JP3973283B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents

プラズマ処理装置及びプラズマ処理方法 Download PDF

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Publication number: JP3973283B2
Authority: JP; Japan
Prior art keywords: magnetic field; plasma; gauss; etching; frequency
Prior art date: 1998-01-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP00799198A

Other languages

English (en)

Japanese (ja)

Other versions

JPH11204297A5 (2

JPH11204297A (ja

Inventor

俊夫増田

潤一田中

哲徳加治

克哉渡辺

徹大坪

一郎佐々木

茂白米

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1998-01-19

Filing date

1998-01-19

Publication date

2007-09-12

1998-01-19 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1998-01-19 Priority to JP00799198A priority Critical patent/JP3973283B2/ja

1999-07-30 Publication of JPH11204297A publication Critical patent/JPH11204297A/ja

2005-06-16 Publication of JPH11204297A5 publication Critical patent/JPH11204297A5/ja

2007-09-12 Application granted granted Critical

2007-09-12 Publication of JP3973283B2 publication Critical patent/JP3973283B2/ja

2018-01-19 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

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Chemical Vapour Deposition (AREA)
ing And Chemical Polishing (AREA)
Drying Of Semiconductors (AREA)
Plasma Technology (AREA)

JP00799198A 1998-01-19 1998-01-19 プラズマ処理装置及びプラズマ処理方法 Expired - Fee Related JP3973283B2 (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP00799198A JP3973283B2 (ja)	1998-01-19	1998-01-19	プラズマ処理装置及びプラズマ処理方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP00799198A JP3973283B2 (ja)	1998-01-19	1998-01-19	プラズマ処理装置及びプラズマ処理方法

Publications (3)

Publication Number	Publication Date
JPH11204297A JPH11204297A (ja)	1999-07-30
JPH11204297A5 JPH11204297A5 (2)	2005-06-16
JP3973283B2 true JP3973283B2 (ja)	2007-09-12

Family

ID=11680886

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP00799198A Expired - Fee Related JP3973283B2 (ja)	1998-01-19	1998-01-19	プラズマ処理装置及びプラズマ処理方法

Country Status (1)

Country	Link
JP (1)	JP3973283B2 (2)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6451703B1 (en) *	2000-03-10	2002-09-17	Applied Materials, Inc.	Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
US7232766B2 (en) *	2003-03-14	2007-06-19	Lam Research Corporation	System and method for surface reduction, passivation, corrosion prevention and activation of copper surface
JP4506318B2 (ja)	2004-07-15	2010-07-21	三菱電機株式会社	表示装置の製造方法および表示装置の製造装置
KR100941070B1 (ko) *	2007-05-10	2010-02-09	세메스 주식회사	플라즈마를 이용하여 기판을 처리하는 장치
US8247315B2 (en) *	2008-03-17	2012-08-21	Semiconductor Energy Laboratory Co., Ltd.	Plasma processing apparatus and method for manufacturing semiconductor device
CN103854944A (zh) *	2012-12-04	2014-06-11	上海华虹宏力半导体制造有限公司	刻蚀设备腔体的气体导入结构和气体导入方法
JP6159757B2 (ja) *	2014-07-10	2017-07-05	東京エレクトロン株式会社	基板の高精度エッチングのプラズマ処理方法
KR102482734B1 (ko) *	2020-11-13	2022-12-30	충남대학교산학협력단	고주파 펄스 소스 및 저주파 펄스 바이어스를 이용한 플라즈마 극고종횡비 식각 방법
CN114156157B (zh) *	2021-12-01	2024-08-16	大连理工大学	一种等离子体产生装置
CN120977921A (zh) *	2025-10-17	2025-11-18	上海谙邦半导体设备有限公司	一种可控非均匀陶瓷板出气系统及方法

1998
- 1998-01-19 JP JP00799198A patent/JP3973283B2/ja not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JPH11204297A (ja)	1999-07-30

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