JP2542003Y2 - Optical semiconductor device module - Google Patents
Optical semiconductor device moduleInfo
- Publication number
- JP2542003Y2 JP2542003Y2 JP1988151506U JP15150688U JP2542003Y2 JP 2542003 Y2 JP2542003 Y2 JP 2542003Y2 JP 1988151506 U JP1988151506 U JP 1988151506U JP 15150688 U JP15150688 U JP 15150688U JP 2542003 Y2 JP2542003 Y2 JP 2542003Y2
- Authority
- JP
- Japan
- Prior art keywords
- optical semiconductor
- light
- semiconductor device
- wavelength
- wavelength filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Optical Couplings Of Light Guides (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
【考案の詳細な説明】 〔産業上の利用分野〕 この考案は,光通信,光計測,光情報処理に使用する
光半導体素子モジユールに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial application field] The present invention relates to an optical semiconductor device module used for optical communication, optical measurement, and optical information processing.
〔従来の技術〕 2波の波長多重通信をするためには,波長λ1の光を
発振する発光モジユールと,波長λ2の光を発振する発
光モジユールと,伝送路となる1本の光フアイバと,波
長λ1の光と波長λ2の光を選択的に分離または合流さ
せる2つの合波分波器と,波長λ1の光を受ける受光モ
ジユールと,波長γ2の光を受ける受光モジユールとが
必要である。To the WDM communication of [Prior Art] 2 wave has a light emitting modules that oscillates light of wavelength lambda 1, the light emitting modules that oscillates light of wavelength lambda 2, 1 pieces of optical fiber comprising a transmission line And two multiplexer / demultiplexers for selectively separating or merging light of wavelength λ 1 and light of wavelength λ 2, a light receiving module for receiving light of wavelength λ 1 , and a light receiving module for receiving light of wavelength γ 2 Is necessary.
通信における誤り率を低くする為に,前記合波分波器
は近端漏話量−50dB程度と遠端漏話量−30dB程度の性能
を得ることが必要で,誘電体多層膜からなる波長フイル
タ板と,前記波長フイルタ板への光の入射光をコリメー
トさせるレンズとを備えるので,高価であった。In order to reduce the error rate in communication, the multiplexer / demultiplexer needs to obtain near-end crosstalk of about -50 dB and far-end crosstalk of about -30 dB, and a wavelength filter made of a dielectric multilayer film. And a lens for collimating the light incident on the wavelength filter plate, which is expensive.
そこで,最近,低価格のフアイバ融着カツプラーと波
長フイルタを内蔵した受光モジユールとの構成を,前記
合波分波器と受光モジユールとの構成のかわりに使用す
る場合がある。また,波長λ1の発光素子としてレーザ
ダイオードを使用する場合,自然発光成分のうちの波長
λ2の成分を減衰させる波長フイルタ内蔵の発光モジユ
ールが必要な場合もある。Therefore, recently, a configuration of a low-cost fiber fusion coupler and a light receiving module having a built-in wavelength filter may be used instead of the configuration of the multiplexer / demultiplexer and the light receiving module. Also, when using a laser diode as a light emitting device having a wavelength lambda 1, may be required wavelength filter built emitting modules attenuating the wavelength lambda 2 of the component of the spontaneous emission component.
ここでは,光半導体モジユールとして,波長フイルタ
内蔵の受光モジユールを説明する。Here, a light receiving module having a built-in wavelength filter will be described as an optical semiconductor module.
第2図は例えば波長λ1を受光する従来の光半導体モ
ジユールを示す断面図であり,図において,(1)は光
フアイバ,(2)は誘電体多膜層からなる波長フイルタ
板,(3)はレンズ,(4)はキヤツプ,(5)はガラ
ス板,(6)はホトダイオード,(7)はステム,
(8)はリード,(9)は気密用ガラス,(10)は筐体
である。Figure 2 is a sectional view of a conventional optical semiconductor modules for receiving the wavelength lambda 1 for example, in FIG., (1) an optical fiber, (2) the wavelength filter plate made of a dielectric multi-film layer, (3 ) Is a lens, (4) is a cap, (5) is a glass plate, (6) is a photodiode, (7) is a stem,
(8) is a lead, (9) is a hermetic glass, and (10) is a housing.
波長フイルタ板(2)は湿度による特性の変化を防ぐ
ための誘電体多層膜面を光フアイバ(1)側にして透明
な接着剤で接着される。また,ホトダイオード(6)は
湿度による暗電流の増加を防ぐ為,キヤツプ(4)とガ
ラス(5)を低融点ガラスで融着することと,ステム
(7)とリード(8)を気密用ガラス(9)で融着する
ことと,キヤツプ(4)とステム(7)を溶接すること
とにより,気密がとられる。また,光フアイバ(1)と
フイルタ板(2)とレンズ(3)とガラス板(5)とホ
トダイオード(6)とは光フアイバ(1)のコアから出
射した光がホトダイオードの受光面に入射する様に配置
され,筐体(10)に固定される。The wavelength filter plate (2) is bonded with a transparent adhesive so that the surface of the dielectric multilayer film for preventing a change in characteristics due to humidity is directed to the optical fiber (1). The photodiode (6) is made by fusing the cap (4) and the glass (5) with a low-melting glass in order to prevent an increase in dark current due to humidity, and sealing the stem (7) and the lead (8) with glass for airtightness. Airtightness is obtained by fusing in (9) and welding the cap (4) and the stem (7). The optical fiber (1), the filter plate (2), the lens (3), the glass plate (5), and the photodiode (6) are such that light emitted from the core of the optical fiber (1) is incident on the light receiving surface of the photodiode. And fixed to the housing (10).
次に動作について説明する。波長多重通信をする場
合,光フアイバ(1)から出射する光には波長λ1の光
と波長λ2の光とが含まれる。波長λ2の光は波長フイ
ルタ板(2)により反射され,波長λ1の光は波長フイ
ルタ板(2)を透過する。次に波長λ1の光はレンズ
(3)により集束され,ガラス板(5)を透過したの
ち,ホトダイオード(6)の受光面へ入射して電気に変
換され,リード(8)から電気信号を出力する。Next, the operation will be described. If the WDM communication, the light emitted from the optical fiber (1) include the wavelength lambda 1 light and wavelength lambda 2 of light. Light of the wavelength lambda 2 is reflected by the wavelength filter plate (2), light of the wavelength lambda 1 is transmitted through the wavelength filter plate (2). Next, the light of wavelength λ 1 is converged by the lens (3), passes through the glass plate (5), is incident on the light receiving surface of the photodiode (6), is converted into electricity, and converts an electric signal from the lead (8). Output.
従来の光半導体素子モジユールは以上のように構成さ
れているので,波長フイルタの誘電体多層膜面を湿度の
高い空気層から遮断しなければならず,接着剤で接着す
ることは必要で、また、その接着工程に費用がかかり高
価となるなどの課題があつた。Since the conventional optical semiconductor device module is configured as described above, the surface of the dielectric multilayer film of the wavelength filter must be shielded from the humid air layer, and it is necessary to adhere with an adhesive. However, there is a problem that the bonding process is expensive and expensive.
この考案は上記のような課題を解消するためになされ
たもので,波長フイルタの誘電体多層膜面を湿度の高い
空気層から遮断できるとともに,接着工程を必要としな
い光半導体素子モジユールを得ることを目的とする。The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide an optical semiconductor device module that can shield a dielectric multilayer film surface of a wavelength filter from a humid air layer and does not require a bonding process. With the goal.
この考案に係る光半導体素子モジユールは,キヤツプ
に融着されたガラス板の光半導体素子側の面に誘電体多
層膜を蒸着し波長フイルタ板を製作するとともに,光半
導体素子を上記キヤツプと波長フイルタ板とで気密構造
としたものである。The optical semiconductor device module according to the present invention is to produce a wavelength filter plate by depositing a dielectric multilayer film on the surface of the glass plate fused to the cap on the optical semiconductor device side, and to combine the optical semiconductor device with the above-mentioned cap and wavelength filter. It is an airtight structure with a board.
〔作用〕 この考案における光半導体素子モジユールは,誘電体
多層膜面が湿度の低い窒素等の気体により気密され,フ
イルタ特性の湿度による変化が防がれる。[Operation] In the optical semiconductor device module according to the present invention, the dielectric multilayer film surface is hermetically sealed by a gas such as nitrogen having a low humidity, so that a change in filter characteristics due to humidity is prevented.
以下,この考案の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第1図において,キヤツプ(4)にガラス板を低融点
ガラスで融着し,次に,ホトダイオード(6)側の面に
誘電体多層膜を蒸着し波長フイルタ板(2)を製作す
る。ホトダイオード(6)の湿度による暗電流の増加を
防ぐためと,波長フイルタ板(2)の湿度による特性の
変化を防ぐために,湿度の低い窒素等の気体雰囲気中
で,キヤツプ(4)とステム(7)を溶接し,気密構造
とする。In FIG. 1, a glass plate is fused to a cap (4) with low-melting glass, and then a dielectric multilayer film is deposited on the photodiode (6) side to produce a wavelength filter plate (2). In order to prevent the dark current from increasing due to the humidity of the photodiode (6), and to prevent the characteristics of the wavelength filter plate (2) from changing due to the humidity, the cap (4) and the stem (4) are placed in a low humidity gas atmosphere such as nitrogen. 7) is welded to form an airtight structure.
次に動作について説明する。波長多重通信をする場
合,光フアイバ(1)から出射する光には波長λ1の光
と波長λ2の光とが含まれる。光フアイバ(1)から出
射した波長λ2の光はレンズ(3)により集束されたの
ち波長フイルタ(2)により反射される。また光フアイ
バ(1)から出射した波長λ1の光はレンズ(3)によ
り集束され,波長フイルタ(2)を透過したのち,ホト
ダイオード(6)の受光面へ入射して電気に変換され,
リード(8)から電気信号を出力する。Next, the operation will be described. If the WDM communication, the light emitted from the optical fiber (1) include the wavelength lambda 1 light and wavelength lambda 2 of light. Is reflected by the wavelength filter after being focused (2) with light having a wavelength lambda 2 emitted from optical fiber (1) is a lens (3). The light of the wavelength lambda 1 emitted from optical fiber (1) is focused by the lens (3), after having passed through the wavelength filter (2) is converted to an electrical incident to the light receiving surface of the photodiode (6),
An electric signal is output from the lead (8).
なお,上記実施例では光半導体素子としてホトダイオ
ードを設けたものを示したが,光半導体素子はアバラン
シユホトダイオードや受光素子を備えた光半導体集積回
路でもよい。In the above embodiment, a photodiode is provided as an optical semiconductor element. However, the optical semiconductor element may be an optical semiconductor integrated circuit having an avalanche photodiode or a light receiving element.
また,上記実施例では,受光モジユールの場合につい
て説明したが,発光モジユールでもよく,光半導体素子
はレーザダイオードや面発光ダイオードや端面発光ダイ
オードや受光素子を備えた光半導体集積回路でもよく,
上記実施例と同様の効果を奏する。In the above embodiment, the case of the light receiving module has been described. However, the light emitting module may be used, and the optical semiconductor element may be an optical semiconductor integrated circuit having a laser diode, a surface light emitting diode, an edge light emitting diode, or a light receiving element.
The same effects as in the above embodiment can be obtained.
また,上記実施例では,光フアイバが備えられた場合
について示したが,光フアイバコネクタが取付け可能な
レセプタクルを備えた光半導体素子モジュールであつて
もよく,上記実施例と同様の効果を奏する。Further, in the above-described embodiment, the case where the optical fiber is provided is described. However, the optical semiconductor element module may be provided with a receptacle to which the optical fiber connector can be attached, and the same effects as in the above-described embodiment can be obtained.
以上のように,この考案によればキャップ、ステム、
光透過板および湿度の低い窒素などの気体により形成さ
れた1つの気密構造内に、誘電体多層膜を上記光透過板
の光半導体素子との対向面に蒸着して構成した波長フィ
ルタ板を設けることにより湿度による波長フィルタ板の
特性変化を防止することができるとともに、誘電体多層
膜面を従来のように接着剤で接着する必要がなく、安価
な光半導体素子モジュールが得られる効果を有する。As described above, according to the present invention, the cap, the stem,
A light transmitting plate and a wavelength filter plate formed by vapor-depositing a dielectric multilayer film on a surface of the light transmitting plate facing the optical semiconductor element are provided in one hermetic structure formed of a gas such as nitrogen having a low humidity. Thus, it is possible to prevent the characteristic change of the wavelength filter plate due to humidity, and it is possible to obtain an inexpensive optical semiconductor element module without having to bond the dielectric multilayer film surface with an adhesive unlike the related art.
第1図はこの考案の一実施例による光半導体モジユール
を示す断面側面図,第2図は従来の光半導体素子モジユ
ールを示す断面図である。 (1)は光フアイバ,(2)は波長フイルタ板,(3)
はレンズ,(4)はキヤツプ,(5)はガラス板,
(6)はホトダイオード,(7)はステム,(8)はリ
ード,(9)は気密様ガラス,(10)は筐体である。 なお,図中,同一符号は同一,又は相当部分を示す。FIG. 1 is a sectional side view showing an optical semiconductor module according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional optical semiconductor element module. (1) is an optical fiber, (2) is a wavelength filter plate, (3)
Is a lens, (4) is a cap, (5) is a glass plate,
(6) is a photodiode, (7) is a stem, (8) is a lead, (9) is an airtight glass, and (10) is a housing. In the drawings, the same reference numerals indicate the same or corresponding parts.
Claims (1)
記ステムに取付けられ、上記光半導体素子と対向する位
置に光透過板を有するキャップとを具備した光半導体素
子モジュールにおいて、上記キャップ、上記ステム、上
記光透過板および湿度の低い窒素などの気体により形成
された1つの気密構造と、上記光透過板の上記光半導体
素子と対向する面に誘電体多層膜を蒸着して構成した波
長フィルタ板とを設けたことを特徴とする光半導体素子
モジュール。1. An optical semiconductor device module comprising: an optical semiconductor device attached to a stem; and a cap attached to the stem and having a light transmitting plate at a position facing the optical semiconductor device. A stem, the light transmitting plate and one hermetic structure formed of a gas such as nitrogen having a low humidity, and a wavelength filter formed by depositing a dielectric multilayer film on a surface of the light transmitting plate facing the optical semiconductor element. An optical semiconductor element module, comprising: a plate;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988151506U JP2542003Y2 (en) | 1988-11-21 | 1988-11-21 | Optical semiconductor device module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988151506U JP2542003Y2 (en) | 1988-11-21 | 1988-11-21 | Optical semiconductor device module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0272563U JPH0272563U (en) | 1990-06-01 |
| JP2542003Y2 true JP2542003Y2 (en) | 1997-07-23 |
Family
ID=31425612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988151506U Expired - Lifetime JP2542003Y2 (en) | 1988-11-21 | 1988-11-21 | Optical semiconductor device module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2542003Y2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009053460A (en) * | 2007-08-28 | 2009-03-12 | Ntt Electornics Corp | Wavelength filter |
| EP3298453A4 (en) * | 2015-05-19 | 2019-01-23 | Newport Corporation | Optical analysis system with optical conduit light delivery |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6028148B2 (en) * | 1976-01-29 | 1985-07-03 | 株式会社東芝 | photodiode |
| JPS60247208A (en) * | 1984-05-23 | 1985-12-06 | Hitachi Ltd | Semiconductor photodetector |
-
1988
- 1988-11-21 JP JP1988151506U patent/JP2542003Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0272563U (en) | 1990-06-01 |
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