JP2009152251A5 - - Google Patents

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Publication number
JP2009152251A5
JP2009152251A5 JP2007326584A JP2007326584A JP2009152251A5 JP 2009152251 A5 JP2009152251 A5 JP 2009152251A5 JP 2007326584 A JP2007326584 A JP 2007326584A JP 2007326584 A JP2007326584 A JP 2007326584A JP 2009152251 A5 JP2009152251 A5 JP 2009152251A5
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JP
Japan
Prior art keywords
optical system
projection optical
axis
exposure apparatus
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007326584A
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English (en)
Japanese (ja)
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JP2009152251A (ja
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Publication date
Application filed filed Critical
Priority to JP2007326584A priority Critical patent/JP2009152251A/ja
Priority claimed from JP2007326584A external-priority patent/JP2009152251A/ja
Priority to TW097147414A priority patent/TW200942975A/zh
Priority to KR1020080125683A priority patent/KR20090066218A/ko
Priority to US12/334,675 priority patent/US20090153828A1/en
Publication of JP2009152251A publication Critical patent/JP2009152251A/ja
Publication of JP2009152251A5 publication Critical patent/JP2009152251A5/ja
Pending legal-status Critical Current

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JP2007326584A 2007-12-18 2007-12-18 露光装置、露光方法及びデバイス製造方法 Pending JP2009152251A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007326584A JP2009152251A (ja) 2007-12-18 2007-12-18 露光装置、露光方法及びデバイス製造方法
TW097147414A TW200942975A (en) 2007-12-18 2008-12-05 Exposure apparatus, exposure method, and semiconductor device fabrication method
KR1020080125683A KR20090066218A (ko) 2007-12-18 2008-12-11 노광장치, 노광 방법 및 디바이스 제조 방법
US12/334,675 US20090153828A1 (en) 2007-12-18 2008-12-15 Exposure apparatus, exposure method, and device fabrication method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007326584A JP2009152251A (ja) 2007-12-18 2007-12-18 露光装置、露光方法及びデバイス製造方法

Publications (2)

Publication Number Publication Date
JP2009152251A JP2009152251A (ja) 2009-07-09
JP2009152251A5 true JP2009152251A5 (2) 2011-02-03

Family

ID=40752758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007326584A Pending JP2009152251A (ja) 2007-12-18 2007-12-18 露光装置、露光方法及びデバイス製造方法

Country Status (4)

Country Link
US (1) US20090153828A1 (2)
JP (1) JP2009152251A (2)
KR (1) KR20090066218A (2)
TW (1) TW200942975A (2)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010041746A1 (de) * 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage der EUV-Mikrolithographie und Verfahren zur mikrolithographischen Belichtung
DE102012205096B3 (de) * 2012-03-29 2013-08-29 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit mindestens einem Manipulator
DE102015209051B4 (de) * 2015-05-18 2018-08-30 Carl Zeiss Smt Gmbh Projektionsobjektiv mit Wellenfrontmanipulator sowie Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage
JP6730850B2 (ja) * 2016-06-01 2020-07-29 キヤノン株式会社 露光条件の決定方法、プログラム、情報処理装置、露光装置、および物品製造方法
JP6477850B2 (ja) * 2017-12-15 2019-03-06 株式会社ニコン 算出装置及び方法、プログラム、並びに露光方法
EP3702839B1 (en) 2019-02-27 2021-11-10 ASML Netherlands B.V. Method of reducing effects of lens heating and/or cooling in a lithographic process
JP7390804B2 (ja) 2019-05-17 2023-12-04 キヤノン株式会社 露光装置、露光方法、決定方法および物品製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6304317B1 (en) * 1993-07-15 2001-10-16 Nikon Corporation Projection apparatus and method
JP3368091B2 (ja) * 1994-04-22 2003-01-20 キヤノン株式会社 投影露光装置及びデバイスの製造方法
TWI256484B (en) * 2000-02-23 2006-07-01 Asml Netherlands Bv Method of measuring aberration in an optical imaging system
JP4005763B2 (ja) * 2000-06-30 2007-11-14 株式会社東芝 投影光学系の収差補正方法及び半導体装置の製造方法
WO2002054036A1 (en) * 2000-12-28 2002-07-11 Nikon Corporation Imaging characteristics measuring method, imaging characteriatics adjusting method, exposure method and system, program and recording medium, and device producing method
DE10124474A1 (de) * 2001-05-19 2002-11-21 Zeiss Carl Mikrolithographisches Belichtungsverfahren sowie Projektionsobjektiv zur Durchführung des Verfahrens
JP4029838B2 (ja) * 2001-07-05 2008-01-09 株式会社ニコン 光リソグラフィー用光学部材とその評価方法
DE10146499B4 (de) * 2001-09-21 2006-11-09 Carl Zeiss Smt Ag Verfahren zur Optimierung der Abbildungseigenschaften von mindestens zwei optischen Elementen sowie Verfahren zur Optimierung der Abbildungseigenschaften von mindestens drei optischen Elementen
JP2004111579A (ja) * 2002-09-17 2004-04-08 Canon Inc 露光方法及び装置
EP1496397A1 (en) * 2003-07-11 2005-01-12 ASML Netherlands B.V. Method and system for feedforward overlay correction of pattern induced distortion and displacement, and lithographic projection apparatus using such a method and system
JP2005051145A (ja) * 2003-07-31 2005-02-24 Nikon Corp 露光方法及び露光装置
JP2005175407A (ja) * 2003-12-15 2005-06-30 Canon Inc 計測方法及び装置、それを利用した露光方法及び装置、並びに、デバイス製造方法
JP4497949B2 (ja) * 2004-02-12 2010-07-07 キヤノン株式会社 露光装置
JP2006165398A (ja) * 2004-12-09 2006-06-22 Toshiba Corp 収差測定方法及び半導体装置の製造方法
JP2006173305A (ja) * 2004-12-15 2006-06-29 Canon Inc 露光装置及び方法、並びに、デバイス製造方法
JP2007157824A (ja) * 2005-12-01 2007-06-21 Nikon Corp 結像光学系の評価方法、結像光学系の調整方法、露光装置、露光方法、およびデバイスの製造方法
US7580113B2 (en) * 2006-06-23 2009-08-25 Asml Netherlands B.V. Method of reducing a wave front aberration, and computer program product
US8134683B2 (en) * 2007-02-09 2012-03-13 Asml Netherlands B.V. Device manufacturing method, computer program and lithographic apparatus

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