JP2017017179A - 半導体材料、半導体材料の製造方法、n型半導体材料とp型半導体材料の組み合わせ、複合型半導体材料の製造方法、複合型半導体材料および素子 - Google Patents
半導体材料、半導体材料の製造方法、n型半導体材料とp型半導体材料の組み合わせ、複合型半導体材料の製造方法、複合型半導体材料および素子 Download PDFInfo
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- JP2017017179A JP2017017179A JP2015132427A JP2015132427A JP2017017179A JP 2017017179 A JP2017017179 A JP 2017017179A JP 2015132427 A JP2015132427 A JP 2015132427A JP 2015132427 A JP2015132427 A JP 2015132427A JP 2017017179 A JP2017017179 A JP 2017017179A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K99/00—Subject matter not provided for in other groups of this subclass
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/856—Thermoelectric active materials comprising organic compositions
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- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
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Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015132427A JP2017017179A (ja) | 2015-07-01 | 2015-07-01 | 半導体材料、半導体材料の製造方法、n型半導体材料とp型半導体材料の組み合わせ、複合型半導体材料の製造方法、複合型半導体材料および素子 |
| PCT/JP2016/069495 WO2017002935A1 (fr) | 2015-07-01 | 2016-06-30 | MATÉRIAU SEMI-CONDUCTEUR, PROCÉDÉ DE FABRICATION DE MATÉRIAU SEMI-CONDUCTEUR, COMBINAISON D'UN MATÉRIAU SEMI-CONDUCTEUR DU TYPE n ET D'UN MATÉRIAU SEMI-CONDUCTEUR DU TYPE p, PROCÉDÉ DE FABRICATION DE MATÉRIAU SEMI-CONDUCTEUR COMPOSITE, MATÉRIAU SEMI-CONDUCTEUR COMPOSITE, ET DISPOSITIF |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015132427A JP2017017179A (ja) | 2015-07-01 | 2015-07-01 | 半導体材料、半導体材料の製造方法、n型半導体材料とp型半導体材料の組み合わせ、複合型半導体材料の製造方法、複合型半導体材料および素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2017017179A true JP2017017179A (ja) | 2017-01-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015132427A Pending JP2017017179A (ja) | 2015-07-01 | 2015-07-01 | 半導体材料、半導体材料の製造方法、n型半導体材料とp型半導体材料の組み合わせ、複合型半導体材料の製造方法、複合型半導体材料および素子 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2017017179A (fr) |
| WO (1) | WO2017002935A1 (fr) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4177473A (en) * | 1977-05-18 | 1979-12-04 | Energy Conversion Devices, Inc. | Amorphous semiconductor member and method of making the same |
| JP5768299B2 (ja) * | 2013-02-28 | 2015-08-26 | 国立大学法人 奈良先端科学技術大学院大学 | ドーパントの選択方法、ドーパント組成物、カーボンナノチューブ−ドーパント複合体の製造方法、シート状材料およびカーボンナノチューブ−ドーパント複合体 |
-
2015
- 2015-07-01 JP JP2015132427A patent/JP2017017179A/ja active Pending
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2016
- 2016-06-30 WO PCT/JP2016/069495 patent/WO2017002935A1/fr not_active Ceased
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| Publication number | Publication date |
|---|---|
| WO2017002935A1 (fr) | 2017-01-05 |
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