JP2009200410A - Vacuum processor - Google Patents

Abstract

The present invention provides a vacuum processing apparatus that has a structure that can more effectively suppress the progress of foreign matter bounced off from a turbo molecular pump, does not reduce the yield of a sample, and is easy to clean.
A processing chamber 20 disposed in a vacuum vessel 11 and generating plasma therein, and a sample stage 19 disposed in a lower portion of the processing chamber 20 on which a sample W to be processed is placed. A gas introduction mechanism 13 disposed above the processing chamber 20 and having an introduction hole for introducing a processing gas into the processing chamber, and a pressure for controlling the pressure in the processing chamber disposed in the lower portion of the processing chamber In the vacuum processing apparatus having a coaxial exhaust structure in which a control mechanism 24 and a turbo molecular pump 25 for evacuating the processing chamber are provided, and the turbo molecular pump 25 is installed below the sample stage 19, the processing chamber 20 Two or more plates 31 and 32 were alternately installed in the exhaust path formed between the inner wall surface and the outer peripheral side wall surface of the sample stage 19.
[Selection] Figure 1

Description

  The present invention has a vacuum vessel provided with a processing chamber for forming plasma inside a gas introduction mechanism and a gas exhaust mechanism, and a sample stage for installing a sample disposed in the lower part of the processing chamber, A vacuum processing apparatus in which a turbo molecular pump is installed in parallel with the sample stage at the bottom of the sample stage, and includes an exhaust structure in which the vacuum vessel, the sample stage, and the turbo molecular pump are arranged coaxially, In particular, the present invention relates to a vacuum processing apparatus having a mechanism for suppressing foreign matter that has collided and bounced off a rotor blade of a turbo molecular pump from adhering to a sample.

  In recent semiconductor device manufacturing processes, demands for measures for improving yields due to high integration of devices are becoming stricter year by year. Specifically, for example, there is a request for reducing a processing dimensional difference in the sample surface, and a request for an allowable value of the particle size and number of foreign matters. For example, as a reduction in the processing dimensional difference in the sample surface, it is conceivable to cope with an increase in the processing dimensional difference due to the deviation in the exhaust direction due to the evacuation device being provided unevenly. As a plasma processing apparatus (vacuum processing apparatus) of a semiconductor device corresponding to an increase in processing dimension difference due to such a deviation in the exhaust direction, a sample stage and an exhaust mechanism (turbo molecular pump) are installed in parallel in the vertical direction, The vacuum processing chamber, the sample stage, and the exhaust mechanism are arranged coaxially, and an exhaust path is formed between the vacuum processing chamber wall and the sample stage. It is known to be effective.

  The source of foreign matter in such a vacuum processing apparatus is, for example, in dry etching, a reaction product generated during the etching process and a gas with a high deposition effect used for controlling the wiring processing shape adhere to the inner wall of the processing chamber. The deposits are peeled off and become foreign substances due to the movement of the movable part in the processing chamber, the gas flux in the processing chamber, the action of plasma, the temperature change in the processing chamber, and the like. These foreign matter reduction measures include a structure that can be periodically replaced, and can be easily and periodically cleaned and replaced, or a structure in which reaction products or the like are difficult to adhere or accumulate, such as an increase in surface temperature, a part member Ingenuity such as selection of was carried out. However, even with these foreign matter reduction measures, it is difficult to completely eliminate the adhesion of reaction products and the like to the processing chamber. Particularly, it is difficult to clean, replaceable, movable, and processing chambers. Adhesion of reaction products or the like to the periphery of the exhaust mechanism installed in the lower part is present, causing foreign matter to be generated.

  Most of the foreign matter generated in the vacuum processing apparatus is exhausted together with the etching gas by the turbo molecular pump and the dry pump. However, in the vacuum processing apparatus having the coaxial structure as described above, it collides with the rotor blade in the turbo molecular pump. A part of the foreign matter is not exhausted and may flow backward to the upper part of the processing chamber by obtaining energy. This is because a large amount of energy is obtained from the turbo molecular pump, so that the reverse flow can be easily performed regardless of the exhaust flow. These foreign substances repeatedly collide with the inner wall of the processing chamber and flow back to the upper portion of the processing chamber, and a part of the foreign matter enters the sample, thereby affecting the wiring processing. As the device structure becomes more sophisticated, the allowable particle size of foreign objects becomes smaller and the allowable number becomes stricter.If foreign materials flowing back from the lower part of the processing chamber are not suppressed, the yield will decrease and production will be hindered. It has become. Further, such foreign matter has been a cause of sudden increase in foreign matter.

As a countermeasure against the backflow of foreign matter in such a vacuum processing apparatus using a turbo molecular pump, a technique has been proposed in which a reflector is installed in the exhaust path and the number of foreign matters on the sample is reduced by the shape of the reflector. (For example, refer to Patent Document 1). Further, an exhaust system using a turbo molecular pump in the exhaust path has been proposed (see, for example, Patent Document 2).
JP 2007-180467 A JP 2007-216710 A

  However, in the above prior art, regarding the reduction of the foreign matter, a complicated structure is installed to suppress the progress of the foreign matter, but the single structure is insufficient to suppress the foreign matter progression, and the structure is complicated. There was no consideration for ease of cleaning. The object of the present invention is to provide two or more plates that do not have a complicated structure in the exhaust path in a staggered manner, thereby more effectively suppressing the progress of foreign matter bounced off from the turbo molecular pump, and reducing the sample yield. An object of the present invention is to provide a vacuum processing apparatus having a structure that does not decrease and is easy to clean.

  In order to solve the above-described problems, the present invention provides a processing chamber in which a plasma is formed inside a vacuum vessel, and a sample in which a sample to be processed is placed on the upper surface of the processing chamber. A base, a gas introduction mechanism disposed above the processing chamber and having an introduction hole for introducing processing gas into the processing chamber, and a pressure for controlling the pressure in the processing chamber disposed at a lower portion of the processing chamber In a vacuum processing apparatus having a coaxial structure and having a control mechanism and a turbo molecular pump for holding the processing chamber at a high vacuum in a high vacuum, the turbo molecular pump is installed in parallel at the lower part of a sample stage. This is achieved by providing a structure in which two or more plates are arranged in parallel and staggered in the exhaust path formed between the sample table and the outer peripheral side wall surface of the sample stage.

  Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a longitudinal sectional view for explaining the configuration of a processing chamber of a plasma processing apparatus according to the present invention. FIG. 2 is a diagram for explaining the relationship between the overlapping range of the two reflecting plates and the number of foreign substances and the relationship between the overlapping range of the reflecting plates and the pressure difference in Experiment 1 using the plasma processing apparatus of the present invention. FIG. 3 is a diagram for explaining a method for measuring pressure on a sample in Experiment 1 using the plasma processing apparatus of the present invention. FIG. 4 is a view for explaining the position where the foreign material source is applied in Experiment 2 using the plasma processing apparatus of the present invention. FIG. 5 is a diagram for explaining the relationship between the number of foreign objects depending on the presence or absence of a reflector when the position of attaching a foreign material source in Experiment 2 using the plasma processing apparatus of the present invention is changed. FIG. 6 is a diagram for explaining the relationship between the distance between the two reflecting plates, the number of foreign objects, and the pressure difference when the overlapping range of the two reflecting plates according to Experiment 3 using the plasma processing apparatus of the present invention is 5 mm. It is. FIG. 7 is a diagram for explaining the relationship between the installation interval of the two reflectors, the number of foreign objects, and the pressure difference when the overlap between the two reflectors according to Experiment 3 using the plasma processing apparatus of the present invention is 40 mm. is there. FIG. 8 is a chart for explaining the relationship between the presence / absence of a reflector and the number of discharge foreign objects according to Experiment 4 using the plasma processing apparatus of the present invention. FIG. 9 is a plan view for explaining the apparatus configuration of the plasma processing apparatus in which the sample stage and the turbo molecular pump are coaxially arranged, and FIG. 10 is a longitudinal section showing the configuration of one processing apparatus of the plasma processing apparatus shown in FIG. FIG. FIG. 11 is a step diagram for explaining an example of a foreign matter measurement procedure, FIG. 12 is a chart showing an example of the result of separation of foreign matter generation, and FIG. 13 is an example of a procedure for measuring the number of foreign matters attached to a sample in a transport operation FIG.

  The overall configuration of the plasma processing apparatus as a premise of the present invention will be described with reference to FIG. The plasma processing apparatus 100 includes two blocks, an atmospheric block 101 and a vacuum block 102. The atmospheric block 101 includes an atmospheric transfer container 107 equipped with an atmospheric transfer robot and a cassette mounting table 108 for setting a plurality of cassettes in which samples such as semiconductor element substrates are stored. The vacuum block 102 has a vacuum transfer robot inside, a vacuum transfer container 105 into which argon gas, which is an indoor decompression and inert gas, is introduced, and a plurality of vacuum blocks that connect the vacuum transfer container 105 and the atmospheric block 101. There are provided a lock chamber 106, a plurality of vacuum containers 103 for carrying a sample into the decompressed interior and performing an etching process, and a plurality of vacuum containers 104 for carrying a sample into the decompressed interior and performing an ashing process. ing. A gate valve is installed between the vacuum container 103 and the vacuum transfer container 105 so that the containers can be shut off.

  The configuration of the processing chamber 10 of the vacuum vessel 103 constituting the plasma processing apparatus 100 shown in FIG. 9 will be described with reference to FIG. The processing chamber 10 includes a processing chamber 20 including a processing container 11 and a lid member 12 that forms an upper portion of the processing container 11. An antenna member is installed on the top of the lid member 12, and this antenna member is a lid member 16 made of a conductive member such as SUS, a flat plate-shaped antenna 14 installed on the inside thereof, an antenna 14, It is composed of at least one dielectric 15 having a ring shape that is disposed between the lid member 16 and insulates between them, and is disposed for propagating radio waves emitted from the antenna 14 into the processing chamber 20. Has been. The antenna 14 is connected to a radio wave source 18 that forms UHF band radio waves by a coaxial cable or the like, and the transmitted radio waves are introduced into the processing chamber 20 via the antenna 14. A solenoid coil 17 is disposed around the upper portion of the processing chamber 10, and a magnetic field generated thereby is supplied to the processing chamber 20. A shower plate 13 having a plurality of holes through which process gas passes is installed under the lid member 12, and the process gas whose flow rate is adjusted by the mass flow controller 21 is a gap between the lid member 12 and the shower plate 13. Is supplied to the processing chamber 20 through a plurality of holes formed in the shower plate 13. In the space of the processing chamber 20 above the sample stage 19, process gas supplied from a plurality of holes in the shower plate 13, radio waves introduced through the lid member 12, and a magnetic field generated from the solenoid coil 17 Plasma is generated by the interaction. The sample W placed on the sample stage 19 undergoes anisotropic etching by the generated plasma and the high-frequency power source 26 placed below the sample stage 19.

  Further, the processing chamber 20 is configured to be able to maintain a high vacuum by a turbo molecular pump 25 and a dry pump 28 installed at the lower portion of the processing chamber. The pressure in the processing chamber 20 is monitored by a pressure gauge 23 provided at the lower portion of the processing container 11, and the detected pressure is transmitted to a control device 27 that controls the high-frequency power source 26, the radio wave source 18, and the like. The pressure can be adjusted by operating the variable valve 24. A gate valve 22 is installed in the processing container 11.

  In the semiconductor device manufacturing process, the measurement of the number of defects or the foreign matter is performed periodically or at any time as a technique for managing the foreign matter on the sample (semiconductor wafer). An example of the foreign matter measurement procedure in the plasma processing apparatus in the semiconductor device manufacturing process actually performed will be described with reference to FIG. As shown in FIG. 11, the number of foreign matters attached to the sample in advance is measured (S1). Here, the particle size of the foreign matter is set to 0.13 μm or more. The measured sample is placed in the cassette (S2), transferred to the load lock chamber and vacuum transfer container 105 shown in FIG. 9, and transferred to the sample stage in the processing chamber (S3). Gas supply is started (S4), the pressure in the processing chamber by the variable valve 24 is adjusted (S5), the source power is advanced in the order of introduction into the processing chamber (S6), and the processing is started (S7). After the processing is completed (S8), the source power is turned off (S9), the variable valve 24 is fully opened (S10), and the gas supply is stopped (S11). Are stored in the cassette via the vacuum transfer container 105 and the load lock chamber 106 shown in FIG. The collected sample is checked for the number of foreign matters attached to the sample with a measuring instrument, and the number of foreign matters first measured is subtracted to calculate the increased number of foreign matters (S13).

  An example of the measurement result of the foreign matter shown in FIG. 11 will be described with reference to FIG. In the plasma processing apparatus in which 220 foreign matters having a particle size of 0.13 μm or more are generated in the discharge foreign matter (a), when the cause of occurrence of 220 foreign matters is investigated, the transport foreign matter (b), which is a transport operation only, and the gas supply operation From the results of the foreign matter (c) due to the gas supply including up to and the foreign matter (d) due to the variable valve operation including up to the variable valve operation, it can be seen that the foreign matter in this apparatus is generated by the operation of the variable valve. Moreover, from the result of the foreign matter (e) by the variable valve operation in which the variable valve operation was performed without supplying gas, the foreign matter was generated by the variable valve operation regardless of the presence or absence of gas flow. I understand. From this result, even if the variable valve 24 positioned below the sample stage 19 shown in FIG. 10 is a foreign substance site, the generated foreign substance flows back to the sample stage 19 and is applied to the sample W placed on the sample stage 19. It can be seen that about one foreign object is adhered.

  An example of a procedure for measuring the number of foreign matters adhering to the sample W in the transport operation will be described with reference to FIG. The sample W uses a 12-inch size, and first measures the number of foreign particles having a particle size of 0.13 μm or more adhering to the sample W in advance (S21). The reason why the foreign object particle size is 0.13 μm or more is that the dry process mass production process of the semiconductor element substrate is controlled at 0.13 μm. The sample W for which the number of foreign matters has been measured is set on the cassette mounting table 104 in the atmospheric block 102 and conveyed to the load lock chamber (S22). The sample is transferred to the vacuum transfer container 105 by the vacuum transfer robot installed in the vacuum transfer container 105 (S23), and the sample W is transferred to the sample stage 19 of the vacuum container 103 (S24). The variable valve 24 is left fully open for several seconds in the processing chamber, and then again transports the sample W through the vacuum transfer container 105 (S25) to the unload lock chamber (S26). The sample W is collected in the cassette installed on the cassette installation table (S27), and the number of foreign particles having a particle size of 0.13 μm or more attached to the collected sample W is confirmed (S28). The number of foreign objects is calculated by subtracting the initial number of foreign substances confirmed in step S21 from the number of foreign substances confirmed in step S28.

  With reference to FIG. 1, the structure of a vacuum processing chamber according to the present invention in which a sample stage and a turbo molecular pump are arranged in parallel and coaxially below the sample stage will be described. The vacuum processing chamber has a vacuum vessel and a sample stage on which a sample placed in the lower part of the processing chamber is installed, and a turbo molecular pump is installed in the lower part of the sample stage in parallel with the sample stage. In FIG. 1, the same parts as those in the vacuum processing chamber shown in FIG. In the present invention, an exhaust path is provided between the inner side wall of the processing chamber 11 and the outer peripheral side wall of the sample table 19. According to the present invention, the reflecting plates 31 and 32 are provided in parallel to the exhaust path along the upper and lower sides of the column 33 supporting the sample stage 19 with a distance D, and the two reflecting plates 31 and 32 overlap with each other. They are installed together.

  Furthermore, in this embodiment, in order to verify the effectiveness of the present invention, a foreign material source 41 that has been confirmed in advance that a foreign material of 0.13 μm or more is generated in a vacuum exhaust operation or the like is provided on the lower surface of the processing chamber 20. installed.

[Experiment 1] The number of foreign matters when the overlapping range L of the two reflecting plates shown in FIG. 1 is changed is shown using FIG. The number of foreign particles having a particle size of 0.13 μm or more is reduced by changing the state of no reflecting plate to one reflecting plate (32) and two reflecting plates (31, 32). In addition, it was found that increasing the overlapping range L of the two reflectors further reduced foreign matter, and that when the overlapping range L was 5 mm or more, foreign matter having a particle size of 0.13 μm or more could be reduced by 70% or more.

  FIG. 3 shows a method for confirming the pressure 39 near the sample when the reflector is attached. The pressure in the processing chamber 20 is measured by a pressure gauge 23 shown in FIG. 3, and the difference between the pressure of the pressure gauge 23 and the pressure 39 in the vicinity of the sample is only 0.1 Pa in the absence of a reflector. However, since the pressure 39 near the sample is changed by installing the reflecting plates 31 and 32, the pressure 39 near the sample is measured by the pressure gauge 29 shown in FIG.

  The measurement result of the pressure difference measured by the pressure gauge 23 and the pressure gauge 29 by the method shown in FIG. 3 will be described with reference to FIG. By increasing the overlapping range L of the two reflectors, the difference between the pressure gauge 23 and the pressure gauge 29 increases slightly, and increases rapidly when the overlapping range exceeds 40 mm. It is known that if the difference between the pressure gauge 23 and the pressure gauge 29 is 0.5 Pa or less, the influence on the etching performance is small, and the overlapping range L of the two reflectors is between 5 mm and 40 mm. It was found that the effect of suppressing the backflow of foreign matters can be obtained while maintaining the performance.

[Experiment 2] In Experiment 1, the foreign material source 41 was arranged in the lower part of the processing chamber 20, but in Experiment 2, the foreign material was confirmed by changing the installation position of the foreign material source. FIG. 4 shows the places where the foreign matter sources 42, 43, and 44 are installed. These foreign matter sources 42, 43, and 44 were installed separately to confirm the number of foreign matters. The installation location of the foreign material source 42 is the surface of the shower plate 13 having gas ejection holes. It is generally known at the production site that foreign matters are generated when the shower plate 13 becomes dirty. Further, it is generally known that the foreign matter source 43 is in the vicinity of the gate valve 22, and when the gate valve becomes dirty, foreign matter is generated by its movement. Further, the foreign material source 44 is the reflection plate itself, and confirmation was made when this reflection plate itself was used as a foreign material generation source.

  FIG. 5 shows the measurement results when the position of the foreign material source is changed when the overlapping range L of the two reflective plates is 40 mm and the installation interval D of the reflective plates 31 and 32 is 80 mm. The number of foreign substances adhering to the sample by installing the two reflecting plates 31 and 32 in the processing chamber 20 is less than the structure in which the reflecting plate is not installed. That is, it was found that the foreign matter generated in the upper part of the discharge was not attached to the sample by the reflector and the effect of suppressing the backflow of the foreign matter was obtained.

[Experiment 3] In Experiment 1, the installation interval D between the two reflectors was 80 mm, but in Experiment 3, the installation interval D between the two reflectors was changed to confirm the number of foreign substances attached. It is. FIG. 6 shows the result of measuring the number of foreign objects and the difference between the pressure gauge 23 and the pressure gauge 29 indicating the pressure in the vicinity of the sample when the installation distance D of the two reflection boards is changed with an overlapping range of 5 mm between the two reflection boards. Show. FIG. 7 shows the result of measuring the number of foreign objects and the pressure 29 indicating the pressure near the pressure gauge 23 and the sample when the overlapping range of the two reflectors is 40 mm and the installation distance D between the two reflectors is changed. Shows the difference.

  In both cases where the overlapping range L of the two reflectors is 5 mm and 40 mm, the pressure gauge 23 indicates the pressure near the sample and the pressure gauge 23 when the installation interval D of the two reflectors is in the range of 20 mm to 120 mm. The difference of 29 was small, and the backflow suppression effect of the foreign matter was found.

[Experiment 4] Experiment 4 shows a measurement example of discharge foreign matter. The method for measuring foreign matter was performed in the order shown in FIG. FIG. 8 shows the measurement result of the discharge foreign matter when the installation interval D of the two reflectors is 80 mm, and the overlapping range L of the two reflectors is 40 mm. Although the number of foreign matters changed each time a plurality of measurements were performed, it was found that the number of foreign matters was reduced from 55% to 65% by installing two reflectors.

  In the above experiment, the example using the reflectors 31 and 32 having the flat surface shape has been described. However, the same effect can be obtained in the reflector shape in which the tip of the reflector is bent to the turbo molecular pump 25 side. I think that it is obtained.

  In Experiment 4, a description has been given of a configuration in which the reflection plate 31 as shown in FIG. 1 is installed on the processing container 11 side and the reflection plate 32 is installed on the sample table 19 side. The same effect can be obtained in the installation structure on the processing container side.

  In the experiment 4, the structure in which the reflectors 31 and 32 as shown in FIG. 1 are installed along the upper and lower sides of the column 33 has been described. However, the reflectors 31 and 32 are installed between the sample W to be processed and the turbo molecular pump 25. It is considered that the same effect can be obtained by installing it within the above range as long as it is in a possible exhaust route.

  The exhaust path is formed between the inner wall surface of the processing container 11 and the outer peripheral side wall surface of the sample table 19. Therefore, the area formed by the interval between the reflecting plate 31 and the sample table 19 and the area formed by the interval between the reflecting plate 32 and the inner wall surface of the processing container 11 prevent the increase in the conductance of the exhaust path from the processing chamber. From the viewpoint of preventing an increase in the pressure difference between the upper part and the turbo molecular pump, it is desirable that they be equal.

  In these experiments, an example of a plasma processing apparatus has been described. However, as a processing apparatus to which the present invention is applied, a plasma having a coaxial exhaust structure in which a turbo molecular pump 25 is installed in parallel below a sample stage 19. The present invention can be widely applied to processing apparatuses.

  As described above, the two reflecting plates 31 and 32 having a complicated structure are alternately arranged in a coaxial structure in which the turbo molecular pump 25 and the sample stage 19 are installed in parallel. The overlap range L is 5 mm to 40 mm, and the installation interval D of the two reflectors 31 and 32 is set to a range of 20 mm to 120 mm, thereby effectively suppressing the progress of foreign matter bounced off from the turbo molecular pump, and the sample yield. It is possible to provide a vacuum processing apparatus having a structure that does not decrease and is easy to clean.

  According to the present embodiment, the foreign matter bounced off from the turbo molecular pump becomes difficult to reach the sample, so that the yield of the sample to be processed can be improved.

The longitudinal cross-sectional view explaining the structure of the process chamber of the plasma processing apparatus concerning this invention. The figure explaining the relationship between the overlapping range of two reflecting plates and the number of foreign substances in Experiment 1 using the plasma processing apparatus of the present invention, and the relationship between the overlapping range of reflecting plates and the pressure difference. The figure explaining the pressure measuring method on the sample in Experiment 1 using the plasma processing apparatus of this invention. The figure explaining the sticking position of the foreign material source concerning the experiment 2 using the plasma processing apparatus of this invention. The figure explaining the relationship of the foreign material number by the presence or absence of a reflecting plate at the time of changing the sticking position of the foreign material source in Experiment 2 using the plasma processing apparatus of this invention. The figure explaining the relationship between the installation space | interval of two reflection plates, the number of foreign materials, and a pressure difference when the overlapping range of the two reflection plates concerning Experiment 3 using the plasma processing apparatus of this invention is 5 mm. The figure explaining the relationship between the installation space | interval of two reflection plates, the number of foreign materials, and a pressure difference when the overlap of the two reflection plates concerning Experiment 3 using the plasma processing apparatus of this invention is 40 mm. It is a table | surface explaining the relationship between the presence or absence of a reflecting plate concerning Experiment 4 using the plasma processing apparatus of this invention, and the number of discharge foreign materials. The top view explaining the apparatus structure of the plasma processing apparatus which has arrange | positioned the sample stand and the turbo-molecular pump coaxially. The longitudinal cross-sectional view which shows the structure of one processing apparatus of the plasma processing apparatus shown in FIG. The step figure explaining the example of a foreign material measurement procedure. The chart which shows the example of the isolation | separation result of foreign material generation | occurrence | production. FIG. 6 is a step diagram for explaining an example of a procedure for measuring the number of foreign matters attached to a sample in a transport operation.

Explanation of symbols

10: processing chamber, 11: processing container, 12: lid member, 13: shower plate, 14: antenna, 15: dielectric, 17: solenoid coil, 18: radio wave source, 19: sample stage, 20: processing chamber, 21 : Mass flow controller, 22: Gate valve, 23: Pressure gauge, 24: Variable valve, 25: Turbo molecular pump, 26: High frequency power supply, 27: Control device, 28: Dry pump, 29: Pressure gauge, 31, 32: Reflection Plate, 33: support, 39: pressure near sample, 41, 42, 43, 44: foreign material source, 100: plasma processing apparatus, 101: atmospheric block, 102: vacuum block, 103, 104: vacuum vessel, 105: vacuum Transport container, 106: Lock chamber, 107: Atmospheric transport container, 108: Cassette mounting base, L: Range where two reflectors overlap, D: Between two reflectors installed , W: sample.

Claims (4)

A processing chamber that is disposed in a vacuum vessel and generates plasma therein, a sample table that is disposed in the lower part of the processing chamber and on which a sample to be processed is placed, and is disposed above the processing chamber. A gas introduction mechanism having an introduction hole for introducing a processing gas into the processing chamber, a pressure control mechanism for controlling the pressure in the processing chamber disposed in the lower portion of the processing chamber, and a turbo for exhausting the processing chamber In a vacuum processing apparatus having a coaxial pumping structure having a molecular pump and having the turbo molecular pump installed at the bottom of a sample stage,
2. A vacuum processing apparatus, wherein two or more plates are alternately installed in an exhaust path formed between the processing chamber wall surface and the outer peripheral side wall surface of the sample stage. The vacuum processing apparatus according to claim 1, wherein
The vacuum processing apparatus, wherein the two or more plates are arranged in parallel and alternately, and the overlapping range of the plates is 5 mm to 40 mm. The vacuum processing apparatus according to claim 1, wherein
The vacuum processing apparatus, wherein the two or more plates are installed in parallel and alternately, and an installation interval between the plates is 20 mm to 120 mm. The vacuum processing apparatus according to claim 1, wherein
2. The vacuum processing apparatus according to claim 1, wherein the two or more plates are installed in parallel and in a staggered manner, and tip portions of the plates are inclined toward the turbo molecular pump side.

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