JP2009123744A - Measurement board and temperature measurement board - Google Patents

Abstract

【Task】
A wiring is fixed to the substrate without using an adhesive or a welding agent, and a low warpage measurement substrate is manufactured.
[Solution]
The measurement substrate and the temperature measurement substrate are formed by laminating a diffusion prevention layer, a first adhesion layer, a wiring, a second adhesion layer, and a protective layer on the substrate. The substrate is manufactured from the same material as the semiconductor wafer. The diffusion prevention layer has a function of preventing the wiring components from diffusing into the substrate. The first adhesion layer has a function of bringing the wiring into close contact with the substrate via the diffusion preventing layer. The wiring is made of a conductive wire or foil. The second adhesion layer has a function of bringing the wiring and the protective layer into close contact. The protective layer has an effect of preventing the wiring from being oxidized, insulating from the outside, and preventing scratches by covering the wiring.
[Selection] Figure 2

Description

  The present invention is a temperature measurement device mounted on a temperature adjustment stage used in a manufacturing process of a measurement substrate having a wiring, for example, a semiconductor wafer, and measuring the temperature adjustment level of the temperature adjustment stage with respect to the semiconductor wafer by the wiring provided on the substrate. The present invention relates to a measurement substrate, and more particularly to a method of providing wiring.

  A substrate of a semiconductor wafer becomes a product through a plurality of processing steps such as thin film formation and etching. Such a process requires strict temperature control. Therefore, the substrate is placed on the temperature adjustment stage, and each process is performed while adjusting the temperature of the substrate by the temperature adjustment stage. At this time, it is not possible to immediately measure the temperature of the substrate and adjust the temperature adjustment level of the temperature adjustment stage. Therefore, a relationship between the operation of the temperature adjustment stage and the temperature distribution of the substrate is measured in advance using a temperature measurement substrate, and the temperature adjustment stage is adjusted based on the relationship in an actual process.

  In general, a temperature measurement substrate is made of the same material as that of a semiconductor wafer substrate, and a wiring having a heat sensitive portion is provided at a location where the temperature of the substrate surface or surface layer is desired to be measured. For the wiring, a resistance thermometer that places a resistive element in the heat sensitive part, a thermocouple that places a connection point of dissimilar metal in the heat sensitive part, or the like is used. For example, Patent Documents 1 to 3 are disclosed as methods of providing wiring on a substrate.

Patent Document 1 discloses a method of providing a resistance temperature detector on a substrate by fixing a resistance element to the substrate surface with a cold welding agent and drawing out a lead wire from the resistance element. In Patent Document 2, as a method of providing a thermocouple to a substrate, a thermosensitive portion of a thermocouple is embedded in a through hole drilled in the substrate, an adhesive is filled in the through hole, and the strand of the thermocouple is attached to the substrate surface. Is disclosed. Patent Document 3 discloses, as a method of providing a resistance temperature detector on a substrate, forming a heat sensitive portion and a lead wire drawn from the heat sensitive portion on a film, and bonding the film and the substrate with an adhesive. .
Japanese Patent Laid-Open No. 10-9963 JP 2003-86649 A JP 2006-78478 A

  In the inventions shown in Patent Documents 1 to 3, the wiring is fixed to the substrate using an adhesive or a welding agent. However, the shape and properties of the adhesive and the welding agent change and deteriorate according to heat reception and the passage of time. Such deterioration causes an error in the measured value. Further, bubbles are generated with the thermal decomposition of the adhesive and the welding agent, and the wiring may be peeled off from the substrate. Moreover, there is a possibility that the strand of the thermocouple drawn out from the heat sensitive part is caught outside and damages the thermocouple. Thus, there is a problem in fixing the wiring to the substrate using an adhesive or a welding agent.

There is also a problem that the adhesive is likely to be warped easily due to thermal expansion.
The primary model of warping when members are bonded together is roughly
Stress = Thickness difference × Adhesive force development temperature difference × Young's modulus difference × Linear expansion difference For example, when an adhesive is applied to the substrate, the stress generated on the substrate is determined by the thickness difference, adhesive force expression temperature, Young's modulus difference, and linear expansion difference. In particular, when a film provided with wiring is attached to the substrate with an adhesive, the thickness of the adhesive is required to be about twice that of the wiring. The stress generated in In other words, using an adhesive causes warping of the substrate.

  The present invention has been made in view of such a situation, and an object of the present invention is to fix a wiring to a substrate without using an adhesive or a welding agent to produce a low warpage measurement substrate.

Therefore, the present invention
In a measurement substrate in which a physical quantity generated in a semiconductor substrate is measured through wiring provided on the substrate,
A diffusion preventing layer for preventing the wiring components from diffusing into the substrate;
A protective layer to prevent wiring oxidation and sulfuration;
A metal first adhesion layer that adheres the wiring to the substrate through the diffusion prevention layer;
A second adhesive layer made of metal that adheres the wiring and the protective layer;
The diffusion prevention layer, the first adhesion layer, the wiring, the second adhesion layer, and the protective layer are laminated in this order from the substrate side.

Further, the present invention provides a measurement substrate,
A groove is formed on the upper surface of the substrate, and a diffusion prevention layer, a first adhesion layer, a wiring, a second adhesion layer, and a protective layer are embedded in this groove in this order.

Further, the present invention provides a measurement substrate,
The diffusion prevention layer, the first adhesion layer, the wiring, and the second adhesion layer are sequentially laminated on the upper surface of the substrate, and a protective layer is further laminated on the upper surface of the substrate and the upper surface of the second adhesion layer.

The present invention also provides
In a temperature measurement substrate provided with a wiring having a heat sensitive part on a semiconductor substrate,
A diffusion preventing layer for preventing the wiring components from diffusing into the substrate;
A protective layer to prevent wiring oxidation and sulfuration;
A metal first adhesion layer that adheres the wiring to the substrate through the diffusion prevention layer;
A second adhesive layer made of metal that adheres the wiring and the protective layer;
The diffusion prevention layer, the first adhesion layer, the wiring, the second adhesion layer, and the protective layer are laminated in this order from the substrate side.

Further, the present invention provides a temperature measurement substrate,
A groove is formed on the upper surface of the substrate, and a diffusion prevention layer, a first adhesion layer, a wiring, a second adhesion layer, and a protective layer are embedded in this groove in this order.

Further, the present invention provides a temperature measurement substrate,
The diffusion prevention layer, the first adhesion layer, the wiring, and the second adhesion layer are sequentially laminated on the upper surface of the substrate, and a protective layer is further laminated on the upper surface of the substrate and the upper surface of the second adhesion layer.

  The measurement substrate and the temperature measurement substrate according to the present invention are formed by laminating a diffusion prevention layer, a first adhesion layer, a wiring, a second adhesion layer, and a protection layer on the substrate. The substrate is made of the same material as the semiconductor wafer and is made of, for example, Si. The diffusion prevention layer has a function of preventing the wiring components from diffusing into the substrate, and is formed of, for example, an oxide film or a nitride film such as SiO2, Cr2O3, Al2O3, AlN. The first adhesion layer has a function of bringing the wiring into close contact with the substrate through the diffusion prevention layer, and is formed of, for example, a metal such as Ti, Cr, or Al. The wiring is made of a conductive wire or foil, and is formed of a pure metal or alloy such as Cu, Pt, Au, or Ag. The second adhesion layer has a function of bringing the wiring and the protective layer into close contact, and is formed of a metal such as Ti, Cr, or Al. The protective layer covers the wiring and has an effect of preventing the wiring from being oxidized and sulfurized, insulating from the outside, and preventing scratches. For example, the protective layer is formed of an oxide film or a nitride film such as Cr2O3, Al2O3, or AlN.

  As a lamination form of each layer with respect to the substrate, a diffusion prevention layer, a first adhesion layer, a wiring, a second adhesion layer, and a protection layer may be embedded in a groove formed on the substrate upper surface, or a flat substrate upper surface. The diffusion preventing layer, the first adhesion layer, the wiring, and the second adhesion layer may be laminated, and a protective layer may be laminated on the upper surface of the substrate and the second adhesion layer.

  According to the present invention, it is possible to fix the wiring to the substrate without using an adhesive or a welding agent. Since a member whose shape and properties change with the passage of time is not used for the temperature measurement substrate, an error does not occur in the temperature measurement value due to the shape change or property change of the member. Further, since such a member is not used, the wiring does not peel off from the substrate.

  Further, according to the present invention, since no adhesive is used, the warpage of the substrate due to the adhesive layer does not occur. In addition, since the thickness difference between the layers can be reduced, a low warpage measurement substrate can be realized.

  In addition, when an adhesive is used, there is a limitation on the thickness of the material, and it is impossible to cope with low warpage by controlling the deposition rate during deposition. Since the degree is high, it is possible to cope with low warpage by controlling the film formation rate.

  Embodiments of the present invention will be described below with reference to the drawings.

  FIG. 1 is a plan view of a temperature measurement substrate.

  The substrate for temperature measurement 1 is formed by forming a desired number of wiring patterns 20 on the substrate 10. The wiring pattern 20 includes a heat sensitive part 20a made of meandering wiring, four lead wires 20b drawn from the heat sensitive part 20a, and a terminal 20c located at an end of the lead wire 20b. A pair of terminals 20c is a current terminal and a pair is a voltage terminal. The terminal 20c is electrically connected to a terminal of a temperature measuring device (not shown). An electrical signal corresponding to a physical quantity of the substrate 10, that is, temperature, strain, and the like is generated in the wiring of the heat sensitive unit 20a, and the signal is measured by a temperature measuring device. When the wiring provided in the wiring pattern 20 is used as a resistance temperature detector, the temperature measuring device energizes the current terminal of the terminal 20c and measures the voltage drop in the heat sensitive part 20a at the voltage terminal of the terminal 20c. Then, the resistance value is obtained and the temperature is calculated based on the resistance value. When the wiring provided in the wiring pattern 20 is used as a thermocouple, the temperature measuring device measures the thermoelectromotive force generated at the voltage terminal of the terminals 20c and calculates the temperature.

  FIG. 2 is a diagram showing the first embodiment, and corresponds to a cross-sectional view around one wiring pattern in the AA cross section of FIG. 1. In the first embodiment, the cross-sectional structure of the wiring pattern 20 is not limited to the AA cross section, but is a structure as shown in FIG.

  A groove 11 is formed on the upper surface of the substrate 10 according to the wiring pattern 20. A thin-film diffusion prevention layer 21 is stacked along the inner surface of the groove 11 and the upper surface of the substrate 10. A thin film-like first adhesion layer 22 is laminated along the upper surface of the diffusion preventing layer 21. Further, the wiring 23 is laminated along the upper surface of the first adhesion layer 22 inside the groove 11. A thin film-like second adhesion layer 24 is laminated along the upper surface of the wiring 23. A protective layer 25 is laminated on the upper surface of the second adhesion layer 24. In this way, in the groove 11 formed in the substrate 10, the diffusion prevention layer 21, the first adhesion layer 22, the wiring 23, the second adhesion layer 24, and the protective layer 25 are embedded in this order. The wiring 23 is fixed to the substrate 10 with the first adhesion layer 22, and no adhesive or welding agent is used.

  The substrate 10 is made of the same material as a general semiconductor wafer, and is made of, for example, Si. However, if the wiring 23 is in direct contact with the substrate 10, the components of the wiring 23 may diffuse into the substrate 10. In such a case, the substrate 10 changes in quality so that an accurate temperature cannot be measured. Therefore, in the first embodiment, the diffusion prevention layer 21 is interposed between the substrate 10 and the wiring 23. The diffusion prevention layer 21 has a function of preventing the components of the wiring 23 from diffusing into the substrate 10, and is formed of, for example, an oxide film or a nitride film such as SiO2, Cr2O3, Al2O3, AlN.

  In the first embodiment, in order to fix the wiring 23 to the substrate 10, the first adhesion layer 22 is interposed between the substrate 10 and the wiring 23 instead of the adhesive or the welding agent. In order to fix the protective layer 25, a second adhesion layer 24 is interposed between the wiring 23 and the protective layer 25. The first adhesion layer 22 has a function of bringing the wiring 23 into close contact with the substrate 10 via the diffusion prevention layer 21 and is made of, for example, a metal such as Ti, Cr, or Al. Similarly to the first adhesion layer 22, the second adhesion layer 24 is formed of a metal such as Ti, Cr, or Al.

  The wiring 23 is made of a conductive wire or foil, and is made of a pure metal or alloy such as Cu, Pt, Au, or Ag. When the wiring 23 is used as a resistance temperature detector, it is desirable to increase the length of the heat sensitive part 20a. This is because the resistance value becomes large and measurement is easy. In the present embodiment, as an example, the wiring pattern of the heat sensitive portion 20a is a meander, but other forms, for example, a circular shape may be used. When the wiring 23 is used as a thermocouple, the wiring 23 is formed by joining different metals. In this case, a junction point of dissimilar metals may be provided in the heat sensitive part 20a, and it is not necessary to increase the length in the heat sensitive part 20a unlike a resistance temperature detector, and the wiring pattern does not need to be a meander.

  The protective layer 25 covers the wiring 23 to prevent the wiring 23 from being oxidized or sulfurized, to insulate the wiring 23 from the outside, and to prevent the wiring 23 from being damaged by an external force. Sealing makes it difficult to separate the wiring 23 from the substrate 20. The protective layer 25 is formed of, for example, an oxide film or a nitride film such as Cr2O3, Al2O3, or AlN selected from the Ellingham diagram.

  Although an example of the material of the diffusion prevention layer 21, the first adhesion layer 22, the wiring 23, the second adhesion layer 24, and the protective layer 25 has been shown, the material of each layer should be the optimal depending on the material of the other layers. It is desirable to choose. Similarly, it is desirable to select an optimum thickness for each layer. This is because the combination of materials between the layers is compatible, and depending on the compatibility and the thickness of the layers, the function of each layer can be enhanced, and the warpage during thermal load can be reduced.

  In the first embodiment, it is only necessary that the wiring 23 is embedded at least inside the groove 11 via the diffusion prevention layer 21 and the first adhesion layer 22, and as shown in FIG. The diffusion preventing layer 21, the first adhesion layer 22, the second adhesion layer 24, and the protective layer 25 are not necessarily laminated. Further, the protective layer 25 may not be embedded in the groove 11. That is, if the wiring 11 is embedded in the groove 11 via the diffusion prevention layer 21 and the first adhesion layer 22, and the wiring 23 is covered by the protective layer 25 via the second adhesion layer 24. Any form may be used.

  The temperature measurement substrate 1 in the first embodiment can be manufactured, for example, as follows. First, the groove 11 is formed on the upper surface of the substrate 10 according to the desired wiring pattern 20, and the diffusion prevention layer 21, the first adhesion layer 22, the wiring 23, and the second adhesion layer 24 are formed on the formed groove 11 and the upper surface of the substrate 10. The wiring 23 is sealed inside the groove 11 by sequentially laminating, polishing an excess portion by chemical mechanical polishing, and finally forming a protective layer 25 on the surface to be polished. As an example, a dual damascene process via filling plating technique can be used.

  According to the first embodiment, since the wiring is in close contact with the substrate with the metal adhesion layer and the wiring is embedded in the groove, the wiring can be fixed to the substrate without using an adhesive or a welding agent. It becomes possible. Since a member whose shape and properties change with the passage of time is not used for the temperature measurement substrate, an error does not occur in the temperature measurement value due to the shape change or property change of the member. Further, since such a member is not used, the wiring does not peel off from the substrate.

  Further, according to the first embodiment, since no adhesive is used, the warpage of the substrate due to the adhesive layer does not occur. Moreover, since the thickness difference of each layer can be made small. Therefore, a low warpage measurement substrate can be realized.

In addition, when an adhesive is used, there is a limitation on the thickness of the material, and it is impossible to cope with the low warp by controlling the deposition rate during deposition. However, according to the first embodiment, the thickness of the material is limited. In the first embodiment, the wiring 23 and the like are embedded in the groove 11 formed in the substrate 10 in the first embodiment. The wiring 23 or the like may be laminated on the surface of the substrate 10 instead of the substrate 11. Such an embodiment will be described as a second embodiment.

  FIG. 4 is a diagram showing the second embodiment, and corresponds to a sectional view around one wiring pattern in the AA section of FIG. In the second embodiment, the cross-sectional structure of the wiring pattern 20 is not limited to the AA cross section, but is a structure as shown in FIG.

  A thin-film diffusion prevention layer 21 corresponding to the wiring pattern 20 is laminated on the substrate 10 along the upper surface thereof. A thin film-like first adhesion layer 22 is laminated along the upper surface of the diffusion preventing layer 21. Further, the wiring 23 is laminated along the upper surface of the first adhesion layer 22. A thin film-like second adhesion layer 24 is laminated along the upper surface of the wiring 23. A protective layer 25 is laminated on the upper surface of the wiring 23 and the upper surface of the substrate 10. As described above, the diffusion prevention layer 21, the first adhesion layer 22, the wiring 23, the second adhesion layer 24, and the protective layer 25 are sequentially laminated on the substrate 10. The wiring 23 is fixed to the substrate 10 with the first adhesion layer 22, and no adhesive or welding agent is used. The function and material of each layer are the same as in the first embodiment.

  The temperature measurement substrate 1 in the second embodiment can be manufactured as follows, for example. First, the diffusion prevention layer 21 is formed on the upper surface of the substrate 10, the first adhesion layer 22 is formed on the upper surface of the diffusion prevention layer 21, and the wiring 23 is further formed on the upper surface of the first adhesion layer 22. Further, a second adhesion layer 24 is formed on the upper surface of the wiring 23, and each layer is left for the wiring pattern 20 by etching or microblasting. Finally, the second adhesion layer 24 is formed on the upper surface of the substrate 10 and the upper surface of the second adhesion layer 24. A protective layer 25 is formed to seal the wiring 23.

  Alternatively, after applying a metal mask to the substrate 10, the diffusion prevention layer 21, the first adhesion layer 22, the wiring 23, and the second adhesion layer 24 corresponding to the wiring pattern 20 are laminated by film formation or printing, and the substrate 10 is laminated. The protective layer 25 may be formed on the upper surface of the second adhesive layer 24 and the upper surface of the second adhesion layer 24 to seal the wiring 23.

  According to the second embodiment, since the wiring is adhered to the substrate with the metal adhesion layer, the wiring can be fixed to the substrate without using an adhesive or a welding agent. Since a member whose shape and properties change with the passage of time is not used for the temperature measurement substrate, an error does not occur in the temperature measurement value due to the shape change or property change of the member. Further, since such a member is not used, the wiring does not peel off from the substrate.

  Further, according to the second embodiment, since no adhesive is used, the warpage of the substrate due to the adhesive layer does not occur. In addition, since the thickness difference between the layers can be reduced, a low warpage measurement substrate can be realized.

In addition, when an adhesive is used, there is a limitation on the thickness of the material, and it is impossible to cope with the low warp by controlling the deposition rate during deposition. However, according to the second embodiment, the thickness of the material is limited. Since the degree of freedom is large and the degree of freedom can be controlled, it is possible to cope with low warpage by controlling the film formation rate. In the above embodiment, the case where the present invention is applied to a temperature measurement substrate has been described. It can also be applied when used as a gauge.

It is a top view of a substrate for temperature measurement. It is a figure which shows 1st Embodiment. It is a figure which shows another form of 1st Embodiment. It is a figure which shows 2nd Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Temperature measurement board | substrate, 10 ... Board | substrate, 11 ... Groove, 20 ... Wiring pattern,
21 ... Diffusion prevention layer, 22 ... First adhesion layer, 23 ... Wiring, 24 ... Second adhesion layer,
25 ... Protective layer

Claims (6)

In a measurement substrate in which a physical quantity generated in a semiconductor substrate is measured through wiring provided on the substrate,
A diffusion preventing layer for preventing the wiring components from diffusing into the substrate;
A protective layer to prevent wiring oxidation and sulfuration;
A metal first adhesion layer that adheres the wiring to the substrate through the diffusion prevention layer;
A second adhesive layer made of metal that adheres the wiring and the protective layer;
A measurement substrate comprising a diffusion prevention layer, a first adhesion layer, a wiring, a second adhesion layer, and a protective layer laminated in this order from the substrate side. The measurement substrate according to claim 1, wherein a groove is formed on the upper surface of the substrate, and a diffusion prevention layer, a first adhesion layer, a wiring, a second adhesion layer, and a protective layer are embedded in this groove in this order. The diffusion prevention layer, the first adhesion layer, the wiring, and the second adhesion layer are laminated in this order on the upper surface of the substrate, and a protective layer is further laminated on the upper surface of the substrate and the upper surface of the second adhesion layer. Measurement board. In a temperature measurement substrate provided with a wiring having a heat sensitive part on a semiconductor substrate,
A diffusion preventing layer for preventing the wiring components from diffusing into the substrate;
A protective layer to prevent wiring oxidation and sulfuration;
A metal first adhesion layer that adheres the wiring to the substrate through the diffusion prevention layer;
A second adhesive layer made of metal that adheres the wiring and the protective layer;
A temperature measurement substrate comprising: a diffusion preventing layer, a first adhesion layer, a wiring, a second adhesion layer, and a protective layer, which are laminated in this order from the substrate side. The substrate for temperature measurement according to claim 4, wherein a groove is formed on the upper surface of the substrate, and a diffusion preventing layer, a first adhesion layer, a wiring, a second adhesion layer, and a protective layer are embedded in this groove in this order. 5. The diffusion prevention layer, the first adhesion layer, the wiring, and the second adhesion layer are sequentially laminated on the upper surface of the substrate, and a protective layer is further laminated on the upper surface of the substrate and the upper surface of the second adhesion layer. Temperature measurement board.

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