JP2019502017A - 真空堆積処理において基板を保持するための装置、基板上に層を堆積するためのシステム、及び基板を保持するための方法 - Google Patents
真空堆積処理において基板を保持するための装置、基板上に層を堆積するためのシステム、及び基板を保持するための方法 Download PDFInfo
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
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- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
- H10P72/3206—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
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- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3314—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
- H10P72/722—Details of electrostatic chucks
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Abstract
Description
Claims (15)
- 真空堆積処理において基板を保持するための装置であって、
支持面、
前記基板及びマスクのうちの少なくとも1つに作用する引力を加えるように構成された複数の電極を有する電極アレンジメント、及び
第1の電圧極性設定と、前記第1の電圧極性設定とは異なる第2の電圧極性設定とを前記電極アレンジメントに適用するように構成されたコントローラであって、前記第1の電圧極性設定と前記第2の電圧極性設定との間で切り替えるように構成された、コントローラ
を備えている装置。 - 前記コントローラが、第1の極性を有する第1の電圧、第2の極性を有する第2の電圧、及び前記複数の電極への接地のうちの少なくとも1つを選択的に適用するように構成されている、請求項1に記載の装置。
- 前記複数の電極が、1つ又は複数の第1の電極及び1つ又は複数の第2の電極を含み、前記コントローラが、第1の極性を有する第1の電圧、第2の極性を有する第2の電圧、並びに前記1つ又は複数の第1の電極及び前記1つ又は複数の第2の電極への接地を適用するように構成されている、請求項1又は2に記載の装置。
- 前記複数の電極が、1つ又は複数の第3の電極及び1つ又は複数の第4の電極をさらに含み、前記コントローラが、第1の極性を有する第1の電圧、第2の極性を有する第2の電圧、並びに前記1つ又は複数の第3の電極及び前記1つ又は複数の第4の電極への接地を適用するように構成されている、請求項3に記載の装置。
- 前記コントローラが、前記第1の電圧を前記1つ又は複数の第1の電極に適用し、前記第2の電圧又は接地を前記1つ又は複数の第2の電極に適用して、前記第1の電圧極性設定を設けるように構成されている、請求項3又は4に記載の装置。
- 前記コントローラが、前記第1の電圧を前記1つ又は複数の第1の電極及び前記1つ又は複数の第2の電極のうちの少なくとも1つに適用して、前記第2の電圧極性設定を設けるように構成されている、請求項5に記載の装置。
- 前記コントローラが、前記第1の電圧を前記1つ又は複数の第1の電極及び前記1つ又は複数の第3の電極に適用するように構成され、前記コントローラが、前記第2の電圧を前記1つ又は複数の第2の電極及び前記1つ又は複数の第4の電極に適用して、前記第1の電圧極性設定を設けるように構成されている、請求項4に記載の装置。
- 前記コントローラが、前記第1の電圧を前記1つ又は複数の第1の電極及び前記1つ又は複数の第2の電極に適用するように構成され、前記コントローラが、前記第2の電圧を前記1つ又は複数の第3の電極及び前記1つ又は複数の第4の電極に適用して、前記第2の電圧極性設定を設けるように構成されている、請求項7に記載の装置。
- 前記コントローラが、前記第1の電圧又は前記第2の電圧のみを前記電極アレンジメントに適用して、前記第2の電圧極性設定を設けるように構成されている、請求項7に記載の装置。
- 前記1つ又は複数の第1の電極及び前記1つ又は複数の第2の電極が交互に配置されており、或いは、前記1つ又は複数の第1の電極、前記1つ又は複数の第2の電極、前記1つ又は複数の第3の電極、並びに前記1つ又は複数の第4の電極が交互に配置されている、請求項2又は3に記載の装置。
- 前記引力が、前記第1の電圧極性設定のための第1の基板引力及び第1のマスク引力、並びに前記第2の電圧極性設定のための第2の基板引力及び第2のマスク引力を含み、前記第2のマスク引力は前記第1のマスク引力とは異なる、請求項1から10のいずれか一項に記載の装置。
- 基板上に層を堆積するためのシステムであって、
真空チャンバ、
前記真空チャンバ内の1つ又は複数の堆積材料源、及び
前記真空チャンバ内の請求項1から11のいずれか一項に記載の装置であって、真空堆積処理の間に前記基板を保持するように構成された装置
を含むシステム。 - 基板を保持するための方法であって、
第1の電圧極性設定を電極アレンジメントに適用して、前記基板及びマスクのうちの少なくとも1つに作用する第1の引力を加えることと、
前記第1の電圧極性設定とは異なる第2の電圧極性設定を前記電極アレンジメントに適用して、前記第1の引力とは異なる第2の引力を加えることと
を含む方法。 - 前記第1の電圧極性設定を適用している間に前記基板に対して前記マスクを位置合わせすることと、
前記第2の電圧極性設定を適用している間に前記基板及び前記マスクを保持することと
のうちの少なくとも1つをさらに含む、請求項13に記載の方法。 - 実質的に垂直な配向で前記基板を保持することをさらに含む、請求項13又は14に記載の方法。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2016/080665 WO2018108240A1 (en) | 2016-12-12 | 2016-12-12 | Apparatus for holding a substrate in a vacuum deposition process, system for layer deposition on a substrate, and method for holding a substrate |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020075895A Division JP2020143373A (ja) | 2020-04-22 | 2020-04-22 | 真空堆積処理において基板を保持するための装置、基板上に層を堆積するためのシステム、及び基板を保持するための方法 |
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| Publication Number | Publication Date |
|---|---|
| JP2019502017A true JP2019502017A (ja) | 2019-01-24 |
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| JP2017562273A Ceased JP2019502017A (ja) | 2016-12-12 | 2016-12-12 | 真空堆積処理において基板を保持するための装置、基板上に層を堆積するためのシステム、及び基板を保持するための方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2019502017A (ja) |
| KR (1) | KR102110749B1 (ja) |
| CN (1) | CN108474110B (ja) |
| TW (1) | TWI675115B (ja) |
| WO (1) | WO2018108240A1 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021042467A (ja) * | 2019-09-07 | 2021-03-18 | キヤノントッキ株式会社 | 吸着装置、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法 |
| JP2021075750A (ja) * | 2019-11-07 | 2021-05-20 | 株式会社ジャパンディスプレイ | 蒸着装置、表示装置、および表示装置の作製方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102796879B1 (ko) * | 2018-10-02 | 2025-04-21 | 삼성디스플레이 주식회사 | 증착 장치 |
| KR20220034993A (ko) * | 2020-09-11 | 2022-03-21 | 삼성디스플레이 주식회사 | 증착 장치 및 증착 장치의 마스크 착좌 방법 |
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| JP2000260855A (ja) * | 1999-03-10 | 2000-09-22 | Mitsubishi Electric Corp | ウェハ処理装置 |
| JP2012059858A (ja) * | 2010-09-08 | 2012-03-22 | Ulvac Japan Ltd | 静電吸着装置 |
| JP2013173964A (ja) * | 2012-02-23 | 2013-09-05 | Hitachi Zosen Corp | 電子ビーム蒸着装置 |
| JP2013194294A (ja) * | 2012-03-21 | 2013-09-30 | Sumitomo Electric Ind Ltd | 機能性薄膜の成膜装置および成膜方法 |
| WO2015042302A1 (en) * | 2013-09-20 | 2015-03-26 | Applied Materials, Inc. | Substrate carrier with integrated electrostatic chuck |
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| CN1207939C (zh) * | 1999-09-29 | 2005-06-22 | 东京电子株式会社 | 多区电阻加热器 |
| JP2005136025A (ja) * | 2003-10-29 | 2005-05-26 | Trecenti Technologies Inc | 半導体製造装置、半導体装置の製造方法及びウエハステージ |
| JP2005285825A (ja) * | 2004-03-26 | 2005-10-13 | Advantest Corp | 静電チャック及び静電チャックによる基板固定方法 |
| CN103797598A (zh) * | 2011-09-13 | 2014-05-14 | 电气化学工业株式会社 | Led发光元件保持基板用包覆材料及其制造方法 |
| US10153191B2 (en) * | 2014-05-09 | 2018-12-11 | Applied Materials, Inc. | Substrate carrier system and method for using the same |
-
2016
- 2016-12-12 JP JP2017562273A patent/JP2019502017A/ja not_active Ceased
- 2016-12-12 CN CN201680077022.5A patent/CN108474110B/zh active Active
- 2016-12-12 WO PCT/EP2016/080665 patent/WO2018108240A1/en not_active Ceased
- 2016-12-12 KR KR1020177036945A patent/KR102110749B1/ko active Active
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- 2017-12-07 TW TW106142975A patent/TWI675115B/zh not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000260855A (ja) * | 1999-03-10 | 2000-09-22 | Mitsubishi Electric Corp | ウェハ処理装置 |
| JP2012059858A (ja) * | 2010-09-08 | 2012-03-22 | Ulvac Japan Ltd | 静電吸着装置 |
| JP2013173964A (ja) * | 2012-02-23 | 2013-09-05 | Hitachi Zosen Corp | 電子ビーム蒸着装置 |
| JP2013194294A (ja) * | 2012-03-21 | 2013-09-30 | Sumitomo Electric Ind Ltd | 機能性薄膜の成膜装置および成膜方法 |
| WO2015042302A1 (en) * | 2013-09-20 | 2015-03-26 | Applied Materials, Inc. | Substrate carrier with integrated electrostatic chuck |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021042467A (ja) * | 2019-09-07 | 2021-03-18 | キヤノントッキ株式会社 | 吸着装置、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法 |
| JP7007688B2 (ja) | 2019-09-07 | 2022-01-25 | キヤノントッキ株式会社 | 吸着装置、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法 |
| JP2021075750A (ja) * | 2019-11-07 | 2021-05-20 | 株式会社ジャパンディスプレイ | 蒸着装置、表示装置、および表示装置の作製方法 |
| JP7406958B2 (ja) | 2019-11-07 | 2023-12-28 | 株式会社ジャパンディスプレイ | 蒸着装置および表示装置の作製方法 |
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| Publication number | Publication date |
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| CN108474110B (zh) | 2020-10-20 |
| TWI675115B (zh) | 2019-10-21 |
| TW201833354A (zh) | 2018-09-16 |
| KR20180082327A (ko) | 2018-07-18 |
| WO2018108240A1 (en) | 2018-06-21 |
| KR102110749B1 (ko) | 2020-05-14 |
| CN108474110A (zh) | 2018-08-31 |
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