JP4438579B2 - センサ装置 - Google Patents
センサ装置 Download PDFInfo
- Publication number
- JP4438579B2 JP4438579B2 JP2004266692A JP2004266692A JP4438579B2 JP 4438579 B2 JP4438579 B2 JP 4438579B2 JP 2004266692 A JP2004266692 A JP 2004266692A JP 2004266692 A JP2004266692 A JP 2004266692A JP 4438579 B2 JP4438579 B2 JP 4438579B2
- Authority
- JP
- Japan
- Prior art keywords
- sensor
- chip
- wire
- circuit chip
- stopper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W46/00—Marks applied to devices, e.g. for alignment or identification
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07321—Aligning
- H10W72/07327—Aligning involving guiding structures, e.g. spacers or supporting members
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07331—Connecting techniques
- H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
- H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5453—Dispositions of bond wires connecting between multiple bond pads on a chip, e.g. daisy chain
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/752—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Gyroscopes (AREA)
- Pressure Sensors (AREA)
Description
において、互いに同一もしくは均等である部分には、説明の簡略化を図るべく、図中、同
一符号を付してある。
図1は、本発明の第1実施形態に係るセンサ装置としての角速度センサ装置S1の構成を示す図である。図1において、(a)は当該センサ装置S1の概略平面図であり、(b)は同センサ装置S1の概略断面図である。なお、図1(a)は、蓋140を取り外した状態のものを図1(b)の上方から見た図である。
図5は、本発明の第2実施形態に係るセンサ装置としての角速度センサ装置S2の構成を示す図であり、(a)は当該センサ装置S2の概略平面図であり、(b)は同センサ装置S2の概略断面図である。なお、図5(a)は、蓋140を取り外した状態のものを図5(b)の上方から見た図である。
図6は、本発明の第3実施形態に係るセンサ装置としての角速度センサ装置S3の構成を示す図であり、(a)は当該センサ装置S3の概略平面図であり、(b)は同センサ装置S3の概略断面図である。なお、図6(a)は、蓋140を取り外した状態のものを図6(b)の上方から見た図である。
図7は、本発明の第4実施形態に係るセンサ装置としての角速度センサ装置S4の構成を示す図であり、(a)は当該センサ装置S4の概略平面図であり、(b)は同センサ装置S4の概略断面図である。なお、図7(a)は、蓋140を取り外した状態のものを図7(b)の上方から見た図である。
図8は、本発明の第5実施形態に係るセンサ装置としての角速度センサ装置S5の概略平面構成を示す図であり、蓋140を取り外した状態としている。
図9は、本発明の第6実施形態に係るセンサ装置としての角速度センサ装置S6の概略平面構成を示す図であり、蓋140を取り外した状態としている。
以上、本発明のセンサ装置として角速度センサ装置を例にとって説明してきたが、本発明は、角速度センサに限定されるものではなく、加速度センサ、圧力センサ、温度センサ、湿度センサ、光センサ、画像センサなどにも適用可能である。
3…ストッパとしてのはんだバンプ、4…ストッパとしての樹脂部材、
5…ストッパとしてのアンカーワイヤ、6…ストッパとしてのワイヤ、
100…パッケージ、200…センサチップ、300…回路チップ、
400…接着材。
Claims (1)
- 回路チップ(300)の上に接着材(400)を介してセンサチップ(200)が積層され接着されており、
前記センサチップ(200)と前記回路チップ(300)とがボンディングワイヤ(500)を介して接続されてなるセンサ装置において、
前記接着材(400)の変形による前記センサチップ(200)の変位を規制するためのストッパ(1)が、前記センサチップ(200)の周囲に設けられており、
前記ストッパは、前記回路チップ(300)のうち前記センサチップ(200)の外周に位置する部位にて前記回路チップ(300)上に設けられたボンディングワイヤからなるワイヤ(1)であり、
前記センサチップ(200)が、前記回路チップ(300)上にて平面方向に変位したとき、前記ワイヤ(1)に当たって止まるようになっていることを特徴とするセンサ装置。
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004266692A JP4438579B2 (ja) | 2004-09-14 | 2004-09-14 | センサ装置 |
| DE102005043013.9A DE102005043013B4 (de) | 2004-09-14 | 2005-09-09 | Sensoranordnung mit einem Stopper zur Begrenzung einer Verschiebung |
| US11/224,280 US7385296B2 (en) | 2004-09-14 | 2005-09-13 | Sensor device having stopper for limitting displacement |
| US12/078,367 US7750486B2 (en) | 2004-09-14 | 2008-03-31 | Sensor device having stopper for limitting displacement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004266692A JP4438579B2 (ja) | 2004-09-14 | 2004-09-14 | センサ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006084200A JP2006084200A (ja) | 2006-03-30 |
| JP4438579B2 true JP4438579B2 (ja) | 2010-03-24 |
Family
ID=35853773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004266692A Expired - Fee Related JP4438579B2 (ja) | 2004-09-14 | 2004-09-14 | センサ装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7385296B2 (ja) |
| JP (1) | JP4438579B2 (ja) |
| DE (1) | DE102005043013B4 (ja) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4570868B2 (ja) * | 2003-12-26 | 2010-10-27 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP4728079B2 (ja) * | 2005-10-07 | 2011-07-20 | ルネサスエレクトロニクス株式会社 | 半導体装置用基板および半導体装置 |
| JP5292687B2 (ja) * | 2006-10-12 | 2013-09-18 | 株式会社デンソー | 圧力センサ |
| JP2008101980A (ja) * | 2006-10-18 | 2008-05-01 | Denso Corp | 容量式半導体センサ装置 |
| US20080257045A1 (en) * | 2007-04-18 | 2008-10-23 | Denso Corporation | Sensor device for detecting physical quantity |
| JP2008304218A (ja) * | 2007-06-05 | 2008-12-18 | Mitsubishi Electric Corp | 加速度センサおよびその製造方法 |
| JP4600563B2 (ja) * | 2007-10-24 | 2010-12-15 | 株式会社デンソー | 半導体装置及びその製造方法 |
| US8710568B2 (en) * | 2007-10-24 | 2014-04-29 | Denso Corporation | Semiconductor device having a plurality of elements on one semiconductor substrate and method of manufacturing the same |
| JP2010199548A (ja) * | 2009-01-30 | 2010-09-09 | Elpida Memory Inc | 半導体装置およびその製造方法 |
| US8441123B1 (en) * | 2009-08-13 | 2013-05-14 | Amkor Technology, Inc. | Semiconductor device with metal dam and fabricating method |
| TW201121001A (en) * | 2009-12-14 | 2011-06-16 | Domintech Co Ltd | Packaging of micro-electromechanical sensor device |
| US8674519B2 (en) * | 2010-12-17 | 2014-03-18 | Intel Corporation | Microelectronic package and method of manufacturing same |
| CN102491261B (zh) * | 2011-12-23 | 2014-12-03 | 哈尔滨工业大学 | 一种基于引线键合的mems自组装过程的限位方法 |
| JP5845152B2 (ja) | 2012-07-26 | 2016-01-20 | ルネサスエレクトロニクス株式会社 | 半導体装置、携帯通信機器、及び、半導体装置の製造方法 |
| JP2014049733A (ja) * | 2012-09-04 | 2014-03-17 | Fujitsu Semiconductor Ltd | 半導体装置及び半導体装置の製造方法 |
| DE102013104043A1 (de) * | 2013-04-22 | 2014-10-23 | Epcos Ag | Sensorbauelement und Verfahren zu dessen Herstellung |
| US9190389B2 (en) | 2013-07-26 | 2015-11-17 | Infineon Technologies Ag | Chip package with passives |
| US9070568B2 (en) * | 2013-07-26 | 2015-06-30 | Infineon Technologies Ag | Chip package with embedded passive component |
| US9685351B2 (en) | 2014-07-18 | 2017-06-20 | Nxp Usa, Inc. | Wire bond mold lock method and structure |
| DE102015213450A1 (de) * | 2015-07-17 | 2017-01-19 | Robert Bosch Gmbh | MEMS Drehratensensor mit kombiniertem Antrieb und Detektion |
| JP7310598B2 (ja) * | 2019-12-25 | 2023-07-19 | 株式会社デンソー | 電子装置 |
| CN113804229B (zh) * | 2020-06-17 | 2024-08-13 | 京元电子股份有限公司 | 具有限制过转机构的动态测试模块 |
| US11987494B2 (en) | 2020-11-24 | 2024-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wire-bond damper for shock absorption |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1075152A (ja) | 1996-08-29 | 1998-03-17 | Kyocera Corp | 水晶発振器 |
| JP3841541B2 (ja) | 1998-03-11 | 2006-11-01 | カヤバ工業株式会社 | 加速度センサおよび加速度センサの製造方法 |
| SG97938A1 (en) * | 2000-09-21 | 2003-08-20 | Micron Technology Inc | Method to prevent die attach adhesive contamination in stacked chips |
| JP3631120B2 (ja) * | 2000-09-28 | 2005-03-23 | 沖電気工業株式会社 | 半導体装置 |
| JP2003021647A (ja) * | 2001-07-06 | 2003-01-24 | Denso Corp | 電子装置 |
| DK1423714T3 (da) * | 2001-09-04 | 2006-11-06 | Tokyo Electron Ltd | Mikrostruktur med bevægelig masse |
| US6476506B1 (en) * | 2001-09-28 | 2002-11-05 | Motorola, Inc. | Packaged semiconductor with multiple rows of bond pads and method therefor |
| US7253079B2 (en) * | 2002-05-09 | 2007-08-07 | The Charles Stark Draper Laboratory, Inc. | Coplanar mounting member for a MEM sensor |
| KR100516714B1 (ko) | 2002-07-09 | 2005-09-22 | 야마이치덴키 가부시키가이샤 | 반도체 장치용 소켓 |
-
2004
- 2004-09-14 JP JP2004266692A patent/JP4438579B2/ja not_active Expired - Fee Related
-
2005
- 2005-09-09 DE DE102005043013.9A patent/DE102005043013B4/de not_active Expired - Fee Related
- 2005-09-13 US US11/224,280 patent/US7385296B2/en not_active Expired - Lifetime
-
2008
- 2008-03-31 US US12/078,367 patent/US7750486B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE102005043013B4 (de) | 2018-02-01 |
| DE102005043013A1 (de) | 2006-03-16 |
| US7385296B2 (en) | 2008-06-10 |
| US20080191294A1 (en) | 2008-08-14 |
| US20060055062A1 (en) | 2006-03-16 |
| JP2006084200A (ja) | 2006-03-30 |
| US7750486B2 (en) | 2010-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7750486B2 (en) | Sensor device having stopper for limitting displacement | |
| US7327004B2 (en) | Sensor device | |
| JP4831949B2 (ja) | 物理量センサ装置 | |
| JP4492432B2 (ja) | 物理量センサ装置の製造方法 | |
| JP4442339B2 (ja) | 角速度検出装置 | |
| US7762134B2 (en) | Dynamic quantity sensor | |
| JP4973443B2 (ja) | センサ装置 | |
| JP5927434B2 (ja) | 慣性力センサ | |
| US20120000288A1 (en) | Physical quantity sensor | |
| JP4534912B2 (ja) | 角速度センサの取付構造 | |
| JP4692260B2 (ja) | 半導体力学量センサ装置およびその製造方法 | |
| JP4380618B2 (ja) | センサ装置 | |
| WO2018131404A1 (ja) | センサデバイス及び電子機器 | |
| JP2006194681A (ja) | 角速度センサ装置 | |
| JP4206984B2 (ja) | 角速度検出装置 | |
| JP4924873B2 (ja) | 圧電振動ジャイロモジュール及び圧電振動ジャイロセンサ | |
| CN100419430C (zh) | 传感器装置 | |
| JP2007033393A (ja) | 角速度センサ装置 | |
| WO2014002416A1 (ja) | 歪センサ | |
| JP2006234463A (ja) | 慣性センサ | |
| JP2007316090A (ja) | 慣性センサ | |
| JP2010266320A (ja) | 角速度センサ装置およびその製造方法 | |
| JP2006234462A (ja) | 慣性センサ | |
| JP2010223764A (ja) | 物理量検出デバイス |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060925 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090908 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091005 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20091215 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20091228 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130115 Year of fee payment: 3 |
|
| R151 | Written notification of patent or utility model registration |
Ref document number: 4438579 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130115 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140115 Year of fee payment: 4 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |