JP2010061159A - 投影光学系、露光装置、および露光方法 - Google Patents
投影光学系、露光装置、および露光方法 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0892—Catadioptric systems specially adapted for the UV
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/33—Immersion oils, or microscope systems or objectives for use with immersion fluids
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G02—OPTICS
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Abstract
【解決手段】 第1面(OP)の像を1.1よりも大きい屈折率を有する媒質(IL)を介して第2面(IP)上に投影するための投影光学系は、最も第2面側に配置された境界レンズ(E233)を含む複数のレンズを有する光路を有し、境界レンズの第1面側の面は正の屈折力を有する。ただし、光路中の雰囲気の屈折率を1とする。
【選択図】 図2
Description
0.012<Cb・D/NA<0.475 (1)
|P・D|<1.0×10-4 (2)
b. 結果として生ずる球面収差やコマ収差は、当該系内の幾つかの非球面を含む他の要素の中で容易に補正でき、このことは、マイクロリソグラフィーで使用される広視野内で急激に変化する軸外球面収差、コマ収差、非点収差、ディストーション等の高次の収差を補正する上で有利なことである。この手法は、V型反射屈折系設計等の2つの中間像を有する長く複雑な系において特に有効である。
c. コンセントリック条件を厳密に満たした面の場合に発生するようなウエハ上の焦点ゴースト像は全く発生しない。
+C4・y4+C6・y6+C8・y8+C10・y10+C12・y12
+C14・y14+C16・y16+C18・y18+C20・y20 (4)
λ=193.306nm
β=−1/4
NA=1.0
D=B=15mm
A=3mm
LX=26mm
LY=4.4mm
Cb=0.01095mm-1
P=0mm-1
Cb・D/NA=0.164
|P・D|=0
β=−1/4
NA=1.0
D=B=15mm
A=3mm
LX=26mm
LY=4.4mm
Cb=0.01087mm-1
P=0mm-1
Cb・D/NA=0.163
|P・D|=0
β=−1/4
NA=0.9
D=B=12mm
LX=22mm
LY=9mm
Cb=0.002mm-1
P=0mm-1
Cb・D/NA=0.0267
|P・D|=0
0.75<MA/MG3<1.1 (5)
好ましくは、0.8<MA/MG3<1.05
但し、MAは光学系全体の倍率であり、MG3は第3結像レンズ系G3の倍率である。
倍率 MA
MG3 MA/MG3
第1実施例 1/4
1/3.55 0.888
第2実施例(ArF) 1/4
1/3.53 0.883
第3実施例(F2) 1/4
1/3.78 0.945
第5実施例 1/4
1/3.42 0.855
NA(像側):1.25
倍率MA:1/4
露光領域:A=3.5mm、B=15.1mmであるから矩形領域26mm×4mm
中心波長:193.306nm
石英ガラスの屈折率:1.5603261
純水の屈折率:1.4368163
石英ガラスの分散(dn/dλ):−1.591E−6/pm
純水の分散(dn/dλ):−2.096E−6/pm
IP 第2面
E233 境界レンズ
IL 液浸液の層
L 境界レンズへの入射前の外縁光線収束角
S 境界レンズ内の外縁光線収束角
S263 境界レンズの第1面側の光学面
Claims (22)
- 第1面の像を1.1よりも大きい屈折率を有する媒質を介して第2面上に投影するための投影光学系であって、
前記投影光学系は最も第2面側に配置された境界レンズを含む複数のレンズを有する光路を有し、
前記境界レンズの前記第1面側の面は正の屈折力を有する投影光学系。
ただし、前記光路中の雰囲気の屈折率を1とする。 - 請求項1に記載の投影光学系であって、
前記境界レンズの第1面側の曲率をCbとし、光軸と有効結像領域の最外点との距離をDとし、前記境界レンズの前記第2面側の開口数をNAとするとき、
0.012<Cb・D/NA<0.475
の条件を満足する投影光学系。 - 請求項1又は2に記載の投影光学系であって、
前記境界レンズと前記第2面との間の光路中に少なくとも1つのほぼ無屈折力の光学部材が配置され、かつ、前記境界レンズと前記光学部材との間の光路及び前記光学部材と前記第2面との間の光路は前記媒質で満たされている投影光学系。 - 請求項3に記載の投影光学系であって、
前記ほぼ無屈折力の少なくとも1つ光学部材は前記境界レンズと前記第2面との間の光路中に挿脱自在に配置されている投影光学系。 - 請求項3又は4に記載の投影光学系であって、
前記ほぼ無屈折力の光学部材の姿勢は調整可能である投影光学系。 - 請求項3乃至5のいずれか1項に記載の投影光学系であって、
前記ほぼ無屈折力の光学部材の屈折力をPとし、前記光軸と前記有効結像領域の最外点との距離をDとするとき、
|P・D|<1.0×10-4
の条件を満足する投影光学系。 - 請求項1乃至6のいずれか1項に記載の投影光学系であって、
少なくとも1つの凹面反射鏡を有する反射屈折光学系である投影光学系。 - 請求項7に記載の投影光学系であって、
前記光軸に対して偏心した有効結像領域を有し、前記投影光学系の前記光路中に少なくとも1つの中間像が形成される投影光学系。 - 請求項8に記載の投影光学系であって、
前記少なくとも1つの凹面反射鏡を有し前記中間像を形成するための1つの結像光学系と、前記中間像からの光束に基づいて最終像を前記第2面上に形成するための他の結像光学系と、
前記1つの結像光学系と前記他の結像光学系との間の光路中に配置された偏向鏡とを有する投影光学系。 - 請求項9に記載の投影光学系であって、
前記光学系全体の倍率をMAとし、前記他の結像光学系の倍率をMG3とするとき、次の条件式
0.75<MA/MG3<1.1
を満足する投影光学系。 - 請求項8に記載の投影光学系であって、
前記第1面の第1中間像を形成するための第1結像光学系と、前記少なくとも1つの凹面反射鏡を有し前記第1中間像からの光束に基づいて第2中間像を形成するための第2結像光学系と、前記第2中間像からの光束に基づいて最終像を前記第2面上に形成するための第3結像光学系とを有し、
前記第1結像光学系と前記第2結像光学系との間の光路中に第1偏向鏡が配置され、前記第2結像光学系と前記第3結像光学系との間の光路中に第2偏向鏡が配置されている投影光学系。 - 請求項11に記載の投影光学系であって、
前記第1結像光学系の光軸と前記第3結像光学系の光軸とが一致している投影光学系。 - 請求項11又は12に記載の投影光学系であって、
前記光学系全体の倍率をMAとし、前記第3結像光学系の倍率をMG3とするとき、次の条件式
0.75<MA/MG3<1.1
を満足する投影光学系。 - 請求項9に記載の投影光学系であって、
前記他の結像光学系は開口絞りを含んでおり、かつ、前記開口絞りの前記第2面側に配置されたレンズ要素の数は5以下である投影光学系。 - 請求項14に記載の投影光学系であって、
前記第2面と前記第3結像光学系中の前記開口絞りとの間に配置された総てのレンズ要素は正の屈折力を有している投影光学系。 - 請求項14に記載の投影光学系であって、
前記開口絞りの前記第2面側に配置されたレンズ要素に負の屈折力を有するレンズ要素は含まれていない投影光学系。 - 請求項1乃至16のいずれか1項に記載の投影光学系であって、
前記第1面側の開口数が0.22以上である投影光学系。 - 請求項8に記載の投影光学系であって、
前記第1面の第1中間像を形成するための第1結像光学系と、前記少なくとも1つの凹面反射鏡を有し前記第1中間像からの光束に基づいて第2中間像を形成するための第2結像光学系と、前記第2中間像からの光束に基づいて最終像を前記第2面上に形成するための第3結像光学系とを有する投影光学系。 - 請求項18に記載の投影光学系であって、
前記第1結像光学系の光軸と前記第3結像光学系の光軸とが一致している投影光学系。 - 請求項18に記載の投影光学系であって、
前記第1および第3結像光学系は非球面を有している投影光学系。 - 第1面に設定されたマスクを照明するための照明系と、前記マスクに形成されたパターンの像を前記第2面に設定された感光性基板上に形成するための請求項1乃至20のいずれか1項に記載の投影光学系とを有する露光装置。
- 第1面に設定されたマスクを照明するステップと、請求項1乃至20のいずれか1項に記載の投影光学系を介して前記マスクに形成されたパターンの像を第2面に設定された感光性基板上に投影露光するステップとを含み、
前記投影露光するステップでは、前記媒質を介して前記パターンの像を前記感光性基板上に投影露光する露光方法。
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| SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7372541B2 (en) | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20080049306A1 (en) | 2008-02-28 |
| JP2005536775A (ja) | 2005-12-02 |
| CN1668984A (zh) | 2005-09-14 |
| US7688517B2 (en) | 2010-03-30 |
| US20080094696A1 (en) | 2008-04-24 |
| US7609455B2 (en) | 2009-10-27 |
| WO2004019128A2 (en) | 2004-03-04 |
| AU2003256081A8 (en) | 2004-03-11 |
| US20080049336A1 (en) | 2008-02-28 |
| TW200403547A (en) | 2004-03-01 |
| TWI242691B (en) | 2005-11-01 |
| US7362508B2 (en) | 2008-04-22 |
| JP4803301B2 (ja) | 2011-10-26 |
| US7551362B2 (en) | 2009-06-23 |
| KR20050035890A (ko) | 2005-04-19 |
| TW200426542A (en) | 2004-12-01 |
| US7619827B2 (en) | 2009-11-17 |
| US20080068576A1 (en) | 2008-03-20 |
| TWI249082B (en) | 2006-02-11 |
| US7580197B2 (en) | 2009-08-25 |
| AU2003256081A1 (en) | 2004-03-11 |
| WO2004019128A3 (en) | 2004-10-28 |
| US20080068573A1 (en) | 2008-03-20 |
| CN100462844C (zh) | 2009-02-18 |
| US7701640B2 (en) | 2010-04-20 |
| EP1532489A2 (en) | 2005-05-25 |
| US20050248856A1 (en) | 2005-11-10 |
| JP2010097221A (ja) | 2010-04-30 |
| US20080068724A1 (en) | 2008-03-20 |
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