JP3142054B2 - Chemical vapor deposition equipment - Google Patents
Chemical vapor deposition equipmentInfo
- Publication number
- JP3142054B2 JP3142054B2 JP08322506A JP32250696A JP3142054B2 JP 3142054 B2 JP3142054 B2 JP 3142054B2 JP 08322506 A JP08322506 A JP 08322506A JP 32250696 A JP32250696 A JP 32250696A JP 3142054 B2 JP3142054 B2 JP 3142054B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- nozzle
- film
- vapor deposition
- chemical vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims description 69
- 238000010438 heat treatment Methods 0.000 claims description 33
- 238000001816 cooling Methods 0.000 claims description 20
- 239000002994 raw material Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 9
- 238000007599 discharging Methods 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims description 4
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 4
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 4
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 4
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 4
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 42
- 239000007789 gas Substances 0.000 description 34
- 239000013078 crystal Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- -1 and for example Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000002627 tracheal intubation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は化学気相堆積装置
（ＣＶＤ装置）、特に高温の成膜条件下においても良質
な単結晶膜を均一な膜厚で形成することができる化学気
相堆積装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition apparatus (CVD apparatus), and more particularly to a chemical vapor deposition apparatus capable of forming a high-quality single crystal film with a uniform film thickness even under high-temperature film forming conditions. It is about.
【０００２】[0002]
【従来の技術】ＡｌＮは高絶縁性特性、不活性な特性、
圧電特性、発光特性等を有しており、種々の用途に応用
することが考えられている。例えば、高絶縁性及び不活
性な特性を利用して半導体デバイスのパッシベーション
膜に利用されている。また、圧電性を利用して弾性表面
波フィルタへの応用も考えられている。2. Description of the Related Art AlN has high insulating properties, inactive properties,
It has piezoelectric characteristics, light-emitting characteristics, and the like, and is considered to be applied to various uses. For example, it is used for a passivation film of a semiconductor device by utilizing high insulating properties and inert characteristics. Further, application to a surface acoustic wave filter using piezoelectricity has been considered.
【０００３】ＡｌＮ薄膜を形成する方法として、例えば
特開平２−１４１４９５号公報に記載されているよう
に、有機金属化学気相堆積法（ＭＯ−ＣＶＤ法）が既知
である。このＭＯ−ＣＶＤ法では、原料ガスとしてアン
モニアガスとトリメチルアルミニウム（ＴＭＡ）ガスを
用い、これら原料ガスを個別のノズルを介して高温度に
維持されている基板に向けて供給し、基板の熱を利用し
て原料ガスを気相反応させて基板上にＡｌＮを堆積させ
ている。As a method for forming an AlN thin film, a metal organic chemical vapor deposition (MO-CVD) method is known, for example, as described in Japanese Patent Application Laid-Open No. 2-141495. In this MO-CVD method, ammonia gas and trimethylaluminum (TMA) gas are used as source gases, and these source gases are supplied to the substrate maintained at a high temperature through individual nozzles, and the heat of the substrate is reduced. The raw material gas is used to cause a gas phase reaction to deposit AlN on the substrate.
【０００４】この化学気相堆積装置として、成膜される
べき基板表面の上方から原料ガスを基板に向けて供給す
る縦型化学気相堆積装置及び基板表面に平行な方向から
原料ガスを供給する横型化学気相堆積装置がある。横型
の化学気相堆積装置は、均一な膜厚で良質なＡｌＮ薄膜
を堆積することができ、ＳＡＷデバイスのような良質な
単結晶膜を必要とするデバイスを製造するために極めて
有用である。As this chemical vapor deposition apparatus, a vertical type chemical vapor deposition apparatus for supplying a raw material gas toward a substrate from above a substrate surface on which a film is to be formed, and supplying a raw material gas from a direction parallel to the substrate surface. There is a horizontal chemical vapor deposition apparatus. A horizontal chemical vapor deposition apparatus can deposit a high-quality AlN thin film with a uniform film thickness, and is extremely useful for manufacturing a device requiring a high-quality single crystal film such as a SAW device.
【０００５】[0005]
【発明が解決しようとする課題】ＡｌＮ薄膜を半導体デ
バイスのパッシベーション膜として形成する場合、その
膜厚及び品質について厳格な制約が課せられておらず、
しかもその結晶性についても多結晶状態でも十分に使用
できるため、ＡｌＮ薄膜の成膜は比較的低い温度で行な
われている。従って、パッシベーション層としてＡｌＮ
膜を形成する場合比較的容易に成膜することができる。
しかしながら、ＡｌＮ膜をＳＡＷデバイスの圧電膜とし
て利用する場合良質で均一な膜厚の単結晶膜を形成する
必要があるため、例えば１１５０℃程度の高温度条件下
で成膜しなければならず、実際に成膜する際種々の問題
点が生じてしまう。When an AlN thin film is formed as a passivation film for a semiconductor device, no strict restrictions are imposed on its thickness and quality.
In addition, the AlN thin film is formed at a relatively low temperature because its crystallinity can be sufficiently used even in a polycrystalline state. Therefore, AlN is used as a passivation layer.
When forming a film, it can be formed relatively easily.
However, when an AlN film is used as a piezoelectric film of a SAW device, it is necessary to form a single crystal film having a good quality and a uniform thickness. Therefore, the AlN film must be formed under a high temperature condition of about 1150 ° C. Various problems arise when actually forming a film.
【０００６】例えば、原料ガスであるアンモニアとＴＭ
Ａは互いに高い反応性を有しているため、良質な単結晶
膜を形成するためには成膜されるべき基板に向けて原料
ガスを供給するノズルを基板に近接して配置する必要が
ある。このためアンモニアガスとＴＭＡガスとが接触し
た瞬時に反応が生じてしまい、原料ガスが基板に到達す
る前に消費される不具合がある。また、ノズルにＡｌＮ
膜が堆積してしまう不都合も生じている。このような不
所望な反応が生ずると、均一な膜厚の単結晶膜の形成に
大きな障害となり、最終的に製造されるデバイスの特性
にも悪影響を及ぼしてしまう。For example, the raw material gas ammonia and TM
Since A has high reactivity with each other, it is necessary to arrange a nozzle for supplying a source gas toward a substrate to be formed close to the substrate in order to form a high-quality single crystal film. . For this reason, a reaction occurs immediately when the ammonia gas and the TMA gas come into contact with each other, and there is a problem that the source gas is consumed before reaching the substrate. In addition, AlN
There is also a disadvantage that the film is deposited. When such an undesired reaction occurs, the formation of a single-crystal film having a uniform thickness becomes a great obstacle, and the characteristics of a device finally manufactured are adversely affected.
【０００７】従って、本発明の目的は、高温条件におい
ても膜厚が均一でしかも良質な単結晶膜を形成すること
ができる化学気相堆積装置を提供することにある。Accordingly, it is an object of the present invention to provide a chemical vapor deposition apparatus capable of forming a high-quality single crystal film having a uniform thickness even under high temperature conditions.
【０００８】[0008]
【課題を解決するための手段並びに作用】本発明による
化学気相堆積装置は、成膜されるべき基板を支持するサ
セプタと、基板を所定の温度に加熱する加熱手段と、前
記基板に向けて原料ガスを放出する出口開口を有し、基
板の膜形成すべき表面にほぼ平行な方向から基板に向け
て原料ガスを供給するノズルと、前記加熱手段から放射
される赤外線を遮蔽する遮蔽手段と、前記ノズルのほぼ
全体を冷却する冷却手段とを具え、原料ガスが基板に到
達する前に反応するのを防止するように構成したことを
特徴とする。SUMMARY OF THE INVENTION A chemical vapor deposition apparatus according to the present invention comprises a susceptor for supporting a substrate on which a film is to be formed, heating means for heating the substrate to a predetermined temperature, and A nozzle having an outlet opening for discharging the source gas, supplying the source gas toward the substrate from a direction substantially parallel to the surface of the substrate on which the film is to be formed, and a shielding unit for shielding infrared rays emitted from the heating unit; And cooling means for cooling substantially the entire nozzle, so as to prevent the source gas from reacting before reaching the substrate.
【０００９】本発明者が、アンモニアガスとＴＭＡガス
とが基板表面に到達する前に反応をおこす原因について
種々の実験及び解析を行なった結果、基板に向けて原料
ガスを供給するノズルが高温に加熱されるため、原料ガ
スがノズルから放出された瞬時に化学反応を起してしま
うことが原因であることが判明した。すなわち、アンモ
ニアとＴＭＡとは極めて高い反応性を有しているため、
これら原料ガスを個別に供給するためのノズルを基板に
近づける必要がある。一方、良質な単結晶を堆積させる
ためには、基板の温度を１１５０℃程度まで高温に維持
する必要がある。この結果、基板及び基板用の加熱手段
からの輻射された赤外光によりノズルが高温に加熱され
てしまい、この結果原料ガスがノズルを通過する間に加
熱されノズルから出射した瞬時に反応してしまう。The inventor conducted various experiments and analyzes on the cause of the reaction between the ammonia gas and the TMA gas before reaching the substrate surface. As a result, the nozzle for supplying the source gas toward the substrate was heated to a high temperature. It has been found that the cause is that a chemical reaction occurs instantaneously when the raw material gas is released from the nozzle due to heating. That is, since ammonia and TMA have extremely high reactivity,
It is necessary to bring nozzles for individually supplying these source gases close to the substrate. On the other hand, in order to deposit a high-quality single crystal, the temperature of the substrate needs to be maintained at a high temperature of about 1150 ° C. As a result, the nozzle is heated to a high temperature by the infrared light radiated from the substrate and the heating means for the substrate, and as a result, the raw material gas is heated while passing through the nozzle and reacts instantaneously when emitted from the nozzle. I will.
【００１０】本発明は、上述した認識に基き、ノズルに
冷却手段を設ける。ノズルに冷却手段を設けることによ
り、原料ガスがノズルを通過する間に加熱するのが防止
され、原料ガスが基板上に到達する前に反応をおこすこ
とを抑制することができる。According to the present invention, a cooling means is provided in the nozzle based on the above recognition. By providing the nozzle with the cooling means, it is possible to prevent the source gas from being heated while passing through the nozzle, and to suppress a reaction before the source gas reaches the substrate.
【００１１】冷却方法として、熱伝導のよい金属材料、
例えばステンレススチール、銅、鉄のような金属材料の
パイプをノズル全体に密着させて巻き付け、この金属パ
イプの内部に冷却媒体例えば水を供給することによりノ
ズル全体を冷却することができる。パイプとノズルの接
触面積はできるだけ大きくすることが望ましい。また内
部に流す媒体の温度はできるだけ低く、また流速はでき
るだけ速くすることがノズルを効率的に冷却する上で好
ましい。ノズルが加熱されるのを防止するのに極めて有
益である。As a cooling method, a metal material having good heat conductivity,
For example, a pipe made of a metal material such as stainless steel, copper, or iron can be closely wound around the entire nozzle, and a cooling medium such as water can be supplied into the metal pipe to cool the entire nozzle. It is desirable that the contact area between the pipe and the nozzle be as large as possible. Further, it is preferable that the temperature of the medium flowing inside is as low as possible and the flow velocity is as high as possible in order to efficiently cool the nozzle. It is very beneficial to prevent the nozzle from being heated.
【００１２】本発明による化学気相堆積装置は、成膜さ
れるべき基板を支持するサセプタと、基板を所定の温度
に加熱する加熱手段と、前記基板に向けて原料ガスを放
出する出口開口を有し、基板の膜形成すべき表面にほぼ
平行な方向から基板に向けて原料ガスを供給するノズル
と、前記加熱手段から放射される赤外線を遮蔽する遮蔽
手段とを具える化学気相堆積装置装置において、前記ノ
ズルをサファイア、フッ化カルシウム、フッ化マグネシ
ウムまたはフッ化バリウムで構成したことを特徴とす
る。A chemical vapor deposition apparatus according to the present invention comprises a susceptor for supporting a substrate on which a film is to be formed, heating means for heating the substrate to a predetermined temperature, and an outlet opening for discharging a source gas toward the substrate. A chemical vapor deposition apparatus comprising: a nozzle for supplying a source gas toward a substrate from a direction substantially parallel to a surface of a substrate on which a film is to be formed; and a shielding unit for shielding infrared rays emitted from the heating unit. The apparatus is characterized in that the nozzle is made of sapphire, calcium fluoride, magnesium fluoride or barium fluoride.
【００１３】このように、ノズル自体を赤外域での吸収
係数が小さい材料であるサファイア、フッ化カルシウ
ム、フッ化マグネシウムまたはフッ化バリウムで構成す
れば、基板及び加熱手段から放出される赤外光がノズル
内部で吸収されるのが防止され、ノズルの昇温が防止さ
れる。ここで、従来のノズル材料として用いられている
石英ガラスの８０％以上の透過帯域は０．１８〜２．５
（μｍ）である。これに対して、サファイア、フッ化カ
ルシウム、フッ化マグネシウム及びフッ化バリウムの８
０以上の透過帯域は、それぞれ０．２１〜０．５０，
０．１８〜６．５，０．１８〜８．０及び０．１８〜１
０．０（μｍ）である。従って、これら透過帯域の広い
材料を用いれば、吸収される赤外線波長が減少し、ノズ
ルの昇温を防止することができる。If the nozzle itself is made of sapphire, calcium fluoride, magnesium fluoride or barium fluoride, which is a material having a small absorption coefficient in the infrared region, the infrared light emitted from the substrate and the heating means Is prevented from being absorbed inside the nozzle, and the temperature of the nozzle is prevented from rising. Here, the transmission band of 80% or more of quartz glass used as a conventional nozzle material is 0.18 to 2.5.
(Μm). On the other hand, sapphire, calcium fluoride, magnesium fluoride and barium fluoride
The transmission bands of 0 or more are 0.21 to 0.50, respectively.
0.18-6.5, 0.18-8.0 and 0.18-1
0.0 (μm). Therefore, if these materials having a wide transmission band are used, the wavelength of infrared light to be absorbed is reduced, and the temperature rise of the nozzle can be prevented.
【００１４】本発明による化学気相堆積装置は、成膜さ
れるべき基板を支持するサセプタと、基板を所定の温度
に加熱する加熱手段と、前記基板に向けて原料ガスを放
出する出口開口を有し、基板の膜形成すべき表面にほぼ
平行な方向から基板に向けて原料ガスを供給するノズル
と、前記加熱手段から放射される赤外線を遮蔽する遮蔽
手段とを具える化学気相堆積装置において、前記ノズル
に赤外光を反射する反射材料層を形成したことを特徴と
する。A chemical vapor deposition apparatus according to the present invention comprises a susceptor for supporting a substrate on which a film is to be formed, a heating means for heating the substrate to a predetermined temperature, and an outlet opening for discharging a source gas toward the substrate. A chemical vapor deposition apparatus comprising: a nozzle for supplying a source gas toward a substrate from a direction substantially parallel to a surface of a substrate on which a film is to be formed; and a shielding unit for shielding infrared rays emitted from the heating unit. Wherein a reflective material layer that reflects infrared light is formed on the nozzle.
【００１５】ノズルが昇温する大きな原因は、基板及び
加熱手段からの輻射熱である。従って、ノズルの先端付
近に赤外光を反射する反射材料層を形成すれば、基板か
らの赤外光の吸収量が低減され、この結果ノズルの昇温
が防止される。A major cause of the temperature rise of the nozzle is radiant heat from the substrate and the heating means. Therefore, if a reflective material layer that reflects infrared light is formed near the tip of the nozzle, the amount of infrared light absorbed from the substrate is reduced, and as a result, the temperature of the nozzle is prevented from rising.
【００１６】[0016]
【発明の実施の形態】図１は本発明による気相堆積装置
の一例の構成を示す線図的断面図である。本例では、サ
ファイヤ基板上にＡｌＮの単結晶膜を形成する例につい
て説明する。成膜すべき基板１をサセプタ２上に載置す
る。サセプタ２の下側に加熱手段である抵抗加熱体３を
配置し、この抵抗加熱体３により基板１を１１５０℃に
加熱する。サセプタ２及び抵抗加熱体３の周囲を包囲す
るように遮蔽体４を配置し、サセプタ及び抵抗加熱体か
ら放射された赤外光を閉じ込める。このように、円周状
の遮蔽部材を設けることによりサセプタ及び抵抗加熱体
から放射された赤外光を一層有効に閉じ込めることがで
きる。FIG. 1 is a schematic sectional view showing the structure of an example of a vapor deposition apparatus according to the present invention. In this example, an example in which an AlN single crystal film is formed on a sapphire substrate will be described. A substrate 1 on which a film is to be formed is placed on a susceptor 2. A resistance heating element 3 serving as a heating means is arranged below the susceptor 2, and the substrate 1 is heated to 1150 ° C. by the resistance heating element 3. The shielding body 4 is arranged so as to surround the susceptor 2 and the resistance heating body 3 to confine infrared light emitted from the susceptor and the resistance heating body. As described above, by providing the circumferential shielding member, the infrared light emitted from the susceptor and the resistance heater can be more effectively confined.
【００１７】内挿管５の内側に原料ガスを供給するため
のノズル６を配置する。ノズル６は第１及び第２のノズ
ル６ａ及び６ｂを有し、これらノズルは基板１の膜形成
面と平行に延在する。第１のノズル６ａからアンモニア
ガスを供給し、第２のノズル６ｂからＴＭＡガスを供給
する。これら原料ガスを放出するノズル６に冷却手段７
を結合する。冷却手段７は、ステンレススチールのパイ
プ７ａを有し、このパイプの内部に水温約２０℃の水を
循環させて水冷方式によりノズル６を冷却する。これに
より、サセプタ２及び抵抗加熱体３から放射される赤外
光により、装置の動作中にノズル６が高温度に昇温する
のが防止される。尚、水冷パイプ７ａはノズル６のほぼ
全長に亘って巻装してノズル６のほぼ全体を冷却する。A nozzle 6 for supplying a raw material gas is disposed inside the inner tube 5. The nozzle 6 has first and second nozzles 6a and 6b, and these nozzles extend parallel to the film forming surface of the substrate 1. Ammonia gas is supplied from the first nozzle 6a, and TMA gas is supplied from the second nozzle 6b. A cooling means 7 is provided on the nozzle 6 for discharging the raw material gas.
To join. The cooling means 7 has a stainless steel pipe 7a, in which water having a water temperature of about 20 ° C. is circulated to cool the nozzle 6 by a water cooling method. This prevents the nozzle 6 from rising to a high temperature during operation of the apparatus due to infrared light emitted from the susceptor 2 and the resistance heater 3. The water cooling pipe 7a is wound over substantially the entire length of the nozzle 6 to cool substantially the entire nozzle 6.
【００１８】サセプタ２、抵抗加熱体３、遮蔽体４、内
挿管５及びノズル６はチャンバ８内に収納する。そして
チャンバ８の外周には水冷ジャケット９ａ，９ｂ及び９
ｃを配置する。The susceptor 2, the resistance heater 3, the shield 4, the insertion tube 5 and the nozzle 6 are housed in a chamber 8. Water cooling jackets 9a, 9b and 9
Arrange c.
【００１９】原料ガスの供給と共に、ノズル６と内挿管
５との間の空間及び内挿管とチャンバ８との間の空間に
キャリヤガスを送出する。これらキャリヤガスは、水
素、窒素、アルゴン等の不活性ガスとすることができ
る。原料ガスはノズル６の出口開口６ｃから放出され、
成膜すべき基板１の堆積面とほぼ平行に基板に向けて移
動し、基板１の堆積向上において基板からの熱により加
熱されて反応をおこし、基板１上に単結晶膜が形成され
る。尚、基板の全面に亘って均一な膜を形成するため、
基板及びサセプタは図示しない駆動装置により回転させ
るものとする。尚、反応しなかった原料ガス及びキャリ
ヤガスはチャンバ８の排気口８ａから外部へ排出する。Along with the supply of the raw material gas, the carrier gas is delivered to the space between the nozzle 6 and the inner tube 5 and the space between the inner tube and the chamber 8. These carrier gases can be inert gases such as hydrogen, nitrogen, argon and the like. The raw material gas is released from the outlet opening 6c of the nozzle 6,
The substrate moves toward the substrate substantially parallel to the deposition surface of the substrate 1 on which the film is to be formed, and is heated by the heat from the substrate to cause a reaction in improving the deposition of the substrate 1, thereby forming a single crystal film on the substrate 1. In order to form a uniform film over the entire surface of the substrate,
The substrate and the susceptor are rotated by a driving device (not shown). The unreacted source gas and carrier gas are exhausted from the exhaust port 8a of the chamber 8 to the outside.
【００２０】図２は本発明による化学気相堆積装置の別
の実施例を示す。尚、図１で用いた部材と同一の部材に
は同一の符号を付し、その説明は省略する。本例では、
ノズル６に冷却手段を設ける代りに、ノズル６の下側に
基板１、サセプタ２及び抵抗加熱体３から放射される赤
外光がノズル６に入射しないように２個の遮蔽板１０ａ
及び１０ｂを配置する。装置の動作中、チャンバ８の内
部は２０トール程度に減圧された状態で堆積プロセスが
進行するので、ノズル６の加熱は主として基板１等から
輻射される赤外光により行なわれる。従って、本例のよ
うに基板等の熱源とノズルとの間に遮蔽板を配置するこ
とにより、ノズルの昇温を大幅に低下させることができ
る。尚、遮蔽板は１個だけでもよいが、２個又はそれ以
上配置すれば、熱源からの物理的距離が短くても大きな
温度勾配を得ることができ、従って装置の動作中におけ
るノズル６の昇温を大幅に低下させることができる。遮
蔽材料として種々の高融点金属材料を用いることがで
き、例えばモリブデン、ニッケル、クロム、タングステ
ン、銅、コバルト等を用いることができる。FIG. 2 shows another embodiment of the chemical vapor deposition apparatus according to the present invention. Note that the same members as those used in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted. In this example,
Instead of providing a cooling means in the nozzle 6, two shielding plates 10a are provided below the nozzle 6 so that infrared light emitted from the substrate 1, the susceptor 2, and the resistance heating body 3 does not enter the nozzle 6.
And 10b. During the operation of the apparatus, the deposition process proceeds while the pressure inside the chamber 8 is reduced to about 20 Torr, so that the nozzle 6 is heated mainly by infrared light radiated from the substrate 1 or the like. Therefore, by disposing the shielding plate between the nozzle and the heat source such as the substrate as in this example, the temperature rise of the nozzle can be significantly reduced. It should be noted that only one shielding plate may be provided, but if two or more shielding plates are arranged, a large temperature gradient can be obtained even if the physical distance from the heat source is short, and therefore, the rising of the nozzle 6 during operation of the apparatus can be achieved. The temperature can be greatly reduced. Various high-melting metal materials can be used as the shielding material, and for example, molybdenum, nickel, chromium, tungsten, copper, cobalt, and the like can be used.
【００２１】図３は遮蔽板及び冷却手段の有無と形成さ
れたＡｌＮの膜厚との関係を示すグラフである。以下の
実験条件で２時間成膜処理を行ない、基板上に形成され
たＡｌＮ膜の膜厚を測定した。実験条件は以下の通りで
ある。FIG. 3 is a graph showing the relationship between the presence or absence of the shielding plate and the cooling means and the thickness of the formed AlN. A film formation process was performed for 2 hours under the following experimental conditions, and the thickness of the AlN film formed on the substrate was measured. The experimental conditions are as follows.
【００２２】[0022]
【表１】 [Table 1]
【００２３】図３において、縦軸は体積したＡｌＮ膜の
膜厚を示す。また黒四角はノズル冷却手段７及び遮蔽板
１０のない従来のＣＶＤ装置で体積したときの膜厚を示
し、三角印は図２に示す遮蔽板１０を１枚設けたときの
膜厚を示し、丸印は図１の冷却手段を用いて水冷したと
きの膜厚を示す。図３から明らかなように、ノズル６の
先端部を１枚の遮蔽板１０により赤外光を遮蔽するだけ
で体積した膜厚は２０％増加している。また、ノズル６
を水冷した場合、膜厚は約２．３倍も増加している。こ
の実験結果より、従来のＣＶＤ装置では加熱源からの赤
外光によりノズルが昇温してしまい、原料ガスが基板に
到達する前に反応して消費されているものと考えられ
る。これに対して、遮蔽板が存在する場合加熱源から放
出された赤外光が有効に遮蔽され、ノズルの昇温が有効
に抑制されているものと考えられる。さらに、ノズルを
水冷した場合膜厚が約２．３倍も増大することから、ノ
ズルを積極的に冷却することは極めて有用な方法である
と考えられる。これらの実験結果によれば、遮蔽板と冷
却手段とを組み合わせればさらに一層成膜速度を向上で
きることが期待される。In FIG. 3, the vertical axis indicates the thickness of the volume of the AlN film. Further, a black square indicates a film thickness when the volume is increased in a conventional CVD apparatus without the nozzle cooling means 7 and the shielding plate 10, and a triangle indicates a film thickness when one shielding plate 10 shown in FIG. 2 is provided. The circles indicate the film thickness when water-cooled using the cooling means of FIG. As can be seen from FIG. 3, the thickness of the tip of the nozzle 6 is increased by 20% by merely shielding the infrared light with a single shielding plate 10. In addition, nozzle 6
When was cooled with water, the film thickness increased about 2.3 times. From this experimental result, it is considered that in the conventional CVD apparatus, the temperature of the nozzle was raised by infrared light from the heating source, and the raw material gas was reacted and consumed before reaching the substrate. On the other hand, when the shielding plate exists, it is considered that the infrared light emitted from the heating source is effectively shielded, and the temperature rise of the nozzle is effectively suppressed. Further, when the nozzle is cooled with water, the film thickness is increased by about 2.3 times. Therefore, it is considered that actively cooling the nozzle is an extremely useful method. According to these experimental results, it is expected that the film forming rate can be further improved by combining the shielding plate and the cooling means.
【００２４】図４は本発明による化学気相堆積装置の別
の実施例を示す。本例では、ノズル６の外周に赤外光に
対して高い反射性を有する反射材料層２０を形成する。
前述したように、装置の動作中チャンバ内は減圧されて
いるからノズル６は主として輻射により加熱される。従
って、ノズル６を反射材料層で被覆すれば、ノズルの昇
温を有効に防止することができる。FIG. 4 shows another embodiment of the chemical vapor deposition apparatus according to the present invention. In this example, a reflective material layer 20 having high reflectivity to infrared light is formed on the outer periphery of the nozzle 6.
As described above, since the pressure in the chamber is reduced during the operation of the apparatus, the nozzle 6 is heated mainly by radiation. Therefore, if the nozzle 6 is covered with the reflective material layer, the temperature rise of the nozzle can be effectively prevented.
【００２５】本発明は上述した実施例だけに限定され
ず、種々の変更や変形が可能である。例えば、上述した
実施例では、ＭＯ−ＣＶＤ装置について説明したが、Ｍ
Ｏ−ＣＶＤ装置に限らず、気相での化学反応を利用して
成膜する種々のＣＶＤ装置にも適用することができる。The present invention is not limited to the above-described embodiment, and various changes and modifications are possible. For example, in the above-described embodiment, the MO-CVD apparatus has been described.
The present invention can be applied not only to the O-CVD apparatus but also to various CVD apparatuses for forming a film using a chemical reaction in a gas phase.
【００２６】[0026]
【発明の効果】以上説明したように本発明によれば、原
料ガスを基板に向けて供給するノズルの昇温を防止する
手段を設けているから、原料ガスが基板に到達する前反
応をおこすのを有効に防止でき、この結果高温条件下に
おいても良質な単結晶膜を均一な厚さで形成することが
できる。As described above, according to the present invention, since the means for preventing the temperature of the nozzle for supplying the raw material gas toward the substrate is provided, a reaction occurs before the raw material gas reaches the substrate. Can be effectively prevented, and as a result, a high-quality single crystal film having a uniform thickness can be formed even under a high temperature condition.
【図１】本発明による化学気相堆積装置の一例の構成を
示す線図的断面図である。FIG. 1 is a schematic cross-sectional view showing a configuration of an example of a chemical vapor deposition apparatus according to the present invention.
【図２】本発明による化学気相堆積装置の別の実施例を
示す線図的断面図である。FIG. 2 is a schematic sectional view showing another embodiment of the chemical vapor deposition apparatus according to the present invention.
【図３】遮蔽板の枚数と形成された膜の関係を示すグラ
フである。FIG. 3 is a graph showing a relationship between the number of shielding plates and a formed film.
【図４】本発明による化学気相堆積装置の別の実施例を
示す線図的断面図である。FIG. 4 is a schematic sectional view showing another embodiment of the chemical vapor deposition apparatus according to the present invention.
１ 基板、２ サセプタ、３ 抵抗加熱体、４ 遮蔽
体、５ 内挿管、６ ノズル、７ 冷却手段、８ チャ
ンバ、９ａ，９ｂ，９ｃ 水冷ジャケット、１０ａ，１
０ｂ 遮蔽板Reference Signs List 1 substrate, 2 susceptor, 3 resistance heating body, 4 shield, 5 intubation, 6 nozzle, 7 cooling means, 8 chamber, 9a, 9b, 9c water cooling jacket, 10a, 1
0b Shield plate
フロントページの続き (56)参考文献 特開 平10−167897（ＪＰ，Ａ) 特開 平10−158098（ＪＰ，Ａ) 特開 昭64−79097（ＪＰ，Ａ) 実開 昭60−16757（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) C30B 1/00 - 35/00 ＣＡ（ＳＴＮ) ＪＩＣＳＴファイル（ＪＯＩＳ)Continuation of the front page (56) References JP-A-10-167797 (JP, A) JP-A-10-158098 (JP, A) JP-A-64-79097 (JP, A) JP-A-60-16757 (JP) , U) (58) Fields surveyed (Int. Cl. 7 , DB name) C30B 1/00-35/00 CA (STN) JICST file (JOIS)
Claims (5)
と、基板を所定の温度に加熱する加熱手段と、前記基板
に向けて原料ガスを放出する出口開口を有し、基板の膜
形成すべき表面にほぼ平行な方向から基板に向けて原料
ガスを供給するノズルと、前記加熱手段から放射される
赤外線を遮蔽する遮蔽手段と、前記ノズルのほぼ全体を
冷却する冷却手段とを具えることを特徴とする化学気相
堆積装置。A susceptor for supporting a substrate on which a film is to be formed, heating means for heating the substrate to a predetermined temperature, and an outlet opening for discharging a source gas toward the substrate, forming a film on the substrate. A nozzle for supplying a source gas from a direction substantially parallel to a surface to be directed toward the substrate; shielding means for shielding infrared rays emitted from the heating means; and cooling means for cooling substantially the entire nozzle. A chemical vapor deposition apparatus characterized by the above-mentioned.
と、基板を所定の温度に加熱する加熱手段と、前記基板
に向けて原料ガスを放出する出口開口を有し、基板の膜
形成すべき表面にほぼ平行な方向から基板に向けて原料
ガスを供給するノズルと、前記加熱手段から放射される
赤外線を遮蔽する遮蔽手段とを具える化学気相堆積装置
装置において、前記ノズルをサファイア、フッ化カルシ
ウム、フッ化マグネシウムまたはフッ化バリウムで構成
したことを特徴とする化学気相堆積装置。2. A susceptor for supporting a substrate on which a film is to be formed, heating means for heating the substrate to a predetermined temperature, and an outlet opening for discharging a raw material gas toward the substrate, the substrate being formed into a film. A nozzle for supplying a raw material gas from a direction substantially parallel to the surface to be directed toward the substrate, and a chemical vapor deposition apparatus comprising shielding means for shielding infrared rays emitted from the heating means, wherein the nozzle is sapphire; A chemical vapor deposition apparatus comprising calcium fluoride, magnesium fluoride or barium fluoride.
と、基板を所定の温度に加熱する加熱手段と、前記基板
に向けて原料ガスを放出する出口開口を有し、基板の膜
形成すべき表面にほぼ平行な方向から基板に向けて原料
ガスを供給するノズルと、前記加熱手段から放射される
赤外線を遮蔽する遮蔽手段とを具える化学気相堆積装置
において、前記ノズルに赤外光を反射する反射材料層を
形成したことを特徴とする化学気相堆積装置。3. A susceptor for supporting a substrate on which a film is to be formed, a heating means for heating the substrate to a predetermined temperature, and an outlet opening for discharging a source gas toward the substrate, forming a film on the substrate. A chemical gas deposition apparatus comprising: a nozzle for supplying a source gas toward a substrate from a direction substantially parallel to a surface to be heated; and a shielding means for shielding infrared rays emitted from the heating means. A chemical vapor deposition apparatus, wherein a reflective material layer that reflects light is formed.
装置において、さらに、前記ノズルの加熱手段と対向す
る側に加熱手段から放射される赤外線を遮蔽する別の遮
蔽手段を配置したことを特徴とする化学気相堆積装置。4. The chemical vapor deposition apparatus according to claim 1, further comprising a shielding means for shielding infrared rays emitted from the heating means on a side of the nozzle facing the heating means. A chemical vapor deposition apparatus characterized in that:
て、前記別の遮蔽手段を１個又はそれ以上の遮蔽板で構
成したことを特徴とする化学気相堆積装置。5. The chemical vapor deposition apparatus according to claim 4, wherein said another shielding means is constituted by one or more shielding plates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08322506A JP3142054B2 (en) | 1996-12-03 | 1996-12-03 | Chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08322506A JP3142054B2 (en) | 1996-12-03 | 1996-12-03 | Chemical vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10167883A JPH10167883A (en) | 1998-06-23 |
| JP3142054B2 true JP3142054B2 (en) | 2001-03-07 |
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ID=18144422
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08322506A Expired - Lifetime JP3142054B2 (en) | 1996-12-03 | 1996-12-03 | Chemical vapor deposition equipment |
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| Country | Link |
|---|---|
| JP (1) | JP3142054B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007311660A (en) * | 2006-05-19 | 2007-11-29 | Toyoda Gosei Co Ltd | Gas supplying nozzle and semiconductor manufacturing equipment using it |
| CN101595250A (en) * | 2007-01-31 | 2009-12-02 | 住友化学株式会社 | Method for preparing Group III-V compound semiconductors |
| JP5100231B2 (en) * | 2007-07-25 | 2012-12-19 | 株式会社トクヤマ | Group III nitride production equipment |
| JP6054733B2 (en) * | 2012-03-02 | 2016-12-27 | スタンレー電気株式会社 | Vapor growth equipment |
| KR101402236B1 (en) * | 2012-05-25 | 2014-06-02 | 국제엘렉트릭코리아 주식회사 | Nozzle unit and equipment for deposition unit |
-
1996
- 1996-12-03 JP JP08322506A patent/JP3142054B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10167883A (en) | 1998-06-23 |
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