JP2016510363A5 - - Google Patents

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Publication number
JP2016510363A5
JP2016510363A5 JP2015557463A JP2015557463A JP2016510363A5 JP 2016510363 A5 JP2016510363 A5 JP 2016510363A5 JP 2015557463 A JP2015557463 A JP 2015557463A JP 2015557463 A JP2015557463 A JP 2015557463A JP 2016510363 A5 JP2016510363 A5 JP 2016510363A5
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JP
Japan
Prior art keywords
mgo
zno
sputtering target
less
target according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2015557463A
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English (en)
Japanese (ja)
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JP2016510363A (ja
Filing date
Publication date
Priority claimed from EP13155587.2A external-priority patent/EP2767610B1/en
Application filed filed Critical
Publication of JP2016510363A publication Critical patent/JP2016510363A/ja
Publication of JP2016510363A5 publication Critical patent/JP2016510363A5/ja
Withdrawn legal-status Critical Current

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JP2015557463A 2013-02-18 2014-02-18 ＺｎＯ−Ａｌ２Ｏ３−ＭｇＯスパッタリングターゲット及びその製造方法 Withdrawn JP2016510363A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13155587.2A EP2767610B1 (en) 2013-02-18 2013-02-18 ZnO-Al2O3-MgO sputtering target and method for the production thereof
EP13155587.2 2013-02-18
PCT/EP2014/053128 WO2014125122A1 (en) 2013-02-18 2014-02-18 Zno-al2o3-mgo sputtering target and method for the production thereof

Publications (2)

Publication Number Publication Date
JP2016510363A JP2016510363A (ja) 2016-04-07
JP2016510363A5 true JP2016510363A5 (2) 2017-01-12

Family

ID=47739126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015557463A Withdrawn JP2016510363A (ja) 2013-02-18 2014-02-18 ＺｎＯ−Ａｌ２Ｏ３−ＭｇＯスパッタリングターゲット及びその製造方法

Country Status (4)

Country Link
EP (1) EP2767610B1 (2)
JP (1) JP2016510363A (2)
CN (1) CN105008579B (2)
WO (1) WO2014125122A1 (2)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106187100B (zh) * 2015-05-04 2019-02-12 清华大学 溅射靶及其制备方法
CN108559959A (zh) * 2018-01-12 2018-09-21 基迈克材料科技（苏州）有限公司 复合金属氧化物靶材材料、靶材及靶材材料、靶材的制备方法
CN109133910B (zh) * 2018-09-13 2021-07-20 先导薄膜材料（广东）有限公司 Zmo靶材的生产方法
CN112912355A (zh) * 2018-10-31 2021-06-04 出光兴产株式会社 烧结体
KR102931422B1 (ko) * 2019-06-27 2026-02-25 이데미쓰 고산 가부시키가이샤 산화물 소결체
CN113073302B (zh) * 2021-04-09 2023-02-14 基迈克材料科技（苏州）有限公司 Zmo靶材及其制备方法
CN114477994A (zh) * 2022-01-25 2022-05-13 广东爱晟电子科技有限公司 一种大功率陶瓷芯片电阻及其材料和制备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4828529B2 (ja) * 2005-05-30 2011-11-30 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット及びその製造方法
US20070071985A1 (en) * 2005-09-29 2007-03-29 Prabhat Kumar Sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein
KR101313327B1 (ko) * 2006-06-08 2013-09-27 스미토모 긴조쿠 고잔 가부시키가이샤 산화물 소결체, 타겟, 이를 사용하여 제조된 투명 도전막 및 투명 도전성 기재
WO2011025283A2 (ko) * 2009-08-27 2011-03-03 주식회사 아모텍 ＺｎＯ계 바리스터 조성물
KR20120094013A (ko) * 2009-11-13 2012-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟 및 그 제조방법, 및 트랜지스터
EP2514851B1 (en) * 2009-12-16 2015-04-15 Mitsubishi Materials Corporation Transparent conductive film, solar cell using same, sputtering target for forming said transparent conductive film, and manufacturing method therefor

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