JP2017017179A - 半導体材料、半導体材料の製造方法、n型半導体材料とp型半導体材料の組み合わせ、複合型半導体材料の製造方法、複合型半導体材料および素子 - Google Patents

半導体材料、半導体材料の製造方法、n型半導体材料とp型半導体材料の組み合わせ、複合型半導体材料の製造方法、複合型半導体材料および素子 Download PDF

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JP2017017179A
JP2017017179A JP2015132427A JP2015132427A JP2017017179A JP 2017017179 A JP2017017179 A JP 2017017179A JP 2015132427 A JP2015132427 A JP 2015132427A JP 2015132427 A JP2015132427 A JP 2015132427A JP 2017017179 A JP2017017179 A JP 2017017179A
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semiconductor material
dopant
type semiconductor
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Japanese (ja)
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ソンビン ファン
Sunbin HWANG
ソンビン ファン
安達 千波矢
Chihaya Adachi
千波矢 安達
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Kyushu University NUC
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Kyushu University NUC
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Priority to JP2015132427A priority Critical patent/JP2017017179A/ja
Priority to PCT/JP2016/069495 priority patent/WO2017002935A1/fr
Publication of JP2017017179A publication Critical patent/JP2017017179A/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00Subject matter not provided for in other groups of this subclass
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/856Thermoelectric active materials comprising organic compositions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Thin Film Transistor (AREA)
JP2015132427A 2015-07-01 2015-07-01 半導体材料、半導体材料の製造方法、n型半導体材料とp型半導体材料の組み合わせ、複合型半導体材料の製造方法、複合型半導体材料および素子 Pending JP2017017179A (ja)

Priority Applications (2)

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JP2015132427A JP2017017179A (ja) 2015-07-01 2015-07-01 半導体材料、半導体材料の製造方法、n型半導体材料とp型半導体材料の組み合わせ、複合型半導体材料の製造方法、複合型半導体材料および素子
PCT/JP2016/069495 WO2017002935A1 (fr) 2015-07-01 2016-06-30 MATÉRIAU SEMI-CONDUCTEUR, PROCÉDÉ DE FABRICATION DE MATÉRIAU SEMI-CONDUCTEUR, COMBINAISON D'UN MATÉRIAU SEMI-CONDUCTEUR DU TYPE n ET D'UN MATÉRIAU SEMI-CONDUCTEUR DU TYPE p, PROCÉDÉ DE FABRICATION DE MATÉRIAU SEMI-CONDUCTEUR COMPOSITE, MATÉRIAU SEMI-CONDUCTEUR COMPOSITE, ET DISPOSITIF

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JP2015132427A JP2017017179A (ja) 2015-07-01 2015-07-01 半導体材料、半導体材料の製造方法、n型半導体材料とp型半導体材料の組み合わせ、複合型半導体材料の製造方法、複合型半導体材料および素子

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JP2017017179A true JP2017017179A (ja) 2017-01-19

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JP2015132427A Pending JP2017017179A (ja) 2015-07-01 2015-07-01 半導体材料、半導体材料の製造方法、n型半導体材料とp型半導体材料の組み合わせ、複合型半導体材料の製造方法、複合型半導体材料および素子

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WO (1) WO2017002935A1 (fr)

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* Cited by examiner, † Cited by third party
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US4177473A (en) * 1977-05-18 1979-12-04 Energy Conversion Devices, Inc. Amorphous semiconductor member and method of making the same
JP5768299B2 (ja) * 2013-02-28 2015-08-26 国立大学法人 奈良先端科学技術大学院大学 ドーパントの選択方法、ドーパント組成物、カーボンナノチューブ−ドーパント複合体の製造方法、シート状材料およびカーボンナノチューブ−ドーパント複合体

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