JP4376979B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4376979B2
JP4376979B2 JP01809898A JP1809898A JP4376979B2 JP 4376979 B2 JP4376979 B2 JP 4376979B2 JP 01809898 A JP01809898 A JP 01809898A JP 1809898 A JP1809898 A JP 1809898A JP 4376979 B2 JP4376979 B2 JP 4376979B2
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silicon film
crystalline silicon
film
amorphous silicon
region
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Expired - Fee Related
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Japanese (ja)
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JPH11204435A (ja
JPH11204435A5 (2
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舜平 山崎
昌彦 早川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP01809898A priority Critical patent/JP4376979B2/ja
Priority to US09/227,577 priority patent/US6693044B1/en
Publication of JPH11204435A publication Critical patent/JPH11204435A/ja
Publication of JPH11204435A5 publication Critical patent/JPH11204435A5/ja
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    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
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    • H10D86/0227—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using structural arrangements to control crystal growth, e.g. placement of grain filters
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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP01809898A 1998-01-12 1998-01-12 半導体装置の作製方法 Expired - Fee Related JP4376979B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP01809898A JP4376979B2 (ja) 1998-01-12 1998-01-12 半導体装置の作製方法
US09/227,577 US6693044B1 (en) 1998-01-12 1999-01-08 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01809898A JP4376979B2 (ja) 1998-01-12 1998-01-12 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH11204435A JPH11204435A (ja) 1999-07-30
JPH11204435A5 JPH11204435A5 (2) 2005-08-04
JP4376979B2 true JP4376979B2 (ja) 2009-12-02

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Cited By (1)

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JP4376979B2 (ja) 1998-01-12 2009-12-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6515648B1 (en) * 1999-08-31 2003-02-04 Semiconductor Energy Laboratory Co., Ltd. Shift register circuit, driving circuit of display device, and display device using the driving circuit
US6580094B1 (en) * 1999-10-29 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Electro luminescence display device
JP2001147446A (ja) 1999-11-19 2001-05-29 Hitachi Ltd 液晶表示装置とその製造方法
US7232742B1 (en) * 1999-11-26 2007-06-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes forming a material with a high tensile stress in contact with a semiconductor film to getter impurities from the semiconductor film
JP2001168363A (ja) * 1999-12-10 2001-06-22 Toyota Central Res & Dev Lab Inc 太陽電池の製造方法
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US7503975B2 (en) 2000-06-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method therefor
JP2002246310A (ja) * 2001-02-14 2002-08-30 Sony Corp 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置
JP5072147B2 (ja) * 2001-05-24 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6897477B2 (en) 2001-06-01 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device
JP4267266B2 (ja) 2001-07-10 2009-05-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI282126B (en) * 2001-08-30 2007-06-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
US7238557B2 (en) * 2001-11-14 2007-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP3626734B2 (ja) * 2002-03-11 2005-03-09 日本電気株式会社 薄膜半導体装置
KR100475077B1 (ko) * 2002-05-31 2005-03-10 삼성전자주식회사 캐패시터의 유전막 형성방법
US6882010B2 (en) * 2002-10-03 2005-04-19 Micron Technology, Inc. High performance three-dimensional TFT-based CMOS inverters, and computer systems utilizing such novel CMOS inverters
JP4928045B2 (ja) * 2002-10-31 2012-05-09 大日本印刷株式会社 相変化型メモリ素子およびその製造方法
US7374976B2 (en) * 2002-11-22 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin film transistor
JP2005228819A (ja) * 2004-02-10 2005-08-25 Mitsubishi Electric Corp 半導体装置
US7618898B2 (en) * 2004-03-31 2009-11-17 Nec Corporation Method and apparatus for forming contact hole
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US7291522B2 (en) * 2004-10-28 2007-11-06 Hewlett-Packard Development Company, L.P. Semiconductor devices and methods of making
JP4272142B2 (ja) * 2004-12-07 2009-06-03 株式会社ルネサステクノロジ スイッチング素子並びにそれを用いたアンテナスイッチ回路及び高周波モジュール
US7897971B2 (en) * 2007-07-26 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2009070861A (ja) * 2007-09-11 2009-04-02 Hitachi Displays Ltd 表示装置
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