JP2015514310A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2015514310A5 JP2015514310A5 JP2015500989A JP2015500989A JP2015514310A5 JP 2015514310 A5 JP2015514310 A5 JP 2015514310A5 JP 2015500989 A JP2015500989 A JP 2015500989A JP 2015500989 A JP2015500989 A JP 2015500989A JP 2015514310 A5 JP2015514310 A5 JP 2015514310A5
- Authority
- JP
- Japan
- Prior art keywords
- metal
- composition
- silicon
- etching
- silicon surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 41
- 229910052751 metal Inorganic materials 0.000 claims 36
- 239000002184 metal Substances 0.000 claims 36
- 239000000203 mixture Substances 0.000 claims 35
- 238000000034 method Methods 0.000 claims 33
- 229910052710 silicon Inorganic materials 0.000 claims 33
- 239000010703 silicon Substances 0.000 claims 33
- 229910021645 metal ion Inorganic materials 0.000 claims 22
- 238000005530 etching Methods 0.000 claims 13
- 238000003486 chemical etching Methods 0.000 claims 9
- 239000011863 silicon-based powder Substances 0.000 claims 8
- 239000003638 chemical reducing agent Substances 0.000 claims 7
- 239000000843 powder Substances 0.000 claims 7
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 4
- 239000002253 acid Substances 0.000 claims 3
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 claims 3
- 229910000000 metal hydroxide Inorganic materials 0.000 claims 3
- 150000004692 metal hydroxides Chemical class 0.000 claims 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- 239000003513 alkali Substances 0.000 claims 2
- -1 fluoride ions Chemical class 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000007800 oxidant agent Substances 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 229910020366 ClO 4 Inorganic materials 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 claims 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 150000001455 metallic ions Chemical class 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000007858 starting material Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1205178.5 | 2012-03-23 | ||
| GBGB1205178.5A GB201205178D0 (en) | 2012-03-23 | 2012-03-23 | Etched silicon structures, method of forming etched silicon structures and uses thereof |
| PCT/GB2013/050742 WO2013140177A2 (en) | 2012-03-23 | 2013-03-21 | Etched silicon structures, method of forming etched silicon structures and uses thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015514310A JP2015514310A (ja) | 2015-05-18 |
| JP2015514310A5 true JP2015514310A5 (2) | 2016-05-19 |
Family
ID=46087043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015500989A Withdrawn JP2015514310A (ja) | 2012-03-23 | 2013-03-21 | エッチングされたシリコン構造、エッチングされたシリコン構造を形成する方法およびその使用 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20150050556A1 (2) |
| EP (1) | EP2828417A2 (2) |
| JP (1) | JP2015514310A (2) |
| KR (1) | KR20140137427A (2) |
| CN (1) | CN104204292A (2) |
| GB (2) | GB201205178D0 (2) |
| TW (1) | TW201403926A (2) |
| WO (1) | WO2013140177A2 (2) |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2492167C (en) | 2011-06-24 | 2018-12-05 | Nexeon Ltd | Structured particles |
| GB201122315D0 (en) * | 2011-12-23 | 2012-02-01 | Nexeon Ltd | Etched silicon structures, method of forming etched silicon structures and uses thereof |
| JP2015510666A (ja) | 2012-01-30 | 2015-04-09 | ネクソン リミテッドＮｅｘｅｏｎ Ｌｉｍｉｔｅｄ | Ｓｉ／Ｃ電気活性材料組成物 |
| GB2499984B (en) | 2012-02-28 | 2014-08-06 | Nexeon Ltd | Composite particles comprising a removable filler |
| GB2502625B (en) | 2012-06-06 | 2015-07-29 | Nexeon Ltd | Method of forming silicon |
| GB2507535B (en) | 2012-11-02 | 2015-07-15 | Nexeon Ltd | Multilayer electrode |
| US10086317B2 (en) | 2013-10-30 | 2018-10-02 | Hewlett-Packard Development Company, L.P. | Island etched filter passages |
| US9938139B2 (en) | 2013-10-30 | 2018-04-10 | Hewlett-Packard Development Company, L.P. | Nonparallel island etching |
| KR101567203B1 (ko) | 2014-04-09 | 2015-11-09 | (주)오렌지파워 | 이차 전지용 음극 활물질 및 이의 방법 |
| KR101604352B1 (ko) | 2014-04-22 | 2016-03-18 | (주)오렌지파워 | 음극 활물질 및 이를 포함하는 리튬 이차 전지 |
| KR101550781B1 (ko) | 2014-07-23 | 2015-09-08 | (주)오렌지파워 | 2 차 전지용 실리콘계 활물질 입자의 제조 방법 |
| GB2529411A (en) * | 2014-08-18 | 2016-02-24 | Nexeon Ltd | Electroactive materials for metal-ion batteries |
| JP6121959B2 (ja) * | 2014-09-11 | 2017-04-26 | 株式会社東芝 | エッチング方法、物品及び半導体装置の製造方法、並びにエッチング液 |
| KR101620981B1 (ko) * | 2014-11-11 | 2016-05-16 | 연세대학교 산학협력단 | 기판 식각 방법 |
| KR101823069B1 (ko) * | 2014-11-19 | 2018-01-30 | 연세대학교 산학협력단 | 구형의 실리카 표면에 나노선 형태로 음각화되어 있는 이산화탄소 건식흡착제용 담체 및 이의 제조방법 |
| GB2533161C (en) | 2014-12-12 | 2019-07-24 | Nexeon Ltd | Electrodes for metal-ion batteries |
| JP6840476B2 (ja) | 2015-07-16 | 2021-03-10 | 株式会社半導体エネルギー研究所 | 蓄電装置の作製方法 |
| JP6667173B2 (ja) * | 2015-08-10 | 2020-03-18 | 国立大学法人信州大学 | 銀担持シリコンの製造方法 |
| CH711498B1 (fr) * | 2015-09-08 | 2020-03-13 | Nivarox Sa | Procédé de fabrication d'une pièce micromécanique horlogère et ladite pièce micromécanique horlogère. |
| EP3141522B1 (fr) * | 2015-09-08 | 2018-05-02 | Nivarox-FAR S.A. | Pièce micromécanique horlogère comprenant une surface lubrifiée et procédé de réalisation d'une telle pièce micromécanique horlogère |
| EP3141520B1 (fr) * | 2015-09-08 | 2018-03-14 | Nivarox-FAR S.A. | Procédé de fabrication d'une pièce micromécanique horlogère et ladite pièce micromécanique horlogère |
| EP3141966B1 (fr) * | 2015-09-08 | 2018-05-09 | Nivarox-FAR S.A. | Procede de formation d'une surface decorative sur une piece micromecanique horlogere et ladite piece micromecanique horlogere |
| CN105177537B (zh) * | 2015-09-16 | 2018-02-23 | 东莞深圳清华大学研究院创新中心 | 一种铜包覆单晶蓝宝石纤维的制备方法 |
| CN105271236B (zh) * | 2015-10-13 | 2017-11-21 | 苏州大学 | 一种制备梭形硅纳米材料的方法 |
| CN105349785A (zh) * | 2015-10-28 | 2016-02-24 | 江苏辉伦太阳能科技有限公司 | 一种硅纳米绒面上金属催化剂去除和回收的方法 |
| JP2019503032A (ja) * | 2015-11-17 | 2019-01-31 | ネグゼオン・リミテッドＮｅｘｅｏｎ Ｌｔｄ | 官能化された電気化学的活性材料および官能化の方法 |
| EP3176650B1 (fr) * | 2015-12-02 | 2019-02-06 | Nivarox-FAR S.A. | Protection d'un composant d'horlogerie en materiau micro-usinable |
| TW201725385A (zh) | 2016-01-05 | 2017-07-16 | 財團法人工業技術研究院 | 具有薄層層析之拉曼檢測晶片及分離檢測分析物之方法 |
| CN105810761B (zh) * | 2016-04-29 | 2018-07-27 | 南京工业大学 | 一种金刚线切割多晶硅片的制绒方法 |
| DE102016218501A1 (de) | 2016-09-27 | 2018-03-29 | Robert Bosch Gmbh | Ätzverfahren zur Herstellung von porösen Siliciumpartikeln |
| SG11202005030XA (en) * | 2017-11-28 | 2020-06-29 | Univ Texas | Catalyst influenced pattern transfer technology |
| US10833311B2 (en) * | 2018-07-03 | 2020-11-10 | International Business Machines Corporation | Method of making an anode structure containing a porous region |
| CN112400245B (zh) * | 2018-07-03 | 2024-08-27 | 国际商业机器公司 | 具有包含多孔区域的阳极结构的可再充电锂离子电池 |
| CN109490218A (zh) * | 2018-10-11 | 2019-03-19 | 湖北兴福电子材料有限公司 | 一种金属离子在检测多晶硅蚀刻速率上的应用 |
| CN109728309B (zh) * | 2019-01-05 | 2021-04-27 | 湖南科技大学 | 一种钯纳米线修饰的氮掺杂碳空心球复合材料的制备方法及产品和应用 |
| US12583753B2 (en) * | 2019-03-26 | 2026-03-24 | Tohoku University | Porous amorphous silicon, method for producing porous amorphous silicon, and secondary battery |
| CN110350181B (zh) * | 2019-07-16 | 2021-08-24 | 昆明理工大学 | 一种锂离子电池纳米多孔硅负极材料的制备方法 |
| US12106968B2 (en) * | 2019-08-01 | 2024-10-01 | Ram Nanotech, Incorporated | Injection metal assisted catalytic etching |
| CN110684535B (zh) * | 2019-09-26 | 2021-04-13 | 长江存储科技有限责任公司 | 磷酸刻蚀溶液 |
| DE102020103469A1 (de) * | 2020-02-11 | 2021-08-12 | Christian-Albrechts-Universität Zu Kiel | Verfahren zur Herstellung einer zyklenstabilen Silizium-Anode für Sekundärbatterien |
| WO2021167434A1 (ko) * | 2020-02-20 | 2021-08-26 | 한양대학교 에리카산학협력단 | 금속 음극 전극, 이를 포함하는 이차 전지, 및 그 제조 방법 |
| WO2021167431A1 (ko) | 2020-02-20 | 2021-08-26 | 한양대학교 에리카산학협력단 | 복합 섬유, 이를 포함하는 고체 전해질, 및 이를 포함하는 금속 공기 전지 |
| JP7404121B2 (ja) | 2020-03-24 | 2023-12-25 | 株式会社東芝 | 触媒層の形成方法 |
| CN111504976B (zh) * | 2020-04-29 | 2021-12-28 | 深圳米瑞科信息技术有限公司 | 石墨烯/Cu-Cu2S复合材料及其制备方法 |
| CN113851476A (zh) * | 2020-06-10 | 2021-12-28 | 中国科学院微电子研究所 | 一种半导体器件及其制作方法、电子设备 |
| NL2027980B1 (en) * | 2021-04-15 | 2022-10-25 | E Magy B V | Nano-structured carbon coated silicon material and manufacturing method for use in lithium ion based secondary batteries |
| CN114164456B (zh) * | 2021-12-08 | 2023-08-08 | 昆明理工大学 | 一种利用工业废硅粉制备复合硅纳米结构催化剂的方法及应用 |
| CN113991095B (zh) * | 2021-12-28 | 2022-04-01 | 安普瑞斯（南京）有限公司 | 负极活性材料及其制备方法、电极、电池 |
| KR102525342B1 (ko) * | 2022-11-22 | 2023-04-26 | (주)성원피앤에스 | 복합 필러를 포함하는 실리콘 고무용 안료 조성물 및 이의 제조방법 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6790785B1 (en) * | 2000-09-15 | 2004-09-14 | The Board Of Trustees Of The University Of Illinois | Metal-assisted chemical etch porous silicon formation method |
| WO2002103752A2 (en) * | 2000-11-27 | 2002-12-27 | The Board Of Trustees Of The University Of Illinois | Metal-assisted chemical etch to produce porous group iii-v materials |
| DE10392752T5 (de) * | 2002-06-06 | 2005-06-02 | Kansai Technology Licensing Organization Co., Ltd. | Verfahren zur Herstellung eines multikristallinen Siliziumsubstrats für Solarzellen |
| TW200620451A (en) * | 2004-11-09 | 2006-06-16 | Univ Osaka | Method for forming hole in crystal substrate, and crystal substrate having hole formed by the method |
| WO2006078952A1 (en) * | 2005-01-21 | 2006-07-27 | University Of California | Methods for fabricating a long-range ordered periodic array of nano-features, and articles comprising same |
| DE102005041877A1 (de) * | 2005-09-02 | 2007-03-08 | Koynov, Svetoslav, Dr. | Verfahren zur Herstellung siliziumhaltiger Oberflächen und optoelektronische Bauelemente |
| JP2007194485A (ja) * | 2006-01-20 | 2007-08-02 | Osaka Univ | 太陽電池用シリコン基板の製造方法 |
| GB0601318D0 (en) * | 2006-01-23 | 2006-03-01 | Imp Innovations Ltd | Method of etching a silicon-based material |
| KR100971658B1 (ko) * | 2008-01-03 | 2010-07-22 | 엘지전자 주식회사 | 실리콘 태양전지의 텍스처링 방법 |
| WO2010114887A1 (en) * | 2009-03-31 | 2010-10-07 | Georgia Tech Research Corporation | Metal-assisted chemical etching of substrates |
| TWI472477B (zh) * | 2010-03-02 | 2015-02-11 | 國立臺灣大學 | 矽奈米結構與其製造方法及應用 |
| TWI505348B (zh) * | 2010-10-08 | 2015-10-21 | 華康半導體股份有限公司 | And a method of forming a microporous structure or a groove structure on the surface of the silicon substrate |
| JP5467697B2 (ja) * | 2011-10-07 | 2014-04-09 | 株式会社ジェイ・イー・ティ | 太陽電池の製造方法 |
| GB201122315D0 (en) * | 2011-12-23 | 2012-02-01 | Nexeon Ltd | Etched silicon structures, method of forming etched silicon structures and uses thereof |
-
2012
- 2012-03-23 GB GBGB1205178.5A patent/GB201205178D0/en not_active Ceased
-
2013
- 2013-03-21 GB GB1305214.7A patent/GB2500810B/en not_active Expired - Fee Related
- 2013-03-21 JP JP2015500989A patent/JP2015514310A/ja not_active Withdrawn
- 2013-03-21 CN CN201380015837.7A patent/CN104204292A/zh active Pending
- 2013-03-21 US US14/387,284 patent/US20150050556A1/en not_active Abandoned
- 2013-03-21 WO PCT/GB2013/050742 patent/WO2013140177A2/en not_active Ceased
- 2013-03-21 KR KR1020147028532A patent/KR20140137427A/ko not_active Withdrawn
- 2013-03-21 EP EP13717817.4A patent/EP2828417A2/en not_active Withdrawn
- 2013-03-22 TW TW102110224A patent/TW201403926A/zh unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2015514310A5 (2) | ||
| JP2015504568A5 (2) | ||
| JP2011066392A5 (ja) | Ｓｏｉ基板の作製方法 | |
| GB201305214D0 (en) | Etched silicon structures, method of forming etched silicon structures and uses thereof | |
| JP2012094734A5 (2) | ||
| JP2011530542A5 (2) | ||
| JP2015509283A5 (2) | ||
| CN103668207B (zh) | 蚀刻剂和使用该蚀刻剂制造显示设备的方法 | |
| US20120088372A1 (en) | Method of forming micro-pore structures or trench structures on surface of silicon wafer substrate | |
| JP5753180B2 (ja) | エッチング液組成物 | |
| JP2014172178A5 (2) | ||
| Brahiti et al. | Metal-assisted electroless etching of silicon in aqueous NH4HF2 solution | |
| CN104651840B (zh) | 蚀刻用组合物以及使用了其的印刷电路板的制造方法 | |
| JP2014013810A5 (2) | ||
| JP2017179403A5 (2) | ||
| JP2012004275A5 (2) | ||
| JP6251043B2 (ja) | エッチング液、エッチング方法、およびはんだバンプの製造方法 | |
| JP2011071493A5 (ja) | 半導体基板の再生方法 | |
| JP2012019205A5 (2) | ||
| JP2011071494A5 (ja) | 半導体基板の再生方法 | |
| JP2013151755A5 (2) | ||
| JP2018172797A5 (2) | ||
| JP6159505B2 (ja) | 扁平銅粒子 | |
| JP2016127224A5 (2) | ||
| JP2015012055A5 (2) |