JP2017168420A5 - - Google Patents
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- JP2017168420A5 JP2017168420A5 JP2016169904A JP2016169904A JP2017168420A5 JP 2017168420 A5 JP2017168420 A5 JP 2017168420A5 JP 2016169904 A JP2016169904 A JP 2016169904A JP 2016169904 A JP2016169904 A JP 2016169904A JP 2017168420 A5 JP2017168420 A5 JP 2017168420A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- substance
- light
- light emitting
- skeleton
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015172107 | 2015-09-01 | ||
| JP2015172107 | 2015-09-01 | ||
| JP2015233260 | 2015-11-30 | ||
| JP2015233260 | 2015-11-30 | ||
| JP2016050742 | 2016-03-15 | ||
| JP2016050742 | 2016-03-15 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017168420A JP2017168420A (ja) | 2017-09-21 |
| JP2017168420A5 true JP2017168420A5 (2) | 2019-10-03 |
| JP6929625B2 JP6929625B2 (ja) | 2021-09-01 |
Family
ID=58104420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016169904A Expired - Fee Related JP6929625B2 (ja) | 2015-09-01 | 2016-08-31 | 発光素子、発光装置、電子機器及び照明装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20170062749A1 (2) |
| JP (1) | JP6929625B2 (2) |
| KR (1) | KR20170027305A (2) |
| CN (1) | CN106486607B (2) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356463B (zh) * | 2016-10-11 | 2017-12-29 | 深圳市华星光电技术有限公司 | Qled显示装置的制作方法 |
| KR101900775B1 (ko) * | 2017-03-20 | 2018-09-20 | 주식회사 페타룩스 | 양자점 발광소자 및 이를 포함하는 백라이트 유닛 |
| CN107665639A (zh) * | 2017-03-27 | 2018-02-06 | 广东聚华印刷显示技术有限公司 | Qled发光显示器件 |
| US10818856B2 (en) * | 2017-05-18 | 2020-10-27 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method for fabricating thin film transistor, method for fabricating array substrate, and a display apparatus |
| CN108346751B (zh) * | 2017-08-21 | 2019-06-11 | 广东聚华印刷显示技术有限公司 | 电致发光器件及其发光层和应用 |
| CN109428005B (zh) | 2017-08-30 | 2020-05-08 | 昆山国显光电有限公司 | 有机电致发光器件 |
| WO2019049190A1 (ja) * | 2017-09-05 | 2019-03-14 | シャープ株式会社 | 発光デバイス、発光デバイスの製造装置 |
| CN111183709B (zh) * | 2017-09-12 | 2023-12-01 | 株式会社半导体能源研究所 | 发光元件、发光装置、电子设备及照明装置 |
| JP2019071249A (ja) * | 2017-10-11 | 2019-05-09 | Dic株式会社 | 発光素子および画像表示装置 |
| EP3709774A4 (en) * | 2017-11-08 | 2021-08-18 | NS Materials Inc. | DISPLAY DEVICE |
| JP2019114780A (ja) * | 2017-12-22 | 2019-07-11 | 株式会社半導体エネルギー研究所 | 電子デバイス、発光素子、発光装置、電子機器及び照明装置 |
| WO2019159236A1 (ja) * | 2018-02-13 | 2019-08-22 | シャープ株式会社 | 発光素子、発光デバイス、発光素子の製造装置 |
| KR102697768B1 (ko) | 2018-03-26 | 2024-08-21 | 삼성전자주식회사 | 전계 발광 소자 및 이를 포함하는 표시 장치 |
| WO2019186847A1 (ja) * | 2018-03-28 | 2019-10-03 | シャープ株式会社 | 発光素子および発光素子の製造方法 |
| WO2019186846A1 (ja) * | 2018-03-28 | 2019-10-03 | シャープ株式会社 | 発光素子および表示装置 |
| CN119403406A (zh) | 2018-06-06 | 2025-02-07 | 株式会社半导体能源研究所 | 显示装置、显示模块及电子设备 |
| KR20250079071A (ko) | 2018-06-06 | 2025-06-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치, 표시 장치, 및 전자 기기 |
| JP7178215B2 (ja) * | 2018-08-30 | 2022-11-25 | エルジー ディスプレイ カンパニー リミテッド | 無機発光素子 |
| US11908850B2 (en) | 2018-09-05 | 2024-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module, electronic device, and method for manufacturing display device |
| WO2020049397A1 (ja) | 2018-09-07 | 2020-03-12 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、及び電子機器 |
| CN113196366A (zh) | 2018-09-28 | 2021-07-30 | 株式会社半导体能源研究所 | 显示装置的制造方法、显示装置的制造装置 |
| CN111370585A (zh) * | 2018-12-26 | 2020-07-03 | 广东聚华印刷显示技术有限公司 | 发光器件及显示装置 |
| CN113412438A (zh) | 2019-02-06 | 2021-09-17 | 株式会社半导体能源研究所 | 发光器件、发光装置、电子设备、显示装置及照明装置 |
| KR20210149797A (ko) * | 2019-04-12 | 2021-12-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 디바이스, 발광 장치, 발광 모듈, 전자 기기, 및 조명 장치 |
| TW202513513A (zh) * | 2019-06-14 | 2025-04-01 | 日商半導體能源研究所股份有限公司 | 發光器件、發光裝置、電子裝置及照明設備 |
| US11710760B2 (en) | 2019-06-21 | 2023-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module, electronic device, and manufacturing method of display device |
| US12284860B2 (en) | 2019-09-19 | 2025-04-22 | Sharp Kabushiki Kaisha | Light-emitting element having a p-type hole transport layer with n-type nanoparticles dispersed therein and a display device thereof |
| KR102712541B1 (ko) * | 2019-09-30 | 2024-09-30 | 삼성전자주식회사 | 전계 발광 소자 및 이를 포함하는 표시 장치 |
| US11482687B2 (en) | 2019-11-08 | 2022-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, electronic device, and lighting device |
| JP7641724B2 (ja) | 2019-11-12 | 2025-03-07 | 株式会社半導体エネルギー研究所 | 機能パネル、表示装置、入出力装置、情報処理装置 |
| US11610877B2 (en) | 2019-11-21 | 2023-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Functional panel, display device, input/output device, and data processing device |
| CN111029475A (zh) * | 2019-11-25 | 2020-04-17 | 深圳市华星光电半导体显示技术有限公司 | 显示器及其制备方法 |
| CN112151688A (zh) * | 2020-09-27 | 2020-12-29 | 京东方科技集团股份有限公司 | 一种发光器件、显示基板和显示装置 |
| KR20240019325A (ko) * | 2021-06-10 | 2024-02-14 | 이데미쓰 고산 가부시키가이샤 | 유기 일렉트로루미네센스 소자, 유기 일렉트로루미네센스 표시 장치 및 전자 기기 |
| WO2024182755A1 (en) * | 2023-03-02 | 2024-09-06 | Triad National Security, Llc | Electrically excited semiconductor nanocrystal optical-gain devices including optical amplifiers, lasers, and laser diodes |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007095061A2 (en) * | 2006-02-09 | 2007-08-23 | Qd Vision, Inc. | Device including semiconductor nanocrystals and a layer including a doped organic material and methods |
| US8115382B2 (en) * | 2007-09-20 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device, comprising controlled carrier transport |
| CN102047098B (zh) * | 2008-04-03 | 2016-05-04 | Qd视光有限公司 | 包括量子点的发光器件 |
| CN103107289B (zh) * | 2008-04-28 | 2015-08-26 | 大日本印刷株式会社 | 用于形成空穴注入传输层的含过渡金属的纳米粒子及其制造方法 |
| JP2010254671A (ja) * | 2009-03-31 | 2010-11-11 | Semiconductor Energy Lab Co Ltd | カルバゾール誘導体、発光素子用材料、発光素子、発光装置、電子機器、及び照明装置 |
| US8389979B2 (en) * | 2009-05-29 | 2013-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
| FR2957718B1 (fr) * | 2010-03-16 | 2012-04-20 | Commissariat Energie Atomique | Diode electroluminescente hybride a rendement eleve |
| KR101274068B1 (ko) * | 2010-05-25 | 2013-06-12 | 서울대학교산학협력단 | 양자점 발광 소자 및 이를 이용한 디스플레이 |
| JP2013539584A (ja) * | 2010-07-26 | 2013-10-24 | メルク パテント ゲーエムベーハー | 量子ドットおよびホスト |
| WO2012046560A1 (en) * | 2010-10-04 | 2012-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Composite material, light-emitting element, light-emitting device, electronic device, and lighting device |
| JP5839912B2 (ja) * | 2011-09-22 | 2016-01-06 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置 |
| US9299942B2 (en) * | 2012-03-30 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, display device, electronic appliance, and lighting device |
| WO2014085469A1 (en) * | 2012-11-27 | 2014-06-05 | Massachusetts Institute Of Technology | Deposition of semiconductor nanocrystals for light emitting devices |
| GB201306365D0 (en) * | 2013-04-09 | 2013-05-22 | Kathirgamanathan Poopathy | Heterocyclic compounds and their use in electro-optical or opto-electronic devices |
| TWI686971B (zh) * | 2013-08-09 | 2020-03-01 | 日商半導體能源研究所股份有限公司 | 發光元件、顯示模組、照明模組、發光裝置、顯示裝置、電子裝置、及照明裝置 |
-
2016
- 2016-08-30 US US15/251,275 patent/US20170062749A1/en not_active Abandoned
- 2016-08-31 KR KR1020160111762A patent/KR20170027305A/ko not_active Abandoned
- 2016-08-31 CN CN201610791141.9A patent/CN106486607B/zh not_active Expired - Fee Related
- 2016-08-31 JP JP2016169904A patent/JP6929625B2/ja not_active Expired - Fee Related
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