JP4634076B2 - 荷電粒子線露光装置及びデバイス製造方法 - Google Patents

荷電粒子線露光装置及びデバイス製造方法 Download PDF

Info

Publication number
JP4634076B2
JP4634076B2 JP2004194771A JP2004194771A JP4634076B2 JP 4634076 B2 JP4634076 B2 JP 4634076B2 JP 2004194771 A JP2004194771 A JP 2004194771A JP 2004194771 A JP2004194771 A JP 2004194771A JP 4634076 B2 JP4634076 B2 JP 4634076B2
Authority
JP
Japan
Prior art keywords
row
column
pattern
drawn
draws
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004194771A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006019436A (ja
JP2006019436A5 (2
Inventor
恭宏 染田
明佳 谷本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Canon Inc filed Critical Hitachi High Technologies Corp
Priority to JP2004194771A priority Critical patent/JP4634076B2/ja
Publication of JP2006019436A publication Critical patent/JP2006019436A/ja
Publication of JP2006019436A5 publication Critical patent/JP2006019436A5/ja
Application granted granted Critical
Publication of JP4634076B2 publication Critical patent/JP4634076B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2004194771A 2004-06-30 2004-06-30 荷電粒子線露光装置及びデバイス製造方法 Expired - Fee Related JP4634076B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004194771A JP4634076B2 (ja) 2004-06-30 2004-06-30 荷電粒子線露光装置及びデバイス製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004194771A JP4634076B2 (ja) 2004-06-30 2004-06-30 荷電粒子線露光装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2006019436A JP2006019436A (ja) 2006-01-19
JP2006019436A5 JP2006019436A5 (2) 2007-08-16
JP4634076B2 true JP4634076B2 (ja) 2011-02-16

Family

ID=35793429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004194771A Expired - Fee Related JP4634076B2 (ja) 2004-06-30 2004-06-30 荷電粒子線露光装置及びデバイス製造方法

Country Status (1)

Country Link
JP (1) JP4634076B2 (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8772734B2 (en) 2011-12-27 2014-07-08 Canon Kabushiki Kaisha Charged particle beam lithography apparatus and method, and article manufacturing method

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5484808B2 (ja) * 2008-09-19 2014-05-07 株式会社ニューフレアテクノロジー 描画装置及び描画方法
JP5634052B2 (ja) * 2009-01-09 2014-12-03 キヤノン株式会社 荷電粒子線描画装置およびデバイス製造方法
CN102460631B (zh) * 2009-05-20 2015-03-25 迈普尔平版印刷Ip有限公司 两次扫描
JP5977941B2 (ja) * 2011-12-19 2016-08-24 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
EP2757571B1 (en) 2013-01-17 2017-09-20 IMS Nanofabrication AG High-voltage insulation device for charged-particle optical apparatus
JP2015023286A (ja) 2013-07-17 2015-02-02 アイエムエス ナノファブリケーション アーゲー 複数のブランキングアレイを有するパターン画定装置
EP2830083B1 (en) 2013-07-25 2016-05-04 IMS Nanofabrication AG Method for charged-particle multi-beam exposure
US20150069260A1 (en) * 2013-09-11 2015-03-12 Ims Nanofabrication Ag Charged-particle multi-beam apparatus having correction plate
EP2913838B1 (en) * 2014-02-28 2018-09-19 IMS Nanofabrication GmbH Compensation of defective beamlets in a charged-particle multi-beam exposure tool
US9443699B2 (en) 2014-04-25 2016-09-13 Ims Nanofabrication Ag Multi-beam tool for cutting patterns
EP2950325B1 (en) 2014-05-30 2018-11-28 IMS Nanofabrication GmbH Compensation of dose inhomogeneity using overlapping exposure spots
JP6892214B2 (ja) 2014-07-10 2021-06-23 アイエムエス ナノファブリケーション ゲーエムベーハー 畳み込みカーネルを使用する粒子ビーム描画機のカスタマイズ化
US9568907B2 (en) 2014-09-05 2017-02-14 Ims Nanofabrication Ag Correction of short-range dislocations in a multi-beam writer
US9653263B2 (en) 2015-03-17 2017-05-16 Ims Nanofabrication Ag Multi-beam writing of pattern areas of relaxed critical dimension
EP3096342B1 (en) 2015-03-18 2017-09-20 IMS Nanofabrication AG Bi-directional double-pass multi-beam writing
US10410831B2 (en) 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
JP2016115946A (ja) * 2016-02-18 2016-06-23 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法
US10325756B2 (en) 2016-06-13 2019-06-18 Ims Nanofabrication Gmbh Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
US10325757B2 (en) 2017-01-27 2019-06-18 Ims Nanofabrication Gmbh Advanced dose-level quantization of multibeam-writers
US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
US10840054B2 (en) 2018-01-30 2020-11-17 Ims Nanofabrication Gmbh Charged-particle source and method for cleaning a charged-particle source using back-sputtering
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
JP7316127B2 (ja) * 2019-07-10 2023-07-27 株式会社ニューフレアテクノロジー マルチビーム描画方法及びマルチビーム描画装置
KR102919104B1 (ko) 2020-02-03 2026-01-29 아이엠에스 나노패브릭케이션 게엠베하 멀티―빔 라이터의 블러 변화 보정
KR102922552B1 (ko) 2020-04-24 2026-02-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
EP4095882A1 (en) 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3145491B2 (ja) * 1992-01-31 2001-03-12 富士通株式会社 電子ビーム装置
JPH0574404A (ja) * 1991-09-10 1993-03-26 Hitachi Ltd 荷電粒子線露光装置
JPH10106931A (ja) * 1996-10-03 1998-04-24 Hitachi Ltd 電子ビーム露光方法およびそれを用いた半導体集積回路装置の製造方法
JP2000252198A (ja) * 1999-03-02 2000-09-14 Advantest Corp 荷電ビーム露光装置
JP3326419B2 (ja) * 2000-01-28 2002-09-24 株式会社日立製作所 電子ビーム描画方法
JP4647820B2 (ja) * 2001-04-23 2011-03-09 キヤノン株式会社 荷電粒子線描画装置、および、デバイスの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8772734B2 (en) 2011-12-27 2014-07-08 Canon Kabushiki Kaisha Charged particle beam lithography apparatus and method, and article manufacturing method

Also Published As

Publication number Publication date
JP2006019436A (ja) 2006-01-19

Similar Documents

Publication Publication Date Title
JP4634076B2 (ja) 荷電粒子線露光装置及びデバイス製造方法
US6903353B2 (en) Charged particle beam exposure apparatus, device manufacturing method, and charged particle beam applied apparatus
JP6491842B2 (ja) 補正プレートを有する荷電粒子多重ビーム装置
JP4738723B2 (ja) マルチ荷電粒子線描画装置、荷電粒子線の電流の測定方法及びデバイス製造方法
JP7231496B2 (ja) マルチ電子ビーム照射装置、マルチ電子ビーム照射方法、及びマルチ電子ビーム検査装置
JP7316106B2 (ja) 収差補正器及びマルチ電子ビーム照射装置
JP4761508B2 (ja) 荷電粒子露光装置およびデバイス製造方法
JP7429128B2 (ja) マルチ電子ビーム照射装置及びマルチ電子ビーム照射方法
JP2020053380A (ja) マルチ電子ビーム画像取得装置及びマルチ電子ビーム画像取得方法
US20050006603A1 (en) Charged particle beam exposure method, charged particle beam exposure apparatus, and device manufacturing method
US20050006601A1 (en) Charged particle beam exposure apparatus, charged particle beam exposure method, and device manufacturing method using the same apparatus
JP4477436B2 (ja) 荷電粒子線露光装置
JP4468752B2 (ja) 荷電粒子線露光方法、荷電粒子線露光装置及びデバイス製造方法
JP4745739B2 (ja) 静電レンズ装置、露光装置、及びデバイス製造方法
JP7525387B2 (ja) 収差補正器
JP4458372B2 (ja) マルチビーム荷電粒子線装置及びマルチビーム荷電粒子線の制御方法およびデバイス製造方法
JP4804136B2 (ja) 荷電粒子線装置及びデバイス製造方法
US20020123168A1 (en) Apparatus and methods for blocking highly scattered charged particles in a patterned beam in a charged-particle-beam microlithography system
JP2018010895A (ja) ブランキングアパーチャアレイ、ブランキングアパーチャアレイの製造方法、及びマルチ荷電粒子ビーム描画装置
US20020036272A1 (en) Charged-particle-beam microlithography methods and apparatus providing reduced reticle heating
JP2006278029A (ja) 電子線装置及び該装置を用いたデバイス製造方法
JP4804592B2 (ja) 荷電粒子線装置及びデバイス製造方法
JP4402529B2 (ja) 荷電粒子線露光方法、荷電粒子線露光装置及びデバイス製造方法
JP4494734B2 (ja) 荷電粒子線描画方法、荷電粒子線露光装置及びデバイス製造方法
JP2007019245A (ja) 荷電粒子線露光装置およびデバイス製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070702

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070702

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20090413

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20090709

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100405

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100823

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101015

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101101

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101118

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131126

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees