JP2009123720A5 - - Google Patents

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Publication number
JP2009123720A5
JP2009123720A5 JP2007292542A JP2007292542A JP2009123720A5 JP 2009123720 A5 JP2009123720 A5 JP 2009123720A5 JP 2007292542 A JP2007292542 A JP 2007292542A JP 2007292542 A JP2007292542 A JP 2007292542A JP 2009123720 A5 JP2009123720 A5 JP 2009123720A5
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JP
Japan
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Application number
JP2007292542A
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JP5125433B2 (ja
JP2009123720A (ja
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Priority to JP2007292542A priority Critical patent/JP5125433B2/ja
Priority claimed from JP2007292542A external-priority patent/JP5125433B2/ja
Priority to TW097136467A priority patent/TWI397996B/zh
Priority to US12/265,887 priority patent/US7923738B2/en
Priority to CN200810174575XA priority patent/CN101431092B/zh
Publication of JP2009123720A publication Critical patent/JP2009123720A/ja
Publication of JP2009123720A5 publication Critical patent/JP2009123720A5/ja
Application granted granted Critical
Publication of JP5125433B2 publication Critical patent/JP5125433B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007292542A 2007-11-09 2007-11-09 半導体発光装置及びその製造方法 Expired - Fee Related JP5125433B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007292542A JP5125433B2 (ja) 2007-11-09 2007-11-09 半導体発光装置及びその製造方法
TW097136467A TWI397996B (zh) 2007-11-09 2008-09-23 Semiconductor light emitting device and manufacturing method thereof
US12/265,887 US7923738B2 (en) 2007-11-09 2008-11-06 LED array for microdisplays or like application
CN200810174575XA CN101431092B (zh) 2007-11-09 2008-11-10 半导体发光装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007292542A JP5125433B2 (ja) 2007-11-09 2007-11-09 半導体発光装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2009123720A JP2009123720A (ja) 2009-06-04
JP2009123720A5 true JP2009123720A5 (ja) 2010-07-22
JP5125433B2 JP5125433B2 (ja) 2013-01-23

Family

ID=40622880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007292542A Expired - Fee Related JP5125433B2 (ja) 2007-11-09 2007-11-09 半導体発光装置及びその製造方法

Country Status (4)

Country Link
US (1) US7923738B2 (ja)
JP (1) JP5125433B2 (ja)
CN (1) CN101431092B (ja)
TW (1) TWI397996B (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201017863A (en) * 2008-10-03 2010-05-01 Versitech Ltd Semiconductor color-tunable broadband light sources and full-color microdisplays
JP5380754B2 (ja) * 2010-02-12 2014-01-08 日立金属株式会社 窒化物半導体自立基板の製造方法および窒化物半導体デバイスの製造方法
KR101650518B1 (ko) 2010-09-13 2016-08-23 에피스타 코포레이션 발광 구조체
US20120306390A1 (en) * 2011-06-03 2012-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Architecture for Supporting Modulized Full Operation Junction Ultra High Voltage (UHV) Light Emitting Diode (LED) Device
CN102244087A (zh) * 2011-07-29 2011-11-16 贵州大学 可控功率倒装阵列led芯片及其制造方法
US9356212B2 (en) * 2012-12-21 2016-05-31 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same
CN107768399B (zh) 2012-12-21 2022-02-18 首尔伟傲世有限公司 发光二极管
TWI634652B (zh) * 2016-08-15 2018-09-01 趨勢照明股份有限公司 Wafer-level microdisplay with dot matrix light emitting diode light source and manufacturing method thereof
JP7054031B2 (ja) * 2020-01-31 2022-04-13 日亜化学工業株式会社 発光モジュールの製造方法
CN112885936B (zh) * 2020-12-01 2022-04-22 北京工业大学 一种透明电极结构的Micro-LED阵列及制备方法
JP2024141991A (ja) * 2023-03-29 2024-10-10 セイコーエプソン株式会社 画像形成装置、及び、電子機器
JP2024141969A (ja) * 2023-03-29 2024-10-10 セイコーエプソン株式会社 画像形成装置、及び、電子機器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5067600A (ja) * 1973-10-15 1975-06-06
JPS54102886A (en) * 1978-01-31 1979-08-13 Futaba Denshi Kogyo Kk Light emitting diode indicator
JPS6258692A (ja) * 1985-09-09 1987-03-14 Furukawa Electric Co Ltd:The 半導体発光装置の製造方法
JPH0213988A (ja) * 1988-07-01 1990-01-18 Inobeeshiyon Center Kk 多色ディスプレイとその製造方法
JP2879971B2 (ja) * 1990-11-30 1999-04-05 株式会社日立製作所 受発光複合素子
US5811839A (en) * 1994-09-01 1998-09-22 Mitsubishi Chemical Corporation Semiconductor light-emitting devices
TW502352B (en) * 1996-01-25 2002-09-11 Rohm Co Ltd Semiconductor light emitting element and method for making the same
JP3691934B2 (ja) * 1996-06-17 2005-09-07 株式会社東芝 窒化ガリウム系化合物半導体発光デバイス及びその製造方法
JP3492862B2 (ja) * 1996-08-29 2004-02-03 京セラ株式会社 発光ダイオードアレイの製造方法
JP3701102B2 (ja) * 1997-05-28 2005-09-28 沖電気工業株式会社 Ｌｅｄアレイ
JP4292651B2 (ja) * 1999-09-30 2009-07-08 沖電気工業株式会社 Ｌｅｄアレイチップ及びその製造方法
JP2001196629A (ja) * 2000-01-07 2001-07-19 Denso Corp 半導体発光装置及びその製造方法
JP2003094720A (ja) * 2001-09-21 2003-04-03 Ricoh Co Ltd 発光ダイオード素子アレイとそれを用いた画像形成装置、及びその発光ダイオード素子アレイの製造方法
JP2004195946A (ja) 2002-12-20 2004-07-15 Kyocera Corp 光プリンタヘッド
KR20070093271A (ko) * 2006-03-13 2007-09-18 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법

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