JP2011526079A - 半導体光変換構成体 - Google Patents

半導体光変換構成体 Download PDF

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Publication number
JP2011526079A
JP2011526079A JP2011516415A JP2011516415A JP2011526079A JP 2011526079 A JP2011526079 A JP 2011526079A JP 2011516415 A JP2011516415 A JP 2011516415A JP 2011516415 A JP2011516415 A JP 2011516415A JP 2011526079 A JP2011526079 A JP 2011526079A
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JP
Japan
Prior art keywords
light
semiconductor
layer
refractive index
structured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011516415A
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English (en)
Japanese (ja)
Inventor
チャン，ジュン−イン
エル． スミス，テリー
エー． ハーゼ，マイケル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2011526079A publication Critical patent/JP2011526079A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
JP2011516415A 2008-06-26 2009-06-10 半導体光変換構成体 Pending JP2011526079A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7590408P 2008-06-26 2008-06-26
US61/075,904 2008-06-26
PCT/US2009/046835 WO2009158191A2 (fr) 2008-06-26 2009-06-10 Construction de conversion de lumière à semi-conducteur

Publications (1)

Publication Number Publication Date
JP2011526079A true JP2011526079A (ja) 2011-09-29

Family

ID=41445203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011516415A Pending JP2011526079A (ja) 2008-06-26 2009-06-10 半導体光変換構成体

Country Status (5)

Country Link
EP (1) EP2308104A4 (fr)
JP (1) JP2011526079A (fr)
KR (1) KR20110031953A (fr)
CN (1) CN102124583B (fr)
WO (1) WO2009158191A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013157310A1 (fr) * 2012-04-17 2013-10-24 シャープ株式会社 Dispositif électroluminescent et son procédé de fabrication

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8324000B2 (en) 2008-06-26 2012-12-04 3M Innovative Properties Company Method of fabricating light extractor
EP2308101A4 (fr) 2008-06-26 2014-04-30 3M Innovative Properties Co Montage de conversion d'une lumière à semi-conducteur
EP2308103A4 (fr) 2008-06-26 2014-04-30 3M Innovative Properties Co Construction de conversion de lumière
JP2012514335A (ja) 2008-12-24 2012-06-21 スリーエム イノベイティブ プロパティズ カンパニー 両方の側の波長変換器及びそれを使用する光生成デバイスの作製方法
CN102318089A (zh) 2008-12-24 2012-01-11 3M创新有限公司 具有双面波长转换器的光产生装置
CN102460741A (zh) 2009-05-05 2012-05-16 3M创新有限公司 具有增大的提取效率的再发光半导体构造
JP2012526391A (ja) 2009-05-05 2012-10-25 スリーエム イノベイティブ プロパティズ カンパニー インジウム空乏機構を利用してインジウム含有基板上で成長した半導体素子
KR20120015337A (ko) 2009-05-05 2012-02-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Ｌｅｄ에서 사용하기 위한 재방출 반도체 캐리어 디바이스 및 제조 방법
WO2011008476A1 (fr) 2009-06-30 2011-01-20 3M Innovative Properties Company Construction de semi-conducteurs à réémission sans cadmium
EP2449608A1 (fr) 2009-06-30 2012-05-09 3M Innovative Properties Company Dispositifs électroluminescents à ajustement de couleur basé sur une concentration de courant
EP2449856A1 (fr) 2009-06-30 2012-05-09 3M Innovative Properties Company Dispositifs électroluminescents à lumière blanche avec température de couleur ajustable
CN110456528A (zh) * 2019-08-06 2019-11-15 桂林电子科技大学 一种双波导耦合式的等离子电光调制器
US11362243B2 (en) * 2019-10-09 2022-06-14 Lumileds Llc Optical coupling layer to improve output flux in LEDs

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6580740B2 (en) * 2001-07-18 2003-06-17 The Furukawa Electric Co., Ltd. Semiconductor laser device having selective absorption qualities
US7016384B2 (en) * 2002-03-14 2006-03-21 Fuji Photo Film Co., Ltd. Second-harmonic generation device using semiconductor laser element having quantum-well active layer in which resonator length and mirror loss are arranged to increase width of gain peak
CN100337337C (zh) * 2003-07-18 2007-09-12 财团法人工业技术研究院 全方向反射镜及由其制造的发光装置
JP4093943B2 (ja) * 2003-09-30 2008-06-04 三洋電機株式会社 発光素子およびその製造方法
TWI276232B (en) * 2004-08-20 2007-03-11 Arima Optoelectronics Corp Light emitting diode with diffraction lattice
JP4959127B2 (ja) * 2004-10-29 2012-06-20 三菱重工業株式会社 光電変換装置及び光電変換装置用基板
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7602118B2 (en) * 2005-02-24 2009-10-13 Eastman Kodak Company OLED device having improved light output
JP2007005173A (ja) * 2005-06-24 2007-01-11 Toshiba Matsushita Display Technology Co Ltd 表示装置
KR20070011041A (ko) * 2005-07-19 2007-01-24 주식회사 엘지화학 광추출 효율을 높인 발광다이오드 소자 및 이의 제조방법
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
US20100295075A1 (en) * 2007-12-10 2010-11-25 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013157310A1 (fr) * 2012-04-17 2013-10-24 シャープ株式会社 Dispositif électroluminescent et son procédé de fabrication

Also Published As

Publication number Publication date
CN102124583A (zh) 2011-07-13
KR20110031953A (ko) 2011-03-29
WO2009158191A2 (fr) 2009-12-30
CN102124583B (zh) 2013-06-19
EP2308104A2 (fr) 2011-04-13
WO2009158191A3 (fr) 2010-03-25
EP2308104A4 (fr) 2014-04-30

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