JP2010077234A - Liquid epoxy resin composition and semiconductor device - Google Patents

Liquid epoxy resin composition and semiconductor device Download PDF

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JP2010077234A
JP2010077234A JP2008245609A JP2008245609A JP2010077234A JP 2010077234 A JP2010077234 A JP 2010077234A JP 2008245609 A JP2008245609 A JP 2008245609A JP 2008245609 A JP2008245609 A JP 2008245609A JP 2010077234 A JP2010077234 A JP 2010077234A
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epoxy resin
liquid epoxy
group
resin composition
semiconductor device
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Kaoru Kato
馨 加藤
Kazumasa Sumida
和昌 隅田
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Shin Etsu Chemical Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

【課題】 本発明は、従来に比べて低温、短時間に硬化が可能であり、シリコンチップの表面、特に感光性ポリイミド樹脂や窒化膜との密着性に優れ、かつ強靭性に優れた硬化物を与える液状エポキシ樹脂組成物、及びこの組成物の硬化物で封止された半導体装置を提供する。
【解決手段】 (A)液状エポキシ樹脂、(B)芳香族アミン系硬化剤、(C)硬化促進剤として下記一般式(1)及び又は(2)
R1-[COO-CH(CH3)-O-R2]n (1)(式中、nは正の数であり、Rはn価の有機基であり、Rは1価の有機基である。RとRは、互いに同じでも異なっても良い。)
H-[OCO-R3-COO-CH(CH3)-OR4-O-CH(CH3)]m-H (2)(式中、mは正の数であり、R及びRは2価の有機基であり、互いに同じでも異なっても良い。)により表される化合物を必須成分とすることを特徴とする液状エポキシ樹脂組成物。
【選択図】 なし
PROBLEM TO BE SOLVED: To provide a cured product that can be cured at a low temperature and in a short time compared with conventional ones, has excellent adhesion to the surface of a silicon chip, particularly a photosensitive polyimide resin or a nitride film, and has excellent toughness. A liquid epoxy resin composition for providing a semiconductor device and a semiconductor device sealed with a cured product of the composition are provided.
SOLUTION: (A) Liquid epoxy resin, (B) Aromatic amine curing agent, (C) The following general formula (1) and / or (2) as a curing accelerator
R 1- [COO—CH (CH 3 ) —OR 2 ] n (1) (wherein n is a positive number, R 1 is an n-valent organic group, and R 2 is a monovalent organic group) R 1 and R 2 may be the same or different from each other.)
H— [OCO—R 3 —COO—CH (CH 3 ) —OR 4 —O—CH (CH 3 )] m —H (2) (wherein m is a positive number and R 3 and R 4 Are divalent organic groups, which may be the same or different from each other.) A liquid epoxy resin composition characterized by comprising as an essential component a compound represented by:
[Selection figure] None

Description

本発明は、半導体封止用として好適で、シリコンチップの素子表面(特に感光性ポリイミド、窒化膜、酸化膜)との密着性が非常に良好であり、耐湿性の高い硬化物を与え、特にリフロー温度260℃以上の高温熱衝撃に対して優れた封止材となり得る液状エポキシ樹脂組成物、及びこの組成物にて封止された半導体装置に関する。   The present invention is suitable for semiconductor sealing, has very good adhesion to the element surface (especially photosensitive polyimide, nitride film, oxide film) of the silicon chip, and gives a cured product with high moisture resistance. The present invention relates to a liquid epoxy resin composition that can be an excellent sealing material against a high temperature thermal shock at a reflow temperature of 260 ° C. or higher, and a semiconductor device sealed with this composition.

電気機器の小型化、軽量化、高機能化に伴い、半導体の実装方法もピン挿入タイプから表面実装が主流になっている。また、半導体素子の高機能化に伴い、ダイサイズの一辺が10mmを超えるものもあり、ダイサイズの大型化が進んできている。このような大型ダイを用いた半導体装置では、半田リフロー時にダイと封止材にかかる応力が増大し、封止材とダイ及び基板の界面での剥離、基板実装時にパッケージにクラックが入るといった問題がクローズアップされてきている。   Along with the downsizing, weight reduction, and higher functionality of electrical equipment, semiconductor mounting methods have become mainstream from pin insertion type to surface mounting. In addition, with the increase in functionality of semiconductor elements, there are cases where one side of the die size exceeds 10 mm, and the die size has been increased. In a semiconductor device using such a large die, the stress applied to the die and the sealing material increases during solder reflow, peeling at the interface between the sealing material and the die and the substrate, and cracks in the package when mounted on the substrate Has been close up.

更に、近い将来に鉛含有半田が使用できなくなることから、鉛代替半田が多数開発されている。この種の半田は、溶融温度が鉛含有の半田より高くなることから、リフローの温度も260〜270℃で検討されており、従来の液状エポキシ樹脂組成物の封止材では、より一層の不良が予想される。このようにリフローの温度が高くなると、従来においては何ら問題のなかったフリップチップ型のパッケージもリフロー時にクラックが発生したり、チップ界面、基板界面との剥離が発生したりするという重大な問題が起こるようになった。   Furthermore, since lead-containing solder cannot be used in the near future, a number of lead substitute solders have been developed. Since this type of solder has a melting temperature higher than that of lead-containing solder, the reflow temperature is also examined at 260 to 270 ° C., and the conventional liquid epoxy resin composition sealing material is even more defective. Is expected. Thus, when the reflow temperature becomes high, the flip chip type package, which has not had any problems in the past, has a serious problem that cracks occur at the time of reflow and peeling from the chip interface and the substrate interface occurs. It came to happen.

これらの要求を満たす材料として、液状エポキシ樹脂/アルキル置換芳香族ジアミン系の液状封止樹脂が提案されている(特開平9−176287号公報:特許文献1、特開平9−176294号公報:特許文献2)。この材料は、基板、金属、ソルダーレジスト等との接着性に優れ、更に耐リフロー性、耐温度サイクルクラック性に優れ、高信頼性パッケージを可能としている。   As a material satisfying these requirements, a liquid epoxy resin / alkyl-substituted aromatic diamine-based liquid sealing resin has been proposed (JP-A-9-176287: Patent Document 1, JP-A-9-176294: Patent). Reference 2). This material is excellent in adhesion to a substrate, metal, solder resist, etc., and further excellent in reflow resistance and temperature cycle crack resistance, enabling a highly reliable package.

しかし、上記の樹脂系は硬化時間が長く(150℃/3時間)、パッケージ生産性という観点からは問題であった。また、ゲル化時間が長い為にフィラーの沈降、それに伴う表面クラックの発生、可使時間が短い等の欠点があった。また、硬化温度の低温化および硬化時間を短くする為に硬化促進剤の検討が考えられ、その例としてはフェノール類、サリチル酸のようなフェノール酸が挙げられるが、可使時間が短く、作業性が著しく低下する等の欠点があった。   However, the above resin system has a long curing time (150 ° C./3 hours), which is a problem from the viewpoint of package productivity. In addition, since the gelation time is long, there are disadvantages such as sedimentation of the filler, generation of surface cracks associated therewith, and short pot life. In addition, in order to reduce the curing temperature and shorten the curing time, it is conceivable to examine a curing accelerator, and examples thereof include phenols and phenolic acids such as salicylic acid. There were drawbacks such as significantly lowering the.

特開平9−176287号公報JP-A-9-176287 特開平9−176294号公報JP-A-9-176294

本発明は、上記事情に鑑みなされたもので、従来に比べて低温、短時間に硬化が可能であり、シリコンチップの表面、特に感光性ポリイミド樹脂や窒化膜との密着性に優れ、かつ強靭性に優れた硬化物を与え、リフローの温度が従来温度240℃付近から260〜270℃に上昇しても不良が発生せず、更にPCT(120℃/2.1atm)などの高温多湿の条件下でも劣化せず、−65℃/150℃の温度サイクルにおいて数百サイクルを超えても剥離、クラックが発生しない半導体装置の封止材となり得る液状エポキシ樹脂組成物、及びこの組成物の硬化物で封止された半導体装置を提供することを目的とする。   The present invention has been made in view of the above circumstances, and can be cured at a low temperature and in a short time as compared with the prior art, has excellent adhesion to the surface of a silicon chip, particularly a photosensitive polyimide resin or a nitride film, and is tough. High quality and high humidity conditions such as PCT (120 ° C / 2.1 atm) are obtained even when the reflow temperature is increased from about 240 ° C to about 260-270 ° C. Liquid epoxy resin composition that can be used as a sealing material of a semiconductor device that does not deteriorate even under a temperature of −65 ° C./150° C. An object of the present invention is to provide a semiconductor device encapsulated in the process.

本発明者は、上記目的を達成するために鋭意検討を重ねた結果、(A)液状エポキシ樹脂、(B)芳香族アミン系硬化剤、及び(C)一般式(1)及び(2)であらわせられる硬化促進剤を必須成分とし、好ましくは(D)無機質充填剤を含有する液状エポキシ樹脂組成物を用いること、この場合特に、(A)液状エポキシ樹脂のエポキシ当量と(B)芳香族アミン系硬化剤のアミン当量との当量比〔(A)/(B)〕を0.7以上1.2以下とすることにより、シリコンチップの表面、特に感光性ポリイミド樹脂や窒化膜との密着性に優れ、PCT(120℃/2.1atm)などの高温多湿の条件下でも劣化せず、熱衝撃に対して優れており、特に大型ダイサイズの半導体装置の封止材として有効となり得ることを見出し、本発明をなすに至ったものである。   As a result of intensive studies to achieve the above object, the present inventor has (A) liquid epoxy resin, (B) aromatic amine-based curing agent, and (C) general formulas (1) and (2). It is preferable to use a liquid epoxy resin composition containing (D) an inorganic filler, and in this case, in particular, (A) the epoxy equivalent of the liquid epoxy resin and (B) an aromatic amine. By setting the equivalent ratio [(A) / (B)] with the amine equivalent of the system curing agent to 0.7 or more and 1.2 or less, adhesion to the surface of the silicon chip, particularly to the photosensitive polyimide resin or nitride film It does not deteriorate even under high-temperature and high-humidity conditions such as PCT (120 ° C / 2.1 atm), is excellent against thermal shock, and can be particularly effective as a sealing material for large die size semiconductor devices. Heading, make the present invention And it has reached.

従って、本発明は、(A)液状エポキシ樹脂、(B)芳香族アミン系硬化剤、(C)下記一般式(1)もしくは(2)で表される硬化促進剤
R1-[COO-CH(CH3)-O-R2]n (1)
(式中、nは正の数であり、Rはn価の有機基であり、Rは1価の有機基である。RとRは、互いに同じでも異なっても良い。)
H-[OCO-R3-COO-CH(CH3)-OR4-O-CH(CH3)]m-H (2)
(式中、mは正の数であり、R及びRは2価の有機基であり、互いに同じでも異なっても良い。)
を必須成分とすることを特徴とする液状エポキシ樹脂組成物、及び上記液状エポキシ樹脂組成物の硬化物で封止した半導体装置を提供する。更に、上記液状エポキシ樹脂組成物の硬化物をアンダーフィル材として封止したフリップチップ型半導体装置を提供する。
Accordingly, the present invention provides (A) a liquid epoxy resin, (B) an aromatic amine curing agent, (C) a curing accelerator represented by the following general formula (1) or (2)
R 1- [COO-CH (CH 3 ) -OR 2 ] n (1)
(In the formula, n is a positive number, R 1 is an n-valent organic group, R 2 is a monovalent organic group. R 1 and R 2 may be the same or different from each other.)
H- [OCO-R 3 -COO-CH (CH 3 ) -OR 4 -O-CH (CH 3 )] m -H (2)
(In the formula, m is a positive number, R 3 and R 4 are divalent organic groups, and may be the same or different from each other.)
And a semiconductor device sealed with a cured product of the liquid epoxy resin composition. Furthermore, a flip chip type semiconductor device in which a cured product of the liquid epoxy resin composition is sealed as an underfill material is provided.

本発明の液状エポキシ樹脂組成物は、保存性を維持しつつ、低温にて硬化可能であり、かつ硬化時間を短縮することができる。また、シリコンチップの表面、特に感光性ポリイミド樹脂や窒化膜との密着性に優れた硬化物を与え、吸湿後のリフローの温度が従来温度240℃付近から260〜270℃に上昇しても不良が発生せず、更にPCT(120℃/2.1atm)などの高温多湿の条件下でも劣化せず、−65℃/150℃の温度サイクルにおいて数百サイクルを超えても剥離、クラックが起こらない半導体装置を提供することができる。   The liquid epoxy resin composition of the present invention can be cured at a low temperature while maintaining storability, and can shorten the curing time. In addition, it gives a cured product with excellent adhesion to the surface of the silicon chip, particularly photosensitive polyimide resin and nitride film, and even if the reflow temperature after moisture absorption rises from around 240 ° C. to 260 to 270 ° C. Does not occur, and does not deteriorate even under high temperature and high humidity conditions such as PCT (120 ° C / 2.1 atm), and peeling and cracking do not occur even if the temperature cycle of -65 ° C / 150 ° C exceeds several hundred cycles. A semiconductor device can be provided.

(A)液状エポキシ樹脂
本発明の液状エポキシ樹脂組成物において、(A)成分の液状エポキシ樹脂は、好ましくは1分子内に3官能基以下のエポキシ基を含有する常温で液状のエポキシ樹脂であればいかなるものでも使用可能であるが、25℃における粘度が800Pa・s以下、特に500Pa・s以下のものが好ましく、具体的には、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂等のビスフェノール型エポキシ樹脂、ナフタレン型エポキシ樹脂、フェニルグリシジルエーテルなどが挙げられ、これらの中でも室温(25℃)で液状のエポキシ樹脂を使用することが好ましい。また、本発明の液状エポキシ樹脂は、1種を単独で又は2種以上を混合して使用することができる。なお、本発明において、粘度は回転粘度計により25℃における値を測定したものである。
(A) Liquid Epoxy Resin In the liquid epoxy resin composition of the present invention, the liquid epoxy resin of component (A) is preferably an epoxy resin that is liquid at room temperature and contains an epoxy group having 3 or less functional groups in one molecule. Any material can be used, but those having a viscosity at 25 ° C. of 800 Pa · s or less, particularly 500 Pa · s or less are preferable. Specifically, bisphenol type epoxy resins such as bisphenol A type epoxy resin and bisphenol F type epoxy resin are preferable. An epoxy resin, a naphthalene type epoxy resin, a phenyl glycidyl ether, etc. are mentioned, Among these, it is preferable to use a liquid epoxy resin at room temperature (25 degreeC). Moreover, the liquid epoxy resin of this invention can be used individually by 1 type or in mixture of 2 or more types. In the present invention, the viscosity is a value measured at 25 ° C. by a rotational viscometer.

また、本発明のエポキシ樹脂は、下記構造式(3),(4)で示されるエポキシ樹脂を侵入性に影響を及ぼさない範囲で含有していてもよい。   Moreover, the epoxy resin of this invention may contain the epoxy resin shown by following Structural formula (3), (4) in the range which does not affect intrusion property.

Figure 2010077234
Figure 2010077234

ここで、Rは水素原子、又は炭素数1〜20、好ましくは1〜10、更に好ましくは1〜3の一価炭化水素基であり、一価炭化水素基としては、メチル基、エチル基、プロピル基等のアルキル基、ビニル基、アリル基等のアルケニル基などが挙げられる。また、xは1〜4の整数、特に1又は2である。 Here, R 5 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms, preferably 1 to 10 carbon atoms, more preferably 1 to 3 carbon atoms, and examples of the monovalent hydrocarbon group include a methyl group and an ethyl group. And alkyl groups such as propyl group, alkenyl groups such as vinyl group and allyl group. X is an integer of 1 to 4, particularly 1 or 2.

なお、上記式(4)で示されるエポキシ樹脂を配合する場合、その配合量は、全エポキシ樹脂中25質量%以上、より好ましくは50質量%以上、更に好ましくは75質量%以上であることが推奨される。25質量%未満であると組成物の粘度が上昇したり、硬化物の耐熱性が低下したりするおそれがある。なお、その上限は100質量%でもよい。
上記一般式(4)で示されるエポキシ樹脂の例としては、日本化薬社製RE600NM等が挙げられる。
In addition, when mix | blending the epoxy resin shown by the said Formula (4), the compounding quantity is 25 mass% or more in all the epoxy resins, More preferably, it is 50 mass% or more, More preferably, it is 75 mass% or more. Recommended. If it is less than 25% by mass, the viscosity of the composition may increase or the heat resistance of the cured product may decrease. The upper limit may be 100% by mass.
Examples of the epoxy resin represented by the general formula (4) include RE600NM manufactured by Nippon Kayaku Co., Ltd.

上記液状エポキシ樹脂中の全塩素含有量は、1,500ppm以下、望ましくは1,000ppm以下であることが好ましい。また、100℃で50%エポキシ樹脂濃度における20時間での抽出水塩素が10ppm以下であることが好ましい。全塩素含有量が1,500ppmを超え、又は抽出水塩素が10ppmを超えると半導体素子の信頼性、特に耐湿性に悪影響を与えるおそれがある。   The total chlorine content in the liquid epoxy resin is preferably 1,500 ppm or less, more preferably 1,000 ppm or less. Moreover, it is preferable that the extraction water chlorine in 20 hours in the 50% epoxy resin density | concentration at 100 degreeC is 10 ppm or less. If the total chlorine content exceeds 1,500 ppm or the extracted water chlorine exceeds 10 ppm, the reliability of the semiconductor element, particularly the moisture resistance, may be adversely affected.

(B)芳香族アミン系硬化剤
次に、本発明に使用する(B)成分の芳香族アミン系硬化剤としては、芳香族ジアミノジフェニルメタン化合物、例えば、3,3’−ジエチル−4,4’−ジアミノフェニルメタン、3,3’,5,5’−テトラメチル−4,4’−ジアミノフェニルメタン、3,3’,5,5’−テトラエチル−4,4’−ジアミノフェニルメタン、2,4−ジアミノトルエン、1,4−ジアミノベンゼン、1,3−ジアミノベンゼン等の芳香族アミンであることが好ましい。これらは1種を単独で又は2種以上を混合して用いても差し支えない。
(B) Aromatic amine curing agent Next, as the aromatic amine curing agent (B) used in the present invention, an aromatic diaminodiphenylmethane compound such as 3,3′-diethyl-4,4 ′ is used. -Diaminophenylmethane, 3,3 ', 5,5'-tetramethyl-4,4'-diaminophenylmethane, 3,3', 5,5'-tetraethyl-4,4'-diaminophenylmethane, 2, An aromatic amine such as 4-diaminotoluene, 1,4-diaminobenzene, 1,3-diaminobenzene is preferable. These may be used alone or in combination of two or more.

上記芳香族アミン系硬化剤において、常温で固体である場合はそのまま配合すると樹脂粘度が上昇し、作業性が著しく悪くなるため、あらかじめエポキシ樹脂と溶融混合することが好ましく、後述する指定の配合量で、70〜150℃の温度範囲で1時間〜2時間溶融混合することが望ましい。混合温度が70℃未満であると芳香族アミン系硬化剤が十分に相溶しにくくなるおそれがあり、150℃を超える温度であるとエポキシ樹脂と反応して粘度上昇するおそれがある。また、混合時間が1時間未満であると芳香族アミン系硬化剤が十分に相溶せず、粘度上昇を招くおそれがあり、2時間を超えるとエポキシ樹脂と反応し、粘度上昇するおそれがある。   In the above aromatic amine-based curing agent, when it is solid at room temperature, the resin viscosity increases and workability is significantly deteriorated, so it is preferable to melt and mix with the epoxy resin in advance, and the specified blending amount described later Therefore, it is desirable to melt and mix in a temperature range of 70 to 150 ° C. for 1 to 2 hours. If the mixing temperature is less than 70 ° C, the aromatic amine curing agent may not be sufficiently compatible, and if the temperature exceeds 150 ° C, it may react with the epoxy resin and increase the viscosity. Also, if the mixing time is less than 1 hour, the aromatic amine curing agent is not sufficiently compatible and may increase the viscosity, and if it exceeds 2 hours, it may react with the epoxy resin and increase the viscosity. .

なお、本発明に用いられる芳香族アミン系硬化剤の総配合量は、(A)液状エポキシ樹脂と(B)芳香族アミン系硬化剤との当量比〔(A)液状エポキシ樹脂のエポキシ当量/(B)芳香族アミン系硬化剤のアミン当量〕を0.7以上1.2以下、特に0.7以上1.1以下にすることが好ましい。当量比が0.7未満では未反応のアミノ基が残存し、ガラス転移温度が低下したり、また密着性が低下したりするおそれがある。逆に1.2を超えると硬化物が硬く脆くなり、リフロー時にクラックが発生するおそれがある。   The total blending amount of the aromatic amine curing agent used in the present invention is the equivalent ratio of (A) liquid epoxy resin and (B) aromatic amine curing agent [(A) epoxy equivalent of liquid epoxy resin / (B) Amine equivalent of aromatic amine curing agent] is preferably 0.7 or more and 1.2 or less, particularly preferably 0.7 or more and 1.1 or less. If the equivalence ratio is less than 0.7, unreacted amino groups remain, and the glass transition temperature may be lowered or the adhesion may be lowered. On the other hand, if it exceeds 1.2, the cured product becomes hard and brittle, and cracks may occur during reflow.

(C)硬化促進剤
本発明に用いられる(C)成分の硬化促進剤は、一般式(1)及びまたは(2)で表される化合物である。
R1-[COO-CH(CH3)-O-R2]n (1)
式中、nは正の数であり、具体的には1〜5、好ましくは1〜3の数である。Rはn価の有機基であり、具体的にはメチル基、エチル基、プロピル基等の炭素数1〜15のアルキル基、メチレン基、エチレン基、ブチレン基等の炭素数1〜15のアルキレン基、フェニレン基等のアリーレン基、シクロへキシレン基、エチレングリコール基、プロピレングリコール基等が挙げられる。Rは1価の有機基であり、メチル基、エチル基、プロピル基等の炭素数1〜15のアルキル基、フェニル基、キシリル基、ビフェニル基等のアリール基、ビニル基、アリル基等のアルケニル基等が挙げられる。RとRは、互いに同じでも異なっても良い。)
(C) Curing accelerator The curing accelerator of the component (C) used in the present invention is a compound represented by the general formula (1) and / or (2).
R 1- [COO-CH (CH 3 ) -OR 2 ] n (1)
In the formula, n is a positive number, specifically 1 to 5, preferably 1 to 3. R 1 is an n-valent organic group, specifically, an alkyl group having 1 to 15 carbon atoms such as a methyl group, an ethyl group, or a propyl group, or a C 1 to 15 carbon group such as a methylene group, an ethylene group, or a butylene group. Examples include an arylene group such as an alkylene group and a phenylene group, a cyclohexylene group, an ethylene glycol group, and a propylene glycol group. R 2 is a monovalent organic group such as an alkyl group having 1 to 15 carbon atoms such as a methyl group, an ethyl group or a propyl group, an aryl group such as a phenyl group, a xylyl group or a biphenyl group, a vinyl group or an allyl group. An alkenyl group etc. are mentioned. R 1 and R 2 may be the same as or different from each other. )

H-[OCO-R3-COO-CH(CH3)-OR4-O-CH(CH3)]m-H (2)
式中、mは正の数であり、好ましくは1〜20、さらに好ましくは1〜10である。具体的にはmは上記(2)の分子量が200〜3000、好ましくは500〜2500となるように決められる。R及びRは2価の有機基であり、具体的には、メチレン基、エチレン基、ブチレン基等の炭素数1〜10のアルキレン基、フェニレン基等のアリーレン基、シクロへキシレン基、エチレングリコール基、プロピレングリコール基等が挙げられる。R及びRは互いに同じでも異なっても良い。
H- [OCO-R 3 -COO-CH (CH 3 ) -OR 4 -O-CH (CH 3 )] m -H (2)
In formula, m is a positive number, Preferably it is 1-20, More preferably, it is 1-10. Specifically, m is determined so that the molecular weight of (2) is 200 to 3000, preferably 500 to 2500. R 3 and R 4 are divalent organic groups, specifically, alkylene groups having 1 to 10 carbon atoms such as methylene group, ethylene group, butylene group, arylene groups such as phenylene group, cyclohexylene group, An ethylene glycol group, a propylene glycol group, etc. are mentioned. R 3 and R 4 may be the same or different from each other.

上記一般式(1)及び(2)で表される硬化促進剤は、カルボン酸類とビニルエーテル化合物の反応により得ることができる。例えば(1)の化合物は、下記反応により得ることができる。
R1-(COOH)n+nR2-O-CH=CH2 → R1-[COO-CH(CH3)-O-R2]n
The curing accelerators represented by the above general formulas (1) and (2) can be obtained by a reaction between carboxylic acids and a vinyl ether compound. For example, the compound (1) can be obtained by the following reaction.
R 1- (COOH) n + nR 2 -O-CH = CH 2 → R 1- [COO-CH (CH 3 ) -OR 2 ] n

また、(2)の化合物は、下記反応により得ることができる。
mR1-(COOH)2+mH2C=CH-O-R4-O-CH=CH2 → H-[OCO-R3-COO-CH(CH3)-OR4-O-CH(CH3)]m-H
The compound (2) can be obtained by the following reaction.
mR 1- (COOH) 2 + mH 2 C = CH-OR 4 -O-CH = CH 2 → H- [OCO-R 3 -COO-CH (CH 3 ) -OR 4 -O-CH (CH 3 ) ] m -H

カルボン酸類としては、安息香酸、イソフタル酸、イソフタル酸、テレフタル酸、ヘミメリット酸、トリメリット酸、トリメシン酸、メロファン酸、プレーニト酸、ピロメリット酸、メリット酸、トルイル酸、キシリル酸、ヘメリト酸、ケイ皮酸、サリチル酸、クレオソート酸、CIC酸、マレイン酸、イタコン酸、アジピン酸、酢酸、アクリル酸、イソシアヌル酸、その他カルボキシル基含有ポリブタジエン等が挙げられる。またビニルエーテル化合物としてはnプロピルビニルエーテル、イソプロピルビニルエーテル、nブチルビニルエーテル、エチルビニルエーテル、シクロヘキシルビニルエーテル、2−エチルヘキシルビニルエーテル、オクタデシルビニルエーテル、アリルビニルエーテル、ハイドロキシエチルビニルエーテル、1,4−ブタンジオールジビニルエーテル、ノナンジオールジビニルエーテル、シクロヘキサンジオールジビニルエーテル、トリエチレングリコールジビニルエーテル、シクロヘキサンジメタノールジビニルエーテル等を含有するビニルエーテル類が挙げられる。   Carboxylic acids include benzoic acid, isophthalic acid, isophthalic acid, terephthalic acid, hemimellitic acid, trimellitic acid, trimesic acid, merophanic acid, planitic acid, pyromellitic acid, merit acid, toluic acid, xylic acid, hemelic acid, Examples thereof include cinnamic acid, salicylic acid, creosote acid, CIC acid, maleic acid, itaconic acid, adipic acid, acetic acid, acrylic acid, isocyanuric acid, and other carboxyl group-containing polybutadiene. As vinyl ether compounds, n-propyl vinyl ether, isopropyl vinyl ether, n-butyl vinyl ether, ethyl vinyl ether, cyclohexyl vinyl ether, 2-ethylhexyl vinyl ether, octadecyl vinyl ether, allyl vinyl ether, hydroxyethyl vinyl ether, 1,4-butanediol divinyl ether, nonanediol divinyl ether And vinyl ethers containing cyclohexanediol divinyl ether, triethylene glycol divinyl ether, cyclohexanedimethanol divinyl ether, and the like.

上記のカルボン酸類はエポキシ基との反応性が高く、直接エポキシ樹脂に添加した場合、低温硬化及び短時間硬化は可能となるが樹脂の可使時間が非常に短くなる。本発明においては、カルボン酸をビニルエーテルにより保護することにより、保存状態では酸の活性を押さえることを可能とし、樹脂を硬化させる場合上記硬化促進剤はビニルエーテルの熱解離を起こしカルボキシル基を生成し硬化を促進するため、低温及び短時間硬化を可能とせしめるものである。   The above carboxylic acids are highly reactive with epoxy groups, and when added directly to an epoxy resin, low-temperature curing and short-time curing are possible, but the usable time of the resin is very short. In the present invention, by protecting the carboxylic acid with vinyl ether, it is possible to suppress the activity of the acid in the storage state, and when curing the resin, the curing accelerator causes thermal dissociation of the vinyl ether to generate a carboxyl group and cure. In order to promote this, it is possible to cure at low temperature and for a short time.

上記カルボン酸類の低温での活性を押さえるため。カルボン酸類をポリメタクリル酸のような熱可塑樹脂でコアシェルタイプのマイクロカプセルとする方法もあるが、近年のフリップチップ型半導体装置のダイ基板間距離は数十μm以下が主流であるためマイクロカプセルの粒径は樹脂の流動性を阻害させないため数μm以下にする必要があるが、このような大きさのマイクロカプセルを作成すると硬化促進剤として潜在性が下するため樹脂の可使時間が低下するため好ましくない。   To suppress the activity of the carboxylic acids at low temperatures. There is also a method in which a carboxylic acid is a core-shell type microcapsule made of a thermoplastic resin such as polymethacrylic acid, but the distance between die substrates of flip chip type semiconductor devices in recent years is mainly several tens μm or less, so that The particle size needs to be several μm or less in order not to impede the fluidity of the resin. However, when microcapsules of such a size are made, the potential for use as a curing accelerator is lowered and the pot life of the resin is reduced. Therefore, it is not preferable.

本発明において硬化促進剤(C)の配合量は(A)液状エポキシ樹脂と、(B)芳香族アミン系硬化剤との総量100質量部に対して0.05質量部〜20質量部、望ましくは0.05質量部〜10質量部であることが好ましい。0.05質量部以下であると硬化促進性が低下する恐れがあり、20質量部を超えると硬化物物性が低下する。   In this invention, the compounding quantity of a hardening accelerator (C) is 0.05-20 mass parts with respect to 100 mass parts of total amounts of (A) liquid epoxy resin and (B) aromatic amine type hardening | curing agent, Desirably Is preferably 0.05 to 10 parts by mass. If it is 0.05 parts by mass or less, the curing accelerating property may be lowered, and if it exceeds 20 parts by mass, the properties of the cured product are lowered.

その他の添加剤
本発明においては無機質充填剤(D)は、膨張係数を小さくする目的から、公知の各種無機質充填剤を添加することができる。無機質充填剤として、具体的には、溶融シリカ、結晶シリカ、アルミナ、ボロンナイトライド、チッカアルミニウム、チッカ珪素、マグネシア、マグネシウムシリケート、アルミニウムなどが挙げられる。中でも真球状の溶融シリカが低粘度化のため望ましい。
Other Additives In the present invention, various inorganic fillers known in the art can be added to the inorganic filler (D) for the purpose of reducing the expansion coefficient. Specific examples of the inorganic filler include fused silica, crystalline silica, alumina, boron nitride, ticker aluminum, ticker silicon, magnesia, magnesium silicate, aluminum and the like. Among them, spherical fused silica is desirable for reducing the viscosity.

無機質充填剤は、樹脂と無機質充填剤との結合強度を強くするため、シランカップリング剤、チタネートカップリング剤などのカップリング剤で予め表面処理したものを配合することが好ましい。このようなカップリング剤としては、γ−グリシドキシプロピルトリメトキシシラン、γ−グリシドキシプロピルメチルジエトキシシラン、β−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン等のエポキシシラン、N−β(アミノエチル)−γ−アミノプロピルトリメトキシシラン、γ−アミノプロピルトリエトキシシラン、N−フェニル−γ−アミノプロピルトリメトキシシラン等のアミノシラン、γ−メルカプトシラン等のメルカプトシランなどのシランカップリング剤を用いることが好ましい。ここで、表面処理に用いるカップリング剤の配合量及び表面処理方法については、特に制限されるものではない。   In order to increase the bond strength between the resin and the inorganic filler, the inorganic filler is preferably blended in advance with a surface treatment with a coupling agent such as a silane coupling agent or a titanate coupling agent. As such a coupling agent, epoxy silane such as γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, N Silane cups such as aminosilanes such as -β (aminoethyl) -γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, and mercaptosilanes such as γ-mercaptosilane It is preferable to use a ring agent. Here, the blending amount of the coupling agent used for the surface treatment and the surface treatment method are not particularly limited.

本発明の組成物をポッティング材として使用する場合、無機質充填剤は、平均粒径が2〜20μmで、最大粒径が75μm以下、特に50μm以下のものが望ましい。平均粒径が2μm未満では粘度が高くなり、多量に充填できない場合があり、一方20μmを超えると粗い粒子が多くなり、リード線につまり、ボイドとなるおそれがある。   When the composition of the present invention is used as a potting material, the inorganic filler preferably has an average particle diameter of 2 to 20 μm and a maximum particle diameter of 75 μm or less, particularly 50 μm or less. If the average particle size is less than 2 μm, the viscosity is high and a large amount may not be filled. On the other hand, if the average particle size is more than 20 μm, coarse particles increase, which may lead to voids in the lead wire.

この場合、無機質充填剤の充填量は、(A)液状エポキシ樹脂と、(B)芳香族アミン系硬化剤との総量100質量部に対して100〜1,200質量部の範囲が好ましい。100質量部未満では、膨張係数が大きく、冷熱試験においてクラックの発生を誘発させるおそれがある。1,200質量部を超えると、粘度が高くなり、流動性の低下をもたらすおそれがある。   In this case, the filling amount of the inorganic filler is preferably in the range of 100 to 1,200 parts by mass with respect to 100 parts by mass of the total amount of (A) liquid epoxy resin and (B) aromatic amine curing agent. If it is less than 100 parts by mass, the expansion coefficient is large, and there is a risk of inducing cracks in the cold test. If it exceeds 1,200 parts by mass, the viscosity becomes high and the fluidity may be lowered.

なお、アンダーフィル材として使用する場合には、無機質充填剤は、侵入性の向上と低線膨張化の両立を図るため、フリップチップギャップ幅(基板と半導体チップとの隙間)に対して平均粒径が約1/10以下、最大粒径が1/2以下とすることが好ましい。   When used as an underfill material, the inorganic filler has an average particle size relative to the flip chip gap width (gap between the substrate and the semiconductor chip) in order to achieve both improved penetration and low linear expansion. It is preferable that the diameter is about 1/10 or less and the maximum particle diameter is 1/2 or less.

この場合の無機質充填剤の配合量としては、(A)液状エポキシ樹脂と、(B)芳香族アミン系硬化剤との総量100質量部に対して50〜400質量部で配合することが好ましく、より好ましくは100〜250質量部の範囲で配合する。50質量部未満では、膨張係数が大きく、冷熱試験においてクラックの発生を誘発させるおそれがある。400質量部を超えると、粘度が高くなり、薄膜侵入性の低下をもたらすおそれがある。   As a compounding quantity of the inorganic filler in this case, it is preferable to mix | blend by 50-400 mass parts with respect to 100 mass parts of total amounts of (A) liquid epoxy resin and (B) aromatic amine type hardening | curing agents, More preferably, it mix | blends in 100-250 mass parts. If it is less than 50 parts by mass, the expansion coefficient is large, and there is a risk of inducing cracks in the cold test. If it exceeds 400 parts by mass, the viscosity will increase and the thin film penetration may be reduced.

本発明のエポキシ樹脂組成物には、応力を低下させる目的でシリコーンゴム、シリコーンオイルや液状のポリブタジエンゴム、メタクリル酸メチル−ブタジエン−スチレンよりなる熱可塑性樹脂などを配合してもよい。好ましくは、アルケニル基含有エポキシ樹脂又はフェノール樹脂のアルケニル基と下記平均組成式(4)で示される1分子中の珪素原子の数が20〜400であり、珪素原子に結合した水素原子(SiH基)の数が1〜5であるオルガノポリシロキサンのSiH基との付加反応により得られる共重合体を配合することが好ましい。   The epoxy resin composition of the present invention may be blended with silicone rubber, silicone oil, liquid polybutadiene rubber, thermoplastic resin made of methyl methacrylate-butadiene-styrene, or the like for the purpose of reducing stress. Preferably, the alkenyl group of the alkenyl group-containing epoxy resin or phenol resin and the number of silicon atoms in one molecule represented by the following average composition formula (4) are 20 to 400, and a hydrogen atom bonded to the silicon atom (SiH group) ) Is preferably blended with a copolymer obtained by addition reaction with SiH groups of organopolysiloxane having 1-5.

SiO(4−a−b)/2 (5)
(式中、Rは非置換又は置換の一価の炭化水素基、aは0.01〜0.1、bは1.8〜2.2、1.81≦a+b≦2.3である。)
H a R 6 b SiO (4-ab) / 2 (5)
(Wherein R 5 is an unsubstituted or substituted monovalent hydrocarbon group, a is 0.01 to 0.1, b is 1.8 to 2.2, and 1.81 ≦ a + b ≦ 2.3. .)

なお、Rの一価炭化水素基としては、炭素数1〜10、特に1〜8のものが好ましく、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、tert−ブチル基、ヘキシル基、オクチル基、デシル基等のアルキル基、ビニル基、アリル基、プロペニル基、ブテニル基、ヘキセニル基等のアルケニル基、フェニル基、キシリル基、トリル基等のアリール基、ベンジル基、フェニルエチル基、フェニルプロピル基等のアラルキル基などや、これらの炭化水素基の水素原子の一部又は全部を塩素、フッ素、臭素等のハロゲン原子で置換したフロロメチル基、ブロモエチル基、トリフルオロプロピル基等のハロゲン置換一価炭化水素基を挙げることができる。
上記共重合体としては、中でも下記構造式(6)のものが望ましい。
The monovalent hydrocarbon group for R 6 preferably has 1 to 10 carbon atoms, particularly 1 to 8 carbon atoms, and is preferably a methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, or tert-butyl group. , Alkyl groups such as hexyl group, octyl group and decyl group, alkenyl groups such as vinyl group, allyl group, propenyl group, butenyl group and hexenyl group, aryl groups such as phenyl group, xylyl group and tolyl group, benzyl group and phenyl group Fluoromethyl group, bromoethyl group, trifluoropropyl group, etc. in which some or all of the hydrogen atoms of these hydrocarbon groups are substituted with halogen atoms such as chlorine, fluorine, bromine, etc. And halogen-substituted monovalent hydrocarbon groups.
As the above-mentioned copolymer, those of the following structural formula (6) are particularly desirable.

Figure 2010077234
Figure 2010077234

上記式中、Rは上記と同じであり、Rは−CHCHCH−、−OCH−CH(OH)−CH−O−CHCHCH−又は−O−CHCHCH−であり、Rは水素原子又は炭素数1〜4のアルキル基である。nは4〜199、好ましくは19〜99の整数、pは1〜10の整数、qは1〜10の整数である。 In the above formula, R 5 is the same as above, and R 6 is —CH 2 CH 2 CH 2 —, —OCH 2 —CH (OH) —CH 2 —O—CH 2 CH 2 CH 2 — or —O—. CH 2 CH 2 CH 2 —, and R 7 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. n is an integer of 4 to 199, preferably 19 to 99, p is an integer of 1 to 10, and q is an integer of 1 to 10.

上記共重合体をジオルガノポリシロキサン単位が(A)液状エポキシ樹脂100質量部に対して0〜20質量部、特には2〜15質量部含まれるように配合することで応力をより一層低下させることができる。   The stress is further reduced by blending the above copolymer so that the diorganopolysiloxane unit is contained in an amount of 0 to 20 parts by mass, particularly 2 to 15 parts by mass with respect to 100 parts by mass of the liquid epoxy resin (A). be able to.

本発明の液状エポキシ樹脂組成物には、更に必要に応じ、接着向上用炭素官能性シラン、カーボンブラックなどの顔料、染料、酸化防止剤、その他の添加剤を本発明の目的を損なわない範囲で配合することができる。ただし、本発明においては、表面処理剤として使用する以外に接着向上用炭素官能性シラン等としてアルコキシ系シランカップリング剤を添加しないことが好ましい。特に、アンダーフィル材として用いる場合、少量でもアルコキシ系シランカップリング剤を配合すると、ボイドの原因となるおそれがある。   In the liquid epoxy resin composition of the present invention, if necessary, a carbon functional silane for improving adhesion, a pigment such as carbon black, a dye, an antioxidant, and other additives within a range not impairing the object of the present invention. Can be blended. However, in the present invention, it is preferable not to add an alkoxy-based silane coupling agent as a carbon-functional silane for improving adhesion other than the use as a surface treatment agent. In particular, when used as an underfill material, if an alkoxy-based silane coupling agent is blended even in a small amount, it may cause voids.

本発明の液状エポキシ樹脂組成物は、例えば、液状エポキシ樹脂、芳香族アミン系硬化剤、硬化促進剤、必要に応じて無機質充填剤及びその他の添加剤等を同時に又は別々に、必要により加熱処理を加えながら、撹拌、溶解、混合、分散させることにより得ることができる。これらの混合、撹拌、分散等の装置としては、特に限定されるものではないが、撹拌、加熱装置を備えたライカイ機、3本ロール、ボールミル、プラネタリーミキサー等を用いることができる。またこれら装置を適宜組み合わせて使用してもよい。   The liquid epoxy resin composition of the present invention is, for example, a liquid epoxy resin, an aromatic amine-based curing agent, a curing accelerator, and if necessary, an inorganic filler and other additives simultaneously or separately, and if necessary, heat treatment Can be obtained by stirring, dissolving, mixing and dispersing. The apparatus for mixing, stirring, dispersing and the like is not particularly limited, and a lykai machine, a three roll, a ball mill, a planetary mixer and the like equipped with a stirring and heating device can be used. Moreover, you may use combining these apparatuses suitably.

なお、本発明において、封止材として用いる液状エポキシ樹脂組成物の粘度は、25℃において1,000Pa・s以下、特に10〜800Pa・sのものが好ましい。また、この組成物の成形方法、成形条件は、常法とすることができるが、好ましくは、先に100〜110℃、0.2時間以上、特に0.2〜0.5時間、その後120〜250℃、0.5時間以上、特に0.5〜5時間の条件で熱オーブンキュアを行う。100〜110℃での加熱が0.2時間未満では、硬化後にボイドが発生する場合がある。また120〜250℃での加熱が0.5時間未満では、十分な硬化物特性が得られない場合がある。   In the present invention, the viscosity of the liquid epoxy resin composition used as the sealing material is preferably 1,000 Pa · s or less, particularly 10 to 800 Pa · s at 25 ° C. The molding method and molding conditions of this composition may be conventional methods, but preferably 100 to 110 ° C. for 0.2 hours or longer, particularly 0.2 to 0.5 hours, and then 120 Heat oven cure is performed under conditions of ˜250 ° C. and 0.5 hours or more, particularly 0.5 to 5 hours. When heating at 100 to 110 ° C. is less than 0.2 hours, voids may occur after curing. Further, if the heating at 120 to 250 ° C. is less than 0.5 hour, sufficient cured product characteristics may not be obtained.

ここで、本発明に用いるフリップチップ型半導体装置としては、例えば図1に示したように、通常、有機基板1の配線パターン面に複数個のバンプ2を介して半導体チップ3が搭載されているものであり、上記有機基板1と半導体チップ3との隙間(バンプ2間の隙間)にアンダーフィル材4が充填され、その側部がフィレット材5で封止されたものとすることができるが、本発明の封止材は、特にこのようなアンダーフィル材として使用する場合に有効である。   Here, as a flip chip type semiconductor device used in the present invention, for example, as shown in FIG. 1, for example, a semiconductor chip 3 is usually mounted on a wiring pattern surface of an organic substrate 1 via a plurality of bumps 2. The gap between the organic substrate 1 and the semiconductor chip 3 (the gap between the bumps 2) is filled with the underfill material 4 and the side portion thereof is sealed with the fillet material 5. The sealing material of the present invention is particularly effective when used as such an underfill material.

以下、実施例及び比較例を示し、本発明を具体的に説明するが、本発明は下記の実施例に制限されるものではない。   EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated concretely, this invention is not restrict | limited to the following Example.

[実施例1〜4、比較例1〜3]
表1で示す成分を3本ロールで均一に混練することにより、7種の樹脂組成物を得た。これらの樹脂組成物を用いて、以下に示す試験を行った。その結果を表2に示す。
なお本発明に用いる硬化促進剤として下記のものを用いた。
[Examples 1-4, Comparative Examples 1-3]
Seven types of resin compositions were obtained by uniformly kneading the components shown in Table 1 with three rolls. The test shown below was done using these resin compositions. The results are shown in Table 2.
In addition, the following were used as a hardening accelerator used for this invention.

[粘度]
BH型回転粘度計を用いて4rpmの回転数で25℃における粘度を測定した。
[viscosity]
The viscosity at 25 ° C. was measured at a rotation speed of 4 rpm using a BH type rotational viscometer.

[保存性]
25℃/60%RHにおいて樹脂組成物を保存し、上記測定条件で20%粘度上昇するのに要した時間の1/2の時間を保存性とした。
[Preservation]
The resin composition was stored at 25 ° C./60% RH, and half the time required to increase the viscosity by 20% under the above measurement conditions was defined as storage stability.

[ゲル化時間]
150℃のホットプレートに0.5ccの液状樹脂組成物を滴下し、スパチュラで撹拌して糸引きが切れるところでゲル化時間とした。
[Gelification time]
A 0.5 cc liquid resin composition was dropped onto a 150 ° C. hot plate and stirred with a spatula to determine the gelation time when the stringing was broken.

[Tg(ガラス転移温度)、CTE1(膨張係数)、CTE2(膨張係数)]
樹脂組成物を110/0.5時間+120/2.0時間の条件で硬化させた5mm×5mm×15mmの硬化物試験片を用いて、TMA(熱機械分析装置)により毎分5℃の速さで昇温した時のTgを測定した。また、以下の温度範囲の膨張係数を測定した。
CTE1の温度範囲は50〜80℃、CTE2の温度範囲は200〜230℃である。
[Tg (glass transition temperature), CTE1 (expansion coefficient), CTE2 (expansion coefficient)]
Using a cured product specimen of 5 mm × 5 mm × 15 mm in which the resin composition was cured under the conditions of 110 / 0.5 hours + 120 / 2.0 hours, TMA (thermomechanical analyzer) was used at a rate of 5 ° C. per minute. The Tg when the temperature was raised was measured. Moreover, the expansion coefficient in the following temperature range was measured.
The temperature range of CTE1 is 50 to 80 ° C, and the temperature range of CTE2 is 200 to 230 ° C.

[接着力テスト]
感光性ポリイミドをコートしたシリコンチップ上に、上面の直径2mm、下面の直径5mm、高さ3mmの円錐台形状の樹脂組成物試験片を載せ、110/0.5時間+120/2.0時間硬化させた。硬化後、得られた試験片の剪断接着力を測定し、初期値とした。更に、硬化させた試験片をPCT(121℃/2.1atm)で336時間吸湿させた後、接着力を測定した。いずれの場合も試験片の個数は5個で行い、その平均値を接着力として表記した。
[Adhesion test]
On a silicon chip coated with photosensitive polyimide, a resin composition test piece in the shape of a truncated cone having a diameter of 2 mm on the upper surface, a diameter of 5 mm on the lower surface, and a height of 3 mm is placed and cured for 110 / 0.5 hours + 120 / 2.0 hours. I let you. After curing, the shear strength of the obtained specimen was measured and used as the initial value. Further, the cured test piece was absorbed with PCT (121 ° C./2.1 atm) for 336 hours, and then the adhesive strength was measured. In any case, the number of test pieces was five, and the average value was expressed as adhesive strength.

[PCT剥離テスト]
ポリイミドコートした10mm×10mmのシリコンチップを30mm×30mmのFR−4基板に約100μmのスペーサを用いて設置し、生じた隙間に樹脂組成物を侵入させて110/0.5時間+120/2.0時間の条件で硬化させ、30℃/65%RH/192時間後に最高温度265℃に設定したIRリフローにて5回処理した後の剥離、更にPCT(121℃/2.1atm)の環境下に置き、336時間後の剥離をC−SAM(SONIX社製)で確認した。
[PCT peel test]
A polyimide-coated 10 mm × 10 mm silicon chip was placed on a 30 mm × 30 mm FR-4 substrate using a spacer of about 100 μm, and the resin composition was intruded into the generated gap for 110 / 0.5 hours + 120/2. Peeling after curing for 5 hours with IR reflow set at maximum temperature of 265 ° C after 30 ° C / 65% RH / 192 hours after curing at 0 ° C, and further in PCT (121 ° C / 2.1 atm) environment The peeling after 336 hours was confirmed by C-SAM (manufactured by SONIX).

[熱衝撃テスト]
ポリイミドコートした10mm×10mmのシリコンチップを30mm×30mmのFR−4基板に約100μmのスペーサを用いて設置し、生じた隙間に樹脂組成物を侵入させて110/0.5時間+120/2.0時間の条件で硬化させ、30℃/65%RH/192時間後に最高温度265℃に設定したIRリフローにて5回処理した後、−65℃/30分、150℃/30分を1サイクルとし、250,500,750,1000サイクル後の剥離、クラックを確認した。
[Thermal shock test]
A polyimide-coated 10 mm × 10 mm silicon chip was placed on a 30 mm × 30 mm FR-4 substrate using a spacer of about 100 μm, and the resin composition was intruded into the generated gap for 110 / 0.5 hours + 120/2. Curing was performed under the conditions of 0 hours, and after 30 treatments with IR reflow set to a maximum temperature of 265 ° C. after 30 ° C./65% RH / 192 hours, a cycle of −65 ° C./30 minutes and 150 ° C./30 minutes was performed. And peeling and cracking after 250,500,750,1000 cycles were confirmed.

Figure 2010077234
Figure 2010077234

(A)液状エポキシ樹脂
エポキシ樹脂a:ビスフェノールF型エポキシ樹脂(日本化薬(株)製、RE303S−L)
エポキシ樹脂b:下記式(7)で示される3官能型エポキシ樹脂(ジャパンエポキシレジン(株)製、エピコート630H)
(A) Liquid epoxy resin epoxy resin a: bisphenol F type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., RE303S-L)
Epoxy resin b: trifunctional epoxy resin represented by the following formula (7) (Japan Epoxy Resin Co., Ltd., Epicoat 630H)

Figure 2010077234
Figure 2010077234

(B)芳香族アミン系硬化剤
芳香族アミン系硬化剤A:ジエチルジアミノジフェニルメタン(日本化薬(株)製、カヤハードA−A)
芳香族アミン系硬化剤B:テトラエチルジアミノフェニルメタン(日本化薬(株)製、C−300S)
(B) Aromatic amine curing agent Aromatic amine curing agent A: Diethyldiaminodiphenylmethane (manufactured by Nippon Kayaku Co., Ltd., Kayahard AA)
Aromatic amine curing agent B: Tetraethyldiaminophenylmethane (Nippon Kayaku Co., Ltd., C-300S)

(C)硬化促進剤
硬化促進剤A:安息香酸−ビニルエーテル付加物 C6H5COOCH(CH3)OC3H7
硬化促進剤B:アジピン酸−ビニルエーテル共重合体
H-[OCO(CH2)4COOCH(CH3)O(CH2)4OCH(CH3)]m-H
(但し、mは平均分子量が2000となる数である。)
(C) Curing accelerator Curing accelerator A: Benzoic acid-vinyl ether adduct C 6 H 5 COOCH (CH 3 ) OC 3 H 7
Curing accelerator B: adipic acid-vinyl ether copolymer
H- [OCO (CH 2 ) 4 COOCH (CH 3 ) O (CH 2 ) 4 OCH (CH 3 )] m -H
(However, m is a number with an average molecular weight of 2000.)

(D)無機質充填剤:最大粒径50μm、平均粒径10μmの球状シリカ (D) Inorganic filler: spherical silica having a maximum particle size of 50 μm and an average particle size of 10 μm

その他の添加剤
共重合体:下記式(8)の化合物と下記式(9)の化合物との付加反応生成物からなるシリコーン変性エポキシ樹脂
Other additive copolymer: silicone-modified epoxy resin comprising an addition reaction product of a compound of the following formula (8) and a compound of the following formula (9)

Figure 2010077234

シランカップリング剤:γ−グリシドキシプロピルトリメトキシシラン(信越化学工業(株)製、KBM403)
カーボンブラック:デンカブラック(電気化学工業(株)製)
Figure 2010077234

Silane coupling agent: γ-glycidoxypropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM403)
Carbon black: Denka Black (manufactured by Denki Kagaku Kogyo Co., Ltd.)

Figure 2010077234
Figure 2010077234

本発明の封止材を用いたフリップチップ型半導体装置の一例を示す断面図である。It is sectional drawing which shows an example of the flip chip type semiconductor device using the sealing material of this invention.

符号の説明Explanation of symbols

1 有機基板
2 バンプ
3 半導体チップ
4 アンダーフィル材
5 フィレット材
DESCRIPTION OF SYMBOLS 1 Organic substrate 2 Bump 3 Semiconductor chip 4 Underfill material 5 Fillet material

Claims (5)

(A)液状エポキシ樹脂、
(B)芳香族アミン系硬化剤、
(C)硬化促進剤として下記一般式(1)及び又は(2)
R1-[COO-CH(CH3)-O-R2]n (1)
(式中、nは正の数であり、Rはn価の有機基であり、Rは1価の有機基である。RとRは、互いに同じでも異なっても良い。)
H-[OCO-R3-COO-CH(CH3)-OR4-O-CH(CH3)]m-H (2)
(式中、mは正の数であり、R及びRは2価の有機基であり、互いに同じでも異なっても良い。)
により表される化合物を必須成分とすることを特徴とする液状エポキシ樹脂組成物。
(A) Liquid epoxy resin,
(B) an aromatic amine curing agent,
(C) The following general formula (1) and / or (2) as a curing accelerator
R 1- [COO-CH (CH 3 ) -OR 2 ] n (1)
(In the formula, n is a positive number, R 1 is an n-valent organic group, R 2 is a monovalent organic group. R 1 and R 2 may be the same or different from each other.)
H- [OCO-R 3 -COO-CH (CH 3 ) -OR 4 -O-CH (CH 3 )] m -H (2)
(In the formula, m is a positive number, R 3 and R 4 are divalent organic groups, and may be the same or different from each other.)
A liquid epoxy resin composition comprising a compound represented by the formula:
(A)液状エポキシ樹脂と(B)芳香族アミン系硬化剤との当量比〔(A)液状エポキシ樹脂のエポキシ当量/(B)芳香族アミン系硬化剤のアミン当量〕が0.7以上1.2以下である請求項1記載の液状エポキシ樹脂組成物。   Equivalent ratio of (A) liquid epoxy resin and (B) aromatic amine curing agent [(A) epoxy equivalent of liquid epoxy resin / (B) amine equivalent of aromatic amine curing agent] is 0.7 or more and 1 The liquid epoxy resin composition according to claim 1, which is .2 or less. (A)液状エポキシ樹脂と(B)芳香族アミン系硬化剤との総量100質量部に対し、(C)硬化促進剤が0.05質量部〜20質量部であることを特徴とする請求項1記載のエポキシ樹脂組成物。   The (C) curing accelerator is 0.05 parts by mass to 20 parts by mass with respect to 100 parts by mass of the total amount of (A) liquid epoxy resin and (B) aromatic amine curing agent. The epoxy resin composition according to 1. 請求項1乃至3のいずれか1項記載の液状エポキシ樹脂組成物で封止された半導体装置。   A semiconductor device sealed with the liquid epoxy resin composition according to claim 1. 請求項1乃至3のいずれか1項記載の液状エポキシ樹脂組成物をフリップチップ型半導体装置のダイ基板間のギャップに注入し硬化させ封止したフリップチップ型半導体装置。   A flip chip type semiconductor device in which the liquid epoxy resin composition according to claim 1 is injected into a gap between die substrates of a flip chip type semiconductor device, cured and sealed.
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