystal display device according to claim 6, wherein the modified layer is formed by plasma CVD using an inert gas as a carrier gas after the reflector is formed.
It is formed on the organic interlayer film and the insulating layer made of silicon nitride by the method.

The invention according to claim 9 is the transflective liquid crystal display device according to claim 6, wherein the transparent conductive layer made of ITO is etched into a predetermined pattern after the transparent conductive layer made of amorphous ITO is formed. Then, it is characterized by being made into polycrystalline ITO.

The invention according to claim 10 is the transflective liquid crystal display device according to any one of claims 6 to 9, wherein the surface of the organic interlayer film under the reflector has an uneven shape. To do.

By providing the above configuration, the present invention has the following excellent effects. That is, according to the invention according to claim 1, since the transparent electrode made of ITO is provided on the modified layer provided on the surface of the organic interlayer film, and the end portion is in a forward tapered state.
A transflective liquid crystal display device having a high adhesion strength between the transparent electrode made of O and the organic interlayer film and free from electric corrosion is obtained. In addition, since the reflection plate is directly provided on the surface of the organic interlayer film, the adhesion strength does not decrease. In addition, the transparent conductive layer in the invention which concerns on Claim 1 contains the part provided as transparent conductive wiring other than the pixel electrode provided for every pixel.

Moreover, according to the invention concerning Claim 2 and 3, while maintaining the state where the adhesion strength between a reflecting plate and an organic interlayer film is large, the surface of an organic interlayer film is modified | denatured (Claim 2). ) Or a denatured layer can be laminated on the surface of the organic interlayer film (claim 3),
A modified layer that is thermally stable and has high adhesion strength with ITO is obtained.

According to the invention of claim 4, since the amorphous ITO layer has an etching rate higher than that of polycrystalline ITO, the etching time can be shortened.
Since the layer has a lower resistance and higher transmittance than the amorphous ITO layer, the manufacturing time can be shortened, and a transflective liquid crystal display device excellent in optical characteristics and electrical characteristics can be obtained.

According to the invention of claim 5, since the light reflected by the reflector is diffused by the unevenness, a transflective liquid crystal display device with a wide viewing angle and a bright display can be obtained.

Further, according to the invention of claim 6, the transparent electrode made of ITO is provided on the modified layer provided on the surface of the organic interlayer film or the insulating layer made of silicon nitride, and the end portion is in a forward tapered state. Therefore, a display device having a high adhesion strength between the transparent electrode made of ITO and the insulating layer made of the organic interlayer film or silicon nitride can be obtained. In addition, since the reflection plate is directly provided on the surface of the organic interlayer film, the adhesion strength does not decrease. In addition, the transparent conductive layer in the invention which concerns on Claim 6 contains the part provided as transparent conductive wiring other than the pixel electrode provided for every pixel.

Moreover, according to the invention which concerns on Claim 7 and 8, while maintaining the state with the large adhesion strength between a reflecting plate and an organic interlayer film, the surface of the insulating layer which consists of an organic interlayer film and silicon nitride is provided. Since the modification layer can be laminated on the surface of the insulating layer made of the organic interlayer film and silicon nitride (claim 8), it is thermally stable and I
A modified layer having strong adhesion strength with TO is obtained.

According to the invention of claim 9, since the amorphous ITO layer has an etching rate higher than that of polycrystalline ITO, it becomes possible to shorten the etching time.
Since the TO layer has a lower resistance and higher transmittance than the amorphous ITO layer, the manufacturing time can be shortened, and a transflective liquid crystal display device excellent in optical characteristics and electrical characteristics can be obtained.

According to the invention of claim 10, since the light reflected by the reflector is diffused by the unevenness, a transflective display device with a wide viewing angle and a bright display can be obtained.

Hereinafter, embodiments of a transflective liquid crystal display device according to the present invention will be described in detail with reference to FIGS. However, in the following embodiments, an example in which a transparent electrode made of ITO is formed on an organic interlayer film or an insulating layer made of silicon nitride for embodying the technical idea of the present invention will be described taking a liquid crystal display device as an example. And is not intended to identify the present invention,
The present invention can be equally applied to various changes made without departing from the technical idea shown in the claims.

FIG. 1 shows amorphous I provided on the surface of an interlayer film made of polyimide in the embodiment.
FIG. 2 is a cross-sectional view showing the etching state of TO, and FIG. 2 is a cross-sectional view showing the etching state of amorphous ITO provided on the surface of the insulating film made of SiN in the embodiment.
The same reference numerals are given to the same components as those in FIG. The basic configuration and operation principle of the liquid crystal display device in which the transparent electrode made of ITO is formed on the interlayer film are the same as those of the conventional transflective liquid crystal display device 50 shown in FIGS. Therefore, description will be made with reference to FIGS. 3 and 4 as necessary.

The liquid crystal display device 10 according to the present embodiment is manufactured by the following steps. First, as shown in FIGS. 3 and 4, scanning lines X ₁ ,..., Xn are formed in a predetermined pattern directly on the surface of the first translucent substrate 11 or through an insulating film (not shown). Form. At this time, the gate electrode G is formed simultaneously with the scanning lines X ₁ ,.
₁ ,..., Xn. The scanning lines X ₁ ,..., Xn, the gate electrode G, and the auxiliary capacitance electrode 13 are made of a light-shielding conductive member such as Mo / Al or aluminum alloy.

Next, the surface of the first translucent substrate 11 is covered with a gate insulating film 18 made of SiN,
The amorphous-Si layer 21 is opposed to the gate electrode G through the gate insulating film 18.
Then, a metal layer made of Mo / Al / Mo is provided on the entire display region and then etched, whereby the signal lines Y ₁ ,..., Ym are connected to the scanning lines X ₁ ,. The source electrode S and the drain electrode D extending from the signal lines Y ₁ ,..., Ym are provided so as to partially overlap the amorphous-Si layer 21. Thereby, a pixel transistor 14 having a TFT structure is formed.

The drain electrode D of the pixel transistor 14 is disposed opposite to the auxiliary capacitance electrode 13 with the gate insulating film 18 interposed therebetween, whereby an auxiliary capacitance Cs is formed. Thereafter, an insulating layer 22 made of SiN is formed so as to cover each pixel transistor 14, the scanning lines Xn, Xn + 1... And the signal lines Ym, Ym + 1. 11, an interlayer film 19 made of, for example, polyimide is provided so as to have a predetermined height so as to cover the entire display area, and the interlayer film 1 of the reflective portion
Fine irregularities are provided on the surface of 9 by a conventional method. This fine unevenness makes the surface of the reflector 24 provided thereafter uneven, and diffuses the reflected light reflected by the reflector 24 to widen the viewing angle at the reflector and This is to make the display brighter. In the drawings, fine irregularities are omitted.

Thereafter, the entire surface of the interlayer film 19 is covered with, for example, aluminum metal, a photoresist is provided in a predetermined pattern by a photolithography method, and etching is performed to form a reflection plate 24 having a predetermined pattern for each pixel. The exposed interlayer film 1
The surface of 9 is modified.

Next, after forming contact holes 17 in the reflector 24 and the interlayer film 19, the entire display region is covered with a transparent conductive material made of amorphous ITO. At this time, the pixel electrode 12 portion made of amorphous ITO and the drain electrode D are electrically connected at the contact hole 17 portion. Next, after providing a photoresist in a predetermined pattern by photolithography, the exposed surface of the amorphous ITO layer is wet-etched with a mixed etching solution of hydrochloric acid and nitric acid, and the surface of the reflector 24 and the interlayer film 19 are formed for each pixel. A pixel electrode 12 made of amorphous ITO is formed on the surface. Thereafter, heat treatment is performed to polycrystallize the amorphous ITO layer, and the resistance of the film is reduced to make the pixel electrode 12 made of polycrystalline ITO.
Get. The modification process and the specific manufacturing process of the pixel electrode 12 will be described later.

Then, the first color filter substrate in which the color filter layer CF, the transparent common electrode 16 made of ITO, and the topcoat layer 23 are formed only at positions corresponding to the reflection portions on the surface of the second light-transmitting substrate 15 are provided. The transflective liquid crystal display device 10 of this embodiment is completed by facing the transparent substrate 11 and enclosing the liquid crystal 20 therebetween. The topcoat layer 23 is
It is provided so that the cell gap of the reflection part becomes 1/2 of the cell gap of the transmission part.

Here, the modification process of the surface of the interlayer film 19 and the specific manufacturing process of the pixel electrode 12 in this embodiment will be described with reference to FIG. FIG. 1 is a cross-sectional view showing an etching state of amorphous ITO provided on the surface of an interlayer film made of polyimide in the embodiment.

First, a He gas plasma treatment is performed on the surface of the first translucent substrate 11 on which the interlayer film 19 and the reflection plate 24 are formed by a conventional method. At this time, the He gas plasma comes into contact with the surface of the interlayer film 19 made of polyimide, whereby a part of the polyimide is thermally decomposed and sputtered and modified to form the modified layer 34.

Thereafter, in the same manner as the method disclosed in Patent Document 1 described above, an amorphous ITO layer is formed on the modified layer 34 by a plasma CVD method at room temperature and in a water-added atmosphere.
The amorphous ITO layer 31 is converted by performing a heat treatment of about 0 ° C. or more for about 1 hour or more.

Next, a photoresist film 32 is provided on the surface of the amorphous ITO layer 31 to have a predetermined pattern, and the exposed surface of the amorphous ITO layer 31 is wet-etched with a mixed etching solution of hydrochloric acid and nitric acid. Then, the amorphous ITO on the modified layer 34 of the interlayer film 19
As shown in FIG. 1, the layer 31 is in a state in which a side etched portion D <b> 1 having an end face that is forward tapered is formed.

Therefore, after the process, the polycrystalline ITO layer 31 is converted into a polycrystalline ITO layer, the photoresist film 32 is removed, and other manufacturing steps are sequentially performed.
Thus, the adhesive strength between the transparent conductive layer including the pixel electrode 12 and the organic interlayer film 19 is not reduced and the electric corrosion does not occur, so that a transflective liquid crystal display device having a stable quality can be obtained.

The reason why the above-described action and effect are caused by providing the modified layer 34 on the organic interlayer film 19 is presumed to be as follows. That is, since the He gas plasma is at an extremely high temperature, a part of the polyimide is thermally decomposed and sputtered when contacting the surface of the interlayer film 19 made of polyimide, but at the same time, part of the surface of the polyimide is melted. The molten polyimide is then hardened and a modified layer 34 cured is obtained.
The cured modified layer 34 has a thermally stable surface and suppresses the permeation of the gas even if gas is generated from the interlayer film 19 in the subsequent high-temperature treatment process.
Since the outflow of gas from the surface of 4 to the upper part is suppressed, it is estimated that the adhesion between the ITO layer and the modified layer 34 is improved.

In the transflective liquid crystal display device 10 according to the present embodiment, the insulating layer 22 made of SiN is generally not exposed, and therefore, the surface of the insulating layer 22 made of SiN is not exposed.
O is not provided. However, when various connection wirings in the frame portion of the transflective liquid crystal display device have a multilayer structure or when an inspection terminal is provided, an ITO layer may be provided on the surface of the insulating layer 22 made of SiN. . Even in such a case, it is effective to provide the modified layer 35 on the surface of the insulating layer 22 made of SiN.

That is, as shown in FIG. 2, a modified layer 35 is formed on the surface of the insulating film 22 made of SiN by He gas plasma in the same manner as described above, and the amorphous I is formed on the modified layer 35.
The TO layer is formed by a plasma CVD method at room temperature and in a water-added atmosphere, and is converted to the amorphous ITO layer 31 by performing a heat treatment at about 180 ° C. or more for about 1 hour after film formation.

Next, a photoresist film 32 is provided on the surface of the amorphous ITO layer 31 to have a predetermined pattern, and the exposed surface of the amorphous ITO layer 31 is wet-etched with a mixed etching solution of hydrochloric acid and nitric acid. Then, as shown in FIG. 2, the amorphous ITO layer 31 on the modified layer 35 of the insulating film 22 made of SiN is in a state in which the side etching portion D2 whose end surface is forward tapered is formed.

Accordingly, even in this case, even if the other manufacturing steps are sequentially performed, the adhesion strength between the polycrystalline ITO shipped as a product and the insulating film 22 made of SiN does not decrease and galvanic corrosion does not occur. A quality transflective liquid crystal display device is obtained.

It is sectional drawing which shows the etching state of the amorphous ITO provided in the surface of the interlayer film which consists of a polyimide in an Example. It is sectional drawing which shows the etching state of the amorphous ITO provided in the surface of the insulating film which consists of SiN in an Example. It is a top view for several pixels of the liquid crystal display device of a prior art example. It is AA sectional drawing of FIG. It is sectional drawing which shows the etching state of the amorphous ITO provided in the surface of the interlayer film which consists of polyimides. It is sectional drawing which shows the etching state of amorphous ITO provided in the surface of the insulating film which consists of SiN

Explanation of symbols

DESCRIPTION OF SYMBOLS 10, 50 Liquid crystal display device 11 1st translucent board | substrate 12 Pixel electrode 13 Auxiliary capacitance electrode 14 Pixel transistor 15 Translucent board | substrate 16 Common electrode 17 Contact hole 18 Gate insulating film 19 Interlayer film 20 Liquid crystal 21 Amorphous-Si layer 22 Insulating layer 23 made of SiN Topcoat layer 24 Reflector 31 Amorphous ITO layer 32 Photoresist film 34, 35 Modified layer CF Color filter layer d1, d2 Reverse-tapered side-etched portion D1, D2 Forward-tapered side-etched portion

Claims (10)

A direct reflector is provided on a part of the surface of the organic interlayer film for each pixel,
In the transflective liquid crystal display device in which a transparent conductive layer made of ITO (Indium Tin Oxide) is provided on the surface of the organic interlayer film and the reflector, the gap between the organic interlayer film and the transparent conductive layer made of ITO is between A transflective liquid crystal display device, wherein a modified layer of the organic interlayer film is provided, and an end of a transparent conductive layer made of ITO on the modified layer is in a forward tapered state. The said denatured layer is formed by plasma-treating the surface of the organic interlayer film with an inert gas after forming the reflector on the organic interlayer film. Transflective liquid crystal display device. 2. The transflective layer according to claim 1, wherein the denatured layer is formed on the organic interlayer film by a plasma CVD method using an inert gas as a carrier gas after the reflection plate is formed. Type liquid crystal display device. The translucent layer according to claim 1, wherein the transparent conductive layer made of ITO is formed into a polycrystalline ITO after being etched into a predetermined pattern after forming the transparent conductive layer made of amorphous ITO. Type liquid crystal display device. The transflective liquid crystal display device according to claim 1, wherein a surface of the organic interlayer film under the reflector has an uneven shape. A direct reflector is provided on a part of the surface of the organic interlayer film for each pixel,
A transflective liquid crystal display device in which a transparent conductive layer made of ITO is provided on the surfaces of the organic interlayer film and the reflector, and a transparent conductive layer made of ITO is also provided on the surface of an insulating layer made of silicon nitride. The organic interlayer film and the insulating layer made of silicon nitride and the transparent conductive layer made of ITO are provided with a modified layer of the organic interlayer film or silicon nitride, respectively, and the transparent conductive film made of ITO on the modified layer A transflective liquid crystal display device characterized in that the end of the layer is in a forward tapered state. The denatured layer is formed by plasma-treating the insulating layer made of the organic interlayer film and silicon nitride with an inert gas after forming the reflector on the organic interlayer film. The transflective liquid crystal display device according to claim 6. The modified layer is formed on the insulating layer made of the organic interlayer film and silicon nitride by plasma CVD using an inert gas as a carrier gas after the reflection plate is formed. Item 7. A transflective liquid crystal display device according to item 6. The translucent layer according to claim 6, wherein the transparent conductive layer made of ITO is formed into a polycrystalline ITO after being etched into a predetermined pattern after forming the transparent conductive layer made of amorphous ITO. Type liquid crystal display device. 10. The transflective liquid crystal display device according to claim 6, wherein a surface of the organic interlayer film under the reflector has an uneven shape.

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