JP2015141994A - 支持機構及び基板処理装置 - Google Patents
支持機構及び基板処理装置 Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
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- F27B17/0016—Chamber type furnaces
- F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
- H10P72/3206—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
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- H—ELECTRICITY
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- H10P72/3218—Conveying cassettes, containers or carriers
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
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Abstract
【解決手段】 昇降手段を用いた昇降により熱処理炉の炉口の封止又は前記封止の解除を行う蓋体を支持する支持機構であって、前記支持機構は、第1の弾性係数を有する第1の弾性体と、前記第1の弾性係数よりも弾性係数が大きい第2の弾性係数を有する第2の弾性体と、を有し、前記前記蓋体は、前記昇降手段によって上昇した前記蓋体が前記炉口に当接する際に、前記第1の弾性体に係る反力が印加され、前記昇降手段によって上昇した前記蓋体が前記炉口に当接した後に、前記第1の弾性体及び前記第2の弾性体に係る反力が印加される、支持機構。
【選択図】図1
Description
第1の弾性係数を有する第1の弾性体と、
前記第1の弾性係数よりも弾性係数が大きい第2の弾性係数を有する第2の弾性体と、
を有し、
前記蓋体は、前記昇降手段によって上昇した前記蓋体が前記炉口に当接する際に、前記第1の弾性体に係る反力が印加され、前記昇降手段によって上昇した前記蓋体が前記炉口に当接した後に、前記第1の弾性体及び前記第2の弾性体に係る反力が印加される、支持機構。
図1に、本実施形態に係る基板処理装置の一例の概略縦断面図を示す。なお、図1においては、説明のために、X軸方向を前後方向の前方向とし、z軸方向を上下方向(又は昇降方向)の上方向として、説明する。また、図2に、本実施形態に係る熱処理炉の一例の概略構成図を示す。
次に、本実施形態に係る蓋体43及び支持機構50近傍の実施形態例について、図を参照して説明する。
先ず、従来の支持機構450を用いた、蓋体による炉口の封止の問題点について、図3(a)〜図3(c)を参照して説明する。図3(a)〜図3(c)に、従来の支持機構450近傍の概略構成図を示す。図3(a)は、昇降機構48による蓋体43の上昇において、蓋体43がキャップ部86に当接する前の概略図であり、図3(b)は、蓋体43がキャップ部86に当接した直後の概略図であり、図3(c)は、蓋体43が炉口68を十分に封止した状態の概略図である。
昇降手段を用いた昇降により熱処理炉の炉口の封止又は前記封止の解除を行う蓋体を支持する支持機構であって、前記支持機構は、
第1の弾性係数を有する第1の弾性体と、
前記第1の弾性係数よりも弾性係数が大きい第2の弾性係数を有する第2の弾性体と、
を有し、
前記蓋体は、前記昇降手段によって上昇した前記蓋体が前記炉口に当接する際に、前記第1の弾性体に係る反力が印加され、前記昇降手段によって上昇した前記蓋体が前記炉口に当接した後に、前記第1の弾性体及び前記第2の弾性体に係る反力が印加される。
第1の実施形態に係る支持機構50aの構成例及び効果について、図4及び図5を参照して説明する。図4に、第1の実施形態に係る支持機構近傍の概略構成図を示す。
蓋体43に対して下方に離間して設けられ、前記昇降機構の昇降に対応して昇降可能な第1の支持部材202と、
一方の端部が前記蓋体43に接し、他方の端部が前記第1の支持部材202の前記蓋体43に対向する第1の面202aに接する、第1の弾性係数を有する第1の弾性体204と、
一方の端部が前記第1の支持部材202の第1の面202aに接し、前記第1の弾性係数よりも弾性係数が大きい第2の弾性係数を有する第2の弾性体206と、
を有する。
次に、第2の実施形態に係る支持機構50bについて、図6(a)〜図6(d)を参照して説明する。図6(a)〜図6(d)に、第2の実施形態に係る支持機構50bの効果の一例を説明するための概略図を示す。なお、図6(a)〜図6(d)においては、支持機構50bにおける必須の構成以外の構成要素については、省略して示している。
蓋体43に対して下方に離間して設けられ、前記昇降機構48の昇降に対応して昇降可能な第2の支持部材302と、
前記第2の支持部材302に対して下方に離間して設けられ、前記昇降機構48の昇降に対応して昇降可能な第3の支持部材304と、
前記第2の支持部材302と前記第3の支持部材304との間に設けられる基部306aと、前記基部306aと前記蓋体43との間の距離が所定の距離となるように前記基部306aと前記蓋体43とを接続する接続部306bとを有する、第4の支持部材306と、
一方の端部が前記蓋体43に接し、他方の端部が前記第2の支持部材302の前記蓋体に対向する第2の面302aに接する、第3の弾性係数を有する第3の弾性体308a、bと、
一方の端部が前記第3の支持部材304の前記基部306aと対向する第3の面304aに接し、前記第3の弾性係数よりも弾性係数が大きい第4の弾性係数を有する第4の弾性体310と、
を有する。
20 載置台
30 筐体
31 ベースプレート
40 ローディングエリア
43 蓋体
44 ウエハボート
47 移載機構
48 昇降機構
48 搬送機構
49 保温筒
50 支持機構
58 昇降アーム
60 熱処理炉
65 処理容器
68 炉口
70 ヒータ装置
84 マニホールド
86 キャップ部
88 シール部材
90 軸
92 テーブル
94 シール部材
120 制御部
202 第1の支持部材
204 第1の弾性体
206 第2の弾性体
208 軸
210 ブッシュガイド
302 第2の支持部材
304 第3の支持部材
306 第4の支持部材
308 第3の弾性体
310 第4の弾性体
Claims (6)
- 昇降手段を用いた昇降により熱処理炉の炉口の封止又は前記封止の解除を行う蓋体を支持する支持機構であって、前記支持機構は、
第1の弾性係数を有する第1の弾性体と、
前記第1の弾性係数よりも弾性係数が大きい第2の弾性係数を有する第2の弾性体と、
を有し、
前記蓋体は、前記昇降手段によって上昇した前記蓋体が前記炉口に当接する際に、前記第1の弾性体に係る反力が印加され、前記昇降手段によって上昇した前記蓋体が前記炉口に当接した後に、前記第1の弾性体及び前記第2の弾性体に係る反力が印加される、支持機構。 - 前記蓋体に対して下方に離間して設けられ、前記昇降手段の昇降に対応して昇降可能な第1の支持部材を更に有し、
前記第1の弾性体は、一方の端部が前記蓋体に接し、他方の端部が前記第1の支持部材の前記蓋体に対向する第1の面に接し、
前記第2の弾性体は、一方の端部が前記第1の支持部材の第1の面に接する、
請求項1に記載の支持機構。 - 前記蓋体に対して下方に離間して設けられ、前記昇降手段の昇降に対応して昇降可能な第2の支持部材と、
前記第2の支持部材に対して下方に離間して設けられ、前記昇降手段の昇降に対応して昇降可能な第3の支持部材と、
前記第2の支持部材と前記第3の支持部材との間に設けられる基部と、前記基部と前記蓋体との間の距離が所定の距離となるように前記基部と前記蓋体とを接続する接続部と、を有する第4の支持部材と、
を更に有し、
前記第1の弾性体は、一方の端部が前記蓋体に接し、他方の端部が前記第2の支持部材の前記蓋体に対向する第2の面に接し、
前記第2の弾性体は、一方の端部が前記第3の支持部材の前記基部と対向する第3の面に接する、
請求項1に記載の支持機構。 - 前記第1の弾性係数は、35〜400kgf/cm2の範囲内であり、
前記第2の弾性係数は、100〜1500kgf/cm2の範囲内である、
請求項1乃至3のいずれか一項に記載の支持機構。 - 前記第1の弾性係数の前記第2の弾性係数に対する比の値は、2〜20の範囲内である、
請求項1乃至3のいずれか一項に記載の支持機構。 - 熱処理炉と、
前記熱処理炉の炉口の封止又は前記封止の解除を行う蓋体と、
前記蓋体を支持する支持機構と
前記支持機構を介して前記蓋体を昇降する昇降手段と、
を有し、
前記支持機構は、
第1の弾性係数を有する第1の弾性体と、
前記第1の弾性係数よりも弾性係数が大きい第2の弾性係数を有する第2の弾性体と、
を有し、
前記蓋体は、前記昇降手段によって上昇した前記蓋体が前記炉口に当接する際に、前記第1の弾性体に係る反力が印加され、前記昇降手段によって上昇した前記蓋体が前記炉口に当接した後に、前記第1の弾性体及び前記第2の弾性体に係る反力が印加される、支持機構と、
を有する基板処理装置。
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| JP2014013738A JP6208588B2 (ja) | 2014-01-28 | 2014-01-28 | 支持機構及び基板処理装置 |
| TW104102445A TWI598984B (zh) | 2014-01-28 | 2015-01-26 | 支持機構及基板處理裝置 |
| US14/604,866 US9803926B2 (en) | 2014-01-28 | 2015-01-26 | Support mechanism and substrate processing apparatus |
| KR1020150012998A KR101874673B1 (ko) | 2014-01-28 | 2015-01-27 | 지지 기구 및 기판 처리 장치 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
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| US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| KR102695659B1 (ko) | 2018-01-19 | 2024-08-14 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법 |
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| US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
| US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
| KR102600229B1 (ko) | 2018-04-09 | 2023-11-10 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법 |
| US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
| US12272527B2 (en) | 2018-05-09 | 2025-04-08 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
| KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
| US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| CN120591748A (zh) | 2018-06-27 | 2025-09-05 | Asm Ip私人控股有限公司 | 用于形成含金属的材料的循环沉积方法及膜和结构 |
| US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102707956B1 (ko) | 2018-09-11 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
| CN110970344B (zh) | 2018-10-01 | 2024-10-25 | Asmip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
| KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
| KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
| US12378665B2 (en) | 2018-10-26 | 2025-08-05 | Asm Ip Holding B.V. | High temperature coatings for a preclean and etch apparatus and related methods |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| KR102748291B1 (ko) | 2018-11-02 | 2024-12-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| JP7504584B2 (ja) | 2018-12-14 | 2024-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
| TWI866480B (zh) | 2019-01-17 | 2024-12-11 | 荷蘭商Asm Ip 私人控股有限公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
| TWI873122B (zh) | 2019-02-20 | 2025-02-21 | 荷蘭商Asm Ip私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
| US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
| CN113261080B (zh) * | 2019-02-20 | 2024-11-26 | 株式会社国际电气 | 基板处理装置、炉口封闭单元及半导体器件的制造方法 |
| JP7509548B2 (ja) | 2019-02-20 | 2024-07-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
| TWI842826B (zh) | 2019-02-22 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
| KR102858005B1 (ko) | 2019-03-08 | 2025-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| KR20200116033A (ko) * | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
| KR102809999B1 (ko) | 2019-04-01 | 2025-05-19 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
| US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
| KR102929471B1 (ko) | 2019-05-07 | 2026-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
| KR102929472B1 (ko) | 2019-05-10 | 2026-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
| JP7612342B2 (ja) | 2019-05-16 | 2025-01-14 | エーエスエム・アイピー・ホールディング・ベー・フェー | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| JP7598201B2 (ja) | 2019-05-16 | 2024-12-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
| KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
| KR102918757B1 (ko) | 2019-06-10 | 2026-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 석영 에피택셜 챔버를 세정하는 방법 |
| KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
| KR102911421B1 (ko) | 2019-07-03 | 2026-01-12 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
| JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
| CN112216646B (zh) | 2019-07-10 | 2026-02-10 | Asmip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
| KR102895115B1 (ko) | 2019-07-16 | 2025-12-03 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| TWI826704B (zh) | 2019-07-17 | 2023-12-21 | 荷蘭商Asm Ip私人控股有限公司 | 自由基輔助引燃電漿系統和方法 |
| KR102860110B1 (ko) | 2019-07-17 | 2025-09-16 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| KR102903090B1 (ko) | 2019-07-19 | 2025-12-19 | 에이에스엠 아이피 홀딩 비.브이. | 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법 |
| CN112309843B (zh) | 2019-07-29 | 2026-01-23 | Asmip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
| CN112309900B (zh) | 2019-07-30 | 2025-11-04 | Asmip私人控股有限公司 | 基板处理设备 |
| CN112309899B (zh) | 2019-07-30 | 2025-11-14 | Asmip私人控股有限公司 | 基板处理设备 |
| US12169361B2 (en) | 2019-07-30 | 2024-12-17 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
| KR20210018761A (ko) | 2019-08-09 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 장치를 포함한 히터 어셈블리 및 이를 사용하는 방법 |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| JP7810514B2 (ja) | 2019-08-21 | 2026-02-03 | エーエスエム・アイピー・ホールディング・ベー・フェー | 成膜原料混合ガス生成装置及び成膜装置 |
| KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
| USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
| KR102928101B1 (ko) | 2019-08-23 | 2026-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| KR102868968B1 (ko) | 2019-09-03 | 2025-10-10 | 에이에스엠 아이피 홀딩 비.브이. | 칼코지나이드 막 및 상기 막을 포함한 구조체를 증착하기 위한 방법 및 장치 |
| KR102806450B1 (ko) | 2019-09-04 | 2025-05-12 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
| KR102733104B1 (ko) | 2019-09-05 | 2024-11-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US12469693B2 (en) | 2019-09-17 | 2025-11-11 | Asm Ip Holding B.V. | Method of forming a carbon-containing layer and structure including the layer |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
| TW202128273A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體注入系統、及將材料沉積於反應室內之基板表面上的方法 |
| KR102948143B1 (ko) | 2019-10-08 | 2026-04-07 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
| TWI846953B (zh) | 2019-10-08 | 2024-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理裝置 |
| TWI846966B (zh) | 2019-10-10 | 2024-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成光阻底層之方法及包括光阻底層之結構 |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| KR102845724B1 (ko) | 2019-10-21 | 2025-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
| KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| JP7339853B2 (ja) * | 2019-10-31 | 2023-09-06 | 株式会社ジェイテクトサーモシステム | 熱処理装置 |
| KR102890638B1 (ko) | 2019-11-05 | 2025-11-25 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| KR102861314B1 (ko) | 2019-11-20 | 2025-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
| US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| CN112951697B (zh) | 2019-11-26 | 2025-07-29 | Asmip私人控股有限公司 | 基板处理设备 |
| CN112885692B (zh) | 2019-11-29 | 2025-08-15 | Asmip私人控股有限公司 | 基板处理设备 |
| CN120432376A (zh) | 2019-11-29 | 2025-08-05 | Asm Ip私人控股有限公司 | 基板处理设备 |
| JP7527928B2 (ja) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板処理装置、基板処理方法 |
| KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
| US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| TWI887322B (zh) | 2020-01-06 | 2025-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 反應器系統、抬升銷、及處理方法 |
| KR20210089077A (ko) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 가스 공급 어셈블리, 이의 구성 요소, 및 이를 포함하는 반응기 시스템 |
| US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| KR102882467B1 (ko) | 2020-01-16 | 2025-11-05 | 에이에스엠 아이피 홀딩 비.브이. | 고 종횡비 피처를 형성하는 방법 |
| KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
| TWI889744B (zh) | 2020-01-29 | 2025-07-11 | 荷蘭商Asm Ip私人控股有限公司 | 污染物捕集系統、及擋板堆疊 |
| TW202513845A (zh) | 2020-02-03 | 2025-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 半導體裝置結構及其形成方法 |
| TWI908758B (zh) | 2020-02-04 | 2025-12-21 | 荷蘭商Asm Ip私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| KR20210103953A (ko) | 2020-02-13 | 2021-08-24 | 에이에스엠 아이피 홀딩 비.브이. | 가스 분배 어셈블리 및 이를 사용하는 방법 |
| KR102916725B1 (ko) | 2020-02-13 | 2026-01-23 | 에이에스엠 아이피 홀딩 비.브이. | 수광 장치를 포함하는 기판 처리 장치 및 수광 장치의 교정 방법 |
| US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
| TWI895326B (zh) | 2020-02-28 | 2025-09-01 | 荷蘭商Asm Ip私人控股有限公司 | 專用於零件清潔的系統 |
| KR102943116B1 (ko) | 2020-03-04 | 2026-03-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 정렬 고정구 |
| KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
| US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
| CN113394086A (zh) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | 用于制造具有目标拓扑轮廓的层结构的方法 |
| US12173404B2 (en) | 2020-03-17 | 2024-12-24 | Asm Ip Holding B.V. | Method of depositing epitaxial material, structure formed using the method, and system for performing the method |
| KR102755229B1 (ko) | 2020-04-02 | 2025-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
| TWI887376B (zh) | 2020-04-03 | 2025-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 半導體裝置的製造方法 |
| TWI888525B (zh) | 2020-04-08 | 2025-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
| KR20210127620A (ko) | 2020-04-13 | 2021-10-22 | 에이에스엠 아이피 홀딩 비.브이. | 질소 함유 탄소 막을 형성하는 방법 및 이를 수행하기 위한 시스템 |
| KR20210128343A (ko) | 2020-04-15 | 2021-10-26 | 에이에스엠 아이피 홀딩 비.브이. | 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조 |
| US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
| US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
| TW202143328A (zh) | 2020-04-21 | 2021-11-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於調整膜應力之方法 |
| CN113555279A (zh) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | 形成含氮化钒的层的方法及包含其的结构 |
| KR20210132612A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 화합물들을 안정화하기 위한 방법들 및 장치 |
| KR102866804B1 (ko) | 2020-04-24 | 2025-09-30 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리 |
| KR102934380B1 (ko) | 2020-04-24 | 2026-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 보라이드 및 바나듐 포스파이드 층을 포함한 구조체를 형성하는 방법 |
| KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
| KR102783898B1 (ko) | 2020-04-29 | 2025-03-18 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
| KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
| JP7726664B2 (ja) | 2020-05-04 | 2025-08-20 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板を処理するための基板処理システム |
| KR20210137395A (ko) | 2020-05-07 | 2021-11-17 | 에이에스엠 아이피 홀딩 비.브이. | 불소계 라디칼을 이용하여 반응 챔버의 인시츄 식각을 수행하기 위한 장치 및 방법 |
| JP7736446B2 (ja) | 2020-05-07 | 2025-09-09 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同調回路を備える反応器システム |
| KR102788543B1 (ko) | 2020-05-13 | 2025-03-27 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
| KR102936676B1 (ko) | 2020-05-15 | 2026-03-10 | 에이에스엠 아이피 홀딩 비.브이. | 다중 전구체를 사용하여 실리콘 게르마늄 균일도를 제어하기 위한 방법 |
| TWI911214B (zh) | 2020-05-19 | 2026-01-11 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備 |
| KR20210145079A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 기판을 처리하기 위한 플랜지 및 장치 |
| KR102795476B1 (ko) | 2020-05-21 | 2025-04-11 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
| KR102702526B1 (ko) | 2020-05-22 | 2024-09-03 | 에이에스엠 아이피 홀딩 비.브이. | 과산화수소를 사용하여 박막을 증착하기 위한 장치 |
| KR20210146802A (ko) | 2020-05-26 | 2021-12-06 | 에이에스엠 아이피 홀딩 비.브이. | 붕소 및 갈륨을 함유한 실리콘 게르마늄 층을 증착하는 방법 |
| TWI876048B (zh) | 2020-05-29 | 2025-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
| TW202212620A (zh) | 2020-06-02 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法 |
| KR20210156219A (ko) | 2020-06-16 | 2021-12-24 | 에이에스엠 아이피 홀딩 비.브이. | 붕소를 함유한 실리콘 게르마늄 층을 증착하는 방법 |
| TWI908816B (zh) | 2020-06-24 | 2025-12-21 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
| TWI873359B (zh) | 2020-06-30 | 2025-02-21 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
| TW202202649A (zh) | 2020-07-08 | 2022-01-16 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
| TWI864307B (zh) | 2020-07-17 | 2024-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於光微影之結構、方法與系統 |
| TWI878570B (zh) | 2020-07-20 | 2025-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
| KR20220011092A (ko) | 2020-07-20 | 2022-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 전이 금속층을 포함하는 구조체를 형성하기 위한 방법 및 시스템 |
| US12322591B2 (en) | 2020-07-27 | 2025-06-03 | Asm Ip Holding B.V. | Thin film deposition process |
| KR20220020210A (ko) | 2020-08-11 | 2022-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 티타늄 알루미늄 카바이드 막 구조체 및 관련 반도체 구조체를 증착하는 방법 |
| KR102915124B1 (ko) | 2020-08-14 | 2026-01-19 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
| US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
| TWI911263B (zh) | 2020-08-25 | 2026-01-11 | 荷蘭商Asm Ip私人控股有限公司 | 清潔基板的方法、選擇性沉積的方法、及反應器系統 |
| TW202534193A (zh) | 2020-08-26 | 2025-09-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成金屬氧化矽層及金屬氮氧化矽層的方法 |
| TWI911265B (zh) | 2020-08-27 | 2026-01-11 | 荷蘭商Asm Ip私人控股有限公司 | 形成圖案化結構的方法、操控機械特性的方法、及裝置結構 |
| USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
| KR20220036866A (ko) | 2020-09-16 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 산화물 증착 방법 |
| USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
| TWI889903B (zh) | 2020-09-25 | 2025-07-11 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
| US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
| KR20220045900A (ko) | 2020-10-06 | 2022-04-13 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치 |
| TW202229612A (zh) | 2020-10-06 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 在部件的側壁上形成氮化矽的方法及系統 |
| CN114293174A (zh) | 2020-10-07 | 2022-04-08 | Asm Ip私人控股有限公司 | 气体供应单元和包括气体供应单元的衬底处理设备 |
| KR102855834B1 (ko) | 2020-10-14 | 2025-09-04 | 에이에스엠 아이피 홀딩 비.브이. | 단차형 구조 상에 재료를 증착하는 방법 |
| KR102873665B1 (ko) | 2020-10-15 | 2025-10-17 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자의 제조 방법, 및 ether-cat을 사용하는 기판 처리 장치 |
| KR20220053482A (ko) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리 |
| TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
| TW202229620A (zh) | 2020-11-12 | 2022-08-01 | 特文特大學 | 沉積系統、用於控制反應條件之方法、沉積方法 |
| TW202229795A (zh) | 2020-11-23 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 具注入器之基板處理設備 |
| TW202235649A (zh) | 2020-11-24 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 填充間隙之方法與相關之系統及裝置 |
| KR20220076343A (ko) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터 |
| KR20220077875A (ko) | 2020-12-02 | 2022-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 샤워헤드 어셈블리용 세정 고정구 |
| US12255053B2 (en) | 2020-12-10 | 2025-03-18 | Asm Ip Holding B.V. | Methods and systems for depositing a layer |
| US12159788B2 (en) | 2020-12-14 | 2024-12-03 | Asm Ip Holding B.V. | Method of forming structures for threshold voltage control |
| CN114639631A (zh) | 2020-12-16 | 2022-06-17 | Asm Ip私人控股有限公司 | 跳动和摆动测量固定装置 |
| TW202232639A (zh) | 2020-12-18 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 具有可旋轉台的晶圓處理設備 |
| KR20220090438A (ko) | 2020-12-22 | 2022-06-29 | 에이에스엠 아이피 홀딩 비.브이. | 전이금속 증착 방법 |
| KR20220090435A (ko) | 2020-12-22 | 2022-06-29 | 에이에스엠 아이피 홀딩 비.브이. | 전구체 캡슐, 용기 및 방법 |
| TW202226899A (zh) | 2020-12-22 | 2022-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 具匹配器的電漿處理裝置 |
| USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
| USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
| USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
| USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
| USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
| USD1099184S1 (en) | 2021-11-29 | 2025-10-21 | Asm Ip Holding B.V. | Weighted lift pin |
| USD1060598S1 (en) | 2021-12-03 | 2025-02-04 | Asm Ip Holding B.V. | Split showerhead cover |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5316251Y2 (ja) * | 1973-03-30 | 1978-04-28 | ||
| US4523885A (en) * | 1982-04-29 | 1985-06-18 | Heraeus Quarzschmelze Gmbh | Apparatus for loading magazines into furnaces |
| JPS6291439U (ja) * | 1985-11-27 | 1987-06-11 | ||
| US4752219A (en) * | 1984-10-04 | 1988-06-21 | Btu Engineering Corporation | Wafer softlanding system and cooperative door assembly |
| JPH03151632A (ja) * | 1989-11-08 | 1991-06-27 | Toshiba Ceramics Co Ltd | 半導体ウェーハの熱処理炉 |
| JPH0521421A (ja) * | 1991-07-11 | 1993-01-29 | Tokyo Electron Ltd | 熱処理装置 |
| JP2004319979A (ja) * | 2003-03-28 | 2004-11-11 | Asahi Glass Co Ltd | 半導体熱処理装置 |
| US20070080156A1 (en) * | 2005-10-04 | 2007-04-12 | Samsung Electronics Co., Ltd. | Heat treatment equipment and method of driving the same |
| JP2010238900A (ja) * | 2009-03-31 | 2010-10-21 | Mitsubishi Materials Corp | 回路基板接合治具及び回路基板の製造方法 |
| JP2011166112A (ja) * | 2010-01-12 | 2011-08-25 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5614097Y2 (ja) | 1976-07-22 | 1981-04-02 | ||
| FR2685750B1 (fr) * | 1991-12-27 | 1994-04-01 | Propulsion Ste Europeenne | Vanne a joint retractable a double elasticite. |
| JP2548062B2 (ja) * | 1992-11-13 | 1996-10-30 | 日本エー・エス・エム株式会社 | 縦型熱処理装置用ロードロックチャンバー |
| JPH09148261A (ja) | 1995-11-16 | 1997-06-06 | Kokusai Electric Co Ltd | 縦型炉の炉口部構造 |
| US5796074A (en) * | 1995-11-28 | 1998-08-18 | Applied Materials, Inc. | Wafer heater assembly |
| JP2002261081A (ja) * | 2001-03-01 | 2002-09-13 | Asm Japan Kk | 半導体ウエハのエッチング装置及び方法 |
| JP2002359237A (ja) * | 2001-05-30 | 2002-12-13 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
| JP2003017543A (ja) * | 2001-06-28 | 2003-01-17 | Hitachi Kokusai Electric Inc | 基板処理装置、基板処理方法、半導体装置の製造方法および搬送装置 |
| JP4342765B2 (ja) | 2002-04-18 | 2009-10-14 | 株式会社日立国際電気 | 基板処理装置 |
| JP2004311509A (ja) * | 2003-04-02 | 2004-11-04 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| WO2010073955A1 (ja) * | 2008-12-24 | 2010-07-01 | 富士電機ホールディングス株式会社 | 可撓性基板の処理装置 |
| JP5606174B2 (ja) * | 2010-01-27 | 2014-10-15 | 株式会社日立国際電気 | 基板処理装置、基板処理方法、半導体装置の製造方法および反応室の閉塞方法。 |
| CN102135751B (zh) * | 2010-01-27 | 2014-08-20 | 京瓷办公信息系统株式会社 | 处理单元定位装置以及具有该装置的图像形成装置 |
-
2014
- 2014-01-28 JP JP2014013738A patent/JP6208588B2/ja active Active
-
2015
- 2015-01-26 US US14/604,866 patent/US9803926B2/en active Active
- 2015-01-26 TW TW104102445A patent/TWI598984B/zh active
- 2015-01-27 KR KR1020150012998A patent/KR101874673B1/ko active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5316251Y2 (ja) * | 1973-03-30 | 1978-04-28 | ||
| US4523885A (en) * | 1982-04-29 | 1985-06-18 | Heraeus Quarzschmelze Gmbh | Apparatus for loading magazines into furnaces |
| US4752219A (en) * | 1984-10-04 | 1988-06-21 | Btu Engineering Corporation | Wafer softlanding system and cooperative door assembly |
| JPS6291439U (ja) * | 1985-11-27 | 1987-06-11 | ||
| JPH03151632A (ja) * | 1989-11-08 | 1991-06-27 | Toshiba Ceramics Co Ltd | 半導体ウェーハの熱処理炉 |
| JPH0521421A (ja) * | 1991-07-11 | 1993-01-29 | Tokyo Electron Ltd | 熱処理装置 |
| JP2004319979A (ja) * | 2003-03-28 | 2004-11-11 | Asahi Glass Co Ltd | 半導体熱処理装置 |
| US20070080156A1 (en) * | 2005-10-04 | 2007-04-12 | Samsung Electronics Co., Ltd. | Heat treatment equipment and method of driving the same |
| JP2010238900A (ja) * | 2009-03-31 | 2010-10-21 | Mitsubishi Materials Corp | 回路基板接合治具及び回路基板の製造方法 |
| JP2011166112A (ja) * | 2010-01-12 | 2011-08-25 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI598984B (zh) | 2017-09-11 |
| TW201546940A (zh) | 2015-12-16 |
| US20150211796A1 (en) | 2015-07-30 |
| KR101874673B1 (ko) | 2018-07-04 |
| JP6208588B2 (ja) | 2017-10-04 |
| US9803926B2 (en) | 2017-10-31 |
| KR20150089963A (ko) | 2015-08-05 |
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