JP4780268B2 - 電力半導体モジュール、および電力半導体モジュールの製造方法 - Google Patents

電力半導体モジュール、および電力半導体モジュールの製造方法 Download PDF

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Publication number: JP4780268B2
Authority: JP; Japan
Prior art keywords: carrier element; carrier; module; module housing; semiconductor
Prior art date: 2001-05-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP2003500964A

Other languages

English (en)

Japanese (ja)

Other versions

JP2004532529A (ja

Inventor

チルプス，ローマン

ヴァルマイヤー，ペーター

ロッデンケッター，マンフレート

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Infineon Technologies AG

Original Assignee

Infineon Technologies AG

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-05-25

Filing date

2002-05-18

Publication date

2011-09-28

2002-05-18 Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG

2004-10-21 Publication of JP2004532529A publication Critical patent/JP2004532529A/ja

2011-09-28 Application granted granted Critical

2011-09-28 Publication of JP4780268B2 publication Critical patent/JP4780268B2/ja

2022-05-18 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

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Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

JP2003500964A 2001-05-25 2002-05-18 電力半導体モジュール、および電力半導体モジュールの製造方法 Expired - Fee Related JP4780268B2 (ja)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
DE10125697.3		2001-05-25
DE10125697.3A DE10125697B4 (de)	2001-05-25	2001-05-25	Leistungshalbleitermodul und Verfahren zum Herstellen eines Leistungshalbleitermoduls
PCT/EP2002/005520 WO2002097880A2 (fr)	2001-05-25	2002-05-18	Module a semi-conducteur de puissance et procede pour produire un module a semi-conducteur de puissance

Publications (2)

Publication Number	Publication Date
JP2004532529A JP2004532529A (ja)	2004-10-21
JP4780268B2 true JP4780268B2 (ja)	2011-09-28

Family

ID=7686238

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2003500964A Expired - Fee Related JP4780268B2 (ja)	2001-05-25	2002-05-18	電力半導体モジュール、および電力半導体モジュールの製造方法

Country Status (3)

Country	Link
JP (1)	JP4780268B2 (fr)
DE (1)	DE10125697B4 (fr)
WO (1)	WO2002097880A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2003071601A2 (fr) *	2002-02-18	2003-08-28	Infineon Technologies Ag	Module de circuit et procede de fabrication
DE102005061772B4 (de) *	2005-12-23	2017-09-07	Danfoss Silicon Power Gmbh	Leistungshalbleitermodul
JP5565147B2 (ja)	2010-06-30	2014-08-06	株式会社デンソー	半導体モジュールの製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5710951A (en) *	1980-06-25	1982-01-20	Rohm Co Ltd	Semiconductor device
JP2582013B2 (ja) *	1991-02-08	1997-02-19	株式会社東芝	樹脂封止型半導体装置及びその製造方法
DE3508456C2 (de) *	1985-03-09	1987-01-08	Brown, Boveri & Cie Ag, 6800 Mannheim	Leistungshalbleitermodul und Verfahren zur Herstellung eines solchen Moduls
KR910001419B1 (ko) *	1987-03-31	1991-03-05	가부시키가이샤 도시바	수지봉합형 집적회로장치
IT1221585B (it) *	1987-05-18	1990-07-12	S G S Microelettronica Spa Ora	Circuito modulare a piu' piastrine a semiconduttore in capsulato in resina,e relativo procedimento di fabbrivazione
JPH02201949A (ja)	1989-01-30	1990-08-10	Toshiba Corp	半導体装置
US5075759A (en)	1989-07-21	1991-12-24	Motorola, Inc.	Surface mounting semiconductor device and method
DE3940933C2 (de)	1989-12-12	1996-08-01	Eupec Gmbh & Co Kg	Verfahren zum Verformen einer Basisplatte für Halbleitermodule und Vorrichtung zum Durchführen des Verfahrens
US5245216A (en) *	1990-09-11	1993-09-14	Kabushiki Kaisha Toshiba	Plastic-molded type semiconductor device
US5194933A (en)	1990-10-05	1993-03-16	Fuji Electric Co., Ltd.	Semiconductor device using insulation coated metal substrate
JPH06151685A (ja) *	1992-11-04	1994-05-31	Mitsubishi Electric Corp	Ｍｃｐ半導体装置
JP3206717B2 (ja)	1996-04-02	2001-09-10	富士電機株式会社	電力用半導体モジュール
US6404065B1 (en)	1998-07-31	2002-06-11	I-Xys Corporation	Electrically isolated power semiconductor package
EP1122778A3 (fr) *	2000-01-31	2004-04-07	Sanyo Electric Co., Ltd.	Dispositif de circuit et son procédé de fabrication

2001
- 2001-05-25 DE DE10125697.3A patent/DE10125697B4/de not_active Expired - Fee Related
2002
- 2002-05-18 JP JP2003500964A patent/JP4780268B2/ja not_active Expired - Fee Related
- 2002-05-18 WO PCT/EP2002/005520 patent/WO2002097880A2/fr not_active Ceased

Also Published As

Publication number	Publication date
WO2002097880A2 (fr)	2002-12-05
DE10125697B4 (de)	2019-01-03
DE10125697A1 (de)	2002-12-05
WO2002097880A3 (fr)	2003-09-25
JP2004532529A (ja)	2004-10-21

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Publication	Publication Date	Title
US4731701A (en)	1988-03-15	Integrated circuit package with thermal path layers incorporating staggered thermal vias
KR0145275B1 (ko)	1998-10-01	회로장치
TW405196B (en)	2000-09-11	Segmented architecture for wafer test & burn-in
US7615872B2 (en)	2009-11-10	Semiconductor device
US20040233649A1 (en)	2004-11-25	Electronic chip and electronic chip assembly
JP2009532912A (ja)	2009-09-10	一体型スルーホール熱放散ピンを有するモールドされた半導体パッケージ
US5233131A (en)	1993-08-03	Integrated circuit die-to-leadframe interconnect assembly system
US5596227A (en)	1997-01-21	Ball grid array type semiconductor device
RU2190284C2 (ru)	2002-09-27	Двусторонний электронный прибор
JPH05326808A (ja)	1993-12-10	電子部品搭載用基板およびこれを用いた半導体装置
JP2005509278A (ja)	2005-04-07	電力半導体モジュール
JP4780268B2 (ja)	2011-09-28	電力半導体モジュール、および電力半導体モジュールの製造方法
US5886396A (en)	1999-03-23	Leadframe assembly for conducting thermal energy from a semiconductor die disposed in a package
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US5736234A (en)	1998-04-07	Multilayer printed circuit board having latticed films on an interconnection layer
KR100237895B1 (ko)	2000-01-15	저가 수지 몰드 반도체 장치
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US20060141667A1 (en)	2006-06-29	Bare die socket
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JPH04237154A (ja)	1992-08-25	半導体パッケージ