JP2011040468A - Antireflection film for solid-state image pickup element - Google Patents

Antireflection film for solid-state image pickup element Download PDF

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JP2011040468A
JP2011040468A JP2009184495A JP2009184495A JP2011040468A JP 2011040468 A JP2011040468 A JP 2011040468A JP 2009184495 A JP2009184495 A JP 2009184495A JP 2009184495 A JP2009184495 A JP 2009184495A JP 2011040468 A JP2011040468 A JP 2011040468A
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phase inversion
antireflection
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Kenji Imai
憲次 今井
Yuichi Inaba
雄一 稲葉
Masao Kirihara
昌男 桐原
Yusuke Hashimoto
裕介 橋本
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Panasonic Electric Works Co Ltd
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Abstract

【課題】固体撮像素子の受光部以外の箇所に被膜される遮光用金属膜上に設けられる反射防止膜において、近赤外領域の光に対する反射防止効果を向上させる。
【解決手段】反射防止膜１は、遮光用金属膜３の上層にある位相反転用絶縁層４と、この位相反転用絶縁層４の上層にある表層金属層５と、表層金属層５の上層にある保護膜層６と、を備える。また、位相反転用絶縁層４は、その屈折率をｎ、対象波長の波長をλとしたときに、略λ／４ｎとなる膜厚に成膜され、表層金属層５は、シート抵抗が略１００〜４５０Ω／□となる膜厚に成膜される。この構成によれば、遮光用金属膜３の表面に入射した光の一部を、位相反転用絶縁層４の表面と遮光用金属膜３の表面との間で、位相反転させながら繰り返し再反射させて消衰させることにより、高い反射防止効果を実現できる。
【選択図】図１An antireflection film provided on a light-shielding metal film coated on a portion other than a light receiving portion of a solid-state imaging device improves an antireflection effect on light in the near infrared region.
An antireflection film includes a phase inversion insulating layer overlying a light shielding metal film, a surface metal layer overlying the phase inversion insulating layer, and an upper layer of the surface metal layer. And a protective film layer 6. The phase inversion insulating layer 4 is formed to a thickness of approximately λ / 4n when the refractive index is n and the wavelength of the target wavelength is λ, and the surface metal layer 5 has a sheet resistance of approximately The film is formed to a thickness of 100 to 450Ω / □. According to this configuration, a part of light incident on the surface of the light shielding metal film 3 is repeatedly rereflected while being phase-inverted between the surface of the phase inversion insulating layer 4 and the surface of the light shielding metal film 3. By making them extinguish, a high antireflection effect can be realized.
[Selection] Figure 1

Description

本発明は、固体撮像素子の遮光用金属膜上に設けられる固体撮像素子用の反射防止膜に関する。   The present invention relates to an antireflection film for a solid-state image sensor provided on a light-shielding metal film of a solid-state image sensor.

従来から、対象となる空間に光を照射して、その光が反射して返ってくるまでの到達時間を画素毎に計測すると共に、それらの画像情報を重ねることで、対象となる画像と、その対象までの距離とを画素毎に出力する距離画像センサが知られている。一般に、この種の距離画像センサにおいては、人の目視等や通常の撮像に影響を与えないように、計測用の照射光として近赤外線が用いられる。   Conventionally, by irradiating the target space with light, measuring the arrival time until the light is reflected and returned for each pixel, and overlapping the image information, the target image, A distance image sensor that outputs the distance to the target for each pixel is known. In general, in this type of distance image sensor, near infrared rays are used as irradiation light for measurement so as not to affect human visual observation or normal imaging.

例えば、ＣＣＤ撮像素子を用いた周囲光消去型の距離画像センサにおける撮像部は、複数の画素を構成する光電変換部（受光部）と、各画素の仕切りとなる周囲光消去機能領域とが設けられている。そして、この周囲光消去機能領域といった、受光部を除く所定箇所には遮光用金属膜が選択的に成膜されている。   For example, an imaging unit in an ambient light erasing type distance image sensor using a CCD imaging device includes a photoelectric conversion unit (light receiving unit) that constitutes a plurality of pixels and an ambient light erasing function region that serves as a partition for each pixel. It has been. A light-shielding metal film is selectively formed at a predetermined location excluding the light receiving portion, such as the ambient light erasing function region.

しかし、これら遮光用金属膜で反射した近赤外線は、パッケージ封止ガラスやレンズ等といった光学部材で再反射して、当該画素以外の画素の受光部に入射してしまい、各画素における距離情報の取得を阻害することがある。そのため、このような遮光用金属膜上には、所定波長の光の反射を防止するための反射防止膜が設けられている。例えば、特許文献１には、遮光用金属膜上に、窒化チタン（ＴｉＮ）から成る反射防止膜を、その膜厚が２５ｎｍ以上となるように形成した例が記載されている。   However, near-infrared rays reflected by these light-shielding metal films are reflected again by an optical member such as a package sealing glass and a lens, and enter a light-receiving portion of a pixel other than the pixel. May interfere with acquisition. Therefore, an antireflection film for preventing reflection of light having a predetermined wavelength is provided on such a light shielding metal film. For example, Patent Document 1 describes an example in which an antireflection film made of titanium nitride (TiN) is formed on a light-shielding metal film so as to have a film thickness of 25 nm or more.

特開２０００−２９４７５５号公報JP 2000-294755 A

しかしながら、上記特許文献１に記載された反射防止膜は、波長４５０〜５５０ｎｍの入射光に対する相対反射率が５０％以下であるが、長波長側へ向かうほど相対反射率が増加する。すなわち、長波長の光に対する反射防止効果が低下する。しかも、近赤外線領域、特に距離画像センサで頻用される短波長側の近赤外線領域（一般に波長７５０〜１１００ｎｍ）においては、相対反射率が６０％以上であり、距離画素センサ用の反射防止膜としては、その反射防止効果が十分でない。   However, the antireflection film described in Patent Document 1 has a relative reflectance of 50% or less with respect to incident light having a wavelength of 450 to 550 nm, but the relative reflectance increases toward the longer wavelength side. That is, the antireflection effect for long wavelength light is reduced. Moreover, in the near-infrared region, particularly in the near-infrared region on the short wavelength side (generally wavelengths of 750 to 1100 nm) frequently used in distance image sensors, the relative reflectance is 60% or more, and as an antireflection film for a distance pixel sensor. The antireflection effect is not sufficient.

本発明は、上記課題を解決するものであり、距離画素センサ等に用いられる固体撮像素子の遮光用金属膜上に設けられ、所望の波長領域の光に対する反射率を効果的に低下させることができる反射防止膜を提供することを目的とする。   The present invention solves the above-described problems, and is provided on a light-shielding metal film of a solid-state imaging device used for a distance pixel sensor or the like, and can effectively reduce the reflectance with respect to light in a desired wavelength region. An object of the present invention is to provide an antireflection film that can be used.

上記課題を解決するため、請求項１の発明は、固体撮像素子の受光部以外の箇所に選択的に被膜される遮光用金属膜上に設けられる固体撮像素子用の反射防止膜であって、前記遮光用金属膜の上層に設けられる位相反転用絶縁層と、該位相反転用絶縁層の上層に設けられる表層金属層と、該表層金属層の上層に設けられる保護膜層と、を備え、前記位相反転用絶縁層は、その屈折率をｎ、対象波長の波長をλとしたときに、略λ／４ｎとなる膜厚に成膜され、前記表層金属層は、シート抵抗が略１００〜４５０Ω／□となる膜厚に成膜されたものである。   In order to solve the above-mentioned problem, the invention of claim 1 is an antireflection film for a solid-state image sensor provided on a light-shielding metal film that is selectively coated on a portion other than the light receiving portion of the solid-state image sensor, An insulating layer for phase inversion provided on an upper layer of the light shielding metal film, a surface layer metal layer provided on an upper layer of the insulating layer for phase inversion, and a protective film layer provided on an upper layer of the surface metal layer, The insulating layer for phase inversion is formed to a thickness of approximately λ / 4n, where n is the refractive index and λ is the wavelength of the target wavelength, and the surface metal layer has a sheet resistance of approximately 100 to The film was formed to a film thickness of 450Ω / □.

請求項２の発明は、請求項１に記載の固体撮像素子用の反射防止膜において、前記表層金属層が窒化チタン又はチタンを含む材料から成るものである。   According to a second aspect of the present invention, in the antireflection film for a solid-state imaging device according to the first aspect, the surface metal layer is made of titanium nitride or a material containing titanium.

請求項３の発明は、請求項１又は請求項２に記載の固体撮像素子用の反射防止膜において、前記位相反転用絶縁層と前記遮光メタル層との間に、窒化チタンを含む材料から成る層を更に設けたものである。   According to a third aspect of the present invention, in the antireflection film for a solid-state imaging device according to the first or second aspect, the antireflection film for a solid-state imaging device is made of a material containing titanium nitride between the phase inversion insulating layer and the light shielding metal layer. A layer is further provided.

請求項４の発明は、請求項１乃至請求項３のいずれか一項に記載の固体撮像素子用の反射防止膜において、前記保護膜層の上層に、樹脂保護層を更に設けたものである。   According to a fourth aspect of the present invention, in the antireflection film for a solid-state imaging device according to any one of the first to third aspects, a resin protective layer is further provided on the protective film layer. .

請求項１及び請求項２の発明によれば、遮光用金属膜の表面に入射した光の一部を、位相反転用絶縁層の表面と遮光用金属膜の表面との間で、位相反転させながら繰り返し再反射させて消衰させることにより、高い反射防止効果を実現できる。   According to the first and second aspects of the present invention, a part of the light incident on the surface of the light shielding metal film is phase-inverted between the surface of the phase inversion insulating layer and the surface of the light shielding metal film. However, a high antireflection effect can be realized by repeatedly rereflecting and extinguishing.

請求項３の発明によれば、窒化チタンを含む材料から成る内層金属層に入射した光の一部が全反射し、位相反転用絶縁層に戻されるので、上述した再反射の繰り返しによる反射光の消衰効果を更に高めることができる。   According to the third aspect of the present invention, part of the light incident on the inner metal layer made of the material containing titanium nitride is totally reflected and returned to the phase inversion insulating layer. The extinction effect of can be further enhanced.

請求項４の発明によれば、アクリル保護層が設けられることにより、反射防止膜の膜強度が向上する。   According to invention of Claim 4, the film | membrane intensity | strength of an antireflection film improves by providing an acrylic protective layer.

本発明の第１の実施形態に係る固体撮像素子用の反射防止膜の側断面図。1 is a side sectional view of an antireflection film for a solid-state imaging device according to a first embodiment of the present invention. 本発明の第２の実施形態に係る固体撮像素子用の反射防止膜の側断面図。The sectional side view of the anti-reflective film for solid-state image sensors which concerns on the 2nd Embodiment of this invention. 本発明の第３の実施形態に係る固体撮像素子用の反射防止膜の側断面図。The sectional side view of the anti-reflective film for solid-state image sensors which concerns on the 3rd Embodiment of this invention. 従来の反射防止膜の側断面図。The sectional side view of the conventional antireflection film. 本発明の実施例１〜３及び比較例に係る反射防止膜の相対反射率の示す図。The figure which shows the relative reflectance of the anti-reflective film which concerns on Examples 1-3 and the comparative example of this invention.

本発明の第１の実施形態に係る固体撮像素子用の反射防止膜（以下、反射防止膜１という）について、図１を参照して説明する。本実施形態の反射防止膜１は、固体撮像素子の受光部を除く箇所、ここではＳｉＯ２等から成る基材２上に、選択的に被膜される遮光用金属膜３上に設けられるものである。反射防止膜１は、上記遮光用金属膜３の上層に設けられる位相反転用絶縁層４と、この位相反転用絶縁層４の上層に設けられる表層金属層５と、この表層金属層５の上層に設けられる保護膜層６とを備える。 An antireflection film (hereinafter referred to as an antireflection film 1) for a solid-state imaging device according to a first embodiment of the present invention will be described with reference to FIG. The antireflection film 1 of this embodiment is provided on a light shielding metal film 3 that is selectively coated on a base 2 made of SiO 2 or the like, except for a light receiving portion of a solid-state imaging device. is there. The antireflection film 1 includes a phase inversion insulating layer 4 provided on the light shielding metal film 3, a surface metal layer 5 provided on the phase inversion insulating layer 4, and an upper layer of the surface metal layer 5. And a protective film layer 6 provided on the substrate.

遮光用金属膜３には、基材２との接着性が良く、反射率が高い金属材料、例えばアルミニウム（Ａｌ）等が用いられる。   The light shielding metal film 3 is made of a metal material having good adhesion to the base material 2 and having a high reflectance, such as aluminum (Al).

位相反転用絶縁層４は、その屈折率がｎ、対象波長の波長をλであるときに、略λ／４ｎとなる膜厚に成膜され、好ましくは、窒化シリコン（例えばＳｉ３Ｎ４）又は酸化シリコン（例えばＳｉＯ２）等を含む透光性材料から形成されるものである。 The phase inversion insulating layer 4 is formed to a thickness of approximately λ / 4n when the refractive index is n and the wavelength of the target wavelength is λ, preferably silicon nitride (for example, Si 3 N 4 ). Alternatively, it is formed from a light-transmitting material containing silicon oxide (for example, SiO 2 ).

表層金属層５は、シート抵抗が略１００〜４００Ω／□となる膜厚に成膜され、好ましくは、窒化チタン（ＴｉＮ）又はチタン（Ｔｉ）を含む透光性材料から形成される。   The surface metal layer 5 is formed to a film thickness with a sheet resistance of approximately 100 to 400Ω / □, and is preferably formed from a light-transmitting material containing titanium nitride (TiN) or titanium (Ti).

保護膜層６は、成膜時における膜厚制御が可能であり、比較的屈折率が低い透光性材料であれば特に限定されないが、好ましくは、酸化シリコン等を含む透光性材料から形成される。表層金属層５は、光の透過率が確保されるように、位相反転用絶縁層４や遮光用金属膜３に比べて薄く形成されているので、耐久性が低い。そのため、保護膜層６が設けられることにより、物理的又は化学的ダメージから表層金属層５を保護することができる。   The protective film layer 6 is not particularly limited as long as the film thickness can be controlled at the time of film formation and is a light-transmitting material having a relatively low refractive index, but preferably formed from a light-transmitting material containing silicon oxide or the like. Is done. Since the surface metal layer 5 is formed thinner than the phase inversion insulating layer 4 and the light shielding metal film 3 so as to ensure the light transmittance, the durability is low. Therefore, by providing the protective film layer 6, the surface metal layer 5 can be protected from physical or chemical damage.

本実施形態の反射防止膜１においては、位相反転用絶縁層４の上層に表層金属層５が設けられるので、遮光用金属膜３の表面で反射されて、位相反転用絶縁層４の表面（位相反転用絶縁層４と表層金属層５との界面）に入射した光の一部は、この界面で全反射し、遮光用金属膜３の表面に再入射する。すなわち、遮光用金属膜３の表面に入射した光の一部は、位相反転用絶縁層４の表面と遮光用金属膜３の表面との間で、位相反転しながら反射を繰り返す。このようにして、本実施形態の反射防止膜１は、位相反転用絶縁層４内で光を導波させて、これを消衰させることにより、反射防止効果を実現する。   In the antireflection film 1 of the present embodiment, since the surface metal layer 5 is provided on the phase inversion insulating layer 4, the surface metal layer 5 is reflected on the surface of the light shielding metal film 3, and the surface of the phase inversion insulating layer 4 ( Part of the light incident on the phase inversion insulating layer 4 and the surface metal layer 5 is totally reflected at the interface and reenters the surface of the light shielding metal film 3. That is, part of the light incident on the surface of the light shielding metal film 3 is repeatedly reflected while the phase is inverted between the surface of the phase inversion insulating layer 4 and the surface of the light shielding metal film 3. In this way, the antireflection film 1 of the present embodiment realizes an antireflection effect by guiding light in the phase inversion insulating layer 4 and extinguishing it.

また、上述したように、位相反転用絶縁層４は、略λ／４ｎとなる膜厚に成膜されている。そのため、遮光用金属膜３の表面（位相反転用絶縁層４と遮光用金属膜３との界面）に入射した光は、位相反転用絶縁層４の表面（表層金属層５と位相反転用絶縁層４との界面）で反射した光に対して、位相が反転された状態で反射する。こうして、遮光用金属膜３の表面及び位相反転用絶縁層４の夫々の表面で反射した光が打ち消しあうことにより、一般の反射防止膜と同様の反射防止効果が実現される。すなわち、上述したように、位相反転用絶縁層４内で光を消衰させると共に、位相反転された光の打ち消しにより、より効果的な反射防止効果が得られる。   Further, as described above, the phase inversion insulating layer 4 is formed to a thickness of approximately λ / 4n. Therefore, the light incident on the surface of the light shielding metal film 3 (interface between the phase inversion insulating layer 4 and the light shielding metal film 3) is incident on the surface of the phase inversion insulating layer 4 (the surface metal layer 5 and the phase inversion insulation). The light reflected at the interface with the layer 4 is reflected with its phase reversed. In this way, the light reflected on the surface of the light shielding metal film 3 and the surface of the phase inversion insulating layer 4 cancels each other, thereby realizing the same antireflection effect as that of a general antireflection film. That is, as described above, a more effective antireflection effect can be obtained by extinguishing light in the phase inversion insulating layer 4 and canceling out the phase inverted light.

次に、本発明の第２の実施形態に係る反射防止膜について、図２を参照して説明する。本実施形態の反射防止膜１は、上述した第１の実施形態の反射防止膜１において、位相反転用絶縁層４と遮光金属膜３との間に、窒化チタンを含む材料から成る内層金属層７が更に設けられたものである。この内層金属層７の膜厚は、２５ｎｍ以下であることが望ましい。この構成によれば、内層金属層７に入射した光の一部が全反射し、位相反転用絶縁層４に戻される。そのため、上述した再反射の繰り返しによる反射光の消衰効果を更に高めることができる。   Next, an antireflection film according to a second embodiment of the present invention will be described with reference to FIG. The antireflection film 1 of the present embodiment is an inner metal layer made of a material containing titanium nitride between the phase inversion insulating layer 4 and the light shielding metal film 3 in the antireflection film 1 of the first embodiment described above. 7 is further provided. The film thickness of the inner metal layer 7 is desirably 25 nm or less. According to this configuration, a part of the light incident on the inner metal layer 7 is totally reflected and returned to the phase inversion insulating layer 4. Therefore, it is possible to further enhance the extinction effect of the reflected light due to the repeated re-reflection described above.

次に、本発明の第３の実施形態に係る反射防止膜について、図３を参照して説明する。本実施形態の反射防止膜１は、上述した第２の実施形態の反射防止膜１において、保護膜層６の上層に、樹脂保護層８が更に設けられたものである。樹脂保護層８としては、例えば、マイクロレンズ用のアクリル膜等が用いられる。この樹脂保護層８が設けられることにより、反射防止膜１の膜強度が向上する。なお、樹脂保護層８を構成する樹脂材料中に、例えば、染料等を添加して反射防止膜１に着色性を持たせてもよいし、紫外線吸収剤等を添加して、基材２等の外光による劣化を抑制できるようにしてもよい。   Next, an antireflection film according to a third embodiment of the present invention will be described with reference to FIG. The antireflection film 1 of this embodiment is obtained by further providing a resin protective layer 8 above the protective film layer 6 in the antireflection film 1 of the second embodiment described above. As the resin protective layer 8, for example, an acrylic film for microlenses or the like is used. By providing the resin protective layer 8, the film strength of the antireflection film 1 is improved. In addition, for example, a dye or the like may be added to the resin material constituting the resin protective layer 8 to give the antireflection film 1 a coloring property, or an ultraviolet absorber or the like may be added to the base material 2 or the like. You may enable it to suppress degradation by external light.

以下、上述した第１〜第３の実施形態の夫々に対応する実施例１〜３について、比較例と対比して説明する。なお、これら実施例１〜３及び比較例は、近赤外領域にある波長８７０ｎｍの光を反射防止の対象とする。   Hereinafter, Examples 1 to 3 corresponding to the first to third embodiments described above will be described in comparison with a comparative example. In addition, these Examples 1-3 and a comparative example make the light of wavelength 870nm in a near infrared region the object of antireflection.

（実施例１）
実施例１に係る反射防止膜１は、二酸化ケイ素（ＳｉＯ２）等から成る基材２上に膜厚１μｍのアルミニウムから成る遮光用金属膜３を形成しておき、この遮光用金属膜３上に形成される。より具体的には、この反射防止膜１は、位相反転用絶縁層４として膜厚１１０ｎｍの窒化シリコン（ＳｉＮ）から成る層（屈折率ｎ＝２．０）と、表層金属層５として膜厚１０ｎｍ（シート抵抗２００Ω／□に相当する）の窒化チタン（ＴｉＮ）から成る層と、保護膜層６として膜厚４００ｎｍの酸化シリコン（ＳｉＯ２）から成る層とが遮光用金属膜３上に積層されたものである。 Example 1
The antireflection film 1 according to Example 1 is formed by forming a light-shielding metal film 3 made of aluminum having a thickness of 1 μm on a base material 2 made of silicon dioxide (SiO 2 ) or the like. Formed. More specifically, the antireflection film 1 includes a layer made of silicon nitride (SiN) with a film thickness of 110 nm (refractive index n = 2.0) as the phase inversion insulating layer 4 and a film thickness as the surface metal layer 5. A layer made of titanium nitride (TiN) having a thickness of 10 nm (corresponding to a sheet resistance of 200Ω / □) and a layer made of silicon oxide (SiO 2 ) having a thickness of 400 nm are laminated on the light shielding metal film 3 as the protective film layer 6. It has been done.

（実施例２）
実施例２に係る反射防止膜１は、位相反転用絶縁層４と遮光金属膜３との間に、内層金属層７として、膜厚１５ｎｍのＴｉＮを設けた点が上記実施例１と異なる。 (Example 2)
The antireflection film 1 according to Example 2 is different from Example 1 in that TiN having a film thickness of 15 nm is provided as an inner metal layer 7 between the phase inversion insulating layer 4 and the light shielding metal film 3.

（実施例３）
実施例２に係る反射防止膜１は、保護膜層６上に、樹脂保護層８として、マイクロレンズ用樹脂膜を３μｍ形成した点が上記実施例２と異なる。 (Example 3)
The antireflection film 1 according to Example 2 differs from Example 2 in that a 3 μm microlens resin film is formed on the protective film layer 6 as the resin protective layer 8.

（比較例）
比較例に係る反射防止膜１０１の構成を図４に示す。反射防止膜１０１は、位相反転用絶縁層４が設けられておらず、表層金属層１０５として膜厚１００ｎｍの窒化チタン（ＴｉＮ）から成る層と、保護膜層１０６として膜厚４００ｎｍの酸化シリコン（ＳｉＯ２）から成る層と、樹脂保護層１０８として膜厚３μｍの樹脂膜とが遮光用金属層３上に積層されたものである。他の構成は、実施例１と同様である。 (Comparative example)
The configuration of the antireflection film 101 according to the comparative example is shown in FIG. The antireflection film 101 is not provided with the phase inversion insulating layer 4. The surface metal layer 105 is made of titanium nitride (TiN) having a thickness of 100 nm, and the protective film layer 106 is silicon oxide having a thickness of 400 nm ( A layer made of SiO 2 ) and a resin film having a thickness of 3 μm as the resin protective layer 108 are laminated on the light shielding metal layer 3. Other configurations are the same as those of the first embodiment.

図５は、上述した実施例１〜３及び比較例における相対反射率のスペクトルを示す。これら相対反射率は、表層金属層１０５の膜厚が１５ｎｍである例（従来構造の反射防止膜（図４参照））の反射率を１００％とした場合の相対反射率を示す。比較例に係る反射防止膜は、波長９００ｎｍの光における相対反射率が約７０％であった。すなわち、特許文献１（特開２０００−２９４７５５号公報）に示されるような、遮光金属膜上に形成される表層金属層（ＴｉＮ）の膜厚を２５ｎｍ以上にした場合であっても、波長９００ｎｍの光に対する反射防止効率はあまり向上しないことが示された。これに対して、実施例１に係る反射防止膜は、波長９００ｎｍの光における相対反射率が約８％であり、比較例に比べて反射防止効率が大幅に向上した。   FIG. 5 shows the spectrum of relative reflectance in Examples 1 to 3 and the comparative example described above. These relative reflectivities indicate relative reflectivities when the reflectivity of an example in which the thickness of the surface metal layer 105 is 15 nm (conventional antireflection film (see FIG. 4)) is 100%. The antireflection film according to the comparative example had a relative reflectance of about 70% with respect to light having a wavelength of 900 nm. That is, even when the thickness of the surface metal layer (TiN) formed on the light-shielding metal film is 25 nm or more as shown in Patent Document 1 (Japanese Patent Laid-Open No. 2000-294755), the wavelength is 900 nm. It has been shown that the antireflection efficiency for light does not improve much. On the other hand, the antireflection film according to Example 1 had a relative reflectance of about 8% in light with a wavelength of 900 nm, and the antireflection efficiency was significantly improved as compared with the comparative example.

また、実施例２に係る反射防止膜１は、波長９００ｎｍの光における相対反射率は約６％であり、比較例に対して反射防止効率が向上した。この実施例２は、実施例１に比べて、波長略９００ｎｍ以上の相対的に長波長側の光の反射防止効果に優れていた。   Further, the antireflection film 1 according to Example 2 has a relative reflectance of about 6% in light with a wavelength of 900 nm, and the antireflection efficiency is improved as compared with the comparative example. Example 2 was superior to Example 1 in the antireflection effect of light on the relatively long wavelength side having a wavelength of about 900 nm or more.

実施例３に係る反射防止膜１は、波長９００ｎｍの光における相対反射率は約８％であり、比較例に対して反射防止効率が向上した。この実施例３は、波長によって相対反射率がやや低くなる領域と、やや高くなる領域とがあり、その反射防止特性として波長依存性を有するものの、概して実施例１，２と同等の反射防止効果を有するものであった。   The antireflection film 1 according to Example 3 has a relative reflectance of about 8% in light with a wavelength of 900 nm, and the antireflection efficiency is improved as compared with the comparative example. The third embodiment has a region where the relative reflectance is slightly lowered depending on the wavelength, and a region where the relative reflectance is slightly high. Although the reflection preventing property has wavelength dependence, the antireflection effect generally equivalent to that of the first and second embodiments is provided. It was what had.

上記実施例１〜３は、いずれも波長９００ｎｍの光における相対反射率が１０％以下であり、比較例に比べて優れた反射防止効果を示した。また、波長７５０ｎ〜１１００ｎｍの光に対しても優れた反射防止効果を示した。これらの結果は、近赤外線を用いて距離情報を取得する固体撮像素子にとって、好適な反射防止膜を実現するものである。ただし、上述した反射防止膜１は、固体撮像素子以外の用途に対しても当然に適用し得るものである。なお、本発明は、位相反転用絶縁層４の表面と遮光用金属膜３の表面との間で、再反射を繰り返させてこれを消衰させるよう構成されたものであれば、必ずしも上述の実施形態に示す構成に限られるものではない。   In each of Examples 1 to 3, the relative reflectance in light having a wavelength of 900 nm was 10% or less, and an antireflection effect superior to that of the comparative example was exhibited. Moreover, the antireflection effect which was excellent also with respect to the light of wavelength 750n-1100nm was shown. These results realize an antireflection film suitable for a solid-state imaging device that acquires distance information using near infrared rays. However, the above-described antireflection film 1 can naturally be applied to uses other than the solid-state imaging device. Note that the present invention is not necessarily limited to the above-described one as long as it is configured to repeat re-reflection between the surface of the phase-reversal insulating layer 4 and the surface of the light-shielding metal film 3 and extinguish it. The configuration is not limited to that shown in the embodiment.

１ 反射防止膜
２ 基材
３ 遮光用金属膜
４ 位相反転用絶縁層
５ 表層金属層
６ 保護膜層
７ 内層金属層
８ 樹脂保護層 DESCRIPTION OF SYMBOLS 1 Antireflection film 2 Base material 3 Metal film for light shielding 4 Insulating layer for phase inversion 5 Surface metal layer 6 Protective film layer 7 Inner metal layer 8 Resin protective layer

Claims (4)

固体撮像素子の受光部以外の箇所に選択的に被膜される遮光用金属膜上に設けられる固体撮像素子用の反射防止膜であって、
前記遮光用金属膜の上層に設けられる位相反転用絶縁層と、該位相反転用絶縁層の上層に設けられる表層金属層と、該表層金属層の上層に設けられる保護膜層と、を備え、
前記位相反転用絶縁層は、その屈折率をｎ、対象波長の波長をλとしたときに、略λ／４ｎとなる膜厚に成膜され、
前記表層金属層は、シート抵抗が略１００〜４５０Ω／□となる膜厚に成膜されたことを特徴とする固体撮像素子用の反射防止膜。 An antireflection film for a solid-state image sensor provided on a light-shielding metal film that is selectively coated on a portion other than the light receiving portion of the solid-state image sensor,
An insulating layer for phase inversion provided on an upper layer of the light shielding metal film, a surface metal layer provided on an upper layer of the insulating layer for phase inversion, and a protective film layer provided on an upper layer of the surface metal layer,
The insulating layer for phase inversion is formed to a film thickness of approximately λ / 4n, where n is the refractive index and λ is the wavelength of the target wavelength.
The antireflection film for a solid-state imaging device, wherein the surface metal layer is formed to a film thickness with a sheet resistance of about 100 to 450 Ω / □. 前記表層金属層がチタン及び窒化チタン又はチタンを含む材料から成ることを特徴とする請求項１に記載の固体撮像素子用の反射防止膜。   The antireflection film for a solid-state imaging device according to claim 1, wherein the surface metal layer is made of titanium and titanium nitride or a material containing titanium. 前記位相反転用絶縁層と前記遮光メタル層との間に、窒化チタンを含む材料から成る層を更に設けたことを特徴とする請求項１又は請求項２に記載の固体撮像素子用の反射防止膜。   The antireflection for a solid-state imaging device according to claim 1, further comprising a layer made of a material containing titanium nitride between the phase inversion insulating layer and the light shielding metal layer. film. 前記保護膜層の上層に、樹脂保護層を更に設けたことを特徴とする請求項１乃至請求項３のいずれか一項に記載の固体撮像素子用の反射防止膜。   The antireflection film for a solid-state imaging device according to any one of claims 1 to 3, wherein a resin protective layer is further provided on the protective film layer.
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