JP5002009B2 - 光学装置 - Google Patents
光学装置 Download PDFInfo
- Publication number
- JP5002009B2 JP5002009B2 JP2009515735A JP2009515735A JP5002009B2 JP 5002009 B2 JP5002009 B2 JP 5002009B2 JP 2009515735 A JP2009515735 A JP 2009515735A JP 2009515735 A JP2009515735 A JP 2009515735A JP 5002009 B2 JP5002009 B2 JP 5002009B2
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- Prior art keywords
- mirror
- conical
- radiation
- radiation beam
- conical mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 230000003287 optical effect Effects 0.000 title claims description 38
- 230000005855 radiation Effects 0.000 claims description 120
- 239000000758 substrate Substances 0.000 claims description 42
- 238000000059 patterning Methods 0.000 claims description 29
- 238000005286 illumination Methods 0.000 claims description 19
- 238000013519 translation Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000007654 immersion Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/18—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical projection, e.g. combination of mirror and condenser and objective
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/002—Arrays of reflective systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0605—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using two curved mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
Claims (7)
- 光学装置であって、
反射性外面がある円錐形第一ミラーと、
反射性内面及び開口がある円錐形第二ミラーとを備え、
使用時に、放射エミッタからの放射が前記開口を通過し、前記第二円錐形ミラーに入射する前に前記第一円錐形ミラーに入射し、
前記光学装置が前記放射から放射ビームを形成し、
前記放射ビームの発散を調節するために、前記第一円錐形ミラーが前記第二円錐形ミラーに向かって及び前記第二円錐形ミラーから離れるように平行移動可能であるか、前記第二円錐形ミラーが前記第一円錐形ミラーに向かって及び前記第一円錐形ミラーから平行移動可能であり、
前記第一円錐形ミラーは、第1及び第2の要素を有し、前記放射ビームの発散を調節するために、前記第1の要素が前記第2の要素に向かって及び前記第2の要素から離れるようにさらに平行移動可能である、光学装置。 - 前記第二円錐形ミラーと前記第一円錐形ミラーが両方とも相互に向かって、及び相互から離れるように平行移動可能である、請求項1に記載の装置。
- 前記平行移動可能なミラーを平行移動させる1つ又は複数のミラーをさらに備える、請求項1に記載の装置。
- 反射性外面がある円錐形第一ミラーと、反射性内面及び開口がある円錐形第二ミラーとを備える光学装置であって、使用時に、放射が前記開口を通過し、前記第二円錐形ミラーに入射する前に前記第一円錐形ミラーに入射し、該光学装置が前記放射から放射ビームを形成し、前記放射ビームの発散を調節するために、前記第一円錐形ミラーが前記第二円錐形ミラーに向かって及び前記第二円錐形ミラーから離れるように平行移動可能であるか、前記第二円錐形ミラーが前記第一円錐形ミラーに向かって及び前記第一円錐形ミラーから離れるように平行移動可能である、光学装置と、
前記光学装置によって形成された前記放射ビームを調整する照明システムと、
前記放射ビームの断面にパターンを与えて、パターン付き放射ビームを形成することができるパターニングデバイスを支持する支持体と、
前記パターン付き放射ビームを基板のターゲット部分に投影する投影システムと、
を備え、
前記第一円錐形ミラーは、第1及び第2の要素を有し、前記放射ビームの発散を調節するために、前記第1の要素が前記第2の要素に向かって及び前記第2の要素から離れるようにさらに平行移動可能である、リソグラフィ装置。 - 前記照明システムが、前記放射ビームを調整する複数のミラーを備え、前記ミラーの少なくとも1つに、前記ミラーの反射性部分のサイズを調節できるブレードが設けられる、請求項4に記載の装置。
- 前記照明システムが、前記放射ビームを調整する複数のミラーを備え、前記ミラーの少なくとも1つがその光軸に沿って平行移動可能である、請求項4に記載の装置。
- 前記照明システムの前記他のミラーの1つが、前記平行移動可能なミラーとともに望遠鏡を形成する、請求項6に記載の装置。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/471,728 US7817246B2 (en) | 2006-06-21 | 2006-06-21 | Optical apparatus |
| US11/471,728 | 2006-06-21 | ||
| PCT/EP2007/005144 WO2007147498A1 (en) | 2006-06-21 | 2007-06-11 | Optical apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009541977A JP2009541977A (ja) | 2009-11-26 |
| JP5002009B2 true JP5002009B2 (ja) | 2012-08-15 |
Family
ID=38561754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009515735A Expired - Fee Related JP5002009B2 (ja) | 2006-06-21 | 2007-06-11 | 光学装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7817246B2 (ja) |
| JP (1) | JP5002009B2 (ja) |
| KR (1) | KR20090018149A (ja) |
| TW (1) | TWI374340B (ja) |
| WO (1) | WO2007147498A1 (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9523921B2 (en) | 2009-08-14 | 2016-12-20 | Asml Netherlands B.V. | EUV radiation system and lithographic apparatus |
| US10061201B2 (en) * | 2016-10-24 | 2018-08-28 | Hrl Laboratories, Llc | Bottom up apparatus design for formation of self-propagating photopolymer waveguides |
| US11934105B2 (en) * | 2017-04-19 | 2024-03-19 | Nikon Corporation | Optical objective for operation in EUV spectral region |
| CN116045828B (zh) * | 2023-03-29 | 2023-10-20 | 睿励科学仪器(上海)有限公司 | 一种光谱椭偏测量系统和一种光谱椭偏测量方法 |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE754893A (fr) * | 1969-08-16 | 1971-02-15 | Philips Nv | Systeme de representation optique comportant un systeme de miroirs constitue par un miroir spherique convexe et un miroir spherique comportantune ouverture |
| JPS6053848B2 (ja) * | 1980-10-17 | 1985-11-27 | 松下電器産業株式会社 | ビ−ム集光装置 |
| US4812030A (en) * | 1985-01-03 | 1989-03-14 | The Boeing Company | Catoptric zoom optical device |
| EP0237041B1 (en) * | 1986-03-12 | 1993-08-18 | Matsushita Electric Industrial Co., Ltd. | Projection optical system for use in precise copy |
| US4988858A (en) * | 1986-11-12 | 1991-01-29 | The Boeing Company | Catoptric multispectral band imaging and detecting device |
| US4863253A (en) * | 1987-09-25 | 1989-09-05 | Spectra-Tech, Inc. | High magnification reflecting microscope objective having a dual magnification mode and zoom magnification capability |
| US4886348A (en) * | 1988-10-26 | 1989-12-12 | Westinghouse Electric Corp. | Total transmissibility optical system |
| US5136413A (en) * | 1990-11-05 | 1992-08-04 | Litel Instruments | Imaging and illumination system with aspherization and aberration correction by phase steps |
| US5212588A (en) * | 1991-04-09 | 1993-05-18 | The United States Of America As Represented By The United States Department Of Energy | Reflective optical imaging system for extreme ultraviolet wavelengths |
| JPH0547637A (ja) * | 1991-08-19 | 1993-02-26 | Toshiba Corp | 光源装置 |
| JP3077920B2 (ja) * | 1991-09-30 | 2000-08-21 | 日本電信電話株式会社 | 光学系評価装置及び光学系評価方法 |
| JP3151260B2 (ja) * | 1991-12-09 | 2001-04-03 | オリンパス光学工業株式会社 | 落射型x線顕微鏡 |
| JPH05297278A (ja) * | 1992-04-23 | 1993-11-12 | Shimadzu Corp | レーザー光照射用光学装置 |
| JP2866267B2 (ja) * | 1992-12-11 | 1999-03-08 | 三菱電機株式会社 | 光描画装置およびウェハ基板の光描画方法 |
| US5510230A (en) * | 1994-10-20 | 1996-04-23 | At&T Corp. | Device fabrication using DUV/EUV pattern delineation |
| US6007963A (en) * | 1995-09-21 | 1999-12-28 | Sandia Corporation | Method for extreme ultraviolet lithography |
| US5737137A (en) * | 1996-04-01 | 1998-04-07 | The Regents Of The University Of California | Critical illumination condenser for x-ray lithography |
| JPH10213747A (ja) * | 1997-01-30 | 1998-08-11 | Mitsubishi Electric Corp | 逆望遠型反射光学系 |
| JP4238390B2 (ja) * | 1998-02-27 | 2009-03-18 | 株式会社ニコン | 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法 |
| EP0955641B1 (de) * | 1998-05-05 | 2004-04-28 | Carl Zeiss | Beleuchtungssystem insbesondere für die EUV-Lithographie |
| US6225027B1 (en) * | 1998-08-06 | 2001-05-01 | Euv Llc | Extreme-UV lithography system |
| US6331710B1 (en) * | 1998-12-02 | 2001-12-18 | Zhijiang Wang | Reflective optical systems for EUV lithography |
| JP2001066399A (ja) * | 1999-08-27 | 2001-03-16 | Nikon Corp | 多層膜反射鏡および露光装置、又は分析装置。 |
| US6560039B1 (en) * | 1999-09-28 | 2003-05-06 | Tropel Corporation | Double mirror catadioptric objective lens system with three optical surface multifunction component |
| JP2001332489A (ja) * | 2000-03-13 | 2001-11-30 | Nikon Corp | 照明光学系、投影露光装置、及びデバイス製造方法 |
| DE10045265A1 (de) * | 2000-09-13 | 2002-03-21 | Zeiss Carl | Vorrichtung zum Bündeln der Strahlung einer Lichtquelle |
| JP2005038605A (ja) * | 2002-02-12 | 2005-02-10 | Daisei Denki Kk | 照明器具 |
| SG121762A1 (en) * | 2002-03-18 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus, and device manufacturing method |
| JP4105616B2 (ja) * | 2002-08-15 | 2008-06-25 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフ投影装置およびこの装置用の反射鏡アセンブリ |
| JP2004101404A (ja) * | 2002-09-11 | 2004-04-02 | Shimadzu Corp | X線分析装置 |
| JP2004343082A (ja) * | 2003-04-17 | 2004-12-02 | Asml Netherlands Bv | 凹面および凸面を含む集光器を備えたリトグラフ投影装置 |
| JP4327799B2 (ja) * | 2003-08-27 | 2009-09-09 | カール・ツァイス・エスエムティー・アーゲー | 光源、とくにeuvプラズマ放電源のための傾斜ミラーの垂直入射コレクタシステム |
| JP2005340319A (ja) * | 2004-05-25 | 2005-12-08 | Nikon Corp | 光源装置、照明装置、露光装置、露光方法および調整方法 |
| US7098466B2 (en) * | 2004-06-30 | 2006-08-29 | Intel Corporation | Adjustable illumination source |
| US8134687B2 (en) | 2004-08-23 | 2012-03-13 | Carl Zeiss Smt Gmbh | Illumination system of a microlithographic exposure apparatus |
| US20060138349A1 (en) * | 2004-12-27 | 2006-06-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7331676B2 (en) | 2005-02-09 | 2008-02-19 | Coherent, Inc. | Apparatus for projecting a reduced image of a photomask using a schwarzschild objective |
| JP2007047704A (ja) * | 2005-08-12 | 2007-02-22 | Y E Data Inc | 露光装置用光源 |
-
2006
- 2006-06-21 US US11/471,728 patent/US7817246B2/en not_active Expired - Fee Related
-
2007
- 2007-06-11 WO PCT/EP2007/005144 patent/WO2007147498A1/en not_active Ceased
- 2007-06-11 JP JP2009515735A patent/JP5002009B2/ja not_active Expired - Fee Related
- 2007-06-11 KR KR1020087031005A patent/KR20090018149A/ko not_active Ceased
- 2007-06-15 TW TW096121661A patent/TWI374340B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007147498A1 (en) | 2007-12-27 |
| JP2009541977A (ja) | 2009-11-26 |
| TW200807181A (en) | 2008-02-01 |
| US20070296943A1 (en) | 2007-12-27 |
| TWI374340B (en) | 2012-10-11 |
| US7817246B2 (en) | 2010-10-19 |
| KR20090018149A (ko) | 2009-02-19 |
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