JP4243388B2 - 永久磁石装置を備えたカソードを有するスパッタリング装置 - Google Patents

永久磁石装置を備えたカソードを有するスパッタリング装置 Download PDF

Info

Publication number: JP4243388B2
Authority: JP; Japan
Prior art keywords: permanent magnet; target; insert; sputtering; cathode
Prior art date: 1998-08-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP22408899A

Other languages

English (en)

Japanese (ja)

Other versions

JP2000096225A (ja

Inventor

ハースディーター

ブッシュベックヴォルフガング

クレムペル−ヘッセイェルク

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Applied Materials GmbH and Co KG

Original Assignee

Applied Materials GmbH and Co KG

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1998-08-10

Filing date

1999-08-06

Publication date

2009-03-25

1999-08-06 Application filed by Applied Materials GmbH and Co KG filed Critical Applied Materials GmbH and Co KG

2000-04-04 Publication of JP2000096225A publication Critical patent/JP2000096225A/ja

2009-03-25 Application granted granted Critical

2009-03-25 Publication of JP4243388B2 publication Critical patent/JP4243388B2/ja

2019-08-06 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

238000004544 sputter deposition Methods 0.000 title claims description 34
230000005291 magnetic effect Effects 0.000 claims abstract description 25
239000003302 ferromagnetic material Substances 0.000 claims description 7
239000002826 coolant Substances 0.000 claims description 3
230000005684 electric field Effects 0.000 claims description 3
238000000638 solvent extraction Methods 0.000 claims 2
238000003491 array Methods 0.000 claims 1
238000009834 vaporization Methods 0.000 abstract 2
230000008016 vaporization Effects 0.000 abstract 2
230000003321 amplification Effects 0.000 abstract 1
238000000889 atomisation Methods 0.000 abstract 1
230000005294 ferromagnetic effect Effects 0.000 abstract 1
238000003199 nucleic acid amplification method Methods 0.000 abstract 1
230000004907 flux Effects 0.000 description 4
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
239000000758 substrate Substances 0.000 description 2
238000000576 coating method Methods 0.000 description 1
238000000151 deposition Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
229910052742 iron Inorganic materials 0.000 description 1
239000000696 magnetic material Substances 0.000 description 1
230000005389 magnetism Effects 0.000 description 1
239000000463 material Substances 0.000 description 1
238000007789 sealing Methods 0.000 description 1
239000013077 target material Substances 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Plasma & Fusion (AREA)
Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Physical Vapour Deposition (AREA)
Microwave Tubes (AREA)

JP22408899A 1998-08-10 1999-08-06 永久磁石装置を備えたカソードを有するスパッタリング装置 Expired - Lifetime JP4243388B2 (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DE19836125A DE19836125C2 (de)	1998-08-10	1998-08-10	Zerstäubungsvorrichtung mit einer Kathode mit Permanentmagnetanordnung
DE19836125.4		1998-08-10

Publications (2)

Publication Number	Publication Date
JP2000096225A JP2000096225A (ja)	2000-04-04
JP4243388B2 true JP4243388B2 (ja)	2009-03-25

Family

ID=7877040

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP22408899A Expired - Lifetime JP4243388B2 (ja)	1998-08-10	1999-08-06	永久磁石装置を備えたカソードを有するスパッタリング装置

Country Status (8)

Country	Link
US (1)	US6207028B1 (de)
EP (1)	EP0980090B1 (de)
JP (1)	JP4243388B2 (de)
KR (1)	KR100604649B1 (de)
CN (1)	CN100383276C (de)
AT (1)	ATE361548T1 (de)
DE (2)	DE19836125C2 (de)
TW (1)	TW442823B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPWO2002063064A1 (ja) *	2001-02-07	2004-06-10	旭硝子株式会社	スパッタ装置及びスパッタ成膜方法
US7198699B2 (en) *	2002-05-06	2007-04-03	Guardian Industries Corp.	Sputter coating apparatus including ion beam source(s), and corresponding method
DE102004007813A1 (de) *	2004-02-18	2005-09-08	Applied Films Gmbh & Co. Kg	Sputtervorrichtung mit einem Magnetron und einem Target
US7485210B2 (en) *	2004-10-07	2009-02-03	International Business Machines Corporation	Sputtering target fixture
JP5461264B2 (ja) *	2010-03-25	2014-04-02	キヤノンアネルバ株式会社	マグネトロンスパッタリング装置、及び、スパッタリング方法
CN103474314B (zh) *	2013-09-27	2016-01-20	西南交通大学	径向无箔二极管引导磁场系统
CN120738607A (zh) *	2019-07-03	2025-10-03	欧瑞康表面解决方案股份公司，普费菲孔	阴极电弧源
CN111022275B (zh) *	2019-12-23	2020-12-29	北京航空航天大学	一种磁等离子体推力器的阳极结构及磁等离子体推力器

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4265729A (en) *	1978-09-27	1981-05-05	Vac-Tec Systems, Inc.	Magnetically enhanced sputtering device
GB2028377B (en) *	1978-08-21	1982-12-08	Vac Tec Syst	Magnetically-enhanced sputtering device
US4461688A (en) *	1980-06-23	1984-07-24	Vac-Tec Systems, Inc.	Magnetically enhanced sputtering device having a plurality of magnetic field sources including improved plasma trapping device and method
JPS59200763A (ja) *	1983-04-30	1984-11-14	Fujitsu Ltd	スパツタリング装置
CH672319A5 (en) *	1987-12-20	1989-11-15	Bogdan Zega	Sputtering target cooling system - has metal membrane sepg. cooling liq. circuit from sputtering chamber
DE3812379A1 (de) *	1988-04-14	1989-10-26	Leybold Ag	Zerstaeubungskathode nach dem magnetron-prinzip
DE3912381A1 (de) *	1988-04-15	1989-10-26	Sharp Kk	Auffaengereinheit
JPH0774439B2 (ja) *	1989-01-30	1995-08-09	三菱化学株式会社	マグネトロンスパッタ装置
DE3937558C2 (de) *	1989-11-11	1997-02-13	Leybold Ag	Katodenzerstäubungsvorrichtung
DE4201551C2 (de) *	1992-01-22	1996-04-25	Leybold Ag	Zerstäubungskathode
US5328585A (en) *	1992-12-11	1994-07-12	Photran Corporation	Linear planar-magnetron sputtering apparatus with reciprocating magnet-array
DE4301516C2 (de) *	1993-01-21	2003-02-13	Applied Films Gmbh & Co Kg	Targetkühlung mit Wanne
EP0704878A1 (de) *	1994-09-27	1996-04-03	Applied Materials, Inc.	Niederschlag eines Films aus zerstaübten Materialien gleichmässiger Dicke
JP3655334B2 (ja) *	1994-12-26	2005-06-02	松下電器産業株式会社	マグネトロンスパッタリング装置
CN1166811C (zh) *	1996-01-05	2004-09-15	日本真空技术株式会社	离子溅射泵
DE19607803A1 (de) *	1996-03-01	1997-09-04	Leybold Ag	Vorrichtung zur Überwachung der Targetabnutzung von Sputterkathoden
CN2241698Y (zh) *	1996-03-08	1996-12-04	甘国工	平面磁控溅射源
DE19614487A1 (de) *	1996-04-12	1997-10-16	Leybold Ag	Sputterkathode
DE19819785A1 (de) *	1998-05-04	1999-11-11	Leybold Systems Gmbh	Zerstäubungskathode nach dem Magnetron-Prinzip

1998
- 1998-08-10 DE DE19836125A patent/DE19836125C2/de not_active Expired - Lifetime
1999
- 1999-07-30 EP EP99114913A patent/EP0980090B1/de not_active Expired - Lifetime
- 1999-07-30 DE DE59914321T patent/DE59914321D1/de not_active Expired - Lifetime
- 1999-07-30 AT AT99114913T patent/ATE361548T1/de not_active IP Right Cessation
- 1999-08-02 TW TW088113172A patent/TW442823B/zh not_active IP Right Cessation
- 1999-08-06 JP JP22408899A patent/JP4243388B2/ja not_active Expired - Lifetime
- 1999-08-09 KR KR1019990032490A patent/KR100604649B1/ko not_active Expired - Lifetime
- 1999-08-10 CN CNB991197895A patent/CN100383276C/zh not_active Expired - Lifetime
- 1999-08-10 US US09/371,605 patent/US6207028B1/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
DE19836125A1 (de)	2000-02-24
CN100383276C (zh)	2008-04-23
KR100604649B1 (ko)	2006-07-25
US6207028B1 (en)	2001-03-27
EP0980090A3 (de)	2004-12-01
DE19836125C2 (de)	2001-12-06
JP2000096225A (ja)	2000-04-04
TW442823B (en)	2001-06-23
EP0980090B1 (de)	2007-05-02
EP0980090A2 (de)	2000-02-16
ATE361548T1 (de)	2007-05-15
DE59914321D1 (de)	2007-06-14
KR20000017180A (ko)	2000-03-25
CN1248640A (zh)	2000-03-29

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Publication	Publication Date	Title
US4601806A (en)	1986-07-22	Magnetron cathode for sputtering ferromagnetic targets
FI57332C (fi)	1980-07-10	Magnetisk anordning foer justering av straolpositionen i ett faergetelevisionsroer
US4892633A (en)	1990-01-09	Magnetron sputtering cathode
US4865708A (en)	1989-09-12	Magnetron sputtering cathode
KR100229008B1 (ko)	1999-11-01	진공코팅시스템의 고정식 자전관 스퍼터링 음극
JP4243388B2 (ja)	2009-03-25	永久磁石装置を備えたカソードを有するスパッタリング装置
DE3480245D1 (en)	1989-11-23	Magnetron-cathodes for the sputtering of ferromagnetic targets
JPH11509273A (ja)	1999-08-17	永久磁石配列装置とその方法
US5164063A (en)	1992-11-17	Sputtering cathode arrangement according to the magnetron principle for coating a flat annular surface
CA2099813C (en)	2003-01-21	X-z geometry periodic permanent magnet focusing system
KR850008362A (ko)	1985-12-16	스퍼터코팅 장치 및 방법
KR100359901B1 (ko)	2002-11-04	마그네트론 원리에 근거한 스퍼터링 캐소드
JP2001348663A (ja)	2001-12-18	スパッタリング装置
JPH11213939A (ja)	1999-08-06	スパッターカソード
JPS6217175A (ja)	1987-01-26	スパツタリング装置
JP2942301B2 (ja)	1999-08-30	電子銃磁界補正用フェンス装置
JP4489868B2 (ja)	2010-06-23	カソード電極装置及びスパッタリング装置
JP4902518B2 (ja)	2012-03-21	スパッタリング装置
JPH04500243A (ja)	1992-01-16	電子ビーム加熱蒸着ソース用磁気構造体
JPS61288067A (ja)	1986-12-18	スパツタ装置
JP2009167492A (ja)	2009-07-30	成膜源、スパッタリング装置
US6139706A (en)	2000-10-31	Sputter cathode
JPS6142903Y2 (de)	1986-12-05
JPH11219681A (ja)	1999-08-10	スパッタカソード
JPH03183123A (ja)	1991-08-09	スパッタリング装置