JP4958821B2 - ネガ型レジスト組成物及びそれを用いたパターン形成方法 - Google Patents

ネガ型レジスト組成物及びそれを用いたパターン形成方法 Download PDF

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Publication number
JP4958821B2
JP4958821B2 JP2008079338A JP2008079338A JP4958821B2 JP 4958821 B2 JP4958821 B2 JP 4958821B2 JP 2008079338 A JP2008079338 A JP 2008079338A JP 2008079338 A JP2008079338 A JP 2008079338A JP 4958821 B2 JP4958821 B2 JP 4958821B2
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Japan
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group
acid
carbon atoms
alkyl group
resist composition
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JP2008079338A
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English (en)
Japanese (ja)
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JP2008268935A (ja
Inventor
浩司 白川
忠輝 八尾
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2008079338A priority Critical patent/JP4958821B2/ja
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to TW097111165A priority patent/TWI398730B/zh
Priority to US12/058,329 priority patent/US20080241745A1/en
Priority to EP08006042A priority patent/EP1978408B1/de
Priority to AT08006042T priority patent/ATE528690T1/de
Priority to KR1020080029054A priority patent/KR20080088508A/ko
Publication of JP2008268935A publication Critical patent/JP2008268935A/ja
Application granted granted Critical
Publication of JP4958821B2 publication Critical patent/JP4958821B2/ja
Priority to KR1020140025861A priority patent/KR101502617B1/ko
Priority to US14/255,113 priority patent/US9034560B2/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2008079338A 2007-03-29 2008-03-25 ネガ型レジスト組成物及びそれを用いたパターン形成方法 Active JP4958821B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2008079338A JP4958821B2 (ja) 2007-03-29 2008-03-25 ネガ型レジスト組成物及びそれを用いたパターン形成方法
US12/058,329 US20080241745A1 (en) 2007-03-29 2008-03-28 Negative resist composition and pattern forming method using the same
EP08006042A EP1978408B1 (de) 2007-03-29 2008-03-28 Negative Resistzusammensetzung und Verfahren zur Strukturformung damit
AT08006042T ATE528690T1 (de) 2007-03-29 2008-03-28 Negative resistzusammensetzung und verfahren zur strukturformung damit
TW097111165A TWI398730B (zh) 2007-03-29 2008-03-28 負光阻組成物及其用以形成圖案之方法
KR1020080029054A KR20080088508A (ko) 2007-03-29 2008-03-28 네가티브형 레지스트 조성물 및 그것을 사용한패턴형성방법
KR1020140025861A KR101502617B1 (ko) 2007-03-29 2014-03-05 네가티브형 레지스트 조성물을 포함하는 적층체 및 그것을 사용한 패턴형성방법
US14/255,113 US9034560B2 (en) 2007-03-29 2014-04-17 Negative resist composition and pattern forming method using the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007088557 2007-03-29
JP2007088557 2007-03-29
JP2008079338A JP4958821B2 (ja) 2007-03-29 2008-03-25 ネガ型レジスト組成物及びそれを用いたパターン形成方法

Publications (2)

Publication Number Publication Date
JP2008268935A JP2008268935A (ja) 2008-11-06
JP4958821B2 true JP4958821B2 (ja) 2012-06-20

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JP2008079338A Active JP4958821B2 (ja) 2007-03-29 2008-03-25 ネガ型レジスト組成物及びそれを用いたパターン形成方法

Country Status (4)

Country Link
JP (1) JP4958821B2 (de)
KR (2) KR20080088508A (de)
AT (1) ATE528690T1 (de)
TW (1) TWI398730B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5656413B2 (ja) 2009-01-30 2015-01-21 富士フイルム株式会社 ネガ型レジストパターン形成方法、それに用いられる現像液及びネガ型化学増幅型レジスト組成物、並びにレジストパターン
JP5557550B2 (ja) 2009-02-20 2014-07-23 富士フイルム株式会社 電子線又はｅｕｖ光を用いた有機溶剤系現像又は多重現像パターン形成方法
JP5352320B2 (ja) * 2009-03-31 2013-11-27 富士フイルム株式会社 ネガ型パターン形成方法およびそれに用いられる現像後処理液
JP5630181B2 (ja) * 2010-03-05 2014-11-26 大日本印刷株式会社 ネガ型レジスト組成物、当該レジスト組成物を用いたレリーフパターンの製造方法及びフォトマスクの製造方法
JPWO2012014576A1 (ja) * 2010-07-30 2013-09-12 Jsr株式会社 ネガ型感放射線性樹脂組成物
JP5514759B2 (ja) 2011-03-25 2014-06-04 富士フイルム株式会社 レジストパターン形成方法、レジストパターン、有機溶剤現像用の架橋性ネガ型化学増幅型レジスト組成物、レジスト膜、及びレジスト塗布マスクブランクス
JP5358630B2 (ja) * 2011-08-17 2013-12-04 富士フイルム株式会社 レジストパターン形成方法、ナノインプリント用モールドの製造方法、及びフォトマスクの製造方法
JP6209307B2 (ja) 2011-09-30 2017-10-04 富士フイルム株式会社 パターン形成方法、及びこれを用いた電子デバイスの製造方法
JP5732364B2 (ja) 2011-09-30 2015-06-10 富士フイルム株式会社 パターン形成方法、及び、電子デバイスの製造方法
JP5879209B2 (ja) * 2012-06-21 2016-03-08 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP5873826B2 (ja) 2012-07-27 2016-03-01 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
JP6095231B2 (ja) 2013-03-29 2017-03-15 富士フイルム株式会社 パターン形成方法、及びこれを用いた電子デバイスの製造方法
JP6185874B2 (ja) 2013-05-02 2017-08-23 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法、及び、電子デバイス
JP6200721B2 (ja) 2013-08-01 2017-09-20 富士フイルム株式会社 パターン形成方法、及びこれを用いた電子デバイスの製造方法
JP6247858B2 (ja) 2013-08-01 2017-12-13 富士フイルム株式会社 パターン形成方法、及びこれを用いた電子デバイスの製造方法
JP6122754B2 (ja) 2013-09-30 2017-04-26 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び電子デバイスの製造方法
JP6313604B2 (ja) 2014-02-05 2018-04-18 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び電子デバイスの製造方法
JP6220695B2 (ja) 2014-02-18 2017-10-25 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法及び電子デバイスの製造方法
KR101877029B1 (ko) 2016-05-13 2018-07-11 영창케미칼 주식회사 화학증폭형 네가티브형 포토레지스트 조성물
JP7166151B2 (ja) * 2018-11-22 2022-11-07 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
CN115850950B (zh) * 2022-12-21 2024-06-11 安徽远征传导科技股份有限公司 一种新能源汽车用移动抗曲挠交流充电枪电缆

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JP3638743B2 (ja) * 1996-12-26 2005-04-13 東京応化工業株式会社 化学増幅型ネガ型レジスト組成物
JPH11149159A (ja) * 1997-11-17 1999-06-02 Hitachi Ltd パタン形成方法及び半導体素子の製造方法
JP3707655B2 (ja) * 1998-10-24 2005-10-19 東京応化工業株式会社 ネガ型レジスト組成物
JP2000206679A (ja) * 1999-01-08 2000-07-28 Hitachi Ltd パタン形成方法および半導体素子の製造方法
JP4132642B2 (ja) * 1999-11-15 2008-08-13 東京応化工業株式会社 ネガ型レジスト基材及びそれを用いたイオン注入基板の製造方法
JP4092083B2 (ja) * 2001-03-21 2008-05-28 富士フイルム株式会社 電子線又はｘ線用ネガ型レジスト組成物
JP2002365802A (ja) * 2001-06-08 2002-12-18 Fuji Photo Film Co Ltd ネガ型レジスト組成物
JP2002372783A (ja) * 2001-06-15 2002-12-26 Fuji Photo Film Co Ltd ネガ型レジスト組成物
TWI242689B (en) * 2001-07-30 2005-11-01 Tokyo Ohka Kogyo Co Ltd Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same
AU2002354114A1 (en) * 2001-11-30 2003-06-10 Matsushita Electric Industrial Co., Ltd. Bisimide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition
JP3856306B2 (ja) * 2002-03-29 2006-12-13 富士フイルムホールディングス株式会社 ネガ型レジスト組成物
EP1566700B1 (de) * 2004-02-23 2016-08-03 FUJIFILM Corporation Automatisches Entwicklungsverfahren von fotoempfindlichen lithographischen Druckplatten und automatische Entwicklungsvorrichtung
JP4407815B2 (ja) * 2004-09-10 2010-02-03 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4789599B2 (ja) * 2004-12-06 2011-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトレジスト組成物
JP4505357B2 (ja) * 2005-03-16 2010-07-21 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法

Also Published As

Publication number Publication date
KR20140041649A (ko) 2014-04-04
KR101502617B1 (ko) 2015-03-12
TWI398730B (zh) 2013-06-11
TW200905394A (en) 2009-02-01
KR20080088508A (ko) 2008-10-02
JP2008268935A (ja) 2008-11-06
ATE528690T1 (de) 2011-10-15

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