JP2009060046A5 - - Google Patents

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Publication number: JP2009060046A5
Authority: JP; Japan
Prior art keywords: semiconductor layer; holes; light emitting; emitting diode; diffraction grating
Prior art date: 2007-09-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP2007228178A

Other languages

English (en)

Japanese (ja)

Other versions

JP2009060046A (ja

JP5242975B2 (ja

Filing date

2007-09-03

Publication date

2010-02-25

2007-09-03 Application filed filed Critical

2007-09-03 Priority to JP2007228178A priority Critical patent/JP5242975B2/ja

2007-09-03 Priority claimed from JP2007228178A external-priority patent/JP5242975B2/ja

2008-08-21 Priority to PCT/JP2008/002262 priority patent/WO2009031268A1/ja

2008-08-25 Priority to TW097132339A priority patent/TWI390770B/zh

2009-03-19 Publication of JP2009060046A publication Critical patent/JP2009060046A/ja

2010-02-11 Priority to US12/704,325 priority patent/US20100140651A1/en

2010-02-25 Publication of JP2009060046A5 publication Critical patent/JP2009060046A5/ja

2013-07-24 Application granted granted Critical

2013-07-24 Publication of JP5242975B2 publication Critical patent/JP5242975B2/ja

Status Expired - Fee Related legal-status Critical Current

2027-09-03 Anticipated expiration legal-status Critical

Links

239000004065 semiconductor Substances 0.000 claims 12
230000000149 penetrating effect Effects 0.000 claims 2
239000011148 porous material Substances 0.000 claims 2
238000000605 extraction Methods 0.000 claims 1
230000006798 recombination Effects 0.000 claims 1
238000005215 recombination Methods 0.000 claims 1
230000002269 spontaneous effect Effects 0.000 claims 1

JP2007228178A 2007-09-03 2007-09-03 回折格子型発光ダイオード Expired - Fee Related JP5242975B2 (ja)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP2007228178A JP5242975B2 (ja)	2007-09-03	2007-09-03	回折格子型発光ダイオード
PCT/JP2008/002262 WO2009031268A1 (ja)	2007-09-03	2008-08-21	回折格子型発光ダイオード
TW097132339A TWI390770B (zh)	2007-09-03	2008-08-25	Diffraction grating light emitting diodes
US12/704,325 US20100140651A1 (en)	2007-09-03	2010-02-11	Diffraction grating light-emitting diode

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2007228178A JP5242975B2 (ja)	2007-09-03	2007-09-03	回折格子型発光ダイオード

Publications (3)

Publication Number	Publication Date
JP2009060046A JP2009060046A (ja)	2009-03-19
JP2009060046A5 true JP2009060046A5 (2)	2010-02-25
JP5242975B2 JP5242975B2 (ja)	2013-07-24

Family

ID=40428592

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2007228178A Expired - Fee Related JP5242975B2 (ja)	2007-09-03	2007-09-03	回折格子型発光ダイオード

Country Status (4)

Country	Link
US (1)	US20100140651A1 (2)
JP (1)	JP5242975B2 (2)
TW (1)	TWI390770B (2)
WO (1)	WO2009031268A1 (2)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2011023639A (ja) *	2009-07-17	2011-02-03	Alps Electric Co Ltd	半導体発光素子
JP5300078B2 (ja) *	2009-10-19	2013-09-25	国立大学法人京都大学	フォトニック結晶発光ダイオード
KR20130093088A (ko) *	2010-08-11	2013-08-21	서울옵토디바이스주식회사	자외선 발광 다이오드 및 그 제조방법
CN102760810B (zh) *	2011-04-28	2015-01-07	展晶科技(深圳)有限公司	发光二极管晶粒及其制造方法
CN103367570B (zh) *	2012-03-30	2016-01-20	清华大学	白光led
CN109980058A (zh) *	2019-02-28	2019-07-05	江苏大学	一种具有空气孔光子晶体结构的高出光效率二极管
KR20230057142A (ko)	2021-10-21	2023-04-28	엘지디스플레이 주식회사	웨이퍼
CN116387975B (zh) *	2023-06-05	2023-12-29	福建慧芯激光科技有限公司	一种激射方向可调型稳波长边发射激光器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US141333A (en) *		1873-07-29		Improvement in the manufacture of chlorine
US173887A (en) *		1876-02-22		Improvement in horse-collar guards
FR2824228B1 (fr) *	2001-04-26	2003-08-01	Centre Nat Rech Scient	Dispositif electroluminescent a extracteur de lumiere
US7279718B2 (en) *	2002-01-28	2007-10-09	Philips Lumileds Lighting Company, Llc	LED including photonic crystal structure
JP4610863B2 (ja) *	2003-03-19	2011-01-12	フィリップスルミレッズライティングカンパニーリミテッドライアビリティカンパニー	フォトニック結晶構造を使用するｌｅｄ効率の改良
JP2006196658A (ja) *	2005-01-13	2006-07-27	Matsushita Electric Ind Co Ltd	半導体発光素子およびその製造方法
JP2006310721A (ja) *	2005-03-28	2006-11-09	Yokohama National Univ	自発光デバイス

2007
- 2007-09-03 JP JP2007228178A patent/JP5242975B2/ja not_active Expired - Fee Related
2008
- 2008-08-21 WO PCT/JP2008/002262 patent/WO2009031268A1/ja not_active Ceased
- 2008-08-25 TW TW097132339A patent/TWI390770B/zh not_active IP Right Cessation
2010
- 2010-02-11 US US12/704,325 patent/US20100140651A1/en not_active Abandoned

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